Moouie-2 Semconcucor Power Devices, hoe Characters ae Ratings MODULE.2 SEMICONDUCTOR POWER DEVICES- CHARACTERISTICS AND RATINGS, Introduction liscused in tis module wl provide & fat ha inforration Powe: semiconductor devices described inthis model nclace the following sharers: (© Volage crop in the device when caning cure; (9 Capabtiy of the device in handing caret, i) Capability ofthe device in blocking vohage (is) Masinum rate of rise of caret which the device can witht (9) The switching speed of the device; (6) The rate at which conducting device can recover is locking capably: (i) The meximum power dissipation which the devie can swithand, and (sl) A good ratio of conoid power and conuoling power {et good power gin of the device ‘This medule will provide det of ratings of import ‘emieonducor power devices andthe suas package Thi ‘ill help you seet cove er various eppiestions. Import evicescesrbe In thls mole are power diodes, tyes, [ower narssars of varius ipes Ike BIT. MOSFET, TRIAC and GTO. The speifcuions and characterises ofa device are of umes inporarce tothe designer of systers aad conel Sauipment for sanfacory performance. For details of Spectfctions and wings we hove to refer io manufactures! be speclfed, This is called nor-epeltve peak caren rang. “The durmtion of the surge i also specifi. (0) Foltage ratings ‘One ofthe most important ratings i the maximum pea inverse voltage. This indicates the maximum repetitive raverse voltage that con be applied to the diode before avalanche breakdown occurs. The types! range is from 100 V to 2500 V fora ingle diode ‘The non-repetitive pesk specifies the withstanding capability of the diade of occasional oversoltge-sng tat may appear scroce de to tome fat in the cea (© Power rating ‘The maximum power dissipation that the device can withstand is specified. The power dissipation is linked with jimetion temperature and cooling characterise. (8) Maximum jetion temperanire tis the maximum temperature at which the junction ode ean operate, The maximum junetion temperature permiued is 200°. “Terms Used in Specifying Diode Ratings Vy, = Forward votge V, = Reverse volage = Repative peak reverse voage Igey™ Average forward caren, rectified curert r= Case temperature = Maximum forward veluge crop = Surge forward cure, nonseptitve = Maximum forward curert Reverse recovery time Forward current = Reverse leakage curent Fervard voltige drop, st a specified I, and 7, ‘ection temperature % 1, Funcereras Power Elbevenes‘Semiconductor Power Daven, tei Charcanites and ings In edition tothe above ratings, an imporantparamcicr that desides the selection of power diode for sutic ower coaverier application i is reverse recovery time", A lode, once stats conducting needs some time afer the forward ‘conduction has stopped before it i able to recover its ably to block reverse voltages. Datasheet for some power diodes are included as ‘allows ‘Table 2.1 Data Show of typssl power diodee (@) Power Diodes Standard Recovery Nae von in er Yin 1S0K104 » we 0 13 1508204 we 9 3 10304 > we 19 19 10004 ” 10 1s 13 10x04 10 1s ey ssoxst0 0 10 1s 3 ssoxsz0 a wo is 1 ssoxsee * 10 1s 1 1soKso0 ey v0 19 1 ss9veeen @ 10 a ur | ss0v0ee on 10 i | 1s0vr00D 100, 10 135 war seavize0 m0 16 ns ur asuin wo 10 1 1 sine 2» 16 9 1 sian ~” 1 9 1 ssusn oo 16 13 (© Power Diodes Fast Racvery — vw |e | ot You Te wre | me pews ae |e wre | ae | 0 6 i » wermes | im | 0 bs 1s ~” nruiwses | ae | 1 “ 0 eruiwses | oe | 1 “ om aerrie ar) ” rt oy ROETFICs ow | > ” 1 Funcameras of Power ElocvericsmMoouLe (© Power 2 Semicon Power Deve, tr Chassis an Regs [Tame Vio te on Vou Tw ] asvutioosie | ao | 20 * vm wo | | socerso wo |» » ui “ sorrri w | 0 % uw “ | socee> wo | © ws us 40 aunties | a | * vs x0 | ecerio | tt @ 3 uu “0 en o 5 uu “0 se. 10805 100 6 v0 u © ronruimosss | om | s us » socreio wo | © 2 was ey ssurti0ses | 1 | os 1% us Pay sewrnes 100 : “ 2 © Diodes Hyper Fat Rewvery Nae Vo hae Ye Tu 1sErH08 o ® zm » isernce1 o 8 2 8 sscruverr oo s 2 51 services o fs 2 ra seri a s los ve 1seri061 @ s as ve sserv0sre © s vas v0 sser106s ow s vos v0 ser an 's us u Ise1x061 oo » 1s 0 ssernoser @ 6 us u Wer a » a ” Swern on ” a * Soerwess o » au * errs o * a x» seme o ‘ au » server o . a " sermus @ 8 a » Fundanenas of Power BecronicsSemiconductor Power Devices, heir Charator MoDULE-2 NAME, Vows Te Vow | — oo : 1 | SETLOG-L 600 8 105 10, | vere o ' ts * SET LOGS 00, . 