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Interactive Tutorial On Fundamentals of Signal Integrity For High-Speed/High-Density Design
Interactive Tutorial On Fundamentals of Signal Integrity For High-Speed/High-Density Design
Alina Deutsch
IBM Corporation, T.J. Watson Research Center
deutsch@us.ibm.com
DAC 2001
SEMCHIP
Outline
Introduction (A. Deutsch)
The interconnect bottleneck in high-speed systems
DAC 2001
SEMCHIP
Outline (cont.)
Interconnects at the Package and Board Level
(J.Schutt-Aine/U. Ravaioli)
Concluding Remarks
DAC 2001
SEMCHIP
Fundamentals of
Transmission Line Theory
DAC 2001
SEMCHIP
Stipline
Microstrip
Familiar
Cross sections
I(z,t)
Generic symbol for
a two-conductor line
V(z,t)
DAC 2001
E( x, y, z, t ) dl = V ( z, t )
AB
Magnetic field lines
center
conductor
DAC 2001
SEMCHIP
Active wire
(+++++)
Return path (- - - - -)
Return path
Electric field
between wires
SEMCHIP
DAC 2001
= Ri ( z , t ) L
= Gv ( z , t ) C
Frequency-Domain Form
i ( z , t )
dV ( z , )
dz
v ( z , t )
dI ( z , )
dz
= GV ( z , ) j CV ( z , )
I(z,t) R(z)
I(z,t)
V(z,t)
V(z,t)
z
DAC 2001
= RI ( z , ) j LI ( z , )
L(z)
C(z)
I(z+z,t)
G(z)
V(z+z,t)
z
8
Transmission-Line Parameters
Per-unit-length capacitance C
Per-unit-length conductance G
Per-unit-length inductance L
Loop inductance
Frequency dependence due to
Current Loop
skin effect
Per-unit-length resistance R
SEMCHIP
DAC 2001
=0
i ( z , t )
v ( z , t )
z 2 v 2p t 2
= C
z
t
where v p = 1
is the wave velocity on the line.
LC
General solution: v ( z , t ) = f + ( z v p t ) + f ( z + v p t )
forward wave
Current wave: i ( z , t ) =
1 +
1
f ( z v pt )
f ( z + v pt )
Z0
Z0
forward wave
where Z 0 =
DAC 2001
backward wave
backward wave
L
is the characteristic impedance of the line.
C
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10
vp =
V+(z0,t)
Vs
z
V+(z0,t)
LC
V + ( z, t )
L
=
Z
0
I + ( z, t )
C
Vs(t) = f (t)
t
Characteristic
Impedance
I+(z0,t)
t
Time of
flight
t0 = z0/vp
t
11
DAC 2001
Vs
V+(0,t)
VS (t ) = V + (0, t ) + I + (0, t ) RS
Z0
+
=
(0,
)
(
)
V
t
V
t
S
Z 0 + RS
V + (0, t ) = Z 0 I + (0, t )
DAC 2001
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12
V1 = V + + V = V2 = V ++
Z02
(V ++, I ++)
1
V ++
+
I1 =
V V = I2 =
Z 01
Z 02
V = V +
V ++ = TV +
V and ++ V ++
I =
I =
Z01
Z02
Z02 Z01
Z02 + Z01
2Z02
Transmission Coefficient: T =
Z02 + Z01
(V +, I +)
(V , I )
Reflection Coefficient:
DAC 2001
13
Vs
ZS(f)
Z0
ZL(f)
Z S ( f ) Z0
Z S ( f ) + Z0
L ( f ) =
ZL ( f ) Z0
Z L ( f ) + Z0
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14
Load (L = 1)
V + = V0
T=d / v
(One-way
Delay)
LV+
L =
Z0
Z Z0
<< V0 , S = S
1
Z S + Z0
ZS + Z0
Z L Z0
= 1, TL = 2
Z L + Z0
2T
SLV+
VL(t )
3T
L SL
Slow response
V+
4T
~6V+
~4V+
2V+
Bounce diagram
Steady-state value V0
3T
5T
t
15
DAC 2001
Load (L = 1)
V + = V0
V+
LV+
T=d / v
(One-way
Delay)
L =
7
Z0
Z Z
V0 , S = S 0 = 0.75
ZS + Z0 8
ZS + Z0
ZL Z0
= 1, TL = 2
ZL + Z0
VL(t )
2T
2V+
SLV+ = - 0.75 V+
1.625V+
3T
L SLV+ LV+ = -0.75 V+
SteadyState: V0
0.5V+
4T
Bounce diagram
DAC 2001
t
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3T
5T
16
(V+, I+)
IL =
(V-, I-) C
L
1
V + V )
(
Z0
I L = CL
Interconnect delay = T
dVL
, VL (t = T ) = 0.
