Mos TMS 2516-25 JL, TMS 2516-35 JL AND TMS 2516-45 JL ts! 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES DECEMBER 1979-REVISED MAY 1982 © Organization... 2048 X 8 © Single +5 V Power Supply SoniaicLine PACKAGE © Pin Compatible with Existing ROMs and (TOP VIEW) EPROMs (16K, 32K, and 64K) y oc © JEDEC Standard Pinout aS © All Inputs/Outputs Fully TTL Compatible a9 © Static Operation (No Clocks, No Refresh) ve. ‘© Max Access/Min Cycle Time So — TMs 2516-25... 250 ns - TMS 2516-35... 350 ns poe - TMS 2516-45... 450 ns os © 8-Bit Output for Use in Microprocessor-Based or Systems oe os © N-Channel Silicon-Gate Technology 3 © 3-State Output Buffers aod PIN NOMENCLATURE = Active... . 285 mW Typical ‘Address inputs = Standby . . . 50 mW Typical Chip Select ty wit >o/eGM Power Down Program © Guaranteed DC Noise Immunity with Standard om pare Oe vec 48 V Power Supply © No Pull-Up Resistors Required vee 425 V Power Supply vss 0V Ground ion ‘The TMS 2516 series are 16,384-bit, ultraviolet-light erasable, electrically programmable read-only memories. These devices are fabricated using N-channel silicon-gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of ex- ternal pull-up resistors, and each output can drive one Series 74 TTL circuit without external resistors. The data out. puts are three-state for connecting multiple devices to a common bus. The TMS 2516 is plug-in compatible with the TMS 4016 16K static RAM. It is offered in a dualin-line cerpak packege (JL suffix) rated for operation from 0°C to 70°C. Since these EPROMSs operate from a single +5 V supply (in the read mode), they are ideal for use in microprocessor systems. One other (+25 V) supply is needed for programming but all programming signals are TTL level, requiring @ single 50-ms pulse. For programming outside of the system, existing EPROM programmers can be used. Locations may be programmed singly, in blocks, or at random. Total programming time for all bits is 100 seconds. Texas INSTRUMENTS POST OFFICE 80x 725012 © DALLAS, TEXAS 75265, 137138 TMS 2516-25 JL, TMS 2516-35 JL AND TMS 2516-45 JL 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES —_———————— operation FUNCTION On a ‘Ste Inhibit Pre —S rout a : corm oe Red Power Down Programming Programming Verification oTrGM va one vn Pale Vik vit vic 08) care Vm cy van |v Dont 77 vm vie (20) care Vee 7 wv wv TEV TEV cy en lores) Veo 7 7 70 ev 7 = TeulCS) Chip-slect setup time > = ‘sy(D) Data setup time — = = TsulVPP) Setup time from Vp 5 = tnial Address hold time ; 3 tnicsh Ghipsselect nota wine > = TID) Data hard time = = NOTES: 4, For all switching characteristics and timing measur nents, input pulse levels are 0.65 V to 2.2 V and Vpp = 25.V + 1/V during rogramming. All AC and OC measurements are made at 10% and 90% points with « SO% pattern 5. Common test conditions apply for taig CX¢eDE during programming. For ty(A}. tales) 298 fois, PD/PGM = CE = Vy, PARAMETER MEASUREMENT INFORMATION v2.09. RU-78082 oureut UNDER TEST Ta FIGURE 1 — TYPICAL OUTPUT LOAD CIRCUIT TEXAS INSTRUMENTS 141 POST OFFICE 80x 726012 © DALLASTMS 2516-25 JL, TMS 2516-35 JL AND TMS 2516-45 JL 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES —————————————<@$@oOoue—i i —— read cycle timing b@-—$ tr) ——___ 1 vin IOIUOY xx % SARK) AXXO KAS sone” EXC i i a i ' my es ! if vie 1 i I 1 1 vin . ! Po/PGM ' | 1 oy | i ! va i + ieee —Shaics) 1H Fe tisics) am hea ates ee EY vou Oy standby mode vin ‘ADDRESSES ADDRESS N ADDRESS N+ va vm ' vu 1 " ‘istPRD | teeny | You 01-08 VALID mez VALID Vou! NOTE: GS must be in tow state during Active Mods, “Don't Care” otherwise, *tqiPr) referenced to PD/PGM or the addres, whichever occurs last. All timing reference points in this data sheet (inputs and outputs) are 90% points. ere 142 TEXAS INSTRUMENTS POST OFFICE BOX 25012 # DALLAS, TEXAS 7265,TMS 2516-25 JL, TMS 2516-35 JL AND TMS 2516-45 JL 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES Program cycle timing i+ —— rrocram ————el —__ *ocnam _.t { i veRiry vin “meses {cm ea 1 Nem vie ; i 1 fea ca —| tice] ey fe cate 1 | | l twine! 1! rorren vo | | i \ Lees | / “ went be | OT i I T ' \ 1 1 1 1 ' Vow/Vin a1 - a8 DATA OUT DATAIN zg DATA our VouMiL: KKK __ se TEXAS INSTRUMENTS 143 POST OFFICE Rox 28012 © DALLAS TEXAS 25248TMS 2516-25 JL, TMS 2516-35 JL AND TMS 2516-45 JL 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES typical device characteristics (read mode) ‘Tws 2516.45 ‘Tws 2516.35, ‘TMs 2516.25 Ig CURRENT ‘TEMPERATURE Toca ACTIVE CURRENT PorPam= vi, Vec=5v tecimad 8 8 8 8 8 oct STANOBY CURRENT] PO/PGM= Vin tobe veo=5v 0 10 2 30 4 50 60 70 TEMPERATURE (°C) TMS 2516-45, TMS 2516-35 TMs 2516-25 ACCESS TIME ‘TEMPERATURE 3 Eee tale 388 8 8 0 10 2 0 4 50 60 70 TEMPERATURE (°C) 144 TEXAS INSTRUMENTS