105 190, } SETNDO-1 600 ‘ 8 6 | tober @ : ; sersus os ‘ : ws 213 Diode Characteristics ‘The charactrsie of a diode can be studied under wo iypes, viz, static ‘characteristics, and dynamic charctriice. These ae describe briefly as follows. Satie characterises rela to pericds when the diode is in condting mode whereas dynamic characterises relate (0 is switching periods (uring ansition from ON to OFF of vice versa) Ze, during both being ON and OFF. (@) State Charoctriaier The following ere some inpertan! static characterises of « power diode: (0) Forward and reverse characterises of 2 silicon diode We have soon in Figure 2.16) a typical vok-ampore (V1) sharscteristic of a diode. The VI charscteristice depend fom operating terperatire as has been shown in Figure 2.2 2. charter of de 1 eee tempers (i) Forward volage drop Fernard voltage drop in a dieds is specific ata given current and ic prevded inthe foon of «gzeph. A sicon rectifier normally requires a forward voltage drop of D4 t> (O¥ volt before some curve’ warts flowing. This volge ‘rap is dependent on temperature and impurty level ofthe ype and naype mater, (il) Reverse leakage curent ‘This depends on reverse vokage and therefore specitid against reverse vole and temperature (is) Junetion to easing thermal rvitnce Tis fs specified in tenms of degree centigrade per wat Indicating the diference in emperatire between the junction tnd the ease when the rectifier iz csspeing power () Poner dissipation The product of forward voltage drop and current is ven in the for of 8 graph (0) Dynamic Charactersies ‘As montoned eutisr, dynamic characterises of @ diode rela to duration of switching-ON end switching OFF periods. ‘When a diode rectifier i switched ON, takes lime forthe minority caries to low across te juetions and thereby prepare the diode to cary fll lead curent (ermember that curert through & retifer is da to bot Ingjority and minority carries). This forward torn-on time although very small glves sew large power dsspation at the jtion hick for high frequency operations may become significant. Manufttarers dat sheet specifies this forward deloy time Fundamental of Poner ElectronicsoDULE +2 ‘Semiconducor Power Devices, ter Characters ana ategs ‘The reverse recovery time isthe time required for the diode to regain ts ability block reverse vol immedinely ater the switching off operation of te de. The reverse recovery me ofthe rectifier die i several ies higher ‘han the forvard turr-on tne. Fee this teaser, the power Alisipaon during tuning OFF is quit high Reverse rosenery time of a rectifier diode should derefore be as stall as possible. ‘At low frequency and low curonts« particular diode nay work prfecily. But when subjected t high frecuency and high current operations, the recovery transients. wil lay an important roe ireeasing the power ess and giving Fise to voltage spikes which may damage the device i precttons are not taken 24 “Types of Power Diodes Reverse recovery tie is the factor, whieh detemings the |ypes of power dines. Ideals, there should rot be any reverse recovery time fora dioce. I shoald instantaneously sin roverse voltage blocking capability afer operating on 2 conducting mode. However, manufacturing of Such cea fiode becomes quite costy. For certain applications, however, small valve of reverse recovery te does 3. pose serious problems and as such oatnary éindes canbe ted. These are called Goneral Purpote Diodes. Other categories of diodes are Fast Rozovery Type and Schotly Type. “Thus, we Have treo categories of power diodes, viz General Purpose Diodes, Fast Recovery Diodes, and Schothy Diodes ‘General purpose rectifier diodes have reverst recovery ime near about twenty-five microseconds, Ther curent ratings range from less thin one ampere to thousands of amperes, Voage ratings range fiom around 50 vols to 5000 vos Firs recovery diodes have reverse recovery sine of tess than fire miroseconds. They ae used in é. 0 de, tnd de: to ac, converters whet fast recovery is essential Curent and voiage ranges are one arpere to hundreds of tmperes and SO vol to 3000 vols, respectively The Sehorty barr lode or simply Schotky diode is sumetal-semicenetor device, Unlike ap junction foes between two semiconducting material, In Schotky code junction ie formed between & meta such = chromium, Dlhvinum, tungsten or molykdenam and an maype silieae Frater. The contact i charsctersed by’ lenge potenti Sarrier for electro flow from the metal (anode) t0 the semicondscter (cathode) Ina Schotky diode, only electrons fin the conduction mechanism since there Is no rniovity carer in a metal The charge storage problem at the junction due 0 minor carter is overcome and the recovery tine i reduced. I willbe intresting to ne the Inajordiferences between apo junction diode and 2 metal, semiconavctar junction diode (sehottey). The major ciffeences are (9 In pon junction died te reverse bas leakage ue rent isthe resuk of minority eaters diffesing into ‘the juetion end erosing itm a Schotcy dace the reverse curet is due to majonty carrer that are able to overcome the barrier. This leakage current i higher than tht in a pn junction dieda Since very minimal minor eater can get accom ‘modated atthe semiconductor junction, Sehortky rer code is able to return very fast fer conde tonto reverse Bloking sage Gi) The main imitaion of Scotty diode is that ts re verse vollage is low. At higher value of reverse vlt- age the leakage current ncretes aa high ie, making the deviee working as 2 typical resistance in the re= verse direction, beyond the voltage limit. Power Scotty dides ae available upto fervard current of 100 arnperes and a low reverse voltage of 30 to 10D volt, 2.15 Use of Saubber Cireuts ‘When a conducting diode is switched OFF, ideally, curert ow throwgh i shoul! be zero and the junction should regain is capably to Block any reverse erent flow. But practically when 2 diode circuit switched OFF, because of excess minority carers the diode continues to conduct row in the reverse direction, Duting the reverse curert flow, the excess minority carries are pushed back across the pom junction ard thus the diode continues 10 remain conducting unt the carirs are removed. Aer a lapse of time the current falls 12 2er and the diode recovers itt ably to block revere voltage, ey Funcaaials of Power lactonesSemicerductor Power Oevens, to Chatacorstes and Fanos mooue-2 A diode is generally connected in a ereuit having resistance, inductance, capacitance, ete. Presence of Indctares in the circuit would cause 2 vitae spike to appear across the diode during the decay inthe reverse ferent flow through the diode. The mognitde of such ‘over voage spies will depond upon the valve of inductance, Land the mate of change reverse current Le. di [A anes circa for a code serves a pretecton ‘stem fiom its damage that may happen duc t2 over ‘oltage spikes during rovers voltage recovery. A simple nubber circuit connectol cero « diode of a civuit hes ‘ben shown in figure 23. The saubber circuit consists of a resistance, Rand a capacitor, C connected in series ‘across the Giode. Any energy stored in the inductance of the circle dve to reverse recovery curent is wilised in ‘harping the capacitor thereby reducing the excessive vols: spike 10 appear acres the dloce 2.14 Series Parallel Operations of Diodes In many applications like ia high velige ds. (HVDC) transmission, one diode cannet mest the ruled volage rating of he system. A numberof diedss of sila ratings ‘are connected i series in Sich eas, HuL when & number ‘of diode are connect in eres they most equally stare he revere volige, Diodes of same mings me shoson, such tha there may aot be some differences in them in heir haraccrsics resulting unequal weverse yotage sharing However. de to manufacturing defects some difrenc ight ‘est between diodes of same mings but manufictired in ‘iret batches. To avoid ny ference in shar of reverse Nolinge, resistances of equal and appropiate values ae annectd in parallel to the dies a8 shown ip Figure 24 (a), Ite resiseance values are propel chosen with respect to the diode resistance, he voltage dlsribuion wil be fgovered by the ext rsisunces 9 connected, Famer, die to any dierence inthe reverse recovery time ofthe codes. thee may De Some cifculies in tbe sharing of total reverse vollge. The diede with shortest recovery time amongst the diodes connected in series wil have 10 withstand the total ever veliage until the next ‘one recover ad s0 on, o ald this to happen, in adltion to resistances, capacitances are connected in parallel wit the diodes as has been shown in Figure 2.4 (b) Reverse voltage buildup across a particular diode with factor recovery time wil he dlaye due the charging of the parallel connectec capacitors. This deby will provide sometime fort ther diodes o regain the reverse voltage ‘Mocking cspebily ” Fig. 44 Arango fe etal dsb of reese "ele ner somite ices “There isa fnit 10 the curren