HA pg OS fy -) 88 MASK-PROGRAMMABLE 05 a aa IMBIT (131,072 x 8) CMOS READ ONLY MEMORY The Fujitsu MB 831000 is a CMOS Sigate mask-programmable static read only memory organized as 131,072 words by 8 bits The MB 831000 has TTL-compatible 1/0 and 3tate output level with fully static operation (2. no need of clock signal) and a single +5V power supply is required. Also, the MB 831000 is designed for applications such as charac: ter generator oF program storage which require large memory capacity and high speed/low-power operation © Organization: ‘Access time: 131,072 words x 8 bits 150 ns (MB 831000-15) 200 ns (MB 831000:20), Completaty static operation: No elock required TTL compatible Input/Output ‘Three state ourput Single +5V power supply Power dissipation: 220 mW max. (Active) 16.5 mW max. (Standby, TTL input level) 275 uW max. (Standby, CMOS input level) 1 Standard 28 pin DIP ABSOLUTE MAXIMUM RATINGS (See NOTE) Rating Symbol Value Unit Supply Voltage Veo ~oa0+70" |v Input Voltge Vou 0510 Vect05"| Vv Output Votteae Vour | -O5t0Vecros"| v ‘Temperature Under Bias 10 to +85 c Storage Temperature Range 45 to +125 "Referenced to GND NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exporure to absolute maximum rating conditions for extended periods may affect device reliability. MB831000-15 MB831000-20 November 1987 Eston 20 PLASTIC PACKAGE ?-28P-MO2 asdf and ag ae aq] ad aq pacfa Tor view ads Ao}10 odu 02412 033 Yee] a "Th deve contain raaiey To provweet We puts against damage due to igh nae vat Sepicstion of any wolape hignerthan_ max: imum red ols 19 vs high “opedmce 2-3FUJITSU g831000-15 INH 4B831000-20 = Fig, 1 MB 831000 BLOCK DIAGRAM — “eV fener | + Poa f« nom cut Arey lee os | a—a+ | Av ——-+| Welt 04 02 O3 O4 O§ Og O7 Op TRUTH TABLE, oo | CAPACITANCE ita = 25°, += 1012) Parameter Symbo! ee sit Output Capacitance (Vour * OV! 10 pF Input Capsestance (Viy = OV) 24Havre MB831000-15 FUSITSU MB831000-20 _IEIIIFIINITINI RECOMMENDED OPERATING CONDITIONS (Referens to GND) Parameter sybor min We Max Uni Supply Voltage Vee aoe an 55 v Input Low Voltage Va Ho 08 v Input High Voltage va |e Veot0a v Ambient Temperature "| 7, - o 70 c DC CHARACTERISTICS (Recommended operating conditions unless otherwite noted.) TI Active Supply Current Neo 40 mA CE = Vi. Minimum Cycle [i > em | eve Output Low Voltage - Vou 0. . v Jou = 2.1mA, Fig. 2 ~ AC TEST CONDITION Input Pulte Rise and Fal Time ty = 1038 5 Timing Reference Levelt Inputs" Vy, ~O8V, Yi 2.2 urout Loss TTL Gate and 1000F . 2-5‘OLeETUNeN FUSITSU 831000. ‘STINT! ~-MB831000-20 AC CHARACTERISTICS 15 (Recommended operating conditions unless otherwise noted.) MB 831000:15 MB 83100020 Parameter Symbol {unit Min Max Min Max ‘Address Recess Time tace 150 200 ns | Chip Enable Access Time lee 150 200 ne Output Disable Time lor 60 60 ns } Output Hold Time tow ° ° 8 TIMING DIAGRAMMB831000-15 FUJITSU ‘MB831000-20 _ [IH HisHNIFI MB 831000 ROM CODE DATA INPUT METHOD Fulitsu’s preferred method of reesiving ROM Code Data isin the form of Programmed EPROMs or Magnetic Tapes. Fujitsu produces the Masks in accordance with the Data in received EPROM: or Magnetic Tapes using Fujitsu computer systems MASK ROM CODE DATA RELEASE BY EPROMS: © 128K EPROM. When the customer releases his Mask ROM Data in the form of EPROMs, he should use 8 pes of MBM 27128 or equivalent and program data of 8 address blocks (Address 0 t0 16 K, 16 K to 32 K. 32 K to 48K, 48K to 64 K, 64 K to BOK, 80 K 10 96 K, 96 K 10112 K and 112 K to 128 K) of MB 831000 to each MBM 27128 EPROM. Fujitsu requires 3 sets, total 24 pes, ‘of such programmed EPROMK, (Two sets, total 16 pes, are acceptable.) In addition t0 the programmed sets, Fujitsu requires an additional set of blank EPROMs (8 pes! for supplying customer ROM Data Code verification, se 7 use aie [ars] ara [aia] az] an [aiol as [as [ ar] as | as [ | | | a] v0 of MBM27128 WWo. i) 0 to 16K) o fos MBM 27128 (No.2: 16K 39K (om| ed _ MBM 77128 (No.3. 