Low Noise Transistors BC549B,C

NPN Silicon
BC550B,C
MAXIMUM RATINGS
Rating Symbol BC549 BC550 Unit
CollectorEmitter Voltage VCEO 30 45 Vdc
CollectorBase Voltage VCBO 30 50 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25C PD 625 mW 1
2
Derate above 25C 5.0 mW/C 3

Total Device Dissipation @ TC = 25C PD 1.5 Watt

Derate above 25C 12 mW/C CASE 2904, STYLE 17
TO92 (TO226AA)
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit COLLECTOR
1
Thermal Resistance, Junction to Ambient RJA 200 C/W
Thermal Resistance, Junction to Case RJC 83.3 C/W
2
BASE

3
EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) BC549B,C 30
BC550B,C 45
CollectorBase Breakdown Voltage V(BR)CBO Vdc
(IC = 10 Adc, IE = 0) BC549B,C 30
BC550B,C 50
EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc
(IE = 10
Adc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 30 V, IE = 0) 15 nAdc
(VCB = 30 V, IE = 0, TA = +125C) 5.0 Adc
Emitter Cutoff Current IEBO 15 nAdc
(VEB = 4.0 Vdc, IC = 0)

Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

February, 2001 Rev. 1 BC549B/D
 BC549B,C BC550B,C

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain hFE
(IC = 10 Adc, VCE = 5.0 Vdc) BC549B/550B 100 150
BC549C/550C 100 270
(IC = 2.0 mAdc, VCE = 5.0 Vdc) BC549B/550B 200 290 450
BC549C/550C 420 500 800
CollectorEmitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 0.5 mAdc) 0.075 0.25
(IC = 10 mAdc, IB = see note 1) 0.3 0.6
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2) 0.25 0.6
BaseEmitter Saturation Voltage VBE(sat) 1.1 Vdc
(IC = 100 mAdc, IB = 5.0 mAdc)
BaseEmitter On Voltage VBE(on) Vdc
(IC = 10 Adc, VCE = 5.0 Vdc) 0.52
(IC = 100 Adc, VCE = 5.0 Vdc) 0.55
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 0.55 0.62 0.7
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product fT 250 MHz
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
CollectorBase Capacitance Ccbo 2.5 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
SmallSignal Current Gain hfe
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B 240 330 500
BC549C/BC550C 450 600 900
Noise Figure dB
(IC = 200 Adc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) NF1 0.6 2.5
(IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) NF2 10

NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 s Duty cycle = 2%.

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

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 BC549B,C BC550B,C

2.0 1.0
VCE = 10 V 0.9 TA = 25C
hFE, NORMALIZED DC CURRENT GAIN
1.5
TA = 25C
0.8
VBE(sat) @ IC/IB = 10
1.0 0.7

V, VOLTAGE (VOLTS)
VBE(on) @ VCE = 10 V
0.8 0.6

0.6 0.5
0.4
0.4 0.3

0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 2. Normalized DC Current Gain Figure 3. Saturation and On Voltages

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

10
400
300
7.0
200 TA = 25C
Cib
C, CAPACITANCE (pF)
5.0
100
80 VCE = 10 V
TA = 25C 3.0
60
Cob
40
30 2.0

20

1.0
0.5 0.7 1.0 2.0 5.0 7.0 10 20 50 0.4 0.6 1.0 2.0 4.0 10 20 40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)

Figure 4. CurrentGain Bandwidth Product Figure 5. Capacitance

170
r b, BASE SPREADING RESISTANCE (OHMS)

160

150
VCE = 10 V
f = 1.0 kHz
140
TA = 25C

130

120
0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mAdc)

Figure 6. Base Spreading Resistance

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 BC549B,C BC550B,C

PACKAGE DIMENSIONS

CASE 02904
(TO226AA)
ISSUE AD

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A Y14.5M, 1982.
B 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION XX J 0.015 0.020 0.39 0.50
V C K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
1 N P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
N V 0.135 --- 3.43 ---

STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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