Assignment -IL MOSFET. Due date: -19-2016 Ate dole 1. In the cireuit shown below the transistor parameter are as Follows Wye 2¥. Kyat may? to SR mei ad yee 1 ake Aiev The Value of Vsg is ‘The Value of ID is The Valuc of VSD is 2. The PMOS transistor shown below has parameters Vr = -1,2 V, W/L: And k'n = 30 WA/V>, Ip= 0.5 mA, Vp=-3 V Find R, and Ro acy J 3. In the following circuit, transistors Q1 and Qe has following parameters (W/L), = (W/L)a = 20. (Vrighi = (Viua=1V, (Kn), = (Kona = 100 wavy? Find V,, Voand Vs ae4. In the cireuit shown below, the MOSFET parameters are as follows Ip = 0.5 mA R=? Re? ev | 4 R 1% +26 \ oe aA Po Mov 5. Consider the Common source amplifier shown below. The transistor parameter are Vy = 15 V, Ky=0.5 mA/V", and 4= 0.01 V" The resistance of source is R,= 4 KQ, lev pene Boke wt ve Rs gone ee ‘The small signal voltage gain Av = ‘The amplifier output resistance is ‘The amplifier input resistanc6. Consider the cascade circuit shown below. The transistor parameter are Vr 1.2V 8 mA ‘The values of transconductance gm) and gm; for MOS MI and MOS M2 are What is the value of small signal voltage gain A= vow 7. In the MOSFET amplifier show in the fig below, the transistor has w= 50 ry = 10 KQ, Co. = 5 pF. Cxy= 2 pF. Draw a small signal equivalent circuit for the amplifier for midband frequencies and calculate its midband voltage gain. Roa dokn soMF Ne8. The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n-channel MOSFET M, the transconductance gm= | mg, and the body effect and channel length modulation effect are to be neglected. ‘The lower cutoff frequeney in Hz of the circuit is, approximately at 9. Inthe MOSFET amplifier of the figure, relationship between the signal output VI and V2 is 10. Write about device structure, physical operation and current voltaze characteristics of n-channel JFET