IBEE Transactions on Electrical Insulation Vol. 28 No. 1, February 1003 Power Frequency and Impulse Field Calculation around a HV Insulator with Uniform or Nonuniform Surface Pollution S. Chakravorti and P. K. Mukherjee Blecticel Enginering Department, Jndaepar University, Calestta, India ABSTRACT HY outdoor insulators are always subjected to pollution of dif- ferent nature and severity and the performance of a HV insu- lator under polluted conditions is quite different from that un- der pollution-free conditions. The present paper is concerned with the fleld distribution around a post type insulator for dif ferent severities of surface pollution. The capacitive-resistive field distribution around the polluted insulator is ealeulated by a charge simulation method. The fleld calculations are car- ried out for power frequency voltage and also for lightning and switching impulse voltages. The effects of uniform or partial surface pollution and the presence of dry bands on the field dis tribution around a polluted post insulator are studied in detai and are presented. 1. INTRODUCTION V ingulators usually serve as support or spacer of clectrodes with respect to the grounded frames or ground plane, Generally, in practice, HV insulators are rounded by gaseous dielectrics and are stressed be- tween two electrodes. In all the applications, a knowledge of the electric field distribution around the inzulater is vety important for the evaluation of the expected perfor- ‘mance of the ineulator. Moreover, a better understanding. ‘of the behavior ofthe insulators in use is necessary to as sure a high degree of relisbility in operation of the HV stems Mukherjee and Roy [1] calculated the feld diatribu- tion in and around a dise insulator of simple geometry by charge simulation method (CSM) [2]. Subsequently, Khan and Alexander (2) did very accurate charge sim. lation modeling of a practical disc insulator geometry. and Iravani etal [8] applied CSMf for the field calculation around a string of diee insulators of f transmission line in a practical environment. Keana- [Nkusi et al. [6] accurately determined the field distribu- tion around a section of a practical port type insulator bby CSM. However, all these researchers computed the ca- pacitive field distribution under pollution-ree conditions But in outdoor applications, the HV insulator surfaces are exposed to pollution of different nature and severity, [T]. The performance of a HV insulator under pollution- free condition is quite diferent from that under pollut- ed conditions. ‘This is because for a polluted insulator the field distribution is capacitive, capacitive-resstive, or resistive, depending upon the severity of the pollu: tion, while for @ pollution-free insulator the field i pure- ly capacitive, ‘Therefore, itis very important to know the changes in the field distribution around an insulator caused by different severities of surface pollution. Abdel-Salam and Stanek [8,9] computed the field die- tribution around e HV insulator having simple geometry, considering a uniform pollution layer on the insulator aur- face. Singer (10] determined the effect of uniform surface pollution on the field distribution around a porcelain sup- port insulator. ‘The present paper examines the effects of uniform and nonuniform surface pollution onthe field distribution around 0018-9367 83.00 @ 1993 IEEE.“4 Chakravorti et al Power Frequency and Impulse Field Insulator with Pollution ‘2 port-type porcelain insulator. In the present work, the technique proposed by Takuma etal. (1, 12] is employed for the field caleulation including surface resistance by CSM. Since the capacitive.resatve feld distribution is dependent on the frequency and waveform of the applied voltage, the field calculations are carried out not only for power frequency voltage but alo for lightning and switch. ing impulse voltages. The potential distribution and the clectrie stresses for such conditions ate studied in detail In addition tothe effects of uniform surface pollution, the ‘effects of partial surface pollution and alao the effects of the presence of dry bands on the field distribution ate ‘computed under both power frequency and impulse volt- ‘ages and are presented in this paper. ALL OMENSIONS 1H mm Figure Poat-type insulator stresed between tno electrodes. 