MCH IN T

CHNG 1. DIODE BN DN

Ni dung
Diode chnh lu
c tuyn v m hnh ca Diode
Mch chnh lu v lc ngun
Mt s ng dng: xn, ghim, nhn p, logic

Diode Zener
c tuyn v m hnh ca Diode Zener
Mch n p DC

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K hiu

Gi tr ti im tnh Q (quiescent-point): IEQ, VCEQ

Gi tr mt chiu: IE, VCE
Gi tr tc thi: iE, vCE

Gi tr tc thi ca thnh phn thay i theo thi gian: ie, vce

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Gii thiu
Diode l mt linh kin in t phi tuyn n gin nht.
Cc loi diode:
Diode chn khng,
Diode kh,
Diode chnh lu kim loi,
Diode bn dn, vv

Cc vt liu bn dn thng dng:

Silicon (Si)
Ph bin nht

Germanium (Ge)
Gallium Arsenide (GaAs)
Mch siu cao tn, pht quang v ng dng tn s cao

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Diode
Light Emitting Diode

Laser Diode
Photodiode
Schottky Diode
Zener Diode
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Diode bn dn
Diode bn dn thng thng:
mch chnh lu v tch sng

Zenner diode:
to in p chun

Schottkky diode:
t in bn dn thay i c
dng trong cc mch cng hng

LED (light-emitting diode): to

nh sng
Tunnel diode: b to dao ng
in tr m
Photo diode: cm bin nh sng

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Phn cc ca diode

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Quan h gia dng

in & in p
_
+

Diode l tng

iD

ri
+
vi

vD
_

vi > 0: iD > 0 v vD = 0 (Diode ngn mch: short circuit)

vi < 0: vD < 0 v iD = 0 (Diode h mch: open circuit)

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Quan h gia dng in & in p

V d: Cho mch nh hnh v, tm dng qua diode.
a. Gi s diode ON => VD=0 vi ID>0

ID >0 (ng vi gi thit)

b. Gi s diode OFF => ID=0 vi VD<0
10=104. ID - VD =>VD= -10V
ID= 0 (ng vi gi thit)

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Quan h gia dng in & in p

V d: Cho Diode l tng, tm V?

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https://www.youtube.com/watch?v=cyhzpFqXwdA

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c tuyn Volt Ampere (VA)

Phn cc thun (vD>0):

iD I o (e

qv D
mkT

1) I o (e

vD
mVT

1)

iD I o e

v D mVT

vD
mVT

Phn cc nghch (vD< 0):

v D mVT

iD I o
I0 [A]: Dng phn cc nghch bo ho (reverse
saturation current)

q = 1,6E-19 C
k = 1,38E-23 J/ 0K: Hng s Boltzmann
T [0K]: Nhit tuyt i
m: 1 m 2: Hng s thc nghim

VT=kT/q 25:26 mV, ti nhit phng (27 0C)

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Diode thc t v xp x

V: in p ngng
Rf: in tr thun ca diode=in tr ng rd+in tr tip xc
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c tuyn Volt Ampere (VA)

V d:
I01=10-16 A, I02=10-14 A
Tnh ID1, ID2, VD1, VD2?

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Phn tch mch diode

V d:

Ri

Xt mch dng diode (V=0.7V):

1K
Vi

Tm ng ra VL vi ng vo Vi

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+
D

RL 1K
VL
_

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Phn tch mch diode

Ri
+

1K
Vi

RL 1K
VL
_

Gi s diode tt: VL< V

RL
1
VL Vi
Vi
RL Ri 2
VL 0.7 Vi 1.4V
Khi Vi1.4V: Diode dn

Vi

1.4
0

-4
0.7
0
-2

VL
t

VL 0.7V
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Chnh lu
Chnh lu l qu trnh chuyn i tn hiu xoay chiu (AC)
thnh tn hiu mt chiu (DC)
C 2 loi chnh lu:
Chnh lu bn k (Half-wave rectification)
Chnh lu ton k (Full-wave rectification)

Lu : Cc v d trong phn ny s dng c tuyn diode l tng.

