Photonic device

ISI KANDUNGAN (CONTENT):

1.0 SEMICONDUCTOR OPTOELECTRONIC PROPERTIES (4 Hours)

1.1 Optical properties of Direct- and Indirect-Gap Semiconductors

1.2 Semiconductor band gap

1.3 Photoluminescence

2.0 MONO- AND HETERO-JUNCTION SEMICONDUCTOR (6 hours)

2.1 P-N Junction semiconductor

2.2 Mono-junction semiconductor

2.3 Hetero-junction semiconductor

2.4 Electro-optical properties of semiconductors

3.0 LIGHT EMITTING DIODES (4 Hours)

3.1 LED materials and characteristics

3.2 Output wavelength variations

3.3 High intensity LED

3.4 Application of LEDs

4.0 PHOTODETECTORS (4 Hours)

4.1 Photodiode materials

4.2 Absorption coefficient and efficiency

4.3 The photodiode structure

5.0 PHOTOVOLTAIC DEVICES (6 Hours)

Project Presentation

Final Exam