W

GTO ThyristorDiode o

DiacTriac o

UJT o

MOSFETBJT
o
IGBT

K
WThyristor J

semiconductors

General Electrics
--

Anode (A)
WK

KE JF Gate (G) Cathode (K)

Gate

(G)
Anode

(A)

G
A

Cathode

(K)
P

N
J1

P
J2

N
J3

WE JF

KSilicon Controlled Rectifier (SCR)

KON state

WStates of a thyristor J J
Forward biased stateW

KReverse biased state

KEFK

WStatic Characteristic of a thyristor J J

--

EF

K
J2J3J1

Forward leakage currentK

OAFForward Blocking (off) state

KEE JF

J2Forward Breakdown Voltage

KEE JFBCF On State

J2

Holding IH

Kcurrent

E
F

KJ3J1J2

Reverse leakage current

KEE JFODF

Avalanche

KEE JFDEF

--

+IA

IG1>IG0
IG2>IG1
B

IH
-VAK

VRB
D

IG0=0

+VAK
VFB

A
O

-IA

WE JF

WIdeal characteristic of a thyristor J J

EF

KEE JFOAF

K
EE JFOCF

KEE JFOBF

--

IA

C
O

WE JF

VAK

W J J
W

K J
J
K J
K J
KEF J
K J

Gate Turn-Off Thyristor (GTO) J

EF

GTO

(UPS)
K
--

EF
F

KE

K(SCR)

K(VAK)

E JF
(A)
E JFE JF(G)(K)

(VK)(VA)

KKEFIH

EFEF

EFEFWE JF
--

J J

E JF

(+IG)
(-IG)

(+IG)

E FK

KIH

WE JF

KK

E JF

K
--

E JF(Snubber Circuit)
( dv )
dt

WE JF

WTriac J

KE JF

T2T1T2T1
KT2G

T1T2T1T2
KT1G

--

T1

T2

Terminal
(T1)

()

Gate

(G)

G1

P
T2

G2

Terminal
(T2)

A2
()

K1

K2

T1

A1

()

EFEFEFWE JF

KE JF

AC Switch

K dc switch

--

IG1>IG0
IG2>IG1
-VB

IG0=0

IH
O

V
VB

WE JF

WDiac J
W

T2T1T2T1

T1T2T1T2
K

KE JF

- -

T2

T1

()

Terminal
(T1)

Terminal
(T2)

()

EFEFWE JF

E JF

K IG
K

W J

E
F

NPN

PNP

W
KBJT J

KMOSFETKF J
KIGBT J
- -

IBR
V
O

VB0

WE JF

WBipolar Junction Transistor (BJT) J J

PNPNPN

NPN

KPNP

KNPNE JF

KBJT

(E)(C) (B)

K(E)(C)

(E)(C)

EF(E)(B)
- -

K
K

EFEF

EFEFWE JF

W J J J

IC

IB VCE

KE JF

E JF

Cutoff J

KSaturation J

KActive region J

- -

WE JF

(IB=0)

(IC)

EF IB

E JF

20 VVCE

AC

- -

K
K

E JF

VCE

VCE
K

WE JF
MOSFETEF J J

EF

KE100KHzFEF

- -

KPWM

P N

N E JFK

KD DS G

VGVS

VSVDEF

VGS VGS
K

N E JF

E F

BJT

BJT

BJT (Losses)

K 4VVDS
- -

W J J J

E JF

IDEFVDS

KVGS

VGSE JF

EFK

2VVTHVGS

K4V

VGSK

KIDVGSID
IDVGSKVGS

KIDSS

VDS

ID K

JFVGSKID

EF E

VGS

VDS
VTH

IDBVDSS
KBVDSS VDS

KVGS> VTH

- -

WE JF
ID

ID VDS

ID VGS

VDS *IDVDS
KEF

EF

ID

VDS
RDS (ON )

V DS ( ON )
ID

0.5

10VVGS
K20V

- -

Insulated Gate Bipolar Transistor J J

(IGBTS)

IGBTs

CM1000HA

K1000A1400V

K10V

N E JF

G (E)(C)

(C)

(E)

EF

- -

E JF

J J J

VCE(IC)

E JF
(VGE)

(VGE(TH))

VCE

IC

VCE

E JF
- -

J J J

E JF

VCE

IC =

VS
R

WE JF

- -

W
J

T2T1 J
K J

T2T1 J

K J

K J

K J

K J

E F J

K J

K J

K J

K J

K J

J
K

J

- -