CdS PHOTOCONDUCTIVE CELLS GL5528 ‘A Epoxy encapsulated A Quick response A Small size Cea A High sensitivity | ERB ‘A Reliable performance a A Good characteristic of spectrum Light Resistance at 10Lux (at25C) 8 --20KQ Outline Dark Resistance at 0 Lux 4.0MQ(min) 3622 Gamma value at 100-10Lux a7 43202 2 Power Dissipation(at 25°C) 100mW on Max Voltage (at 25°C) 150V | g Spectral Response peak (at 25°C) 540nm a u' 8 5 ‘Ambient Temperature Range - 30-4700 . ; Mluminance Vs. Photo Resistance Measuring Conditions 1. Light Resistance oy measured at 10 lux with standard light A(2854K color temperature) and 2h pre-ilumination at 400-600 lux prior to testing 2. Dark Resistance: measured 10 seconds after pulsed 10 lux. 100 3. Gamma Characteristic: between 10 lux and 100 lux and given by log (RIOR100)_ 10) veg t00r10) _ = ‘©9(R10R100) R10, R100 cell resistance at 10 lux and 100 lux The error of Tis #0.1 4, Pmax 1 Max. power dissipation at ambient temperature of 25°C. 1 10 100iux 5. Vmax eetral Response Max. voltage in darkness that may be appli tthe call Spectral Response continuously, © 400 500 600 700 800 900 1000 welength (nm)