2. POST-TYPE INSULATOR NHB ingulstor-electrode arrangement under considers tion for field computation is shown in Figure 1. The post insulator is made of porcelain, having a relative per- rittivity of 6. The insulator is surrounded by air and is stressed between a pair of electrodes. The system under study isa two-dielectric, rotationally symmetric configu: ration, The bottom electrode is taken as grounded while the applied voltage to the top electrode is considered to bbe of unity magnitude, The uniform pollution layer is simulated by a uniform surface resistivity along the ineu- lator, while nonuniform surface pollution is simulated by considering different resistivities at different locations on, the insulator surface. The resistivity of the pollution layer is mainly depen. dent upon the type of pollutants, e.g. industrial pollution, ‘marine pollution etc. and the weiness of the pollution layer. Purther, the resistivity of dry pollution layers very high, while the resistivity decreases heavily when the pol- lution layer is wetted (13). Hence, the field calculations are cartied out for different values of surface resistivity, ranging fom 10"? to 10° 0, to simulate different degrees of severity of surface pollution, from low to very heavy pollution 3. SIMULATION TECHNIQUE 1HE algorithm developed for ealevlating the field dis- tribution around the post-type insulator i based on the CSM [2]. Several papers [11,12,14-16] have been published on the analyses of eapsctive-resiative fields. It had been observed (8, 11,12] that CSM is more euted to such problems then other methods of numerical field cal: culation, Since the insulator-electrode assembly isa rotationally symmetsic configuration, ring charges (2}are employed for simulation, Each electrode ie simulated by a ret of ting changes placed within the electrodes. ‘The porcelain-air interface is simulated by two sets of ring charges, one set placed in porcelain and air, respectively. Images of the fictitious ring charges with respect to the ground plane are also considered in the present algorithm. The set of linear equations to be solved for the unknown fictitious changes, under power frequency and impulee voltages, ace obtained from the boundary conditions as given below. ‘These equations are then solved for the unknown fictitious charges. ‘The potential and the electric stresses at any. point can then be ealeulated from the combined elfet of the appropriate fictitious charges. 3.1 POWER FREQUENCY ALGORITHM For poner frequency capacitive-resistive field caleula- tion, complex fictitious charges varying sinusoidally withtime are employed to give the instantaneous feld distribu. 1 in the steady state 1,12). ‘The boundary conditions with the complex quantities are as follows. Diichet’s condition onthe electrode surface 4) = a) where 4(i) is the calculated potential at any point é, and V is the known electrode potential. A bar on a variable represents a complex quantity Potential continuity condition on the dielectric inter face Boi) = $468) @) where the subscripts D and A represent porcelain and Continuity condition of Dy on the dielectric interface Deo(i) ~ Deals) = (8) @ where Dz is the normal component of the electric fux density and o is the surface charge density. In Equation (2) 1_[a-1) 1) 28) = FasTy LRG RED 6) where isthe angular frequency, I the surface resistance ‘and 5 is the surface area. They are given as follows n= [ 6) Sti) = joa (6) where 1 ie the radial coordinate of dl along the surface and p, isthe surface resistivity. 