EEE/ECE/INSTR F214/EEE C381: ELECTRONIC DEVICES(EDIC)

Assignment #1, Due on 10/10/2013 in Tutorial Class

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1. Given that the density of states as a function of Energy E is g(E) = 4(2m)
h3
calculate the density of states per unit volume with energies between 0 and 1 eV

2. Design and sketch a photoconductor using a 5m thick CdS, assuming that

n = p = 106 s and Nd = 1014 cm3 . Thee dark resistance should be 5M and the
device must fit in a square 0.5 cm on a side; therefore, some sort of folded pattern is in
order. With an excitation of gopt = 1021 EHP cm3 s1 , how much is the resistance
change?
3. Given that the Haynes-Shockley experiment was conducted on a n-type Ge sample and
the following data was obtained, Determine the mobility and diffusion coefficient.Use
the formulae from your textbook.
Data: l = 1cm d = 0.8cm V = 2V td = 2.2 104 s t = 95s
4. Consider the direct recombination of electron-hole pair in GaAs(Eg = 1.43eV ) at 300K.
What is the maximum wavelength of the emitted radiation?
5. A piece of silicon is doped with 1.2 1016 cm3 of Boron atoms. Assuming that all
Boron atoms are completely ionized at 300K,determine the position of the Fermi level
and indicate the same in an energy band diagram.
6. A silicon sample is doped with 1018 atoms of Boron per cc. What is the equilibrium
concentration of holes at T= 300 K ? Where is EF relative to Ei ? Use ni = 1.5 1010
electrons per cc
7. Calculate the minimum conductivity of silicon at 300K.
n = 1350cm2 /V s p = 480cm2 /V s
8. A silicon sample with 1016 cm3 donors is optically excited using a laser such that
1019 cm3 electron hole pairs are generated per second uniformly in the sample. The
laser causes the sample to heat up tp 450 K. Find the quasi-Fermi levels and the
change in conductivity of the sample upon shining the light.
n = p = 10s. Dn = 36cm2 s1 Dp = 12cm2 s1 quadni = 1014 cm3 at450K. By how
much does the conductivity change upon shining light?
9. Construct a semi-log plot between concentration and time (Fig 4-7 from textbook) for
silicon doped with 2 1015 cm3 donors and having 4 1014 EHP cm3 created
uniformly at t=0. Assume that n = p = 5s. Calculate the recombination coefficient
r for the low-level excitation above.
10. (a) What is the difference between density of states and efective density of states?
(b) How do you measure charge carrier mobility and carrier concentration?
(c) What is the mobility of an electron in vacuum?