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[NATIONAL INSTITUTE OF TECHNOLOGY, ARUNACHAL PRADESH.
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us for MS In Electronic Science
‘Name of the Module: Electronic and Optical Communication
Module Code: ELS 202
Semester: 2“
Credit Value: 3{P=0, T=0,
Module Leader:
A, Objectives:
‘The couse is designed to meet withthe objectives of:
TPT inrodace the stant about Optical Fiber, Wave propagation, Detetors and its stucures and
fictions.
2 Tosdy diferent circuits used in communication
55 Testy diferent ansmission& reception systems
B. Subject Matter:
UNITE
Fundamentals of signal transmission and signal processing Signals and systems, Fourie trans-
form, FFT, Z-nsformer, Laplace transfor, Fite
“Analog transmission: Modulation, Amplitude modulation, DSB-SC, SSB-SC, QAM, VSB,
TDM. FDM, Sampling, PAM, PWM. PPM. 3-Module
Linear and non-linear signal quantizing: Compander and expander, ASK, PSK. PSK. Maden,
‘Channel band with, Shan’ theorem (channel capaci)
‘Optical Communication: Optical fits. Dispersion and loss in optical bers. Optical couplers
and modulates, Semiconducor detecrs for opal communications, base requirements of
‘aractristis, Semicondovtr lasers for pte comnuricstion
Basic opacal communication systems: Inns modulation, Direct detection system,
Regenration, Signal to noise ratio and Bit eo rate, Optical amplifiation, Wavelength division
muluplexing, Coherent detection
[Estey lay ons Reser One nO
NATIONAL NSMTUTE OF TCHNOLOGT, ARUNACHAL PRADESH
oD oe
Syllabus for MS in Electronic Science
‘Name of the Modute: Nano-Electronics
Module Code: ELS 205
Semester: 2
Credit Value: 3[P=0, T=0, L=3]
Module Leader:
A. Objectives:
The course is designed to meet with the objectives of:
1 invodoce the stents nanoelectronics, naakevies,spintonis and molecu electronics
2 identify quantum mechanics behind nanoelectronics
3. deserite the principle al the operation of nanelectronic devices
44 explain he principle and application of spinon devices
1B. Subject Matter:
UNITE
Fundamental phsies and quantum mechanics: Electrons in one ator, Photosectric effet. the
uncertainty principle, wavefunction, Schradingsr equation, Eigenfunctcns, Quantum nubs,
Superpositon of egenfretions Probability desites, Angular momentum, Spins, Hermtean
‘operator, wo patie system, Nanocluser with tne of atoms, Quantum ell and tunneling
unr
Nanoscale CMOS devices: Scaling of CMOS, Short channel effets, Techwogies vo combat
shor channel fies, Gate Engineering Suan Engineering, Gate ll around MOSFET, Nanowire
FETs
UNIT:
‘Nanoelectronic devies: Nanowizes, quantum dots, nanopilars, quantum tanspet and tunneling
elects, spinependent eleton transport, molecular electrons, and single electron transistors,
‘Graphene and carbon nanotube ransisers
‘Sprintronics: Basics of magnetism and the origin of magnetism atthe stomie sale, magnetic
properties of thin flims and ranostrutures, Giant mognetoresitance (GMR) and tunel
hragnetoressiance (TM), Option principle of magnetic nanooseilatoes, Operation principle
of spn tasisto.