3.2 IMPULSE ALGORITHM For capacitive-resiative field calculation under transient voltages, wo methods had been proposed by Singer (10 ‘and Takuma et a. (11), respectively. Of these two meth: ‘ods, the algorithm proposed in [11] ean be extended read- ily to any transient voltage waveform and hence is used in this paper for impulse feld calculation, In this meth- ‘od {11}, real fictitious charges ate employed and the feld distribution is calculated by dividing the total time spen into short time intervals, Hence, for impulse field caleu- Tation, Equation (1) and (2) can be applied without the Vol. 28 No. 1, February 1903 46 complex treatment. However, Equation (3) is modified as follows Dyp(i)s— Deals =o(i)s at £=Aty (7) where oti = 24 Dr Ai): a4 Y= 5 RG RGD (6) "The subscript 1 represents the time instant ¢ = ty. The unknown charges can be obtained from Equations (1), (2), (7) and (8) at €= Aty. Subsequently, at t = At, + Ale, ofile x RG RU+ 1) where o(i)s is known from the previous time step. Thi iterative sequence gives the capacitive-esstive field die- tribution for the impulse voltages at any time instant ‘The values of At ean be chosen differently for different time steps. However, for simplicity these may be made the same forall the time sepa, 3.3 NATURE OF FIELD DISTRIBUTION From Equations (8) and (4), it is evident that the field is capacitive when the surface charge density @ is low and is resistive when o is high. For intermediate values of o, the field i capacitive-resttive. Again, the value of 1 depends upon the product of frequency and surface re- sintvity ps an given by Bquations (4) and (5). The value of @ decreases with increasing frequency for a given Hence, for low frequency voltages, eg. power frequency voltage, the values of ps for which the field will be ea- pacitive or capacitive-resistive or resistive will be higher, compared to that at high frequency voltages. Since the effective frequency of impulse voltage is much higher than the power frequency, the values of py for ‘which the fld will be capacitive or capacitive-resstive or resistive will be much lower for impulse voltage. Simi 1y, for lightning impulse voltage the corresponding values of py will be lower than thooe for switching impulse volt- age, because the effective frequency of lightaing impulse is higher than that of ewitching impulee voltage Field calculations are carted out to identify the range of g, within which the field distribution changes from capacitive to capacitivesesistive and from capacitive. resistive to resistive for power frequency, lightning and40 Chakravorti et al: Power Frequency and Impulse Field Insulator with Pollution switching impulse voltages, The field distribution for dif. ferent values of py within such identified ranges are de- termined for different types of applied voltages. 4. POWER FREQUENCY FIELD DISTRIBUTION (ompuTarions ate cartied out for sinusoidal 50 He jpplied voltage. ‘The potential distribution and the electri stresses are calculated along the insulator surface from the HV electrode to the ground electrode for uni- form as well as nonuniform surface pollution. The electric stresses are calculated on the ait side of the porcelain- air dielectric interface from the point of view of surface flashover and are presented in a normalized formal, Le V/m/V, for ready reference 10! 9, 4 curve 1 - 10° 5 9 Praia i areas | g j OO ep cited $80 ‘long the insulator surface = Figure 2 Potential distribution along the insulator surface with uniform pollution lnyer under power frequen cy voltage 4.1 EFFECT OF UNIFORM POLLUTION Computations are carried out for different values of i to determine the effect of eeverity of surface pollue tion on the feld distribution around the insulator. From the results of computations, it has been found that for 2 > 10D, the field is capacitive, while for p, < 10°R, i ia resistive. For intermediate values of ps, the field is capacitive-resistive, Figure 2 shows the potential dis- tribution along the insulator surface for the above men- tioned three types of field distribution. Figure 3 shows Resultant stress in V/m/¥ —~ ae ‘Mong the insulator surface = Figure 3. Vasintion of By along the inealator surface