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SOIC-8
D2 D1
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S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1
S2 S1
Pin1 n-channel p-channel
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS 20 20 V
Continuous Drain TA=25C 6 -6.5
ID
Current TA=70C 5 -5.3 A
C
Pulsed Drain Current IDM 30 -30
Avalanche Current C IAS, IAR 10 23 A
Avalanche energy L=0.1mH C EAS, EAR 5 26 mJ
TA=25C 2 2
PD W
Power Dissipation B TA=70C 1.3 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 48 62.5 C/W
RJA
Maximum Junction-to-Ambient A D Steady-State 74 90 C/W
Maximum Junction-to-Lead Steady-State RJL 32 40 C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 15
10V VDS=5V
25 4.5V
7V 12
20
4V 9
ID (A)
ID(A)
15
3.5V 6
10 125C
3 25C
5 VGS=3V
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
45 2
35
17
1.4 5
30 2
1.2
VGS=10V 10
25 ID=8A
1
VGS=10V
20 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Gate
0
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)
18
100 1.0E+02
ID=6A
1.0E+01
80 40
1.0E+00
)
RDS(ON) (m
1.0E-01 125C
IS (A)
60 125C
1.0E-02
25C
25C
40 1.0E-03
1.0E-04
20 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 500
VDS=15V
ID=6A
8 400
Capacitance (pF)
Ciss
VGS (Volts)
6 300
4 200
Coss
2 100
Crss
0 0
0 2 4 6 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 1000
TA=25C
10s
10.0
RDS(ON)
limited 100
Power (W)
100s
ID (Amps)
1.0 1ms
10ms 10
0.1 TJ(Max)=150C DC 10s
TA=25C
0.0
1
0.01 0.1 1 10 100 0.00001 0.001 0.1 10 1000
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
Figure 9: Maximum Forward Biased
to-Ambient (Note F)
Safe Operating Area (Note F)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JA Normalized Transient
Thermal Resistance
1 RJA=90C/W
0.1
PD
0.01
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
40 40
-10V -4.5V VDS=-5V
-5V
30 30
-4V
-ID(A)
-ID (A)
20 20
-3.5V 125C
10 10 25C
VGS=-3V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
45 1.8
30 1.4
17
25
5
1.2 2
VGS=-4.5V
20
ID=-5A 10
VGS=-10V 1
15
10 0.8
0 5 10 15 20 0 25 5075 100 125 150 175
-ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Gate 0
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E) 18
90 1.0E+02
ID=-6.5A
1.0E+01
70 40
1.0E+00
125C
)
RDS(ON) (m
1.0E-01
-IS (A)
50 125C
25C
1.0E-02
30 1.0E-03
25C
1.0E-04
10 1.0E-05
2 4 6 8 10 0.0 0.20.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 1200
VDS=-15V
ID=-6.5A
1000
8
Ciss
Capacitance (pF)
800
-VGS (Volts)
6
600
4
400
Coss
2 200
Crss
0 0
0 3 6 9 12 15 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 1000
TA=25C
10s
10.0
RDS(ON)
limited 100
-ID (Amps)
100s
Power (W)
1.0 1ms
10ms
10
0.1 TJ(Max)=150C DC 10s
TA=25C
0.0
1
0.01 0.1 1 10 100
0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note F) to-Ambient (Note F)
10
D=Ton/T In descending order
Z JA Normalized Transient
1 RJA=90C/W
0.1
PD
0.01
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Ig
Charge
td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+
Vgs 10%
Vds
Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds