NTP75N06, NTB75N06

Power MOSFET
75 Amps, 60 Volts, NChannel
TO220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge http://onsemi.com
circuits.
75 AMPERES, 60 VOLTS
Features
RDS(on) = 9.5 m

PbFree Packages are Available
NChannel
Typical Applications D

Power Supplies
Converters
Power Motor Controls G
Bridge Circuits
S
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Symbol Value Unit MARKING
DIAGRAMS
DraintoSource Voltage VDSS 60 Vdc
4
DraintoGate Voltage (RGS = 10 M
) VDGR 60 Vdc Drain
4
GatetoSource Voltage Vdc
Continuous VGS
20
NonRepetitive (tp10 ms) VGS
30
Drain Current TO220
75N06
Continuous @ TA = 25C ID 75 Adc CASE 221A
AYWW
Continuous @ TA = 100C ID 50 STYLE 5
Single Pulse (tp10 s) IDM 225 Apk
Total Power Dissipation @ TA = 25C PD 214 W 1 1 3
2 Gate Source
Derate above 25C 1.4 W/C 3
Total Power Dissipation @ TA = 25C 2.4 W 2
Drain
Operating and Storage Temperature Range TJ, Tstg 55 to C
+175 4
Drain
Single Pulse DraintoSource Avalanche EAS 844 mJ
Energy Starting TJ = 25C
4
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH D2PAK 75N06
IL(pk) = 75 A, VDS = 60 Vdc) CASE 418B AYWW
2 STYLE 2
Thermal Resistance C/W
JunctiontoCase RJC 0.7 3
JunctiontoAmbient RJA 62.5 2
1 3
Drain
Maximum Lead Temperature for Soldering TL 260 C Gate Source
Purposes, 1/8 from case for 10 seconds
75N06 = Device Code
Maximum ratings are those values beyond which device damage can occur. A = Assembly Location
Maximum ratings applied to the device are individual stress limit values (not Y = Year
normal operating conditions) and are not valid simultaneously. If these limits WW = Work Week
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

August, 2004 Rev. 2 NTP75N06/D
 NTP75N06, NTB75N06

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 1) V(BR)DSS Vdc
(VGS = 0 Vdc, ID = 250 Adc) 60 71
Temperature Coefficient (Positive) 73 mV/C
Zero Gate Voltage Drain Current IDSS Adc
(VDS = 60 Vdc, VGS = 0 Vdc) 10
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) 100
GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS 100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1) VGS(th) Vdc
(VDS = VGS, ID = 250 Adc) 2.0 2.8 4.0
Threshold Temperature Coefficient (Negative) 8.0 mV/C
Static DraintoSource OnResistance (Note 1) RDS(on) m

(VGS = 10 Vdc, ID = 37.5 Adc) 8.2 9.5

Static DraintoSource OnVoltage (Note 1) VDS(on) Vdc

(VGS = 10 Vdc, ID = 75 Adc) 0.72 0.86
(VGS = 10 Vdc, ID = 37.5 Adc, TJ = 150C) 0.63
Forward Transconductance (Note 1) (VDS = 15 Vdc, ID = 37.5 Adc) gFS 40.2 mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 3220 4510 pF
Output Capacitance (VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
Coss 1020 1430
f = 1.0 MHz)
Transfer Capacitance Crss 234 330

SWITCHING CHARACTERISTICS (Note 2)

TurnOn Delay Time td(on) 16 25 ns
Rise Time (VDD = 30 Vdc, ID = 75 Adc, tr 112 155
TurnOff Delay Time VGS = 10 Vdc, RG = 9.1
) (Note 1) td(off) 90 125
Fall Time tf 100 140
Gate Charge QT 92 130 nC
(VDS = 48 Vdc,
Vd ID = 75 Adc,
Ad
Q1 14
VGS = 10 Vdc) (Note 1)
Q2 44
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (IS = 75 Adc, VGS = 0 Vdc) (Note 1) VSD 1.0 1.1 Vdc
(IS = 75 Adc, VGS = 0 Vdc, TJ = 150C) 0.9
Reverse Recovery Time trr 77 ns
(IS = 75 Adc,
Ad VGS = 0 Vdc,
Vd
ta 49
dIS/dt = 100 A/s) (Note 1)
tb 28
Reverse Recovery Stored Charge QRR 0.16 C
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperatures.

http://onsemi.com
2
 NTP75N06, NTB75N06

160 160
VDS  10 V
140 VGS = 10 V VGS = 6.5 V 140
ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

120 120
VGS = 6 V
VGS = 7 V
100 100
VGS = 8 V
80 VGS = 5.5 V 80
VGS = 9 V
60 60

40 VGS = 5 V 40 TJ = 25C

20 20 TJ = 100C
VGS = 4.5 V TJ = 55C
0 0
0 1 2 3 4 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VDS, DRAINTOSOURCE VOLTAGE (V) VGS, GATETOSOURCE VOLTAGE (V)

Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAINTOSOURCE RESISTANCE (
)

RDS(on), DRAINTOSOURCE RESISTANCE (
)

