PD - 9.

1485B

IRF9Z34N
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating VDSS = -55V
l 175C Operating Temperature
l Fast Switching
RDS(on) = 0.10
l P-Channel G
l Fully Avalanche Rated
Description S
ID = -19A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ -10V -19
ID @ TC = 100C Continuous Drain Current, VGS @ -10V -14 A
IDM Pulsed Drain Current -68
PD @TC = 25C Power Dissipation 68 W
Linear Derating Factor 0.45 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 180 mJ
IAR Avalanche Current -10 A
EAR Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 2.2
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62

8/25/97
IRF9Z34N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 V VGS = 0V, ID = -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient -0.05 V/C Reference to 25C, I D = -1mA
RDS(on) Static Drain-to-Source On-Resistance 0.10 VGS = -10V, ID = -10A
VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS , ID = -250A
gfs Forward Transconductance 4.2 S VDS = 25V, ID = -10A
-25 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
-250 VDS = -44V, VGS = 0V, T J = 150C
Gate-to-Source Forward Leakage 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 35 ID = -10A
Q gs Gate-to-Source Charge 7.9 nC VDS = -44V
Q gd Gate-to-Drain ("Miller") Charge 16 V GS = -10V, See Fig. 6 and 13
t d(on) Turn-On Delay Time 13 VDD = -28V
tr Rise Time 55 I D = -10A
ns
t d(off) Turn-Off Delay Time 30 RG = 13
tf Fall Time 41 RD = 2.6, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 620 VGS = 0V

Coss Output Capacitance 280 pF VDS = -25V
Crss Reverse Transfer Capacitance 140 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

-19
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
-68
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage -1.6 V TJ = 25C, IS = -10A, V GS = 0V

t rr Reverse Recovery Time 54 82 ns TJ = 25C, IF = -10A
Q rr Reverse RecoveryCharge 110 160 nC di/dt = -100A/s
t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25C, L = 3.6mH
RG = 25, IAS = -10A. (See Figure 12)
ISD -10A, di/dt -290A/s, VDD V(BR)DSS ,
TJ 175C
Pulse width 300s; duty cycle 2%.
 IRF9Z34N

100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V

-ID , D ra in -to -S o u rc e C u rre n t (A )

- 7.0V
-ID , D ra in -to -S o u rce C u rre n t (A )

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTT OM - 4. 5V BOTT OM - 4. 5V

10 10

-4 .5V
-4 .5V
2 0 s PU LS E W ID TH 20 s PU LSE W ID TH
T c = 2 5C A TC = 1 75C
1 1 A
0.1 1 10 100 0.1 1 10 100
-VD S , Drain-to-Source Voltage (V) -VD S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = -1 7A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
-I D , D rain -to- S our ce C urr ent ( A )

1.5
T J = 2 5 C
T J = 1 7 5 C
(N o rm a li ze d )

10 1.0

0.5

V DS = -2 5 V
2 0 s P U L S E W ID T H VG S = -10 V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

-VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T em perature (C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF9Z34N

1200 20
V GS = 0 V, f = 1M H z I D = -10 A
C is s = C gs + C gd , Cds SH OR TE D

-V G S , G a te -to -S o u rce V o lta g e (V )

C rss = C gd
1000 V DS = -44 V
C oss = C d s + C gd 16
V DS = -28 V
C , C a p a cita n ce (p F )

800 C is s
12

600 C o ss

8
400
C rs s
4
200

FO R TEST C IR C U IT
SEE F IGU R E 1 3
0 A 0 A
1 10 100 0 10 20 30 40
-VD S , D rain-to-S ource V oltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
-IS D , R e ve rse D ra in C u rre n t (A )

BY R D S(o n)
-I D , D ra in C u rre n t (A )

10 100
T J = 17 5C 1 0s

T J = 25 C

100 s
1 10

1m s

T C = 2 5C
T J = 1 75C 10m s
VG S = 0 V Sin gle Pu lse
0.1 A 1 A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100
-VS D , Source-to-D rain V oltage (V ) -VD S , Drain-to-Source V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF9Z34N
20 RD
VDS

VGS
D.U.T.
15 RG -
ID , Drain Current (A)

+ VDD

-10V
10 Pulse Width 1 s
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

5

td(on) tr t d(off) tf
VGS
10%
0
25 50 75 100 125 150 175
T C , Case Temperature ( C)

90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms

10
(Z thJC )

D = 0.50
1
Thermal Response

0.20

0.10
0.05 PDM
0.1 0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t1
t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9Z34N

500
L ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
VDS
TOP -4 .2A
-7.2 A
RG D .U .T 400 BO TTOM -10 A
VD D
IA S A
- 20V D R IV E R
tp 0 .0 1
300

200
15V

100
Fig 12a. Unclamped Inductive Test Circuit

0 A
25 50 75 100 125 150 175
I AS
Starting TJ , Junction T emperature (C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K
QG 12V .2F
.3F
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF9Z34N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
I SD controlled by Duty Factor "D" VDD
-
D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

[ISD ]
Ripple 5%

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS
IRF9Z34N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
1 0 . 5 4 (. 4 1 5 ) 3 . 7 8 (. 1 4 9 ) -B -
1 0 . 2 9 (. 4 0 5 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A - 1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 . 1 5 ( .0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - G A TE
1 2 3 2 - D R AIN
3 - SO URCE
4 - D R AIN
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 ) 0 . 5 5 (. 0 2 2 )
3 X 0 . 6 9 ( .0 2 7 ) 3X
1 .4 0 (. 0 5 5 ) 0 . 4 6 (. 0 1 8 )
3X
1 .1 5 (. 0 4 5 ) 0 .3 6 (. 0 1 4 ) M B A M 2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E XPLE
E X AM AM PLE
: T:HI TSHIISS AISN AIRF
N 1010
IRF 1010
W ITWH ITAHS SAESMB
S ELY
MB LY A A
LO TLOCO T DE
CO DE 9B 1M
9B 1M INRTE
IN TE NARTNAIONT ION
AL AL P A RT
P A RT NU
NU M BEMRBE R
R ECRTEC T IF IER
IF IER IR F IR F 1010
1010
LO GOLO GO 9246
9246
9B 9B1M 1M D A TE
D A TE C ODCEOD E
A S SAEM
S SBEMLYB LY
(Y YW W ) W )
(Y YW
LO T
LO T CO DE CO DE
Y Y Y=Y YE
= AYE
R AR
W WW =W W= EW EKE EK

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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