“FAIRCHILD SEMICONDUCTOR au pe Bsueae74 ooezvaa o Ef 3469674 FAIRCHILD SEMICONDUCTOR 840 27488 Om ——— 4N4009/FDLL4009 ——— Ultra High Speed Diodes Secnneraer cone T.03-04% PACKAGES ns00e 0095 FoLltcoe = Lkot [ABSOLUTE MAXIMUM RATINGS (oto 1) Temperatures 1 you need this device In tho Rorage Fenperatre Range estore s200¢ SOT package, an. oletical Hotiun Jeon pert Tongraur ieto, coueanriptealebiss cee Lone Temperture 200° FDs01200 family. Powe bastion (ios 2) rail Powe: spation a 25°C Ambion 00 0 tear Powe asamnrre Maximum Voge and Caront ‘a av ; 131 ro s00ma i - coma soe) Peak orward Surge Curent ‘owen Pulse Width = 18 0A Puce wih = te toa ELECTRICAL CHARACTERISTIC (250 Abin Tempore wes chro rted _ ‘sywoot | __GHARACTERGTIC iuns_[_wax_| Unt | Test covarrions = erwardVooae wo |v _[ enone 7 cs Tavere Oren a | w Bardo Ve % Wo = 6008 e evr Racve Tie Tame | siy= toma oie @ Cepactance 7 7 ao [| vee r= comme a EEE EES 3-208FAIRCHILD SEMICONDUCTOR BY DER a4e9b74 o027489 2 r- 3469674 FAIRCHILD SEMICONDUCTOR e4p 27489 1N/FDLL4151/4152 1N/FDLL4153/4154 High Speed Diodes T03-% — FAIRCHILD — A Sehlumberger Company +0..-4 pF (MAK) PACKAGES tens aA @ 10 mA, 8 V, 100.2. anatst 00-35 sNais2 00-35, ABSOLUTE MAXIMUM RATINGS (Note 1) iNaisa 0.35 ‘Temperatures aNsi64 00-35 lorage Temperature Range = 85r0 1042 FDLLATSS tse Maximum Junction Operating Temperature Hiree— FoLLatse tose : eed Teme 280°C FDLLATSS use FOLLATE4 ucsa Power Dissipation (Note 2) ‘Maximum Totel Power Disipation at 26°C Ambien! 500 mv Unear Power Deating Factor gsm" if you need this devies in the SOT package, an electical ‘equivalont 1s available. Soe Maximum Voltage and Cu Fe Working verse Ve tNass1 sv sNes5a.60¥ INd162 80 NAI64 25 lo ‘Average Rectified Current So te Fore Cran sco ma i 00 mA 1 core Lose) Lon Pace wath = C8 aoa ELECTRICAL GHARACTEMSTICS (2%C Ane Tempers tale Rte rao] GHARACTERSTO van [ax ote [ Tear ConamiONs ve | Forward aise 10 | v [eam smaseeatnaiea ex | ¥ oi | ¥ |iprozsm cer | ¥ |iezsoma a nae or fo | Vaeasv foo | mA [RDEBv.ta* tore a aos | an |vansov co | mm | van sovtas tse sms eos | fa |Vazaov eo | ta [vas sovta = 10% 16 v_ | eso te Revorse Recovery Time ao | Gannon 70 404 9-208| FAIRCHILD SEMICONDUCTOR _ : a4 pe Bsyeae74 ooz74aa o 3469674 FAIRCHILD SEMICONDUCTOR 84D 27491, FAIRCHILD 1N4728 through 1N4752 —— 1W Silicon Zener Diodes. T="- «3 ABSOLUTE MAXMUM RATINGS (ote 1) PACKAGES ae allDeviees—Do-t Thora Temperate Range 25% to $200°0 Mexamen anton Sper Tenperatico ti09%e teed Temperate ta00%8 Power besoaton (ote 2) tm Toa lsapation tS0°C Ambient 1H oer eraing Factor (rom 60°C) ser mwiee um Surge Power (ote 8) ‘ow ELECTICAL CHARACTERISTICS (25° Anion) SyMo. | | ix |e | in| ewes Hasina | Test | Maxine [Toot | Minn axiom | Monnen Soren” | caret hat face | “oer Cranctorste Ingeence inpwsnrce rent caret | So00 ‘wet Taw ovnr atea) | Seren oer en ot or ° a i ware 3s | 190 we [13 || 10 | are | tao whee gs | 00 fo | i) to | te | ae | tam wneoo as |e wo | io] “| te | me wnest a] ee | ie] © | te | aw marae a | ae wo | is) i | to | im eras a] we | io] i | to | tm erst ge] 88 so | io] i | zo | we ed 2 | 3 wo | io | i | Se | te os | te | so os | ie | fs ———— 21 |—FAIRCHILD SEMICONDUCTOR 4 DeBsuese74 ooezusa a 3469674 FAIRCHILD SEMICONDUCTOR 84D 27492 me 1N4726 through 1N4752 Huei ELECTRICAL CHARACTERISTICS (26°C Ambon) ‘svat ve | | x | ote’) | “ore ‘over er | lr wr v a a ma oa Naas we [eo | Zao as [50 inaraa we | so | 20 oa | 80 mara wae | soo | iso oa | so nara wo | 200 | uo oa | 50 inarar no | 20 | ts oa | 80 inarae mo | zo | ins oa | so so | ao | 75 oa | 80 3.212“FAIRCHILD SEMICONDUCTOR ay DE Bfsyese74 oo27493 4 i 3469674 FAIRCHILD SEMICONDUCTOR 840 27493 Dam 1N5226 through 1N5257 a FAIRCHILD 500 mW Silicon Zener. Diodes a ‘éenumbergor Company Twas i [ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGES: i ee Ni Devices 00-95 ‘Sorage Temperature Range 65°C 10 +200°6 Maximum dunction Operating Temperature 200" 1 ead Temperature Theos pation Note 2) Total Power Dlsipation at 76°C Ambient 600 mw ‘Power Darang Factor (rom 76°) somwire Maximum Surge Power (Note 3) row ELECTRICAL CHARACTERISTICS (25°C Ambion none care noted sweot [vz | 2% | tr | tm ny Var 7, Nowinat | Mexia | Test | _Noxinom | Maximum Tea Vokaoe Menem Caracas | Zener | Zonet | Curent | Zener ‘Guest @ Var Temperate impedance (ooticien Gites | 220% |s10.5,2, 19) 220,108 | 25,210 | “ove on = 0.25" tolerance |vzToteasce | vzTetarance | te) ma |e a 7A v v wre 700 | 2s ‘06 vo | =0are 0 ‘is O98 to | eons 78 10 098 to | e080 Ps ey 095 to | Somes 2 20 aa 30 | Yes 2 30 er 60 | Foose 2 30 82 8s 2 20 20 ae : regFAIRCHILD SEMICONDUCTOR au DEB suese74 ooeuay e 3469674 FAIRCHILD SEMICONDUCTOR e4D 27404 0 1N5226 through 1N5257 Fu 1d [ELECTRICAL CHARACTERISTICS (25°C Anbint nla otherwise wot) Vv a os 2A v vv a ees oH erie a 2 ee a 2214FAIRCHILD SEMICONDUCTOR yu DeMsyeae74 ooa7uas a ' 3469674 FAIRCHILD SEMICONDUCTOR 84D 27495 oe FAIRCHILD 33 0. FAIRCHILD 1N5282 THOR OF — High Conductance Ultra Fast Diodes NSenumberger Company ree govomeson PAckAGES Seuearenecth: oan hae © typ 4.0 m8 @ It = by = 10 mA to 200 mA bere ‘990LUTE MAKMUM RATING (ot 1 -esrcte t200%0 atom Stin ay Tenperatve tree tsar tao Power Dtspaon (st 2) Wit foe ato 928° nln 0 mi toa Dering Pact toe °C) aso Maximum Votags and crane wi vag mre Vaage soy OY Metage Reeos Case soon Soma Meenoe toa 134 LECTMEAL CHARACTERISTIC (°C Ani Teng se shut nts) anno. | awncrenstc nt || os] — esr cons We Foard Vue vee v | ex toma bee v | ErSom oe ‘ “hw — nk Vasey ’ 40 . Y= = (mA 10 200A Bet tt | Foran Recor ae a/aoa) are pi | es overt tas 30 |v [he toma oi e Caoncce eon =a aeFAIRCHILD SEMICONDUCTOR ———S~S~«~SSCE BP BLL DZTSOO I : FAIRCHILD 18920/921/922/923 FDLL920/921/922/923 General Purpose Diodes Tol-0% ‘Schlumberger Company 1.2 049 @ 200 ma PACKAGES 1 t= 100 ma (HA @ RATED WY 15920 00-35 15821 0-35 [ABSOLUTE MAXIMUM RATINGS (Note 1) 15022 0-35 Temparatures 18023, 00-35, ‘Storage Temperatue Range 85°C 10 4200" © FDLLOR0 Lesa ‘Maximum Junction Operating Temporatre tire FoLLe21 Lesa Lead Temperatre 4200" FoLLeze Lose Power Dissipation (oto 2) FouLa23 tha ‘Maxinum Total Dissipation at 25°C Anbiont 500 mW near Dorting Faster (rom 26°C) S.a5mW/°6 If you need this device in the ‘SOT package, an loctical Maximum Voltage and Currente equivalent Is. avalable, See 8020 19021 