0258354 ADVANCED SEMICONDUCTOR ___———s82D 00039. «sD 72 9_ o SILICON sovancen senzconpuctor 82 ve oasaasy oooooas 2 TRANSISTORS MAXIMUM RATINGS ELECTRICAL CHARACTERISTIOS, f DEVICE es | 1 POLARITY BVero | BVoe | BVeoo | ih. | AMPS | Vee | Mae CASE 2N329A | PNP 50. 30 003 5 | °500 2N332° | NPN a | 20 9 | 001 5 4 Naa | NPN. 43 | (20 18 | 001 5 2N334 NPN 45 20 5 2N335— | NPN 4% | 2 5 2N%38 | NPN 4% | 2 3 2n337 | NPN 45 | 20 2 2N33B NPN 45 20 5 2N339 NPN 55 5 2N340 ‘NPN 85 85 2N3T NPN, 125 85 2nd _| NPN |_'6o_| 69 2Nv4s | NPN | 69 2ui7e | NPN ® | 2% 2uaro | NPN % | % 2navon | NPN x_| 30 2480 | NPN 45 | 4 2nason | NPN ® | & 2noat | NPN & | 2542 NPN 30 30. 20543 | NPN 50 [80 2N545 NPN 60 a 2N546 NPN 0 0 2NS47_| NPN 60_| 60 2N548 NPN 30 w” 2N49 | NPN & | & 2N550 NPN 30 30 oni0_| NPN | 6 o 2N656 NPN 60 60 2N657 ‘NPN 100 100 2N697 ‘NPN 60 40 2N687A | _ NN. o | % N89 | "NEN 120 | 80 2N6994 | NPN 120 80 2n7te” | NPN % | 3 2N703 NPN 25 25, ‘2N707 ‘NPN 56 2B aurora | NPN m | 2nr098 | NEN 0 | 2 aris | NN | 2nrzi_|~ PNP 0 | 35 oni | pNP oo | 3 2N722A | PNP 50. 3S 2N727_|_ PNP 2 | 20 2nrae | New 0 | 5 2N784A | NPN 40 a 2Ng17 ‘NPN 30 1S 30 | 15 Py Po 15 d 2nr070 | NPN 50.0 400 | 60 o 2N1132A) PNP 600 600 60 40 2N1132B) PNP. 600 600 70 4 2N1335 [NPN 800 300 120 90ADVANCED SENICoNDUCTOR 82 DEffo2sa3sy ooooo4o 3 | o 7-29-60) . Sina TRANSISTORS Po @ Temd5C MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS a t I \. waz No.__| POLARITY | WATTS amps | B¥e0 | BV | BVe0 | in. | anes | Ye _| sKHz | case a 120 90 4 10 030 10 a 7039 : eet] soe eae | ow ee OE |e 0d 8 Oe |b tm so__| so] wo | 3-| io | ‘0 | io | 7m | tose aaltepet Ope [ees | TO a | 120] 1m | 3 | 1 | ‘0 | | 7 | to9 so | ‘go | is | 5 | i | | i] fo | toe 050, Ey 25 3 30. 010 1 25 7039 Br xo se Toss oo | | | 15 | a | on | 6 | jo | tos ‘080 xo | | 13 | 4 | om] 6] 2% | 109 050 20 20 2 10 O01 6 20 7039 00 Wa 0 w| | 4 | 38 | ‘0 | 10] 230 | . to 500 45 30 4 30, 180 10 50 O39 500 | m | 4 | a | 0 | io | 20 | row 050 i & oO UOT o T Toss 050 xo| a] 2] % | om | 6] 4 | to 1.00 60 0 5 100 180 10 50 7039 3.00 60. 60. 