RE DE Bje3e7254 gosoko3 8 f (XSTRS/R FD 960 80603 D 6367254 MOTOROLA MOTOROLA BD515 | 1 SEMICONDUCTOR sae BD517 i: | TECHNICAL DATA BD519 NPN SILICON. AMPLIFIER TRANSISTORS : NPW SILICON ANNULAR 48-40-20 vous AMPLIFIER TRANSISTORS 2 Wars sgnad for general-purpose. high-voage amir and iver ‘ooscotons «High Coltctor-Emiter Breakdown Voltage — BV ceo." #8 Vac (Win) @ Ie = 1 mace — BOSIS (CEO Go vac (Mine IC =1 made — 8DSI? 10 Ve (Min) @ Ig =1 mAde — BOSIO 1 High Power Disintion Pp =10W OT = 26°C 1 Complments to 80516, 80518, 80520 [ects Vata See ‘wrte bo 30e ° 8 en Durie above 280 ° 00 naire ee a Tim | ee THERMAL CHARACTERISTICS hai ee it ART tua [125 Pea + 3.3379B DE Be3e7254 cosoeoy o 96D 80604 T-33-07 Tips 00 pase gO) 2 = : ‘ON cHaRaCTERISTICS ‘De torent con WE Tig 10 mae Vog=20 Ve — | ns Ui eo'made $8 Po ey @ | (igo made VGE=20 ve) & Es {gS eos sz |e Tae vey ‘Woy = 10 ee ig 0.4 100 ke) allan = FIOURE 1—TYPICAL OC CURRENT GAIN FIGURE 2-—"SATURATION” AND “ON” VOLTAGES. 3.398