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7 Jfet Characteristics: 7.1 Objectives
7 Jfet Characteristics: 7.1 Objectives
7 JFET Characteristics
7.1 Objectives
Terminology
Intrinsic noise of FET is lower than BJT, which makes FET suitable for the input
stage of low-Ievel amplifier
During operation the thermal stability of FET is higher than that of BJT.
However, FET also has some drawbacks: comparing with BJT, its product of
gain and bandwidth is smaller and it is easier to be damaged by static electricity.
a-) n-channel
b-) p-channel
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n-channel JFET
p-channel JFET
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7.4 Procedures
Procedure 1: Measurement of IDSS
D
G
Fig. 7.6
( 3 ) For measurement of VDS use digital voltmeter on KL-200 device and for
measurement of ID use Analog multimeter.
( 4 ) Adjust VDS to values of in Table 7.1. Measure yielding ID for each step
and record them in Table 7.1.
&Note that, since VGS = 0 V, ID equals to the characteristic IDSS current of the
JFET.
VDS
100(mV) 500(mV)
1V
2V
ID (IDSS)
Table 7.1
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4V
6V
10V
15V
Fig. 7.7
( 2 ) Connect +12 and 12 V power supplies.
( 3 ) Use Multimeter to measure V.
( 4 ) Adjust 1M pot according to values of VGS (V2) in Table 7.2
( 5 ) For each step, measure VG (V1) and calculate yielding ID and record
them in Table 7.2.
VGS
- 0.25
-0.75
-1.00
ID
Table 7.2
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-1.25
-1.50
-1.75
-2.00
Compare the results of experiment and the datasheet (IDSS and Vp) whether
they are same or not.
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