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INCHANGE Semiconductor
2N5494
DESCRIPTION
Collector-Emitter Sustaining Voltage: VCEO(SUS)= 40V(Min)
Low Saturation Voltage: VCE (sat)= 1V(Max)@IC= 3A
APPLICATIONS
Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
VCBO
VCEV
VCER
PARAMETER
VALUE
UNIT
60
60
50
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
RBE= 100
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current
PC
TJ
Tstg
1.8
W
50
Junction Temperature
Storage Temperature Range
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
2.5
/W
Rth j-a
70
/W
isc websitewww.iscsemi.cn
1
INCHANGE Semiconductor
2N5494
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
40
VCER(SUS)
50
VCEV(SUS)
60
VCE(sat)
1.0
VBE(on)
Base-Emitter On Voltage
IC= 3A ; VCE= 4V
1.5
ICEV
1.0
5.0
mA
ICER
0.5
3.5
mA
IEBO
1.0
mA
hFE
DC Current Gain
IC= 3A ; VCE= 4V
20
Current-GainBandwidth Product
0.8
fT
CONDITIONS
MIN
MAX
UNIT
100
MHz
Switching Times
ton
Turn-On Time
15
Turn-Off Time
isc websitewww.iscsemi.cn
2