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Chnh lu bn k
Chnh lu bn sng (Half-wave rectification) ri
1

vi = Vimcos(ot)

Ngun (Source)

v
+ D _
Ideal diode

iD
+

RL

Ti (Load)

vi vD
nh lut Kirchhoff v in p (KVL): iD
ri RL
vi > 0: vD = 0 (Diode ngn mch)
vi
vi RL
iD
v L RL i D
ri RL
ri RL
vi < 0: Diode h mch:
iD 0
v L RL i D 0
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vL
_

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Chnh lu bn k
in p trn ti vL:
Gi tr trung bnh:

VL, dc

VLm
1
v
(
t
)
dt

L
TT

Mch lc
to in p DC ng ra th cn s dng mch lc thng thp (LPF)
Cc b lc LPF thng dng:

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Chnh lu ton k
Ri

D1

vi

4
Ri
8

D2

RL

+
vL
_

vi

4 -

D3

+ 2

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vL

RL

D2

Hot ng v in p ra trn ti vL (Gi tr trung bnh: VL, DC

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D1

D4

2VLm

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Mch lc
D1
5
1

vi

6
4
D2

RL

+
vo
_

Hot ng:

T C c np nhanh n gi tr Vmax ca in p v0(t).

R C
Khi v0(t) gim, t C phng in qua RL vi quy lut: vo (t ) Vmax e L

Qu trnh tun hon vi tn s chnh lu fp:

fp = 2f0 : Chnh lu ton sng
fp = f0: Chnh lu bn sng
Vi f0: tn s ca ngun vi.
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Mch lc
D1
5
1

vi

6
4

RL

+
vo
_

D2
8

Xp x tn hiu ng ra bng dng sng rng ca

T C:

Vmax
C
Vf p RL

in p gn sng hiu dng: (v0 ) rms

H s dn sng:
Chng minh: xem ti liu
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Ripple factor

Vmax Vmin
2 3

V0 ( rms )
V0, DC

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Chnh lu ton sng

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Mch xn
Dng loi b tn hiu nm di (hay trn) mt mc chun (reference
level)
R
Xn trn:
vi

VB

vo

Xn di:

Xn 2 bin:
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Mch xn
Xn 2 bin:

Gi s D1, D2 tt: Vo=Vi

uD1<0 -V - Vo <0 Vi > -V

uD2<0 Vo V <0 Vi < V
Vy V < Vi < V Vo=Vi

Gi s D1 dn, D2 tt: Vo=-V

iD1>0 -(Vi+V )/R>0 Vi < -V

uD2<0 Vo V < 0 -2V < 0
Vy Vi < -V Vo=-V

Gi s D1 tt, D2 dn: Vo=V

uD1<0 -V - Vo <0 -2V<0
iD2>0 (Vi V)/R >0 Vi > V
Vy Vi > V Vo=V
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Mch nhn i in p
Mch nhn i in p mt bn k:
C1
1

D2

5
D1

C2

Bn k m ca vS: C1 np in qua D1 n in p VSmax

Bn k dng ca vS: in p chng chp ca C1 v vS np in cho
C2 qua D2 n in p 2VSmax
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Mch nhn i in p
Mch nhn i in p hai bn k:
1

D1

D2

RL

vS
4

Bn k dng ca vS:

C2

C1

C2 np in qua D1 n in p VSmax
Tng in p vS v VSmax trn C1 (c np t bn k trc) t ln ti RL
thng qua D1

Bn k m ca vS:

C1 np in qua D2 n in p VSmax
Tng in p vS v VSmax trn C2 (c np t bn k trc) t ln ti RL
thng qua D2
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Mch ghim in p
Thc hin vic di chuyn tn hiu (shifting operation) theo trc Y vi
dch chuyn ph thuc vo dng sng ng vo sao cho tn hiu ng ra
lun c ghim (clamped) ti mt gi tr c nh.
V d: Gi s Diode l tng, RC >> T v Vm > VB
C

VC = Vm -VB

vi

vo
VB

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Mch ghim nh

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Mch Logic s - Cng OR

Gi s D1, D2, D3 l cc Diode l tng:
Khi V1 (hoc V2, hoc V3) >0

D1 dn (hoc D2, D3 dn)