with ‘uniform pollution layer under power frequency voltage Table 2. Highest values ofthe stzeses and their location con the invaltor surface for uiform pllotion wn der power frequency voltage Ps | potential | Stress | Highest Yalue| Location] ina distribution in av | in Fig 15.15 3 Ht | capacitive wn 11.78 7 Tesistive | 21.78 7 e109 | capacitive | & 1.83 1 & aar 7 Te 7 P| Resistive |e 545 a 5 7% 1 the variation of the resultant stress Bip along the insu lator surface for capacitive and resistive fields. Table 1 prevents the highest values of Bp, the tangential stress By, the normal stress Ey, and their locations on the in- sulator surface for the three types of field distribut From ‘Table I it can be observed that on the insulator turface the highest values of Eq and Ey occur in the re- tistive field while the highest value of Ey occurs in the capacitive field, It can be observed also that the highestIBEE Transactions on Electrical Insulation values of Bp and By for the resistive field is nearly twice the corresponding values for the capacitive field and these ttreses occur neat the tip of the topmost shed. ‘The normal stress at the insulator surface is respon- ible forthe deporition of the surface charges, while the tangential stres is responsible for the movement of the turface charges in the direction ofthe electrodes. Further, the resultant electric stress adjacent to the insulator tu face is responsible for the production of charged particles by ionization processes. Hence, if the resultant stress is increased, in the region near the electrode, as inthe case of polluted insulators, the production of charged pacti- cles also is increased. It is known that the onset of the tutface fashover of the insulator occurs at a crtical leak- tage current [17]. Hence, a higher Ep near the electrodes will requite lower applied voltage to cause that critical leakage current, resulting in lower withstand voltages in the case of polluted insulators. Hy 3 \ curve 2 ~ Uniform g \ pollution with p, = 10°, \\ Curve 2 ~ pollution free. \ curve 3 - Partial ‘pollution from ¢ to 7, os} Potential in V —= phitthente tet ‘along the insulator surface —~ Figure 4 fect of patil polation on potential dstibu- tion along the intulator surface ender power fre quency voltage 4.2 EFFECT OF PARTIAL POLLUTION For the field calculation with pastial pollution, ps isnot taken constant throughout the intulator surface but considered diferent at different locations. In the present ‘work, in the polluted section ofthe insulator surface 2, taken at 10°, which corresponds to resistive field, while in the pollution-free section py i taken as 1019, which corresponds to capacitive field. Several cases of pactial Vol. 28 No. 1, February 1003 a “3 curve 1 - Partial g pollution from ¢ to 7. £ curve 2 - Uniform e > pollution with, = 10° s pe A i FR et ‘Along the insulator surface > Figures. [ect of partial pollution on variation of By along ‘the insulator sorface under power fequency vlt= fon the naalatr surface for pail pollution under poner fequency voltage Stresses va Polluted one & | & | & HtoT | Highest value] 24.2 Bat Location 7 7 Tite | Highest Value] 15.2 | ie | ie Locatica sf [ou 8 to 2 | Wighest Value! m5 Location 5 CteT | Mghest valu 78 Location 7 TtoTE| Highest Value] zat | 19.2 | 25.05 tok] Location 713 7 18 to 2 surface pollution have been studied and are presented in ‘Table 2. Table 2 shows that if only the top portion of the uppermost petticoat is polluted, ie, from 4 to 7 as shown in Piguee 1, the highest values of Bp and Eq and the48 Chakravorti et al Power Frequency and Impulse Field Insulator with Pollution highest value of Bare slightly lower and nearly 4% high- er, respectively, compared to the corresponding values for resistive field with uniform surface pollution, Such high value of By occurs in the vicinity ofthe live electrode, he location $ of Figure 1. However, the worst case is found to be when the pollution of the section of the insulator surface from C to 7 takes place. ‘Then the