MOTOROLA SC {XSTRS/R FP ae defese72sy oosocos 3
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MOTOROLA BD516
=a SEMICONDUCTOR Lee BD518 i
: BD520
PNP SILICON ANNULAR”
AMPLIFIER TRANSISTORS
PNP SILICON ANNULAR 2,0
AMPLIFIER TRANSISTORS
designed for gonral purpose, high-voltage amplifier and iver
Beco
1 Emiter Breakdown Voltage
15 Vae (Win) @ len} mage — BDEIS
20 Vas (Min) I= 1 made — OD518
80 Ve (Min)@ Ig 1 made — BDS20
«+ Hish Power Disinaton — Pp = 10 W@ Te = 25°C
«Complements to 80516, 80517, 80519
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‘SMALL SIGNAL CHARACTERISTICS
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‘laune 1— De CURRENT GAIN
‘OURE 3 0C SAFE OPERATING AREA
3340
Flaune 2— oN votrAaes
FIGURE 4-~ CURRENT-@AIN-RANDWIOTH PRODUCT
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