TABLE 4.1 BIT Bias Configurations Type Configuration Pertinent Equations ixed-bias Vee ~ Vee Ry Je = Bla. le = (B+ Vip Vee = Voo~ leRe ly Yoo Var Re + (B+ DRE ln ie = G+ Dlg B+ DRe foe — Hele + Be) Voltage-divider bias — APPROXIMATE: A = 10R; RAR Reo y, yy, po nave = Re Ry Vem Vem Vow OO Rn + B+ DRe le = B+ ly te foc = te Re + Rp) Vee Collector feedback Yoo - Vp ls ia ; ft ; Moc Re Ry 8 Re Yoo Re Ky EXACT: Rn, a & Re Kee «3k a Re Re * Bie + Re) To= Bla.te = (B+ Wy Te(Re + Re) Vee Briterfollower Vos i+ B+ DR Ore = Ven teRe Common base Van = Yar te Re tao gE le Bl Ibm gis yle~ Bly Ver = Ver + Vee te(Re + Re) Ven = Veo ~ lee 193TABLE 5.1 Unloaded BIT Transistor Amplifiers Configuration zi z A, A Fisod-bias Medium (1k) | Medium (2k) | High -200) High (100) ide Veo =| Ruler. =[Rele] |_| @elred BRer. ‘t “ly GF ROR + Br) i: Bre Re Ay iV Re te - = 106r) | str) | =| = ue re (= 1089) ‘Voltage-divider Medium (19) | Medium(@k0) | — High 200) High 60) bias: Vee = [RilRlBre |) =| Relro Relre BIRR) te GF RORIIR: + BD =[Re 7, = 10RE) = | PR RR + Br (= 10Ro) (ro 10RO) ‘Unbypassed High (100%) | Medium 2k2) | — Low (5) High 50) miter bis Yee = [Rl Re] | _|__ Re n+ Re 2% = Blre + Re) | (any evel) RslBRe > 1) Eniter- nigh aooxn) | towe0m) | Lowc=) High (-50) follower: = | RelZs =| Relre _| Re | __ORe A ts = a+ RA a Rtn Re % - =[1 = (ER) gs [) a>) ‘Common-bae Low (202) | Medium (kA) | High 200) Low (1) = [Rel -[Re =i Be 1) Medium (1k) | Medium ka) | High 200) High (50) te RelRe specs Bim || (= 10k = 10R0) Re (ro = 10Re) Ry > Ro) ReTABLE 6.3 Field Eifeet Transistors Symbol and Toe ‘Type Basic Relationships ‘Transfer Curve and Capacitance SET (echanned) gxvaute R,> 1ooMa C0 = 10) pF MOSFET depletion type (channel) R> 100 Gi — 1 pF MOSFET enhancement type (channel) eee > 100 C0 — 10) pF To= kos Vaso? Yes es MESFET depletion type 120A. n=l (channel) S @ R> 0D . C= pF MESFET enhancement ype > (channel) | ee eee R> 0D Kos Vos Gi = RF ay eo Wsea= Vos? Yerm Yasin YesTABLE 7.1 FET Bias Configurations Tyee Pertinent Equations ‘Graphical Solution ‘e oe ser Yas, = “Yoo Ficed-bias Vos = Voo ~ tae rer Ves = ~foks seutbias Vos = Voo ~ tlt + RO Von oe Vas = Vo ~ fos Vos = Voo = Ielfin * Ro) mer Ves = Var ~ fos Comon-gte ' Vos = Voo + Vas ~ Inly + Ro) a0 — n = 09) is ae Var, = 0 Spec Voss Wes, = 0) Le og = lass Depletion ype MOSFET Mest tes 7 (ood MESFETS) 3 Depleton-ype Rivoo MOSFET 5 Aiton RR Votagedvider an +R tS in, Vas = Ve ~ Ios cou nesrery Vos = Voo ~ tllip + Rs) Enhancement ‘ype MOSFET Feedback configuration (od MESFETS) Enhancement ‘ype MOSFET yp = Boo Voliage-ivider om ak hae Vos = Vo ~ lots ony (4nd MESFET) atoms Ya FaTABLE 8.1 ZZ and A, for various FET configurations Configuration z Z Fed bas (ORE or D-MosFET] Medium (2k2) Medium 10) RD cy High (10MQ) « 2 - [ola ~snal Ro) Dao Ro % Ro = | BW | yon be coats ; Te 4 Sains bypased Re UHET or D-MostET] . ‘Medium (2k) Medium (—10) te gf) | mskuomn i . olla = [Fanta ‘i U [#e] Art = BO] ons Teoh] ane Sane tnypased Re UREF orD.MosrEr) Low 2) [ts sats + lap High (10 MQ) = Soko sencromy Rot Rs Lt BWR + te =[% a, © LH ens Ineeso meena ‘orage-dvder tas UORET orb-MOSHET] Medium (22) Metin 10) , Beg P| mauoma . ve ; = [pol = Emtraleo Do — Files - z Ro] cane =H | eames de ns kc, 4