carrying capacity of a single power éiace manwfachred. When the requirement of a high current capatily, 2 number of diodes of = pants pe and avilable tings ae connected in parallel. ‘When diodes are connected in parallel, the requiremee i that they should properly shire the tal system curren. When éiodes are connected in paral, volage across them bing equal. their curent sharing wil be determined by the foraaré cure chareterstix a invidal codes. I's, therfore, alviable to choose diodes having equal forward voltage dice, 2.17 Junction Structure and Packaging of Diodes Generally, 2 diode is fabricated by difusing paype impurity atoms ito one side off miype exystal water of slicen ‘Soya ede ew slcon pellet (sll able) ith single pn junction. A diode has two terminal. Anode mckes Contct with the p-side surface ofthe pellet ond the eathode fn the sie, The cure! rating of «de is proportional to the ie of he pellet wed. Tove you an idea anc ‘ameter pellet will have current caring capacty of over 1000 amperes Fundamenta of Powe: lesionsMoDuLE-2 Semiconductor Power Devies ths Characters and Ratings nate sie (@) Sta pe diode A Coie Fig 28 (0) Discos puckae Pw, un exer 24 1 Nae the dren pes of power dikes 2. What ic meat by ree recente fa dé 3: pany is in ae at ey Sea ih 4, What re he eit f Seba ite! 4 Sate the min difeence bewers pr jenton dines ond Sehohy dite 6 What ste the problems of pale end sees caeston of dade? 7. Whats me by revene reaver ie of» ae? 1 What ree tpt speciteans a pone se? 9. Lit the chastise fs pace oad ise de 10. Draw he fred and reverie chat of an il dee “There are two types of packages (casings) commonly sed for housing the diode pall, namely ed type or dise ‘ype as shown in figure 2a) and (b) In sud type packaging, the metal casing andthe suc ‘onsite one terminal ofthe cio. The ater terminalis bought out onthe apposite side ofthe treaded sido of the stad Diodes with very large current and votge ratings ase the dise package at shown in Figure. (@). In dise packaging, co metal surfaces are separated by & ceramic insulator Unit Summary In this unit we have discussed the characteristic and specifications of power diode. The most important ‘har hasbeen menos sthe maximum peak verse voage fora power diode. Data set for ypical power diodes has ska been presented. The forward valtage drop of power diode varies from 0.40 0.8 volts, Reverse recovery time is another impriant term used Tor diodes which isthe time taken by adode, ater is swiched of regain ts reverse Docking caabiy. Various types of power dies, namely general purpose, ast recovery type, and scheiky type have been discussed. Uso of snubbe eieutthtpotets the ode from damage which may occur duc to over voltage spikes has been explained. A snubper circuit is a R-C eieuit connected cross diode to be protected. Serie paallal cormestionsand packaging of diodes have alo been ducued 1 TreetFabe ge (0 Power hes canbe asd a ie lich or mes snpticains. TF (2) Power de is «contol ith vr (8) Aponte wean cae ew oe ™ = TF (ie ets dts dea cee TE (0) Ae oes eee snl mea. (0 Lage comet in dk nutes TF (oe vk ic incre seven! time 4 dde Fundamentals of Power BectonSemicordactor Power Devices, thor Characeisscs ard Ratings (sid An en dig onters 20 resitaace in the fora (is) The rags of dade is wala athe aunties dacs set, 7 (9) A dau sheet provices maximum curent rating Cexrsponitg sadfed teapot TF (8) Covent rating of dike is inverse propria! 0 (6) Lage caput dads a be poctd by apc spe of ning fs. oF (oi) Pov dines a avadabe a vohage rang fa Agha 2500 vi 7 (sn) The maximum acon tempore rnd shu be pt ele 20 v (69) Adie once sae contuctng nad sone tine arte vend vendectn bas tape t eer abit 0 nc rene vole UF (6) Charcerites of cde scored inde ire es sme ste, dye. aed amen cndiens. UF xv The frat weg ap Of ean ed ss an Te oF (sit) Reve rower ine the ine eid forthe dnd to regan testy to Boek reverse volupe bebe the ‘nde fe sweet ON of (0 Fit eon diodes have rover tne ala few ‘ecande (i) Fit women dlodes ate wed sos (Gi) fem Setotey ede the revere current it of sehothy diode is is tow (io) Mein (6) A die can be protect apt ove vas ies by sing (08 Tao pes of Fae for ade we x (ni) When en igh volgen care’ cpa odes ae not avsinbles a mime of ode eve be eet fs (i A single suber cosas nt (9 Thaw we ps of ver tes (x) Fonwan and mene chances af power dine eee ty [siaane fr his ec, reuied i aaiebie tthe nd ie mote Funaamenias of Power Elecionts 38