2SA1339 / 2SC3393

Ordering number : EN1392C

SANYO Semiconductors

DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors

2SA1339 / 2SC3393

High-Speed Switching
Applications

Features

Ultrasmall-sized package permitting sets to be smallsized,slim.

High breakdown voltage : VCEO=()50V.
Complementary pair transistor having large current capacity and high fT.
Adoption of FBET process.

Specifications ( ) : 2SA1339
Absolute Maximum Ratings at Ta=25C
Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--)60

Collector-to-Emitter Voltage

VCEO

(--)50

Emitter-to-Base Voltage

VEBO

(--)5

Collector Current
Collector Current (Pulse)
Collector Dissipation

IC

(--)500

ICP
PC

(--)800

mA

300

mW

Junction Temperature

Tj

Storage Temperature

Tstg

mA

150

--55 to +150

Electrical Characteristics at Ta=25C

Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

Symbol
ICBO
IEBO

Gain-Bandwidth Product

hFE
fT

Output Capacitance

Cob

Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)10mA
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz

* ; The 2SA1339 / 2SC3393 are classified by 10mA hFE as follws:

Rank
S
T
hFE
140 to 280
200 to 400

Ratings
min

typ

max

140*

Unit

(--)0.1

(--)0.1

400*
(200)300

MHz

(5.6)3.7

pF

Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 / 42806EA MS IM TB-00002260 / 83002TN (KT) / 71598HA (KT) / 3197KI /1114KI, MT No.1392-1/5

2SA1339 / 2SC3393
Continued from preceding page.
Parameter

Symbol

Collector-to-Emitter Saturation Voltage

VCE(sat)

Base-to-Emitterr Saturation Voltage

VBE(sat)

Collector-to-Base Breakdown Voltage

V(BR)CBO

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

Emitter-to-Base Breakdown Voltage

V(BR)EBO

Turn-On Time

ton
tstg

Storage Time
Fall Time

tf

Ratings

Conditions

min

IC=(--)100mA, IB=(--)10mA
IC=(--)100mA, IB=(--)10mA
IC=(--)10A, IE=0A
IC=(--)100A, RBE=

Unit

max

(--0.15)0.1

(--0.4)0.3

(--)0.8

(--)1.2

V
V

(--)60

(--)50

IE=(--)10A, IC=
VCC=20V, IC=10IB1=--10IB2=100mA

(--)5

V
70

ns

VCC=20V, IC=10IB1=--10IB2=100mA

400

ns

VCC=20V, IC=10IB1=--10IB2=100mA

(50)70

ns

Package Dimensions
unit : mm
7524-004

Switching Time Test Circuit

IB1

PW=10s
D.C.1%

OUT

RB

INPUT
2.2

4.0

typ

IB2

VR

RL
200

1.8
3.0

50
+
100F

0.4
0.5
0.6
15.0

0.7

0.7

IC -- VCE

--300A

--200A

--40
--100A

--20

IB=0A
--0.2
--0.4
--0.6
--0.8
--1.0
Collector-to-Emitter Voltage, VCE -- V ITR03246

IC -- VCE
700
A
60
0
A

100

A
00 400A
5
---

Collector Current, IC -- mA

--7
00
A

--600
A

Collector Current, IC -- mA

1 : Emitter
2 : Collector
3 : Base
SANYO : SPA

2SA1339

--80

0
0

For PNP, the polarity is reversed.

