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NPN RF Transistor: Symbol Parameter Value Units
NPN RF Transistor: Symbol Parameter Value Units
BF199
NPN RF Transistor
TO-92
Collector-Emitter Voltage
Parameter
Value
25
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
4.0
IC
Collector Current
50
mA
TJ, TSTG
- 55 ~ 150
- Continuous
Units
V
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Parameter
Test Condition
Min.
Max.
Units
V(BR)CEO
IC = 1.0mA, IB = 0
25
V(BR)CBO
Collector-Base BreakdownVoltage
IC = 100A, IE = 0
40
V(BR)EBO
IE = 10A, IC = 0
4.0
ICES
VCE = 30V, IE = 0
V
50
nA
On Characteristics
hFE
DC Current Gain
VCE(sat)
IC = 10mA, IB = 5.0mA
0.2
VBE(sat)
IC = 10mA, IB = 5.0mA
0.92
VBE(on)
Base-Emitter On Voltage
0.925
1100
MHz
0.4
pF
38
Cre
Common-Emitter Ruerse
Transfer Capacitance
Parameter
Total Device Dissipation
Derate above 25C
Max.
350
2.8
Units
mW
mW/C
RJC
125
C/W
RJA
357
C/W
BF199
Package Dimensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
1.27TYP
[1.27 0.20]
0.20
(0.25)
+0.10
0.38 0.05
1.02 0.10
3.86MAX
3.60
+0.10
0.38 0.05
(R2.29)
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
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Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
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Rev. I1