Vout>0 Ta c mc HIGH
Khi V1 v V2 v V3 <= 0

D1 v D2 v D3 tt
Vout<= 0 Ta c mc LOW

Cng OR

Biu thc dng logic: Yout=A + B + C

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Mch Logic s - Cng AND

Gi s D1, D2, D3 l cc Diode l tng:
Khi V1(hoc V2, hoc V3)< Vcc

D1 dn (hoc D2, D3 dn)

Vout =Vinput Ta c mc LOW

Cng AND

Khi V1 v V2 v V3 > Vcc

D1 v D2 v D3 tt
Vout=Vcc Ta c mc HIGH

Biu thc dng logic: Yout=A.B.C

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Diode Zener
Diode Zener: diode to in p chun: vZ = VZ = constant
Hot ng ch yu trong vng phn cc nghch

K hiu v c tuyn VA
Phn cc thun: nh Diode thng thng
Phn cc nghch: I Z max iZ I Z min

VZ: in p Zener
IZmax: Dng phn cc nghch ti a ca
Diode Zener
IZmin: Dng phn cc nghch ti thiu
vZ = VZ, thng IZmin = 0.1IZmax
PZmax = VZ IZmax: Cng sut ti a tiu
tn trn Diode Zener

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Diode Zener
iR

Mch n p dng Diode Zener:

iL

Ri

vS v iL: khng n nh

vS

iZ

+
VZ
_

RL

Thit k mch sao cho Diode Zener hot ng trong vng n p:

IZmax iZ IZmin , vZ = VZ

Phn tch R vS VZ vS VZ
i

iR

iZ i L

iZ

vS VZ
iL
Ri

IZmax iZ IZmin vi mi gi tr ca vS v iL:

min(iZ) IZmin v max(iZ) Izmax

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VS min VZ

min(
i
)

I L max I Z min
Z

max(i ) VS max VZ I
Z
L min I Z max

Ri
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Diode Zener

VS min VZ
VS max VZ
Ri
I L max I Z min
I L min I Z max

Vi yu cu v ngun (vS) v ti (iL) cho trc

VS min VZ
V
VZ
S max
I L max I Z min I L min I Z max
Thng chn IZmin = 0.1 IZmax
Chn Diode Zener :
v:

I Z max I L max

v:

I Z max

I L max (VS max VZ ) I L min (VS min VZ )

VS min 0.9VZ 0.1VS max

I Z min 0.1I Z max I L min I Z max 10 I L min

Thit k: Lm theo th t ngc li xc nh IZmax ca Diode Zener v Ri

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Diode Zener
Diode Zener thc t
c tuyn VA

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Bi tp
1.3, 1.8,
1.10, 1.11,

1.18, 1.19,
1.22, 1.23, 1.24,
1.31, 1.39,
1.40, 1.41,
1.44

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Vd

ri

+
+

DIODE

_
VL

RL
Vi

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Rt

+
+

Phan tu phi tuyen

Vd

Vt
_
_

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Cu trc nguyn t

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Cu trc tinh th

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Cc mc nng lng

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S dn in trong cht bn dn
Dng khuch tn (diffusion current): Khi c s thay i mt
electron (hole)

Dng chy (drift current): Khi c in trng ngoi

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Phn loi bn dn
Doping
L qu trnh a vo cht bn dn cc cht khc cn thit.

Bn dn loi p
Cht a vo: cht nhn (acceptor material). V d: Boron (III)
Cu trc tinh th v s mc nng lng (xem trang sau)
Phn t mng in ch yu: L trng (positive): p-type material

Bn dn loi n
Cht a vo: cht cho (donor material). V d: Phosphorus (V).
Cu trc tinh th v s mc nng lng (xem trang sau).
Phn t mang in ch yu: Electron (negative): n-type material

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Bn dn loi p
Cht a vo: Cht nhn (acceptor material). V d: Boron (III)
Cu trc tinh th v s mc nng lng

Phn t mang in ch yu: L trng (positive): p-type material

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Bn dn loi n
Cht a vo: Cht cho (donor material). V d: Phosphorus (V)
Cu trc tinh th v s mc nng lng

Phn t mang in ch yu: Electron(negative): n-type material

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c tuyn Volt Ampere (VA)

V d:

I01=10-16 A, I02=10-14 A
Tnh ID1, ID2, VD1, VD2?

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Stopwatch

30 20
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