dt
VL (t ) = V + (1 exp( (t T ) / ) ) , t > T
where =Z 0 C .
Let Td be the time at which VL (t = Td ) = 0.9V + .
Td = T + 2.3
Extra delay due to the capacitor is 2.3Z 0 C
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DAC 2001
17
Wire bonds
(primarily inductive)
Z0
Interconnect bends
(primarily capacitive)
Z0
Z0
Via
(primarily inductive)
Z0
DAC 2001
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18
Capacitive Discontinuity
(V+, I+)
Z0
(V++, I++)
(V+, I+)
Z0
Z0
(V++, I++)
Z0
(V-, I-)
(V-, I-)
V ++ (t ) = V + (1 exp( t / C ) )
V ++ (t ) = V + (1 exp( t / L ) )
CZ 0
2
++
V (t ) reaches 0.9V + at t = 2.3 C
where L =
Td = 1.15CZ 0 .
Td = 1.15 L / Z 0
where C =
L
2Z0
19
DAC 2001
SEMCHIP
Ground plane
Interference occurs on
either side of the plane
20
I1
+
-
Transmission-Line
Model
Conduction (return)
current
I2
ID
+
-
- ID
I1 I 2
2
I +I
Common-mode current: I C = 1 2
2
I1 = I C + I D
Differential-mode current: I D =
I 2 = IC I D
SEMCHIP
21
'(
)(
!"#$%&
SEMCHIP
22
The disruption of the return path caused by the slot manifests itself
as an added inductance at lower frequencies and radiated emissions
(radiation resistance) at higher frequencies
*
*
'(
)(
*
+,)
+,",)
!"#$%&
DAC 2001
23
Return current
DAC 2001
L
increases
C
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24
Grid Plane
(cross section)
Advantages
-Better impedance control
-Reduced cross-plane interference
DAC 2001
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25
Semiconductor substrates
Frequency-dependent R and L
Frequency-dependent G and C
DAC 2001
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26
= [ R ( ) + j L ( )] I ( z , )
d 2V ( z , )
dz
Z ( )Y ( )V ( z , ) = 0
2
dI ( z , )
dz
= [G ( ) + j C ( )]V ( z , )
dz
where Z ( ) = R ( ) + j L ( ) is the per-unit-length impedance of the line
General solution :
1
+
I ( z , ) = Z ( ) V ( ) exp( z ) V ( ) exp( z )
0
R ( ) + j L ( )
is the characteristic impedance.
G ( ) + j C ( )
SEMCHIP
DAC 2001
27
R ( ) + jL ( )
=
j C
L ( )
R ( )
1 j
L ( )
C
Z 0 ( ) =
1 R ( )
L
1 j
2 L ( )
C
SEMCHIP
28
( )= [ R ( ) + j L ( )][G ( ) + j C ] = ( ) + j ( ).
( ) is the attenuation constant; ( ) is the phase constant.