highest value ‘of By is more than twice and the highest values of En and By age about 1.6% the corresponding values for the resistive field. Figure 4 showe the potential distribution, for partial pollution of the insulator aurfece from C to 7 in comparison with the capacitive and the resistive po= tential distribution, while Figure 5 shows the variation ‘of Ep along the insulator surface for this case of partial pollution, along with the resistive variation. The results clearly indicate that partial pollution ofthe insulator su. face near the eleczodes is more hartnful to the polluted ingulators than the uniform surface pollution 4.3 EFFECT OF DRY BAND {tin generally recognized that very often failure of pol- luted outdoor inaulatore occurs due to the formation of dry bands in the pollution layer on the insulator surfaces, Gellert ef al, [18} did some work on finite element mod. ling of dry bands on polluted insulators. In the present paper, an attempt has been made to study in detail the effects of the dry bands on the field distribution around a polluted insulator, ‘The dry banc is simulated by a one of very high resistivity on the uniformly polluted surface ‘of a low resistivity insulator. ‘The width of simulated dry bhend can be varied easly by varying the width of the zone of high resistivity. Since a dry band has two edges, the edges towards the live electrode and the ground elec trode are called the ‘leading’ edge and the ‘trailing edge’, respectively. Studies have been carried out for narrow at well as wide dry bands. ‘The effect of locations of ry ‘bands is also studied Table 3 shows the values of Bp and By at the edges and also the percentage of the applied voltage appearing ‘across the narrow (5 mm) dry bands for different locations ofthe dry bands. Table 4 presents similar results for wide dry bands (10 mm) at different locations. The results clearly show that exceptionally high stresses occur at the erdges of the dry bands and that the electric stresses at the edges are dependent on the width of the dry bands. The wider the dry band, the lower are the stresses at the edges of the dry band. It ie alao found that the location of the dry band doce not have a strong influence on the electric stresses at the edges. Table 3 and 4 also show that the potential appearing across the dry band is dependent on the width and the location of the dry band. ‘The wider Table 3 Strona at the edges of 6 mim dry bends under Power frequency voltage, ary band] 2 ot. | Type of] Ragitude in Vial Location} across | stress ary ban ‘eating ee] Trailing eta] 2 a | & 9.8 18.9 q oo 115.3 + a | & 705.5 omy a 1745 a3 ’ wl oe 180.2 88 a 29 BS 8 a7 | 1.8 154 ft 128.2 13 w w | of 12 AS & MBS 48 Table 4 ‘Stress the edgen of 10 mam dey bands under power fequency voltage ary sane] x fot. | type off Magitute in Waar Lecation| across | stress fry band Leading ete Trailing edge zn |& a5 & ray + fe le 7 ry & wa we 7 te | & ws rm) B 3.2 M1 w fam | & 8.7 We & ma BS w |e | & 5B & m9 the dey band, the higher the potential difference across the dry band. Previous researchere, while working on the sromth of the dry bands, had assumed that nearly the ‘entire applied voltage appears across the dry band (18, 18), Bub, from the present study it can be inferred thatIEEE Transactions on Electrical Insulation the growth of the dry band is dependent on ite width and location. Curve 1 - Uniform pollution 10 with P= 1088, curve 2- 5mm dry band at N, location 4. [| As curve 3 ~ simultaneous |S SS"am ary bands at \,, locations 4 and 10, | < 9] Pat paste ey ‘Along the insulator surface —~ Figure 6 fect of dry bands on potential distribation slong the insulator surface under power frequency volt {curve 1- Smm dry band at ‘ location 4, curve 2 - Simultaneous Sam i dry bands at ‘" ocations 4 and 10. Resultant stress in V/m/V 5 3 TH SHE oe te ‘Mong the insulator surface > Figure 7 fect of dry bands on variation of Bx along the inguletor surface under power fequency voltage Studies have also been carried out to