= . O8EC32 SUPPLYMENTARY SEMESTER B.E DEGREE EXAMINATION. AUGUST 2010 a Electronics & Communication Engineering Analog Electronic Circuits (08EC32) ‘Time: 3Hrs Max. Marks:100 Instructions: | Answer one full question from each unit. UNIEL A. ae Determine V,,Vzand Vp for the series DC Configuration forthe igure mentioned below. fy s10%7 saa 1b, tapain the working of full wave bridge rectifier. $3 tans Determine the DC Blas voltage Vee and current ifr the whage divider configuration given. epeatthe analysis approximate technique. E tots 2. -&) Explain how transistor can be used as switch. ssa Elda tering ofa double ended clipper. 3.4 oat “The enter tas configuration given has the following spetieatonttea= 1 kay haar = SA, Ve = 18Vand P10. Determine RC, RE and RO. am te tots oN 3. ad Whatarethe advantages of h-parameters. 2 maa [be Find our the overall voltage gain, overall current gain, Input impedance and output impedance in ‘he crit shown in fig. 3. Given: hf,=100; hie=1,640, hre=2x10'*hoe= 20.2. hoe 29K Ne e ome fos shitseis Page 1 of 2ogeC32-2 Suse [# CoA poww dh z Explain emitter follower with neat circuit diagrarn, Epa the complete frequency response of a RC coupled amplifier. “be” Drawthe high frequency response of the amplifier shown fig. ‘Given: Cg-5PF;Cuo=BPF, Cie=12PF, Cye=4OP FC g28PF 7 UNITA 5 ) Bret expla cascade amplifier. Exphin the daington connection. CC. Sepinthe diferent advantages of a negative feedback phir. 8, aL” Gilly explain the different types of feedback connections. (,in6 1, Dethe the expression for overall voltage gain, input resstance and output resistance in voltage series feedbockamplifier. uNriy 7. a Foratamode distortion reading of Dae 0:1, Dy= 002 and Di= 004, with Li=4A and RC=80. Calaute etl harmonic dbstortion ndamentalpowet canponet and otal power _b/ tahinte wing ofa Re phase shit osllator. $84 C._ Clase ficency ofa clos B power ampli for 2 soppy wltage of Vee=24v with peak tutptotagtV}e22v- Also show thet the maximum fceney ea cass 8 amplifir ls 78.59% Atesntcen heel nology of power transistor B.A” The folowing data is available for colpitts oscillator Cy=InF G-990F L=1.5mh and hfe=110. Check ‘whether the condition for oscillation is satisfied. If yes. Cakulate the frequency of oscillation. AB. Wine anoteon OC and AC analysis of transformer coupled dass power amplifier. ©. ASlicon transistor is rated for LOOW at 25%e. Calculate the maximum dissipation at 125° if the erating is required above 25°c with a derating factor of 0Sw/c Also explain the power derating ‘curve for silicon transistor. UNITY 9 a. Design 2 fhed Blas common source FET amplifier to meet the following conditions: IAvt TcAOMO, l= 10ma, Vp=-Sv, Yos=25jS. Calculate Zo. bb, Obtainthe expression for 2i, 20 and Av for a sel Bias source JFET amplifier with Unbypassed Rs. 410 a. FortheNetwork given Vesq=0.35v, lyse 6ma, Vp=-3V and Y= 1015, Determine Zi, Zo and AV. 2¥, ont +l . ve. won LCs al 1, K02M107AWV?, Yor = 20NS calculate Zi, Zo 1b, Forthe EMosfet ercult given VGS=6.4v, VOS(TH) ‘and Av roma: 32K tae ¢. Obtain the mathematical expression for fn and its relationship with DC Bias current, Page 20f2 tarts 8 Marks same Ob Matte os arts os tfone somata ‘so marks os wens os erke os arte osatats somtas os Monts 10 tarts 40 macs emake sousks ot Marks