V + ( , z ) = V0+ exp( ( ) z ) exp( j ( ) z )
attenuation
phase shift
The characteristic impedance and the phase velocity are frequency dependent:
Z 0 ( ) =
R ( ) + j L( )
, v p ( ) =
G ( ) + j C
( )
Output
Pulse
Lossy line
29
DAC 2001
V (d )
Z + Z 0 tanh d
= Z0 L
I (d )
Z 0 + Z L tanh d
Z L + jZ 0 tan d
Z 0 + jZ L tan d
I(d)
Z L Z0
Z L + Z0
Z Z0
1 L
Z L + Z0
ZL
Z0,
V(d)
d
1
Z L Z0
Z L + Z0
1+
Z L Z0
Z L + Z0
; min( Z in ) = Z 0
Matched Load: Z L = Z 0 Z in ( d ) = Z 0
Shorted Line: Z L = 0 Z in ( d ) = jZ 0 tan d
- A shorted line of length equal to an odd multiple of / 4 has infinite input
impedance and th us appears as an open circuit.
DAC 2001
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30
Zg
Z0
DAC 2001
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31
Skin-Effect Resistance
Skin effect
Skin depth: =
DAC 2001
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32
Frequency dependence
of the p.u.l. resistance
(top) and inductance
(bottom) of the single
stripline configuration
with w=50 m, t=10 m,
g=10 m, and h=100 m.
R per-unit-length (Ohms/cm)
1
0
-2
10
-1
10
10
10
L per-unit-length (Ohms/cm)
Frequency (GHz)
3.4
3.2
3
2.8
-2
10
-1
10
10
10
Frequency (GHz)
DAC 2001
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33
DAC 2001
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34
4.5
g
w
1
t
h
s
2
4
3.5
3
2.5
2
1.5
R12
R11
1
0.5
0
-4
10
10
-3
-2
-1
10
10
Frequency (GHz)
10
10
3.5
w= 50 m, t=10 m, s= 30 m
h= 110 m, g= 10 m, r=4
Aluminum: =3.3E7 S/m
Copper: =5.8E7 S/m
L11
2.5
1.5
L12
1
0.5
-4
10
DAC 2001
10
-3
-2
-1
10
10
Frequency (GHz)
10
3510
Vs
length=20 cm
Zo
1 pF
Zo
Risetime=50 ps
1 pF
g
Far-end Voltage of Victim line
0.2
90%
0.15
Voltage (V)
Voltage (V)
0.8
0.6
0.1
0.05
0.4
~ 1 ns
0.2
0.2
0.4
0.6
Time (sec)
DAC 2001
0.8
1
x 10
-0.05
-8
SEMCHIP
0.2
0.4
0.6
Time (sec)
0.8
1
x 10
36
-8
Cross-section of a stripline
geometry.
s=50 m, w=50 m,
t=10 m, g=10 m,
h=200 m and r=4.
Copper metallization.
Constant Model (Rdc, L , C)
Frequency dependent model: PEC reference planes (R(f), L(f), C)
Frequency dependent model: Copper reference plane (R(f), L(f), C)
37
DAC 2001
38
( )
( ) = ( ) j ( ) = ( ) 1 j
= ( ) (1 j tan ( ) )
( )
( )
( ) + j ( ) = j ( ) 1 j
( )
( ) ( )
tan ( ) =
=
( ) ( )
E
J
SEMCHIP
DAC 2001
39
2a
2
2
, G=
ln(b / a )
ln(b / a)
G
G
= = tan
C
C
C=
2b
SEMCHIP
Y()
40
( ) = ( ) j ( ) = +
k =1 1 + j k
K
tan ( ) =
( )
=
( )
k k
1+
k =1
2 2
k
k
2 2
k =1 1 + k
K
41
DAC 2001
V1
V2
V3
VN
Reference
conductor
V1 R11 R12
d V2 R21 R22
=
dz
VN RN1 RN 2
I1 G11 G12
