Bulletin I27247 rev.

B 11/06

70MT060WHTAPbF
"HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT

Features
NPT Warp2 Speed IGBT Technology
VCES = 600V
with Positive Temperature Coefficient
Hexfred Antiparallel Diodes with UltraSoft
VCE(on) typ. = 2.1V @
Reverse Recovery
SMD Thermistor (NTC)
VGE = 15V, IC = 70A
Al2O3 DBC
Very Low stray Inductance Design for high
TC = 25C
Speed Operation
UL Pending
TOTALLY LEAD-FREE

Benefits
Optimized for Welding, UPS and SMPS
Applications
Higher Switching Frequency up to 150kHz
Lower Conduction Losses and Switching
Losses
Low EMI, requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals

MMTP

Absolute Maximum Ratings

Parameters Max Units
V CES Collector-to-Emitter Voltage 600 V
IC Continuos Collector Current @ T C = 25C 100 A
@ T C = 78C 70
ICM Pulsed Collector Current 300
ILM Peak Switching Current 300
IF Diode Continuous Forward Current @ T C = 78C 53
IFM Peak Diode Forward Current 200
V GE Gate-to-Emitter Voltage 20 V
V ISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
PD Maximum Power Dissipation, IGBT @ T C = 25C 347 W
@ TC = 100C 139

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70MT060WHTAPbF
Bulletin I27247 rev. B 11/06

Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 500A
V CE(on) Collector-to-Emitter Voltage 2.1 2.4 V GE = 15V, I C = 70A
2.8 3.4 V GE = 15V, I C = 140A
2.7 3 V GE = 15V, I C = 70A, T J = 150C
V GE(th) Gate Threshold Voltage 3 6 IC = 0.5mA
I CES Collector-to-Emiter Leaking 0.7 mA V GE = 0V, V CE = 600V
Current 10 V GE = 0V, V CE = 600V, T J = 150C
I GES Gate-to-Emitter Leakage Current 250 nA V GE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions
Qg Total Gate Charge (turn-on) 460 690 nC IC = 70A
Qge Gate-Emitter Charge (turn-on) 160 250 V CC = 480V
Qgc Gate-Collector Charge (turn-on) 70 130 VGE = 15V
Eon Turn-On Switching Loss 1.1 mJ RG = 10
Eoff Turn-Off Switching Loss 0.9 IC = 70A, VCC = 480V, VGE = 15V, L = 200H
Ets Total Switching Loss 2 Energy losses include tail and diode reverse
recovery
Eon Turn-On Switching Loss 1.27 mJ RG = 10
Eoff Turn-Off Switching Loss 1.13 IC = 70A, VCC = 480V, VGE = 15V, L = 200H
Ets Total Switching Loss 2.4 Energy losses include tail and diode reverse
recovery, TJ = 150C
td on Turn-On Delay Time 314 ns RG = 10
tr Rise Time 49 IC = 70A, VCC = 480V, VGE = 15V, L = 200H
tdoff Turn-Off Delay Time 308 Energy losses include tail and diode reverse
tf Fail Time 68 recovery
td on Turn-On Delay Time 312 ns RG = 10
tr Rise Time 50 IC = 70A, VCC = 480V, VGE = 15V, L = 200H
tdoff Turn-Off Delay Time 320 Energy losses include tail and diode reverse
tf Fail Time 78 recovery, TJ = 150C
Cies Input Capacitance 8000 pF VGE = 0V
Coes Output Capacitance 790 VCC = 30V
Cres Reverse Transfer Capacitance 110 f = 1.0 MHz
RBSOA Reverse Bias Safe Operating Area full square TJ = 150C, IC = 300A
VCC = 400V, VP = 600V
RG = 22 , VGE = +15V to 0V

Thermistor Specifications
Parameters Min Typ Max Units Test Conditions
(1)
R0 Resistance 30 k T0 = 25C
(1) (2)
Sensitivity index of the thermistor 4000 K T 0 = 25C
material T 1 = 85C
(1)
T0,T1 are thermistor's temperatures
[ ( 1T
(2) 1
R0
= exp
T1
)]
R1 0

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 7MT060WHTAPbF
Bulletin I27247 rev. B 11/06

Diode Characteristics @ TJ = 25C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions
V FM Diode Forward Voltage Drop 1.64 2.1 V I C = 70A, VGE = 0V
2.1 2.4 I C = 140A, VGE = 0V
1.69 1.9 I C = 70A, VGE = 0V, TJ = 150C
trr Diode Reverse Recovery Time 96 126 ns VCC = 200V, IC = 70A
Irr Diode Peak Reverse Current 9.4 12.8 A dI/dt = 200A/ sec
Qrr Diode Recovery Charge 440 750 nC
trr Diode Reverse Recovery Time 140 194 ns VCC = 200V, IC = 70A
Irr Diode Peak Reverse Current 14 19 A dI/dt = 200A/ sec
Qrr Diode Recovery Charge 950 1700 nC T J = 125C