32Kt 46K) o 1 1. - MOM 27128 (No.4: 48K to GéKt r,Lofo! a MBM 27128 (No.5: 64K to 80 KI = | tet MBM 27126 No.6 60 Ko 96K) [1 [o MBM 27128 (No.7: 96 K 10 112K) 1 rt MBM 27128 INo-8: 112 K0 178) : © 256K EPROM When the customer releases his Mask ROM Data in the form of EPROMs, he should use 4 pes of MBM 27C256 or equivalent and program data of 4 adress blocks (Address 0 to 32K, 32K to 64K, 64K to 96K and 96K to 128K! of MB 831000 to each. MBM 270256 EPROM. Fujitsu requires 3 sets, total 12 pcs, of such programmed EPROMs. (Two sets, total 8 pes, are acceptable.) In sddition to the programmes sets, Fujitsu requires an additional set of blank EPROMs (4 pes! for supplying customer ROM Data Code verification se use ae [as[an[as[aalan[aol alata lar[ala[alala [so apo Wn 27H Wo iO vo 32K) o 1 MBM 27€256 (No. 2: 32K to 64K) ~ 1 0 MBM 270256 (No. 3: 64K to 96K) | oh MBM 270256 (No.4 96 K to 128 K) 2-7QUOT FUJITSU MB831000-15 IWMI) -MB&31000-20 MASK ROM CODE DATA RELEASE BY MAGNETIC TAPES: ‘When the customer releases his Mask ROM Cade Data in the form of Magnetic Tapes (MT, he should use tapes that ean be ‘used on IBM compatible equipment and meet the following requirements © Physicat Requirements 1 Length = 2400 fe 2 Wath 1/2ineh 3 Track: Qtracks 4 Density ~ 800 BPI or 1600 BP! 1, 1200 feet, or 600 feet © MT Format + Label No tape mark on he header of tape 2 Record Size - 0 bytesirecora 3 Block Size: Single record/biock 4 File Single tile/volume 5 Code Used; ERCDIC code a 2sc/nent00 t+ 1 | 4 ons | daa |, . | pa | bata tracks | BOT | Block | Black Block | Block | TM | m™ | €or | 1 Le Note: BOT : Beginninget Tape EOT : End of Tape TM: Tape mark Data Bick Format on 9) 10 5] 16 19 | 20 67 | 68 72/73 80 nite 1 adres Unaetines Field Undetines ata Fits Unaetioed | secuence Field (1 Head Ftd (36 worst Feld Number Acres) oom TG pes Govtes aye a8 bytes Sovtes Boyes Note: 1 byte/row 2-8MB831000-15 FUJITSU MB831000-20 _ | I/iIHININ/NNE Undefined Filed (Row 1~9/Row 16~19/Row 68~72): In this field, blanks (B) should be recorded ‘Address Field (Row 10~ 18): In the addess field, the header addvess of the 16.word data that follow the addrest field should be recorded in the form of a five-digit hexadecimal number following a symbo! "=". The correspondence of actual binary address to this hex address isshown in the following example. usa Ls Address Bit | AN6] A15 [Ata [A13 [Atz [ati [AiO | Ad | AB A? [AB [AB Ad] AS AD TAT Hex Adgvess| o 3 L 8 2 2 Recorded Form | Data Field (Row 20 ~ 67): ln this field, 1G-word data with 16 successive addresses should be recorded in the form of two-digit hexadecimal numbers followed by a blank (bl, (The header data is for the address recorded in the address field.) The correspondence of actual binary data to this hex data is show in the following example, [co [oo [es eee Binary Oo TC Hex Data - F ~ 2 Recorded Data i : Fz ‘Sequence Number field (Row 73 ~ 80) In this field, the sequence number of each record (dt block) should be recorded in the form of an eight-digit decimal number, Wich must be counted up by tens. All digits to the lett of the most significant digit should be zeros, not blanks, Refer to the following example Adcress Dawe 10 15] [20 22/23 25 65 03892 Fz Agb : : on ‘00000010 2-9San FUJITSU MB831000-15 ‘(HUET MBB31000-20 PACKAGE DIMENSIONS 28-LEAD PLASTIC DUAL IN-LINE PACKAGE 2 | ee ooo onooooono, sStMAX NESTOR WAR f inex \ } 38:02) 1 | coottdaanrve ooo ooo ooo L - 1.4077 208135 79°93) | cross 888" Sj osatsamax = fH 21042 o9'28, — ; A | 19514 961MAx uae — ae |. 20! __ | ores.on3 2-10