1 Semiconductor Fundamentals How does the density of states vary with energy for 3D bulk semiconductors? Derive . How does the density of states vary with energy for 2D semiconductors? Derive. How does the density of states vary with energy for 1D semiconductors? Derive. 4. How does the density of states vary with energy for 0D (quantum dots) semiconduc- tor . Assuming the electron mobility in Si to be 1000 cm?/Vs calculate the mean free scaterring time of electrons. Assume effective mass to be 0.33mo, with mo being the electron mass in vacuum. 5. Find the mean free time of electrons in the conduction band of a semiconductor whose E-k diagram for the conduction band is defined by E=A+B(k-C)? q@) Here A, B, C are constants. . Find the electron concentration in the conduction band of intrinsic Si at T = 100K. 8. Intrinsic Si is doped with 1 x 10!5/cc Phosphorous atoms. What is the location of the Fermi level with respect to the conduction band edge at T = 300K. Intrinsic Si is doped with 1 x 10'5/cc Phosphorous atoms. What is the electron and hole concentration at T = 300K. Intrinsic Si is doped with 1 x 10"8/ec Phosphorous atoms. If a small low frequency alternating voltage of vin is applied across a block of this doped Si, a current iin, flows through. Find Ovin/Oiin. The block is a cube of side 5 micrometer. 11. Intrinsic Si is doped with 1 x 10°/cc Boron atoms. What is the electron and hole concentration at T = 300K. 12. Intrinsic Si is doped with 1 x 10'5/cc Phosphorous atoms and 2 x 10'/cc Boron storms. What is the location of the Fermi level with respect to the conduction band edge at T — 30017 What is the electron and hole concentration at T’ = 300K? 13. Sits doped with an unknown dopant concentration so that the free electron and hole concentrations at thermal equilibrium at 300K are n and p, respectively. Find inn) + In(p) 14. How does electron mobility y with electric field? Explain the Gunn Effect.