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GaN Nanowall Transport Analysis

This document summarizes an experiment where GaN nanowall chunks were dropcast onto a high resistive p-type silicon wafer and four tungsten contacts were made for transport measurements. Scanning electron microscopy images show the GaN sample with four probe contacts. When a superconductor is placed in contact with a semiconductor, the semiconductor can gain the ability to transmit dissipationless supercurrent due to the superconducting proximity effect.

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Himadri Chakraborti
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71 views1 page

GaN Nanowall Transport Analysis

This document summarizes an experiment where GaN nanowall chunks were dropcast onto a high resistive p-type silicon wafer and four tungsten contacts were made for transport measurements. Scanning electron microscopy images show the GaN sample with four probe contacts. When a superconductor is placed in contact with a semiconductor, the semiconductor can gain the ability to transmit dissipationless supercurrent due to the superconducting proximity effect.

Uploaded by

Himadri Chakraborti
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

1

Transport through random network of GaN nanowall is placed in contact with any normal conductor or semi-
was previously studied by Bhaskar et al.[? ]. Polarization conductor then the later one can get the superconduc-
induced accumulation of two dimensional electron gas tor like property like ability to transmit a dissipationless
(2DEG) in the confined region inside the nanowalls was supercurrent. This is called superconducting proximity
predicted. Theoretical investigation on a single nanowall effect and first observed by Holm and Meissner [? ].
of GaN of the same shape was also done by Swarup et al.
[? ] and again the 2DEG accumulation was anticipated.
To get a realization of these speculations, GaN single
nanowall chunks was dropcasted on high resistive p-type RESULTS AND ANALYSIS
si wafer. Each chunk might contain a few number of
nanowalls. Four tungsten contacts were made by focused Figure-2.1 is the scanning electron microscopic (SEM)
ion beam arrangement for transport measurements. image showing the GaN sample along with the four
Semiconductor and superconductor are two type of tungsten probes contacts.
widely studied material classes. Superconductors are
known for dissipationless transport and a excellent ma-
terial for electromagnet whereas semiconductors are fa- FIG. 1: (a) and (b) Scanning electron microscopy image of
mous for their carrier tunability, band gap engineering the S-Sm-S junction; (c) schematic of the single nanowall with
and a other whole lot of useful properties. But together four contacts.
they are even more fascinating because of the contagious
property of the semiconductor. When a superconductor

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