determine the ‘effect of simultaneous occurrence of dry bands, ‘The sim- ulation algorithm does not put any limit on the locations Vol. 28 No. 1, February 1903 40 Table 5, Stresses at the edges of simultaneously occuring ‘S mm dey bande under pomer frequency roltage Simul | Ory band] Type Wageitude in Via¥ taneous} Location] stress ory bane Leading ete] Trailing etal 7 | & 106.7 E 16.5 zee . | & at & 28 2 Met a2 & 8.8 2.8 & 8.8 a4 2 | & & 2am ~ | & ra oI & 45 8 - 7 & & vee wo | & 4 Th B 68 a7 2 | & oy a mm 33 zenl om | & ry oT v2 & wu 3. mu | 5 a4 na Bul E Ee ‘or on the number of dry bands tobe simulated simmlta- neously. Hence, fld calculations are carted out with 2 5 or more dry bands occurring simultaneously at differ feat locations. Table 5 shows thin effect of 2 and 3 dry bands. Comparison of Table § with Table 3 shows that the strees at the edges of simultaneously occuring dry bands are lower than those for single dry band, Since itis found that the simultaneous occurrence of dry bands is less onerous for the polluted insulator, the renuts for larger numberof dry bands occurring simultaneously ate not presented inthis paper. Figures 6 and T show the po {ential distribution andthe variation of By along the i-50 sulator surface for a narrow dry band at location 4 of Fig- le Land also for simultaneous occurrence of dry bands at locations 4 and 10 of Figure 1, Figure 6 clearly indicates the percentage of the applied voltage appearing across the dry bands, while Figure 7 vividly shows the much lower clectriestreses at the edges of simultaneously occurring Ary bands compared to a single dry band. 5. IMPULSE FIELD DISTRIBUTION (oMPUTATIONS ate extended to investigate the field distribution around a polluted insulator under both lightning and switching impulse voltages. The impulse voltages are represented by a double exponential wave: form as given below ¥ (4 = Alex(-at) ~ exp(-8)] (an) For a 1,2/50 ye lightning impulee voltage of unity peak ‘magnitude, A, a and b are 1,037, 0.0147 and 2.47, respec. tively, while for « 250/2500 us switching impulse voltage cof unity peak magnitude, these values are 1.0947, 0.00032 and 0.075, For the field eslevlation, the lightning and switching impulse voltages as given by Equation (10) are divided into @ number of suitable discrete time intervals. The time slepe selected for the wavefront and the wave tail fare nat equal but are selected judiciously to give fast but accurate field calculation over the entire time span. As in the case of power frequency field distribution, effects of uniform and nonuniform pollution under impulse voltages, are studied 5.1 EFFECT OF UNIFORM POLLUTION ‘Computations are performed for wide ranging values of 1, vader both lightning and sitehing impulse voltages For lightning impulee voltage it has been found that the field is capacitive for p, > 10%, while the fed in resi. tive for pr < 108. Por intermediate values of ps, the field is capacitiveresistive. Figure 8 shows the capac tive, capacitiveesstive and resistive potential distribu tions along the insulator surface at 2 us under lightning impulse voltage. Similar potential distributions at 240 us Under switehing impulse voltage are shown in Figure 8 Figure 9 shows thatthe eld distribution changes fom pacitive to resistive for gs = 109 to 107 under switch- ing impulse voltage. Figures 10 and 11 show the time Chakravorti et al: Power Frequeney and Impulse Field Insulator with Pollution 29) pried as ef ‘Along the insulator surface = Figure & Potential datibution slong the insulator surface ‘vith uniform ollation layer under lightning im- pal voltage ° curve 1 - 10° 9 2-10° 9 3-108 t= 240 us CTs seh ‘Along the insulator surface Figure 9 Potentil distribation slong the insulator surface with uniform pollution Inger under switching i Pale voltage. variation of By at location § of Figure 1 fo diferent val- ‘ues of p, corresponding to capacitive, capacitive resistive ‘and resistive fields under lightning and ewitching impulse voltage.IEEE Transactions on Electrical Insulation ' ‘ : g & geo a fic an Van i om 30 08 Time in us —= Figure 10. Vasiation of Ex with surface resistivity at lo tion 8 onder ghtning impsee vleage. 