d I2 G21 G22
=
dz
IN GN1 GN2
DAC 2001
R1N I1
L11
R2N
I2 + j L21
RNN
IN
LN1
G1N V1
C11
G2N
V2 + j C21
GNN VN
CN1
L12 L1N I1
L22 L2N
I2
LN 2 LNN
IN
C12 C1N V1
C22 C2N
V2
CN2 CNN VN
42
SEMCHIP
DAC 2001
43
IG (0)
RNE
IR (0)
DAC 2001
IG (d)
l
VG (0)
VG (d ) RFE
VNE
VFE
SEMCHIP
RL
IR (d)
44
Exact solution for crosstalk in a lossless, threeconductor line with resistive terminations
L M
CG
=
Per unit length parameters: L = G
,
C
C
M LR
M
Near - end and far - end crosstalk voltages :
VNE =
S RNE
j 2 l /
LG S IGDC +
j Ml C +
D RNE + RFE
1 k 2
S RNE RFE
j 2 l / 1
j CM l C +
D RNE + RFE
1 k 2 LG
VFE =
CM
CR
S VGDC
R R
S
RFE
j MlI GDC + NE FE j CM lVGDC
D RNE + RFE
RNE + RFE
where, C = cos l , S =
Inductive &
Capacitive
Coupling
Coefficients
sin l
M
CM
, k=
=
1, and
l
LG LR
CG CR
45
DAC 2001
Exact solution for crosstalk in a lossless, threeconductor line with resistive terminations
R
R
R
R
SG = S , LG = L , SR = NE , LR = FE ;
ZCG
ZCG
ZCR
ZCR
ZCG = LG / CG , ZCR = LR / CR are the characteristic impedances of each
line in the presence of the other one;
G =
LGl
RR
LRl
R R
+ CGl S L , R =
+ CRl NE FE ,
RS + RL
RS + RL
RNE + RFE
RNE + RFE
RL
VS
, are the voltage and current of the
VS , IGDC =
RS + RL
RS + RL
46
1
RNE
RNE RFE RL
j Ml +
j CM l
( RNE + RFE )( RS + RL )
D ( RNE + RFE )( RS + RL )
VFE =
1
RNE RFE RL
RFE
j Ml +
j CM l
( RNE + RFE )( RS + RL )
D ( RNE + RFE )( RS + RL )
DAC 2001
SEMCHIP
47
j
RNE
( Ml + (RFE RL )CM l )
D ( RNE + RFE )( RS + RL )
CAP
=
VFE = VFINE D + VFE
j
RNE
( Ml + (RNE RL )CM l )
D ( RNE + RFE )( RS + RL )
Notice that:
The higher the frequency the larger the crosstalk
Inductive coupling dominates for low-impedance loads
Capacitive coupling dominates for high-impedance loads
DAC 2001
SEMCHIP
48
SEMCHIP
DAC 2001
49
C = C p.u .l .d
C
Right L - model
T- model
L
L
C/2 C/2
- model
Left L - model
DAC 2001
L = Lp.u .l .d
L/2
SEMCHIP
50
Z0
Zin
1
jC +
Z0 + j L / 2
2
L
= Z0 Z0 =
1 , where T =
C
LC
T
For <<T , Z0 Z0
A bandwidth of validity of the T-model can be obtained by finding max such that
Z Z aZ for .
0
max
0.62
0.62
=
.
LC d Lp.u.l C p.u.l .
DAC 2001
51
T- model
L/2
L/2
C
LC
L
1
Z0 =
C
2
0.62
max =
LC
1/2
Right L - model
L
C
DAC 2001
2
L LC
1
Z0 =
C 2
0.62
max =
LC
C/2 C/2
Left L - model
2
LC
L
1
Z0 = j L / 2 +
C
2
0.1
max =
LC
LC
L
1
Z0 = jL /2 +
C
2
0.1
max =
LC
SEMCHIP
L
C
52
2 f max LC
0.62
0.62 n
d
or n 10
=
n
0.62
min
Lseg C seg
LC
SEMCHIP
53
DAC 2001
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54
DAC 2001
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55