CRL:722

Assignment:1
Last Date for submission: 27/01/2017
A. Third Edition, Physics of Semiconductor Devices, S M Sze and K K Ng
Chapter 3 Metal-Semiconductor Contacts:
Problems: 8,9, 10, 11

B.
1. A Schottky barrier is formed between a metal having work function 4.5eV and p-type Si
(electron affinity = 4eV). The acceptor doping is NA=10 18/cm3. (a) Draw the equilibrium
band diagram showing a numerical value for barrier height. (b) Draw the band diagram with
0.4V forward bias and (c) 2V reverse bias. If the Schottky barrier is formed between the
metal and n-type Si (with ND=1016/cm3), draw the equilibrium energy band diagram to scale.

2. Suppose the dopant concentration inside a semiconductor component of a M-S diode is

linearly graded, i.e. ND(x) = ax.
a) Derive expressions for charge density (x), electric field E(x), electric potential V(x)
and depletion width W(VA) inside the semiconductor. Use the depletion
approximation, i.e. assume that the electron and hole concentrations are 0 within the
depleted region (for 0<x<W) and that the semiconductor is charge-neutral (=0)
outside of the depleted region.
b) Write an expression for the small-signal capacitance of this M-S diode.