Problem Set 2

1. Calculate the value of the applied forward voltage for a p-n junction diode if I s=50A,
I=2A, e/kT= 40.
(0.265V)
2
2. The saturation current density of a p-n junction Ge-diode is 200mA/m at 300K. Find the
voltage that would have to be applied to cause a forward current density of 10 5 A/m2 to
flow.
(0.34V)
3. Consider a GaAs sample at T=300K with doping concentration Na=0 and Nd=1016 cm-3.
Assume complete ionisation and assume electron and hole mobilities given as 8500
cm2/V-s and 400 cm2/V-s. Calculate the drift density when applied E- field is E=10V/cm;
ni=1.8106cm-3.
(136 A/cm2)
4. Assume n-type GaAs at 300K, the electron concentration varies linearly from 110 18 to
71017 cm-3 over a distance of 0.1 cm. Calculate the diffusion current density if D n=225
cm2/sec.
(108 A/cm2)
5. Assume the donor concentration in n-type semiconductor at T=300K is N d(x)=1016-1019x
(cm-3) where x is given in cm and ranges from 0x1. Determine the induced E-field in
thermal equilibrium.
Ex

0.0259 1019
1016 1019 x

(
)
6. Assume mobility of particular carrier is 1000 cm2/V-s at 300K. Determine the diffusion
coefficient.
(25.9 cm2/s)
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