UV-B Sensor

GUVB-T11GD-L
Features

Aluminium Gallium Nitride Based Material

Schottky-type Photodiode
Photovoltaic Mode Operation
Good Visible Blindness
High Responsivity & Low Dark Current

Applications

UV-B Lamp Monitoring

Outline Diagrams and Dimensions

UV-B LED Monitoring

Anode

Cathode

Absolute Maximum Ratings

Parameter

Symbol

Min.

Max.

Unit

Storage Temperature

Tst

-40

90

Operating Temperature

Top

-30

85

Reverse Voltage

Vr,, max.

Forward Current

If,max.

Optical Source Power Range

Popt

100m

W/

UVB Lamp

Soldering Temperature

Tsol

260

within 10 sec.

Max.

Unit

Test Conditions

20

Vr = 0.1 V

1.65

UVB Lamp, 1/

0.01

Remark

Notice: apply to us in the case that Optical Source Power is over 100/
Characteristics (at 25)
Parameter

Symbol

Typ.

Min.

Dark Current

Id

Photo Current

Iph

Temperature Coefficient

Itc

0.1

UVB Lamp

Responsivity

0.13

A/W

= 300 , Vr = 0 V

Spectral Detection Range

10% of R

1.5

1.35

220

320

Active area

1.536

Responsivity Curve

Photocurrent along UV Power

Photo current(uA)

30

GUVB-T11GD-L
Test Condition : Vr=0V
Optical Source : UV-B Lamp (306nm)
Photocurrent(nA) = 1.5 X UV-Power

25
20
15
10
5
0

12

15

UV-B Power(mW/cm2)

Caution
ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.