3 45 1.00 5 1 ‘TO3 100 op} 2] 100, | oo | 2] 1 | 08 | 2% | 20 | 09 io | ao] 100 | 45 | 48 | ‘oe | 20 | 200 | tow 500, 0 | “| “3 | 7 | oo | ae | “70 | 1099 | 300-} er ed 0 wo | 5 | 5 | 0 | ‘00 | | wo | tos ouisor | NEN ‘00 & | 3] 5 | wo | cso | i | ‘bo | tos bNieis | _ NP 500 | so | 7 | “0 | 0 | io | to | to NPI T0 TO 7 30 a OT Ow TO 2N16138 ‘NPN 1.00 1. % 120 50 7 40 150 10 60 ‘O39 buir00 | NEN 50 | ft | 4 | 8 | 2 | co] 4 | -400 05 N71 NPN 800 1.00 5 50 7 100 150. 10 70 7039 NTA NEW 800 Tor 75 wr T 1 180 w T 03g QNI71B NPN & 4.00 120 50 7 100 150 10 710 TO39 burt | NPN vo | ‘o| | 6 | ‘0 | 20] 5] % | to air? | NBN so | 750_| 10 | wo | 8 | | 30] 3 | 6 | ro Sg a ca eee glee fe ef eee 2N1839 ‘NPN 600 300 4 20 45 12 100 10 90 7039 pureco | NN > | so | | % | “8 | i | aso] | 9 | 109 2N1893 NPN 800 500, 120 80 7 40 150, 10 50 7039 288] — APT 0) —| 50a] ata 800810385 airs | NBN > | 20 | io | o | 7 | % | ov | 5| o | tos 2N1974 ‘NPN 800 200 100 oO 7 36 001 5 50 7039 bhiore | _ NPN Paes | a 00 |ac100 | et |e tb alee leon] eas earaven Esto TB so 700 —}— 50 srs auioss | NPN Pea eso) ean] || as 8611p mol fee vol enon ee oeel|p eros Nios? | NEN so | 30 | | 3] 3 | m | ‘| 19) 4 | to 2N1968_ NPN 600 00 100. 45 5 20 001 5 40. 039 2x98] — APH 0 ae |g fea a es | lO a9 2N1990 ‘NPN 600 1,00 100 45 3 030 10 40 7039 2N1991, PNP 600 500 0 20 5 150 10 40 7039 2N2017- NPN 4.00. 41.00 60 60 8 50 200 10 10. 7039 TR 50} 88028 2N2041 ‘NPN 600 500 re B 4 30 20 6 2 ‘TO39 aya tN Paine Vetere) tot te 7a |e rel || cole |store Nat NPN 00 4.00 420 65. 7 40 180. 10. 60 TO39 NP 500 | o 0 200 10 T TO39 ‘2N2175 PNP 050 6 6 0 ou | 15 10 TO39 ‘080 6] 6 | 9 | a | is] i | to. 180 6] 6 | | mi is | 3 | tow10 0258354 ADVANCED SEMICONDIADVANCED SEMICONDUCTOR ‘SILICON TRANSISTORS Ta4-01 2 veBoeseass cocoo s MAXIMUM RATINGS ELECTRICAL CHARACTERISTION 9 a F 8 Bes|e88 2 88 aque NERY Beselese.E8- 38 ssagyssig essa sss 88a Ses: BBS SRESSSSS SEER SRE Bee solatalaiataia aRSg sage eee RRA SERRE) BB! ee ee ee ee ee eee ne nefon asa ronaloonelansa|aarel SSASVSIVVy,ADVANCED SEMICONDUCTOR a2 pe ozsaasu aooon%2 7 TW Gare —— TRANSISTORS > MAXIMUM RATINGS ELECTRICAL CHARAGTERISTIOS. | ie i ke Te ke MHZ NO. POLARITY WATTS: ‘AMPS. BVowo | BVx | BVeo | win. | AMPS *KHZ CASE nosis | Ne 3a 00) 60] 30 a] 360 —] 1018 bios | NPN ‘a so | 0 | wo | 5 | %| “Bo 0 | Tose bisa | NPN ‘30 so | 0 | 0 | 5 | | “to mm | Tole proees_|__ NPN 200 ao | | 3 | 5 | | 160 20 | Tos8 mnogo] NPN “850 300 | 100] a] 5 | 0 | 1.00 a0] 7088 mnesta | NPN ‘B50 300 | i | sm | 8 | | 100 x | to 2uzese1 | NPN 880 30 | io | om | 5] 2] to x» | To preset |_ NPN 380 300_| ‘so | o | 3 | | to 30__|_to89 PN2BSET NPN 30 3.00 oO a 5 00 TON w TOS puss] NN 880 30 | o | | 3] a] to w» | 109 zuoeee-1| NPN 380 30 | & | %@ | 8 | 2] 100 so | 1038 von |_NeN 00, too_| 6 | 3 | 5 | | oo jo0_|_ 1038 2NDBBE NPN 800 TOT ow a 5 Ti O10 TO TOS avasss | NPN 200 oo | 2 | & | 3] 2 | oo eo | to Nass | NPN ‘00 yo | o | | 7] x] ‘30 | Tos8 pNoess_|_ NPN 00 im_| 4 | 2% | 4 | m0] 100 400_|_ 1089 ‘uoasa | — NEN] 300 J 300 0] 01 | 400 —| 10383 2vz000 | NPN 200 doo | i | wm | 5 | %| to 0 || T0s8 Dyoeacn | PAP 360 20 |e | 2 | 43 | | oo a | T018 proend | PNP 300 s0o_|_ 6 | # | “3 | | ‘om 200__| 1039 soak | PP 207 00] 80 | a] 3] — or } 20] 8 2ypa0s | PNP 600 so | 6 | | 8 | 50 | ‘on 200 | Tos9 -2N2405A PNP 600 £00 60 60 5 100 001 200 To39 vows |_ PNP 400 0 _| 6 | o | 8 | | ‘om bo0__|_tot8 ‘BNA PNP 400° B00 oO BO —s ww DOT 200 Nour | PNP 400 so | o | @ | 5 | | ‘on 20 | 1018 2yoeora | PNP 200 so | o | w | 5 | 10 | ‘om mm | 108 pnoser|__ PNP 00 so_| > | | 4] (| ‘oo o0_|_ 1038 NPAT 00 ||] 3) 0 0] TOs onze | NEN 600 oo | oo | 2 | 5 | 1 | 80 | 1038 muses | NPN +00 ao | ws | oo | 8 | a] it | To88 2N2087 NPN 4.00 4.00 9% 80 7 5 2.00 30. 7039 500568 | — NENT 1 TO] 185100 2 a} 1088 pyzses | NPN 100 to] 3% | 9 | 7 | | 200 a | 108 -2N2990 ‘NPN 1.00 1.00 155 100 7 60 200 30 7039 araset_| NPN 200 roo_| ‘| ‘wo | 7 | | 200 30__| 1039 NP B00 TO a0 80 T 100 TOO [00 035 2N3020 ‘NPN 800 1.00 40 80 = 40 150. 80 7039 musos | NPN 00 to | i | @ | 7 | | ‘to 5 | 1038 uoss_|_ NN 00 ‘mo _| ‘| 4 | 5 | 50] ‘0 so | 1038 | Ter 4900} B | 300 31088 ausoss | NPN io | 10 | | 7 | 2| doo 25 103 diors | PNP $0 | 6 | 0 | 4] | O10 0 | 1018 ‘2N3081 PNP 600 70 50 6 30. 150 150 7039 [ner oO] wa] 0] 08 70} 1038 2N310B NPN 1.00 100 60 7 20 001 60 T039 2N3109 NPN 1.00 80 40, 7 oO 001 70 7039 bustto_|__NeN roo_| oo | @ | 7 | -2| ‘or a __| 1088 2BSTTa | NeW 80] 1805] 25 | or | a} —T088 miso | PNP to | too | to | 8 | a] ‘oo | 1089 buso05 | PNP too | 100 | 10 | 6 | 40] ‘om | Tos9 na206 | NPN soo | ‘3 |‘ | 6 | | 20 “30 108 | —ReN 200 a rs T ToS ausoto | NPN js0 | 100 | 1 | 8 | a5] 100 2 103 ausaos | PNP 10 | ‘0 | ‘4 | 6 | 70) 061 2 | 1039 2N3307 PNP 050 40 35 3 40. 