12-0} Aina 60 Resultant stress in V/m/V —= od] 300 time in 7006 we Figure 21 Vasiston of Bn with surface resistivity at loca: tion 8 under switching impulse voltage Comparison of Figure 10 with Figure 11 shows that the nature of change of the stresses with py are more or Jess the same for both lightning and switching impulse voltages. Figures 12 and 13 show Bq at some select- ed locations for capacitive field and resistive field under lightning impulse voltage. Figure 13 clesrly shows exces- Vol. 28 No. 1, February 1003 31 99 0 ong A108 o Resultant stress in v/n/v~ ool oo 30 100 Time in We —e Figure 12. By. at some selected locations on the ineulator ssrface for capacitive feld distribution ‘under lightning impulse vltege | 7 s 4160 4 e 8 | conptenceransa= § @ trae S50 od oo 30 "00 tine in le Figure 13. En at some selected locations on the insulator turface for reintiv eld dieteibution under ting impulse rltage. sively high strese near location 7 of Figure 1 fo32 Chakravorti et al: Power Frequency and Impulse Field Insulator with Pollution field, similar to the case of power frequency field. More or less the same peak Bq occurs near location 7 for resistive field under switching impulse voltage also ‘The analyses of the results show that for moderate pol- lution severity, eg. = 1070, the feld is nearly resistive under switching impulse voltage, while it is nearly ca pacitive under lightning impulee voltage. In other words, ‘witching impulse voltage is more harmful tothe polluted insulators compared to lightning impulse voltage. Fur- ther, for low pollution severity, es = 100 the field in nearly resistive for power frequency voltage, while it is, nearly capacitive for both impulse voltages. Hence, pow- cr frequency voltage can be said to be mest harmful to the polluted insulators from the point of view of surface flashover 8 Resultant stress ih v/m/V —= 30 Time in 100 use Figure 16. Bp at tome selected Locations on the inelator surface for partial surface pollution from C to T under lightning impulse voltage. 5.2 EFFECT OF PARTIAL POLLUTION. AAs in the ease of power frequency field, the effects of partial surfece pollution on the field distribution around a polluted ingulator are studied under lightning and switeh- ing impulee voltages. It has been found that the electrie stresses due to partial pollution under the impulse volt. fages ate more or less the same as those for power fre. ‘quency field. Similar to the case of poveer frequency feld, the worst case is found to be the pollution of the insu lator surface from locations C to 7 of Figure 1 and the 7 4 3 5 i oo x0 ‘oo tine in ue = Faw 8 By atthe edges of 6 mm dry band et location 4 fon the insulator surface under Kightning impolse voltage. highest value of Bip occurs near the location 7 of Fig- ure 1. Figure 1d shows Bq at some selected locations un- der lightning impulte voltage for this worst case of partial pollution 5.3 EFFECT OF DRY BAND Studies have also been carted out considering narrow and wide dry bands on the uniformly polluted surface of the insulator under lightning and switching impulse volt- ages. Study of the results of computations shows that the electric stresses at the edges of dry bands due to im- pulse voltages ate slightly higher than thoee due to power frequency voltage under identical conditions and, hence, oes not merit any special attention. Figure 15 shows Ex. at the edges of a narrow (5 mm) dry band at location 4 of Figure I under lightning impulse voltage. This particular case is presented here as thie is found Lo be the worst case fs far as stremes are concerned. 