1N4728A...

1N4761A
Vishay Telefunken

Silicon Power ZDiodes

Features
D
D
D
D

Very sharp reverse characteristic

Very high stability
Low reverse current level
VZtolerance 5%

Applications
94 9369

Voltage stabilization

Absolute Maximum Ratings

Tj = 25_C
Parameter
Power dissipation
Zcurrent
Junction temperature
Storage temperature range

Test Conditions
Tamb 50C

Type

Symbol
PV
IZ
Tj
Tstg

Value
1
PV/VZ
200
65...+200

Unit
W
mA
C
C

Maximum Thermal Resistance

Tj = 25_C
Parameter
Junction ambient

Test Conditions
l=9.5mm (3/8), TL=constant

Symbol
RthJA

Value
100

Unit
K/W

Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage

Document Number 85587

Rev. 2, 01-Apr-99

Test Conditions
IF=200mA

Type

Symbol
VF

Min

Typ

Max
1.2

Unit
V

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1 (4)

1N4728A...1N4761A
Vishay Telefunken
Type
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A

VZnom 1)
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75

IZT
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3

for

rzjT
< 10
< 10
<9
<9
<8
<7
<5
<2
< 3.5
< 4.0
< 4.5
< 5.0
<7
<8
<9
< 10
< 14
< 16
< 20
< 22
< 23
< 25
< 35
< 40
< 45
< 50
< 60
< 70
< 80
< 95
< 110
< 125
< 150
< 175

rzjk
at
< 400
< 400
< 400
< 400
< 500
< 550
< 600
< 700
< 700
< 700
< 700
< 700
< 700
< 700
< 700
< 100
< 700
< 700
< 750
< 750
< 750
< 750
< 750
< 1000
< 1000
< 1000
< 1000
< 1500
< 1500
< 1500
< 2000
< 2000
< 2000
< 2000

IZK
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0,25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25

IR at VR
< 100
1
< 100
1
< 50
1
< 10
1
< 10
1
< 10
1
< 10
2
< 10
3
< 10
4
< 10
5
< 10
6
< 10
7
< 10
7.6
<5
8.4
<5
9.1
<5
9.9
<5
11.4
<5
12.2
<5
13.7
<5
15.2
<5
16.7
<5
18.2
<5
20.6
<5
22.8
<5
25.1
<5
27.4
<5
29.7
<5
32.7
<5
35.8
<5
38.8
<5
42.6
<5
47.1
<5
51.7
<5
56.0

1)

Based on dcmeasurement at thermal equilibrium while maintaining the

lead temperature (TL) at 30C + 1C, 9.5mm (3/8) from the diode body.

www.vishay.de FaxBack +1-408-970-5600

2 (4)

Document Number 85587

Rev. 2, 01-Apr-99

1N4728A...1N4761A
Vishay Telefunken
Dimensions in mm
Cathode Identification
technical drawings
according to DIN
specifications

94 9368

0.85 max.

2.5 max.

Standard Glass Case

54 B 2 DIN 41880
JEDEC DO 41
Weight max. 0.3 g

Document Number 85587

Rev. 2, 01-Apr-99

26 min.

4.1 max.

26 min.

www.vishay.de FaxBack +1-408-970-5600

3 (4)

1N4728A...1N4761A
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

www.vishay.de FaxBack +1-408-970-5600

4 (4)

Document Number 85587

Rev. 2, 01-Apr-99