Notice: You cannot copy or search for text in this POF file, because this PDF file is converted from the scanned image of printed materials.N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2SK1060,2SK1060-2 DESCRIPTION The 2SK1060, 2SK1060-Z are N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATURES. 4V Gate Drive — Logic level — Low Roston) No Second Breakdown Designed for Hybrid Integrated Circuits ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature... . <. 85 t0 +150°C Junction Temperature . 150°C Maximum ‘Maximum Power Dissipations Total Power Dissipation. ee Total Power Dissipation (Te**= 25°C)... 20 W Maximum Voltages and Currents (T= 25°C) Voss Drain to Source Voltage..... 100 V Vass Gate to Source Voltage 220 Vv Ip(oc) Drain Current (OC) 350A Ip{puise) Drain Current (pulse) ** 420A + Mounted on ceramic substrate of 7.5em? 0.7 mm sete 225°C +++ pl 10 us, Duty Cyele 1% ELECTRICAL CHARACTERISTICS (T= 25°C) (CHARACTERISTIC MIN, TYP._-MAX, UNIT TEST CONDITIONS in t0 Source On State aoe 018 027 @ — Vgs= 10,1 =A Drain to Source On-State Roston) —Renmasnce 022 038 a Vas=4V,Ip= 98 Vosiott) Gate to Source Cutoff Voltage 1.0 25 Vo Vog=10V. 1p = 1 ma vis Forward Transfer Admittance 4.0, S Vos 10V, Ip=38 ‘oss Drain Leakage Current 10 4A Vos~ 100 V, Vas =0 ‘oss Gate to Source Leakage Current 100 nA Vgg=#20V, V3 =0 Ces Input Capacitance ‘900 °F 1 Vpg=10¥ Com ‘Output Capacitance 250 PF Vgg=0 Cs Reverse Transtor Capacitance so pe] fasts Alon) Turn-On Delay Tire 10 ns © Rise Time 40 ns Ip=3AVpp=50V RL-7a fdlott) ——-Turn-OF Delay Time 10 | neon ao Fell Time 20 ns NEC cannot assume any responsibilty for any circuits shown oF represent thet © NEC Corporation 1369PACKAGE DIMENSIONS (Unit : mm) posson tt sooo, estar 1. cate 2. rain 2. Drain Fin) TYPICAL CHARACTERISTICS (Ta = 25°C) DERATING FACTOR OF FORWARD ag AMBIENT TEMPERATURE BIAS SAFE OPERATING AREA a or 7 i > 2 f Xe) g = Ke 3 3 x ; i & * Fees SL Sharia | Spe in teen cbr TOTO Cr ee es eee eT Te~ Cove TemperatireC ‘Yps~Dran to Source Vattage—V Ge ies eae no BRAIN FO SOURCE voLTAce i \LIZE0 TRANSIENT THERMAL RESISTANCE vs. PULSE WiOTH PY a é 16 os 5 < z i 14 Be 2 . 4 2 < E a 5 é mor é 3 aa! errs (225°C!) 54 rc Foal — lee Ope ea er Cnet ore alte ta Tea a Vos~Drain to Source Votoge—¥ 2 PW-Puse with—sRs(on)~Drain to Source on-state Resistance —0 pean Curent |30~ Reverse Drain Curent TRANSFER CHARACTERISTICS T Yos=07 Paes 8 ro AA o e Vas~Gate to Source Voltage DRAIN To SOURCE ON-sTATE BRAIN CURRENT ° 10 2 Ip-Drain Curent—A SOURCE To DRAIN DIODE FORWARD VOLTAGE Ped £ 0 Para ae Ose Vs ~Source to Oran Vltage—V FORWARD TRANSFER ADMITTANCE ve ORAIN CURRENT 8, DRAIN To SOURCE VOLTAGE ws Bare 'TO source VOLTAGE ° Tost) Tat i 5° 5 og = 100° ; 4 2 are £ | 2 3 a7 i 5 : 5 254 t g font 2 oar t 1 to d a ca 7 Ip~Drsin Curent-A Vos~Gate to Source Votage—V gare ro sounce curorr | omain ro source onsrare SarsAoE i Rederadee" > _SRkNNEL Fewmenatune 2 _ SnatnelVeXrenarune ; Boe i ToT 3 5, Rm) =f aR e | 2 5 Fo 8 2g oa a g 3 3 a s FT 3 s : ‘ ee so i 1 Teo Bey Channel Temperature"C Brey Channel Temperature" SouRnce VOLTAGE i= r 10 00 Vps~Orain to Souree Vatage—V SWITCHING CHARACTERISTICS 5 S oor or T 10 Ip —Drain Curent tony te toty Switching Times‘ i s 8 3 ae es 16 2 2 swironina Te esr cincurr 7 ies =" wave | | I veo. [Fo i 0 pa (A) «Rn toa 90 Oran '0 old} 10%, ere 0 Nine The de in tis ge faa spe 7 (aioe praise ose taco TEP eH Le me 5 else Duty Cyelest 2 GATE CHARGE TEST CIRCUIT e Te-a021 February 19808 Printed in Japan