6. CONCLUSIONS ROM the results of computation, the following conclu jone can be artived at.IEEE Transactions on Electrical Insulation 1. The changes of the field distribution from capacitive to capacitive-resistive and from cepacitive-reistive to tesintve oceur within a nazrow range of surface ress. tivity under both power frequency and impulse volt- ages, Resistive field distribution causes unfavorable elect cal sttestes around a polluted insulator, which in turn result in lower withstand voltage For nonuniform sutface pollution, excessively high stremen occur at the junction of two different a resistivities, Partial pollution ofthe insulator surface near the ele trodes caures higher stresses than does uniform polli- ion of the insulator surface Bxtremely high stresses occur at the edges of dry bands and these stresses are mainly dependent upon the width, but not much upon the location, of dry bands. 6, For a given surface resistivity, switching impulse volt- ‘age causes higher stresses than lightning impulse volt- ‘age. However, power frequency voltage of the same amplitude gives rise to the highest stresses. REFERENCES (i) P, K. Mukberjee and C. K. Roy, “Computation of Fields in and Around Ineulatore by Fictitious Point Charges", IBEB ‘rans. Blectr. Insul., Vol. 13, pp. 24-31, 1978, H. Singer, H. Steinbigler and P. Weiss, “A Charge Simulation Method for the Calculation of High Volt- age Fields", IBEE Trans. on PAS, Vol. 93, xp. 1860- 1668, 1974, el (3) M. J. Khan and PH. Alexander, “Charge Simu- lation Modeling of Practical Ineulator Geometries", TEBE Trans. Blectr. Insul., Vol. 17, pp. 325-832, 1982, [4] 2. Hazander, S. Milojkovie, and I. Kanenica, “Nu- metieal Field Caleulation of Insulator Chains for HV Transmission Lines”, paper No. 12.08, 3rd Int. Symp. on HV Bng., Milan, Aug. 1979. (s] M. R. Iravani, M. R. Ragbuveer, "Numerical Com- putation of Potential Distribution Along a Trans- mission Line Insulator Chain", IEEE Trans. Elect. Insul, Vol. 18, pp. 167-170, 1983, (6] S. Kaana-Nkusi, P. H. Alexander, R. Hackam, "Po. tential and Electric Field Distribution at a HV Ineu- lator Shed”, IEEE Trans, Electr. Insul., Vol. 23, pp. 307-317, 1988, [7] P. Clavatie and Y. Procheron, “How to Choose In. sulators for Polluted Areas", IEEE ‘Trans, on PAS, Vol. 92, pp. 1121-1131, 1973 Vol. 28 No. 1, February 1903 83 (8) M. Abdel-Salam and E. K. Stanek, “Optimising Field Stress on HV Insulators”, IEE Trans. Elects Insul., Vol. 22, pp. 47-56, 1987. 9 M. Abdel-Salam and B. K. Stanek, “Field Optimiza- tion of HV Insulators”, IEEE Trans. 1A, Vol. 22, pp. 504-601, 1986 (10) H. Singer, “Impulse Stresses of Conductive Di- electrics", paper no. 11.02, 4th Int. Symp. on HV Eng., Athens, 5-9 Sept, 1983, (01) ‘7. Takuma, and T. Kawamoto, “Field Calculation Including Surface Resistance by Charge Simulation Method”, paper no. 12.01, 3ed Int. Symp. on HV Eng, Milan, 28-31 Aug, 1978. (12) T. Takuma, T, Kawamoto and H. Fujinami, “Charge Simulation Method with Complex Fictitious Charges for Caleulating Capacitive-Resitive Fields”, IEEE ‘Trans. on PAS, Vol. 100, pp. 4865-4672, 1981. [13] K. Cheean, Z. Pobl and ‘T. Kowalak, “Hygrotcopic Properties of Pollutants on HV Insulators”, IEEE ‘Trans. Blectr. Insul., Vol. 24, pp. 107-112, 1989 (14] B, Bachmann, “Models for Computation Mixed Fields with the Charge Method”, paper no. 12.05, rd Int, Symp. on HV Eng, Milan, 28-31 Aug., 1979, (15] 0. W, Andersen, “Finite Element Solution of Com- plex Potential Electric Fields", IEEE Trans. on PAS, Vol. 86, pp. 1156-1161, 1977. {16} A. DiNapoli and C. Masretti, “Electrostatic and Electromagnetic Field Computation for the HV Re- sitive Divider”, IEEE ‘Trans, on PAS, Vol. 98, pp. 197-206, 1979. (17] M.S. Risk and R. Hackam, “Performance Improve. ‘ment of Insulators in a Gas Insulated System”, IEEE ‘Trans. Blectr. Insul., Vol. 22, pp. 439-446, 1987. [18] B. C. Gellert ond J. K, Rasmussen, “Finite Element Modeling of Dry Zone Formation on Polluted Out- door High Voltage Insulators”, paper no. 24.07, 6th Int. Symp. on HV Eng., New Orleans, 28 Aug-sept, 1989. [U9] J. 0, Loberg and E. C. Selthause, “Dry Band Growth on Polluted Insulations”, IBEE Trans. Blee- tr, Inul., Vol. 6, pp. 138-141, 1971. ‘Manuscript was received on I Mey 1992, in revised form 30, ‘August 1992,