Thermal- Mechanical Specifications

Parameters Min Typ Max Units
TJ Operating Junction IGBT, Diode - 40 150 C
Temperature Range Thermistor - 40 125
TSTG Storage Temperature Range - 40 125
RthJC Junction-to-Case IGBT 0.36 C/ W
Diode 0.8
RthCS Case-to-Sink Module 0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
(3)
T Mounting torque to heatsink 3 10% Nm
Wt Weight 66 g
(3)
A mounting compound is recommended and the torque should be checked after 3 hours to allow for the
spread of the compound

1000 160
Vge = 15V
IC, Collector-to-Emitter Current (A)

Allowable Case Temperature (C)

140

120
100
100
Tj = 150C DC
80

60
10
40

Tj = 25C 20

1 0
0.0 1.0 2.0 3.0 4.0 5.0 0 20 40 60 80 100 120

VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A)

Fig. 1 - Typical Output Characteristics Fig. 2 - Maximum Collector Current vs. Case
Temperature

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70MT060WHTAPbF
Bulletin I27247 rev. B 11/06

4.5 16
VCE, Collector-to-Emitter Voltage (V)

VGE, Gate-to-Emitter Voltage (V)

4 14
Ic = 140A
12
3.5

10
3
Ic = 70A 8
2.5
6
2
Ic = 30A 4
1.5
2 Vcc = 480V

1 0
20 40 60 80 100 120 140 160 0 200 400 600 800 1000
TJ, Junction Temperature (C) QG, Total Gate Charge (nC)

Fig. 3 - Typical Collector-to-Emitter Voltage vs. Fig. 4 - Typical Gate Charge vs. Gate-to-
Junction Temperature Emitter Voltage

1000

Tj = 150C
100
Instantaneous Forward Current - I F (A)

10

Tj = 25C

1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Forward Voltage Drop - VFM (V)

Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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 7MT060WHTAPbF
Bulletin I27247 rev. B 11/06

10.0000 4.5
ICES, Collector-to-Emitter Current (mA)

150C

1.0000
4.0 25C

0.1000

Vgeth (V)
3.5
0.0100 125C

25C
3.0
0.0010

0.0001 2.5
200 300 400 500 600 0.1 1.0
VCES, Collector-to-Emitter Voltage (V) IC (mA)

Fig. 6 - Typ. Zero Gate Voltage Collector Fig. 7 - Typical Gate Thresold Voltage
Current
1400 1000

1200
tf

1000
Switching Time (ns)

Eon td (off)
Energy (J)

800
tr
100
600

400 Eoff
td (on)
200

0 10
0 20 40 60 80 0 20 40 60 80
IC, Collector-to-Emitter Current (A) IC, Collector-to-Emitter Current (A)

Fig. 8 - Typical Energy Losses vs. IC (T J = 150C) Fig. 9 - Switching Time Vs IC

350
IC, Collector-to-Emitter Current (mA)

300

250

200

150

100

50

0
0 100 200 300 400 500 600 700

IC, Collector-to-Emitter Voltage (V)

Fig. 10 - Reverse Bias SOA .Tj=150C

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70MT060WHTAPbF
Bulletin I27247 rev. B 11/06

160 40
Vr = 200V Vr = 200V

35
140
If = 70A, 125C
30

120 If = 70A, 125C

25

I RRM (A)
t rr (ns)

20
100
If = 70A, 25C
15

80
10 If = 70A, 25C

60 5
100 1000 100 1000
dif /dt - (A/s) di f /dt - (A/s)

Fig. 11 - Typical Reverse Recovery vs. dif/dt Fig. 12 - Typical Reverse Recovery Current vs. dif/dt

2000
Vr = 200V
1800

1600

1400 If = 70A, 125C

Q RR (nC)

1200

1000

800 If = 70A, 25C

600

400

200
100 1000

dif /dt - (A/s)

Fig. 13 - Typical Stored Charge vs. dif/dt

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 7MT060WHTAPbF
Bulletin I27247 rev. B 11/06

1
Thermal Impedance - ZthJC (C/W)

D = 0.75
D = 0.50
0.1 D = 0.33
D = 0.25
D = 0.20

0.01 Single Pulse

(Thermal Resistance)

0.001
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

t1 , Rectangular Pulse Duration (Seconds)

Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (IGBT)

1
D = 0.75
Thermal Impedance - ZthJC (C/W)

D = 0.50
D = 0.33
0.1 D = 0.25
D = 0.20

0.01 Single Pulse

(Thermal Resistance)

0.001
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

t1, Rectangular Pulse Duration (Seconds)

Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Diode)

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70MT060WHTAPbF
Bulletin I27247 rev. B 11/06

Outline Table

Functional Diagram

Electrical Diagram

Resistance in ohms
Dimensions in millimetres
Note: unused terminals are not assembled in the package

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 7MT060WHTAPbF
Bulletin I27247 rev. B 11/06

Ordering Information Table

Device Code
70 MT 060 W H T A PbF

1 2 3 4 5 6 7 8

1 - Current Rating (70 = 70A)

2 - Essential Part Number
3 - Voltage rating (060 = 600V)
4 - Speed/ Type (W = Warp IGBT)
5 - Circuit Configuration (H = Half Bridge)
6 - T = Thermistor
7 - A = Al2O3 DBC Substrate
8 - Lead-Free

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/06

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