002. 300 O18 ass -| FIP 0] 0] 1018 oysse5 | NPN soo | © | % | & | | ‘O10 bo | Tos 40 4) 50] ‘oo “0 | 10 0 4 | | oo 40_| to a 30 08 00 | 10780258354 ADVANCED SEMIC ADVANCED SEMICONDUCTOR -D T.IA.04 TRANSISTORS 2 de Poasaasy coooova s Pro Tae MARU RATINGS ELECTRICAL CHARACTERISTICS Device ‘ Ro | Pouaany | warts | patos | ove | ave | eve | afte | atlas | ve 219820 | APH 70 30] 8] 9] 9] wo] io | 2 brow | pw +90 su | 2 | a | 8] a] to | 3 yada | Pa 100 tm | 40 | 30 | 7) 4] bo | 5 zuscao |__ ten 100 too_| 300 | 20 | 7 | 40] to _| 10 Fc ir 100] 160] 140] 7] 20} 200] groua | New 00 aoe |eaete| ou eas lee mo eam | brows | New is ts | | & | 8] | 30 | 6 byowe |New is 730 | wo | | | %| 30 | 8 27] — NN 15 730|— 0-|— 8] — 3] —a0 | 500 ayoae | New us 73 | 10 | | | 4| 50 | & most | Pa a0 fo | "s| ‘| %| a] oo | 3 irwer | PNP 00 tof |e a0 | an 206) ae oi||eeta0l| teen ae PA 700 +0] —30-] 30-5 30} zroeo | NeW aves a) sleet) et || ell wate lee iroare | New 300 to | 3 | | 3] Sl om | a howe |__ PNP ‘eo ioo_| a | 0 | 48] ‘| 0 | 1 25095-] —PP— 00 10} 190-| a] a5} 00 2n408 | Rew 400 sw | i | io | “6 | a] 3m | to 99 | NPw +00 mo | tm | io | 8] sm] io | to 200 |_ NPN 100 ‘so_| 430 | is0 | 8 | “| cis0_| 10 sor} — HEN —| ——F.09 300 | “180-| 8-5} 900 | 1500 23505 | Ne Noe | eer} | eset peso) eae |eea|| io |e guosor | New tao | 30 | & | so | 8] oo] or | 3 bussio | _ New So0 so | | i | 8] | om | 0 Bast} TH 380 0-3) | ao | | | 5 | ol on | 4 am | & | 4% | 0] om} “to | 5 ia | | 9 | 6 i ‘0--3-] w 00 d/o) |feibe|e< 10 wo | o | 3] 68 3 mo | 0 | %| 5 0 a aaa lea T sw | a | oo | 5 1 so | a | 4] § i oo | | | 3 6 00 -|—20-] 15 Ps bea | els08 | ees ae 8 to | wo] ao |S 0 too_| io | fo | 8 10 Tale al ata irael 050 to | i | i | & 10 so | ‘5 | ‘3 | & fH soo | os | 3 | 4 i 00 | 8-6] a +300] so | 0 | a | § 0 so | | | 3 i0 so_| | 3 | 3 ia a a so | | o | 5 | m| on | 1 to | 0 | 8] 8] 4 fo | io roo | i | 6 | 8 | i0| tm | i %50-|— 0-30} 3] 500-8 so | | | 8| s| oo | w io | 9] | 7] | im | i So | 9% | oo | 7| | tm 500 S] ea 0 a ee to | 3] 2] 2] S| oe | 0 oo | 3 | %| ¢| S| ce | to 0-5] 0] 0} 0 oo | @ | | ¢| “ol te | to io | wo] | 7] Sl om |S 20 | wo | | 5] 3] |