1.3

3.0
3.8

--60

0.4

1.3

--100

VCC=20V

--5V

0.4

+
470F

50

A
0

2SC3393

A
400

80

300A

60

200A
40

100A
20

IB=0A
0

0.2

0.4

0.6

0.8

1.0

Collector-to-Emitter Voltage, VCE -- V ITR03247

No.1392-2/5

2SA1339 / 2SC3393
--6
0
A

IC -- VCE
0
--5

2SA1339

A
--40

--16

0A

--3
--12

--20

--8
--10A

--4

IB=0A
--10
--20
--30
--40
Collector-to-Emitter Voltage, VCE -- V

0
0

--40

IB=0A
0

10

20

30

40

50
ITR03249

IC -- VBE

2SC3393
VCE=5V

60

25C

--25C

80

40

20

--0.2
--0.4
--0.6
--0.8
Base-to-Emitter Voltage, VBE -- V

--1.0

0.2

0.4

0.6

0.8

1.0

Base-to-Emitter Voltage, VBE -- V

ITR03251

hFE -- IC

2SA1339
VCE= --5V

1000

ITR03250

hFE -- IC

2SC3393
VCE=5V

1000
7

Ta=75C

25C

--25C

DC Current Gain, hFE

100
7

100
7

3
5

--10 2 3 5 7 --100 2
Collector Current, IC -- mA

f T -- IC

1000

2SA1339
VCE= --10V

7
5
3
2
100
7
5
3
2
10
7
2

7 --10
2 3
5 7 --100 2
Collector Current, IC -- mA

2
1.0

5 7 --1000
ITR03252

5 7--1000
ITR03254

7 10

7 100

Collector Current, IC -- mA

5 7 1000
ITR03253

f T -- IC

1000

2SC3393
VCE=10V

Gain-Bandwidth Product, f T -- MHz

25C
--25C

Ta=75C

--1.0

10A

Ta=75C

--25C

Collector Current, IC -- mA

--60

25C

Ta=75C

Collector Current, IC -- mA

20A

100

0
0

DC Current Gain, hFE

30A
8

120

--20

Gain-Bandwidth Product, f T -- MHz

40A
12

Collector-to-Emitter Voltage, VCE -- V

2SA1339
VCE= --5V

--80

2SC3393

50A

ITR03248

--100

2
--1.0

60A

16

--50

IC -- VBE

--120

IC -- VCE

20

Collector Current, IC -- mA

Collector Current, IC -- mA

--20

5
3
2
100
7
5
3
2
10
7
5
1.0

7 10

7 100

Collector Current, IC -- mA

5 7 1000
ITR03255

No.1392-3/5

2SA1339 / 2SC3393
Cob -- VCB

Cob -- VCB

Output Capacitance, Cob -- pF

10
7
5

Collector-to-Emitter Saturation Voltage, VCE(sat) -- V

Base-to-Emitter Saturation Voltage, VBE(sat) -- V

2
--10
Collector-to-Base Voltage, VCB -- V

--1.0

3
2

--1.0

VBE(sat)

5
3
2

--0.1

(sat
V CE

5
3
2
5

--1.0

5
--10 2 3 5 --100
Collector Current, IC -- mA

5 --1000
ITR03258

tstg

5
3
2

tr
0.1

tf

7
5
3

td

--10

2
--100
Collector Current, IC -- mA

7
5

DC

100
7
5

ms

10

0m

op

era

tio

3
2
10
7

10

ITR03257

VCE(sat), VBE(sat) -- IC

10

2SC3393
IC / IB=10

5
3
2

VBE(sat)

1.0
5
3
2
0.1
5

(sat
VCE

3
2
0.01

1.0

10

100

Collector Current, IC -- mA

5 1000
ITR03259

SW Time -- IC
2SC3393
VCC=20V
IC=10IB1= --10IB2

1.0
7

tstg

5
3
2

tf

0.1
7
5

td

tr

10

100

Collector Current, IC -- mA

ITR03260

1m
10

ITR03261

PC -- Ta

400

ICP
=800mA
IC
=500mA

Collector-to-Base Voltage, VCB -- V

0.01

ASO

1000

Collector Dissipation, PC -- mW

0.01

2SA1339
VCC=20V
IC=10IB1= --10IB2

1.0

1.0

SW Time -- IC

ITR03256

2SA1339
IC / IB=10

10

1.0

VCE(sat), VBE(sat) -- IC

--10

--0.01

Switching Time, SW Time -- s

Collector-to-Emitter Saturation Voltage, VCE(sat) -- V

Base-to-Emitter Saturation Voltage, VBE(sat) -- V

1.0

Collector Current, IC -- mA

2SC3393
f=1MHz

Switching Time, SW Time -- s

Output Capacitance, Cob -- pF

2SA1339
f=1MHz

300

200

100

5
3

For PNP minus sign is omitted.

3

7 1.0

10

Collector-to-Emitter Voltage, VCE --

7 100
V ITR03262

20

40

60

80

100

120

Ambient Temperature, Ta -- C

140

160

ITR03263

No.1392-4/5

2SA1339 / 2SC3393

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This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No.1392-5/5