Questions 1-3 refer to the GaAs crystal structure below: L. Given the lattice constant a = 5.65 A, determine the distance between neighboring Ga and As atoms: A. 283A B. 189A C. 5.654 245A B, 3.27A Cheb: ederebigiecan ‘hig {BY AS By g qe 2ask 2. Determine the number density of Ga atoms in the crystal: A. c. D. E. 4.44 x 10 om”? 2.22 x 10” cm” 1.68 x 10" om? 4.44 x 10 om” 2.22 x 10" om® B tote) tones [col > 4 Ca cxtoms [cell 4 z 3 ( Sues = 2,22 x10 ew 3. Name this type of crystal structure: A. Body-centered cubic B, Diamond & Zincblende = D. BE, Simple cubic Monoclinic a oftarrerd Jallice contaming ture sbilbecss't ates, Page 2 of 74, Determine the spacing between the (110) planes in a simple cubic lattice with lattice constant a=SA Besa B. 5/3 Cc. 5v2 D. 5/2 E, 8/3 5. Determine the Miller indices for the plane shown at right, A. (111) (121) C. (442) D. (212) E. (242) i, Ait 6. Give the spacing between atoms in a simple cubic lattice with lattice constant « along the [111] direction. @. V3a B, 2a C. 2a/v3 D. a/V3 . B. a/y2 Liu etirecbor cbicdemee =f aha ta TB Page 3 of 77. Determine the wavelength of a free electron traveling at a velocity v = 0.1e, G@? 024& = doy = Fe B. 0.43 nm : ) c. 0434 ie eee ae Broghic D. 0.12nm prwenx EB. 038A Sieae my (OBI eve Ko = 0.024 nm = cod A 8. ‘The work function of Al is 4.1 eV. Calculate the longest wavelength light at which photoemission of electrons can be observed. A. 633.nm Eeanten 2 WK Lurnetion. B, 532nm C. 256nm () 302nm E488 nm 9. Assume that an electron bound to the nucleus of a one-dimensional atom can be described by the wavefunction y (x)= Aexp(-[x//a,) for —co < x <9, Determine the value of A. A. 2ao B. 2a C. fao/2 eae Sy D. a/2 @ Vivea Nornaaditction conch heen Reta: \[teo! ales Sundae ne an Byw gere > 2 A Be tet! en \ e : 2f-2\y =a : 2a SV om, = | eae a ragesot? A &10, If the maximum spread (i.e. uncertainty) in tansyerse wavevector that can be achieved by the lens of an electron microscope is Ak * 0.01, estimate the size of the smallest spot that the electron beam can be focused if electrons in the beam are accelerated to an energy of 100 keV. Ax4p > bs B) 062K g 39A Ax tak > . ee AXAK > E. 041 nm Bw * 0, 062nm 11. In measuring the transmission of light through a slab of GaAs, you find that the transmission starts to decrease for wavelengths shorter then 873 nm, Calculate the bandgap of GaAs. A. 1.12eV - SSL 14ey CBD Narev eee ee C. 2.20eV D. 0.85 eV E, 31eV Page 5 of 712. Calculate the ratio of the effective mass of band A to that of band B. Q Ev) 0.1 on 05 0 0.08 2 KAY Ele) = oy > os Eactel = Ka oS ep 2 TOE neta 13. Determine the number of quantum states in silicon within 25.9 meV of the conduction band edge. Use 1.08mp as the conduction band effective mass for Si. A. 5.210" em? te): Ons * B. 16x 10m? 9s ale ns C 85 0! om? atk ; D, 1.6.x 10% en? N de @ 21x10" om” = ve ‘i Bu (3 6serosiniteo" Coe futet8t (3) pion)? ¢ = OeOrl nM” 14 at we ael#lo om Page 6 of 714, Assume that the Fermi energy level is 0.35 eV above the valence band energy maximum. At 100 K, estimate the probability that an electron exists at an energy a temperature T E=8,—k?/2. | E-CFE @\ Sete) = re el (Ee- ‘DY. (E,roamey) B. 82x 107 Cc. 32x 107 C we -Ossa/ D. 13x10" c : BE. 50x10" ee fee) & | 15, The probability that a state at F = E, + k1’ is occupied by an electron is equal to the probability that a state at £ = By — kT’ is oceupied by a hole. Using the Boltzmann. approximation, determine the position of the Fermi level relative to E, and By, went ote = (6 2 eter) BP f= +B Gee eae ated ota ttumtar Ep = Eg + Ey : Ep = 2(B, + Ey) eatee D, E./2+ Ey eee Page7 of 7