18022 18023 F9S01400 family, WIV Working inverse Votage faa (25°C to +100°C) ee ae Forward Curent 200m 200A 200A 200mA if —Rocuron Peak Forward Curent 600 mA 600A 600mA 600 mA IWeurge) Peek Forward Surge Current Pulse wigth= 1 8 0A 0A 408 104 wath = 48 4OA 404 40K 408 [ELECTRICAL CHARACTERISTICS (26°C Ambient ature unless otherwise noted) oe vin [wax fonts [TEST CONDTIONS ® Toerse Coren | wo | aa | Vp = rated wv 10 | tk_|_ Vee rated uv. t4 = 100%0 ve Forward Vote 2 12 |v | ip tooma = e ‘Capacance es | oF | va=ot= tae Cy ‘Stored Chaos | 00 | = 10mA a= ov_ FAIRCHILD SEHICONDUCTOR 3469874 FAIRCHILD SEMICONDUCTOR ean 27502 vs —— 2N/MPS/FTSO706 735-23 ae MPS/FTSO706A ‘RSehiumborger Company NPN High Speed Logic Switches © Veen «+. 20 (Min) @ 10 mA PACKAGE, tre =, 20 (Min) @ 10.mA 2N705 To-1184 ry. 60.5 (Max) 2N/MPS/FTSO70E), 25 ns (Max) ps7 T0-92 (hPs/FTSO7068) MPS706A —TO-02 ‘+ Comploments .... MPS3640 (T0-02) FTSO706 —_TO-286AA/A8 FTSOTOEA —TO-296AA/AS ABSOLUTE MAXIMUM RATINGS (Note 1) 2N _MPS/FTSO 65°C to 175°C -55°C 10 150°C (Operating Junetion Temperature 780 150°C Power Dissipation (Notes 2 & 3) ‘otal Dissipation at 2N MPS—_FTSO. 25°C Ambient Temperature osmW — 0625W 0350" 25°C Case Temperature 1OW 10 Voltages & Currents 70s 706A eso Collector to Base Voltage av 2v Veen Collector to Emitter Vor mv 20v (Rex < 10.0) (Note 4) eso. Emer to Base Voltage 30v 50V Electrical Characteristics (25°C Ambient Temperature unless otherwise noted) (Note 6) |_mesvos [7088 sywou| CHARACTERISTIC. MIN” wax [Min Max | units | Test CONDITIONS: ‘BVego [Collector to Emilter Breakdown] 15, 16 Vo [e=10mA =o Votage Bean | Collector to Emitter Breakdown] 20 Ey Vv Votago ‘BVeao | Collector to Base Breakdown | 25 = | Vv Voltage Emitter Cutott Gurren 10 70 | oa Collector Cutott Current 500. 00_| na. ‘DC Current Gain (Note 8) | 20 20 | 60 Ramee Sr tn a 8h 3-222 Se DEB s4e7e74 corse 2FAIRCHILD SEMICONDUCTOR 3H DEY a4es74 ooe7so3 3 3469674 FAIRCHILD SEMICONDUCTOR @4D 27503, 2N/MPS/FTSO706 MPS/FTSO706A 7-35-23 ELECTRICAL CHARACTERISTICS (25°C Amblont Temporature u otherwise noted) (Note 6) T wPS706_| 705A] symaou| CHARACTERISTIC. Min”wax [min max | units | __test conoiTioNs: 7 Vener | Collector to Emitter Saturation 08 os | Vv { Voltage (Note 5), Veena | Base to Emittor Saturation oe [or pow |v Voltage (Note 8) Go| Output Capacitance a0 oo | F Te | High Frequency Current Gain | 20 20 w Base Resistance w | a 7 ‘Ghargo Storage Time Con | ne (test eirult no. 3111) te) Turn On Time 7% 4 | ne [le=10mA, lov=a0mA, est cieult no. 9) Veo=3.0V. ta | Tum of Time 75 7 | ne [le=10 mA ta = 80 mA, (ast elreult no, 89) leg 1.5™mA, Veo =30V ‘aNvos T syMBOL| CHARACTERISTIC. MIN MAX | UNITS ‘TEST CONDITIONS BVeex | Collector to Emitter Sroakdown 20 Vo [les tO mA, Ra Voltage ‘BVeeo | Collector to Base Breakdown 5] Vv Voltage. Tee | Collector Gutoff Current 300] nA Thre | BO Gurrent Gain (ote 5) 2 Vesmw | Collector to Emitter Saturation oe | Vv Vottage (Note 8) Vers | 8aso to Emitior Saturation os |v Vottage (Note 5) Gx__| Output Capacitance 0 | oF The | High Frequency Current Gain 20 TO mA, Vee 18V, {oo Ne a ‘Charge Storage Time Constant | ns (test creat no, 191),