Lecture 1 CMOS Technology Long Channel MOS Model Nan Sun University of Texas at Austin nansun@mail.utexas.edu —_— Slides based on B. Murmann EE 214 and D. Akinwande EE 382MOverview ¢ Reading — 2.8 (MOS fabrication), 2.9 (Active MOS devices) — 2.10.1 (Resistors), 2.10.2 (Capacitors) — 1.1, 1.5.0, 1.5.1, 1.5.2, 1.5.3 (Large signal MOS model) ¢ Introduction — In this first lecture, we will cover some of the background that positions this course as an introductory course on circuit design using CMOS technology. In the lectures to come, we will focus on the problem of amplifier design as a vehicle to establish a set of considerations that apply to more complex circuits and also other technologies. At first, we will review the "long channel model" of a MOS transistor. Driven by circuit examples, we will later augment this simple model to include additional effects that are relevant in practice. Slides based on 8. Murmann EE 214 and D. Akinwande EE 382MAnalog Circuit Sequence Design of mixed-signal and RF building blocks Analysis and design of high-performance Fundamentals for circuits in advanced undergraduates technologies Sonat Ic EE438 Fundamentals of EE338L/382M EE382V Data Electronic Circ: Analog IC Design | ConvexSTe= EE382M Mixed Signal System zThe Evolution of a Circuit Designer... y v AT ike, -s2h-. i> E41 EE438 EE338L EE382M EE382V = — — 4The Big Picture Transducer | \} Frequency | lL | User Antenna Amplifier Translation, Sensor ye Filtering interace £E338L/382M 7 EE382V EE382V * Most modern electronic information processing systems rely on amplification of "small" physical signals — E.g. signal from RF antenna, disk drive head, microphone, ... ¢ This course uses amplifiers as a vehicle to teach you the basics of analog integrated circuit analysis and design — Material forms basis for other and/or more complex circuits Slides based on B. Murmann E€ 214 and D. Akinwande EE 382M.Technological Progress Vacuum Tube Transistor Modern Discrete 1906 1947 Transistors -| in Integrated Circuit Slides based on B. Murmann EE 214 and D. Akinwande EE 382MEconomics a yes g jes @ 1000 ie a | 2 ord $ (E 2 ‘uropean € 100 Nanotechnology ie Roadmap] Slides based on B. Murmann EE 214 and D. Akinwande EE 382MFuture Applications (Flexible, Bio, loT) Slides based on B. Murmann €€ 214 and 0. Akinwande EE 382MDiscrete vs. Integrated Circuits Discrete Audio Amplifier Integrated CMOS Audio Amplifier 2 2 t4+4 t+ co a — rt + L : ie : L 2 + 2 Ly 1 | Il ; cr 7 ea Tr T; * Minimize transistor count * Giirited ruber of transistors * Devices usually don't match * Devices match well ¢ Arbitrary resistor val * Keep resistors < 10~100k . Sapactors toro * Keep capacitors < 10~50pF = ae Slides based on B. Murmann EE214 and D. Akinwande EE 382MModern Integrated Circuit Technologies SiGe BJT High High Parameter Device Speed Noise Good Good Good Good Best Transconductance Intrinsic gain Better ¢ Why use CMOS for analog integrated circuits? — Low cost, driven by high volume digital ICs — Integration with high density digital circuits * BiCMOS tends to be expensive Slides based on 8. Murmann EE 214 and D. Akinwande E€ 382MBasic MOS Operation (1) Poly gate ov ov Vp (>0V) T es ] NMOS oy eS p substrate Buk OV « With zero voltage at the gate, device is "off" - Back-to-back reverse biased pn junctions Slides based on B. Murmann EE 214 and D. Akinwande EE 382MBasic MOS Operation (2) ee eee >ot inversion layer G SiO, ey “OOOO0OG- substrate ¢ Vgs20, electrons are pulled toward the positive gate electrode © Vg5>V;, a conductive inversion layer forms 2 Slides based on 8. Murmann EE 214 and D. Akinwande EE 382MIp=? Induced type inversion layer e pesubstate Vos > 0, current will flow How can we calculate |, as a function of V,, and V,.? Basic MOS Operation (3) tek | >o = ¢ olf Depletion region . Slides based on B. Murmann E€ 214 and D. Akinwande E€ 382MFirst Order IV Characteristics (1) * What we know: Guy CoelVes -VV)—h,] Ip ~Q, VW ————— Qu » = Cy Vos VV) -V, ae EQ) W Slides based on 8, Murmann EE 214 and 0. Akinwande E€ 382MFirst Order IV Characteristics (2) 15 =C,Wos VOY, | Ey): W p-2o) Vv Ipdy =WuC, Ox Vos -V(y)-V;]-aV L Vip Tp {dy =Wuc,. (Wes on OA V,)-av 0 0 © For Vp5/2 << Vgs-V, this looks like a linear resistor: I=1/R x V Slides based on B. Murmann EE 214 and D. Akinwande EE 382MPlot of First Order I-V Curves Vos —> * Something is wrong here... — Current should not decrease with increasing Vp. ¢ What happens when V,.>Vg.-V,? — Vep = Ves-Vps becomes less than V,, i.e. no more channel or "pinch off" Slides based on 8. Murmann EE214 and D. Akinwande EE 382MPinch-Off Voltage at the end of channel Is fixed at Ves-Vin y=0 yet ¢ When Vp, > Ves-Vip, Current becomes independent of V,, ¢ Demo: http://www-g.eng.cam.ac.uk/mmg/teaching/linearcircuits/mosfet.html Slides based on B. Murmann EE214 and D. Akinwande EE 382M.Modified Plot and Equations Triode Region : Active Region Linear Region ‘Saturation Region W V, Triode Region: = /) = uC, 7 -V,)- | Vos Ww Vos —V, 1 Ww Active Region: = /p) = Cay (Ves -¥,)- Go? “(Vos —Vi) == Cox —WVes —Vi)° L a ee 2 L Slides based on B. Murmann €€ 214 and D. Akinwande EE 382MFirst-Order MOS Model Summary IR Ip =4iCac™ Wos-V,F UFAV0S) o £ ACTIVE “vcs” TRIODE Ip = Has | West) RR] Vos = Ze Ves Slides based on B. Murmann EE 214 and 0. Akinwande EE 382MModel Accuracy ¢ The above equations constitute the most basic MOS IV model — "Long channel model", "quadratic model", "low field model" ¢ This model does NOT describe modern CMOS devices accurately — Short-channel effects * But, we can use this simple model to develop basic circuit intuition ¢ Wewill develop better models later ¢ The best model is always the simplest one that works —_—_— 20 Slides based on 8. Murmann €€ 214 and D. Akinwande EE 382M