0.015 0.015
VGS = 10 V VGS = 15 V
TJ = 100C
0.013 0.013
TJ = 100C
0.011 0.011

0.009 TJ = 25C 0.009 TJ = 25C

0.007 0.007
TJ = 55C
TJ = 55C
0.005 0.005

0.003 0.003
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 3. OnResistance vs. GatetoSource Figure 4. OnResistance vs. Drain Current and
Voltage Gate Voltage
RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)

2 10000
ID = 37.5 A VGS = 0 V
VGS = 10 V TJ = 150C
1.8

1.6
IDSS, LEAKAGE (nA)

1000
TJ = 125C
1.4

1.2
TJ = 100C
100
1

0.8

0.6 10
50 25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60
TJ, JUNCTION TEMPERATURE (C) VDS, DRAINTOSOURCE VOLTAGE (V)

Figure 5. OnResistance Variation with Figure 6. DraintoSource Leakage Current

Temperature vs. Voltage

http://onsemi.com
3
 NTP75N06, NTB75N06

VGS, GATETOSOURCE VOLTAGE (V)

10000 12
VDS = 0 V VGS = 0 V TJ = 25C
QT
10
8000
C, CAPACITANCE (pF)

Ciss VGS
8
6000 Q1
Crss 6 Q2
Ciss
4000
4
Coss
2000
2 ID = 75 A
Crss
TJ = 25C
0 0
10 5 VGS 0 VDS 5 10 15 20 25 0 10 20 30 40 50 60 70 80 90 100
GATETOSOURCE OR DRAINTOSOURCE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. GatetoSource and

DraintoSource Voltage vs. Total Charge

1000 80
VGS = 0 V
IS, SOURCE CURRENT (AMPS) 70 TJ = 25C

tf 60
100
t, TIME (ns)

tr 50

td(off) 40

30
10
td(on)
20
VDS = 30 V
ID = 75 A 10
VGS = 5 V
1 0
1 10 100 0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.86 0.92 0.96 1
RG, GATE RESISTANCE (
) VSD, SOURCETODRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variations Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
EAS, SINGLE PULSE DRAINTOSOURCE

1000 1000
VGS = 20 V ID = 75 A
SINGLE PULSE 10 s
ID, DRAIN CURRENT (AMPS)

AVALANCHE ENERGY (mJ)

TC = 25C 800

100
600
100 s
1 ms 400
10 10 ms
dc
RDS(on) LIMIT 200
THERMAL LIMIT
PACKAGE LIMIT
1 0
0.1 1 10 100 25 50 75 100 125 150 175
VDS, DRAINTOSOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

http://onsemi.com
4
 NTP75N06, NTB75N06

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

1.0
(NORMALIZED) D = 0.5

0.2

0.1
0.1 P(pk)
0.05 RJC(t) = r(t) RJC
D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN
0.01 t1 READ TIME AT t1
t2 TJ(pk) TC = P(pk) RJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.00001 0.0001 0.001 0.01 0.1 1.0 10
t, TIME (s)

Figure 13. Thermal Response

ORDERING INFORMATION
Device Package Shipping
NTP75N06 TO220 50 Units/Rail
NTP75N06G TO220 50 Units/Rail
(PbFree)

NTB75N06 D2PAK 50 Units/Rail

NTB75N06G D2PAK 50 Units/Rail
(PbFree)

NTB75N06T4 D2PAK 800 Tape & Reel

NTB75N06T4G D2PAK 800 Tape & Reel
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

http://onsemi.com
5
 NTP75N06, NTB75N06

PACKAGE DIMENSIONS

TO220
CASE 221A09
ISSUE AA

NOTES:
SEATING
T PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
T 3. DIMENSION Z DEFINES A ZONE WHERE ALL
S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
Q A DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U
C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L R L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
V J Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04

STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

http://onsemi.com
6
 NTP75N06, NTB75N06

PACKAGE DIMENSIONS

D2PAK
CASE 418B04
ISSUE J

C NOTES:
1. DIMENSIONING AND TOLERANCING
E PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V 3. 418B01 THRU 418B03 OBSOLETE,
B
W NEW STANDARD 418B04.
4
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
A B 0.380 0.405 9.65 10.29
S C 0.160 0.190 4.06 4.83
1 2 3 D 0.020 0.035 0.51 0.89
E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
T G 0.100 BSC 2.54 BSC
K H 0.080 0.110 2.03 2.79
SEATING W J 0.018 0.025 0.46 0.64
PLANE
G J K 0.090 0.110 2.29 2.79
L 0.052 0.072 1.32 1.83
H M 0.280 0.320 7.11 8.13
D 3 PL N 0.197 REF 5.00 REF
P 0.079 REF 2.00 REF
0.13 (0.005) M T B M
R 0.039 REF 0.99 REF
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
VARIABLE
CONFIGURATION
ZONE N P
R U
L L L

M M M

F F F

VIEW WW VIEW WW VIEW WW

1 2 3

SOLDERING FOOTPRINT*
8.38
0.33

10.66 1.016
5.08
0.42 0.04
0.20

3.05
0.12
17.02
0.67
SCALE 3:1 inches
mm 

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com
7
 NTP75N06, NTB75N06

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 850821312 USA
Phone: 4808297710 or 8003443860 Toll Free USA/Canada
Fax: 4808297709 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone: 81357733850
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.

http://onsemi.com NTP75N06/D
8