IEEE SPONSORED 3rd INTERNATIONAL CONFERENCE ON ELECTRONICS AND COMMUNICATION SYSTEMS

(ICECS 2016)

Design of Ultra-Wideband Coaxial To Microstrip

Transition Models for Multilayer Substrates
Beeresha R S A M Khan Manjunatha Reddy H V
Research Scholar Professor General Manager
Department of Electronics Department of Electronics ICONDesignAutomation Pvt. Ltd
Mangalore University Mangalore University Bengaluru
Karnataka, India Karnataka, India Karnataka India

Abstract: This paper presents a novel coaxial to
microstriptransition design models for ultra wide
bandapplications. The models are designed using four different
interconnection approaches.Theselection among these circuit
interconnecting techniques depends upon the signal transition
bandwidth and physical geometric parameters of the transmission
line. The transition interconnection models are designed for
Multilayer Substrates since it supportsminiature designs and it is,
economical to design the modelsfor microwave applications using
this technique. The models are EM simulated and analyzed with
the help of scattering parameters (S-parameters) technique. The
observed resultssuggest that themodified tapered interconnection
model gives better results than other models. The simulated
results show that the design suits well for ultra-wideband
applications. The proposed noveldesign hasoperating frequency
from 1-50GHz with 1.88dB insertion loss.The design and
simulation is carried out using NI/AWR microwave office tool.
Keywords: Coaxial, Microstrip line, Reactive Resistance, SMA
Connector, Transition.
I. INTRODUCTION
The multilayer substrate technique provides the
manufacturervarious flexibilities like compactness, low cost
and high volume modules for wide range of rf/microwave
applications [1]. This technique allows the design of highly
integrated 3D modules with greater flexibility for the designer
[2].
Also thistechnique helps to realize passive components
such asresistor, capacitor and inductorwhich can be used to
increase functionality of the substrate material within a given
volume [3].The coaxial-to-microstrip transitions radiate part of
the incident wave especially when subjected to large values of
voltage standing wave ratio (VSWR). It was observed [4] that
the leaked power is proportional to the phase of the reflected
wave.
The signal transition takes place in horizontal and vertical
tracks (transmission lines) in multilayer circuits. The number
of tracks interconnection influencesthecircuit complexity
which affects the signal transition.The natural way to connect
the coaxial line to shielded microstrip line is to join the two
inner and outer conductors directly. There are chances
ofdiscontinuitythat may arise at the junction of
interconnect.This discontinuity will affect the impedance while
transmitting signal from coaxial to microstrip line. The result
978-1-4673-7832-1/16/$31.002016 IEEE
of this discontinuitywillincrease the insertion loss at the
intersect junction [5]. For this reason there is necessityof
suitable geometricinterconnectionto reduce the transition
losses.
In this paper we propose four different types of coaxial to
microstrip interconnecting methods for ultra-wide band (1to
50GHz) transition. The objectiveof this designistomatchthe
impedance between coaxial to microstrip line with proper
selection of geometric parameters like length (L), width (W)
and thickness (t) of the conductor based on the selected
substrate material.
The reduced taper diametertechnique isthe novelmethod
which gives better efficiency than other three
designapproachesmentionedin this paper.
The paper is organized as follows:section II presents the
transition model design fundamentals.In section III, design of
the models from coaxial to microstrip transmission lines are
explained. In section IV the simulated resultsof reduced taper
model interconnectionapproachesarecomparedwith others. In
section V, we summarize the obtained results.
II. DESIGN FUNDAMENTALS
In this section a brief introduction to the necessary
parameters to design a transition model for coaxial to
microstrip line is given and are as follows:
A. Coaxial Strip
The coaxial strip (also known as Sub-Miniature version
Aor SMA) isa planar transmission line used to transmit or
receive a signal in a specific bandwidth.The conventional
coaxial line supportssignaltransition modes like transverse
electric (TE) mode, transverse magnetic (TM) mode and
transverse electromagnetic (TEM) mode [6][7].
The coaxial line has a conductor strip at its center and is
surrounded by aninsulatedcoatingthathelps to avoid reflection
and scattering loss of the transmitting signal.
The SMA is a most popular microwave coaxial connector.
The figure 1 shows SMA coaxial transmission line. The
CoaxLen indicates the length of coaxial line, outer thick is an
insulating material surrounded by the conductor. The flange
thick is attached to the inner conductor and also gives

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mechanical support to the coaxial line. The designed SMA + 1 1 1
connector has 50 input impedance and supportsfor high = + (3)
2 2 12
bandwidth applications. 1 +
The SMACONFIG is a configurable SMA connector
model. Theconnector dimensions can be specified along with Where,
ground tab dimensions and contact pin type. - Relative dielectric constant.
w - Width of the conductor.
h- Height of dielectric.
C. Microstrip Taper
A tapered structure is a design with variable width (W2) at
one end and constantwidth(W1) at the other end of the strip.

Figure 1.Structure of the SMACONFIG

B. Microstrip Line
The microstrip line is most widely used planar transmission
line in the field of RF / Microwave applications [8].
Figure
3.Microstrip Taper

The figure 3 shows a microstrip with tapered structure. The

Figure 2.Microstrip line
The microstrip can be fabricated by using photo
lithographic technique and is easy to miniaturize and integrate
with passive and active devices [9][10]. The construction of
microstrip line is shown in Figure 2. A conductor of width W
is placed on the top layer on a dielectric material; t is the
thickness of the conductor, h-is the height of the dielectric.
The microstrip transmission line is used to transport
signals with relatively high frequency.Themicrostripline
supports quasi-TEM (Transfer Electro Magnetic) mode [11].
The width and thickness of microstrip line determines the
characteristic impedance of the transmission lines.
If the microstrip line dimension is known, then the
characteristic impedance ( ) is calculated using below
equations.
60 8 Figure 4.Two port networks represent input and output waveforms.
= ln( + ) 1(1)
4
120
=
1(2)
[ + 1.4 + 0.667 ln ( + 1.44)]
The microstrip lines can be designed using the effective
dielectric ( ) of the substrate is [10].
tapered microstrip line plays a major role to match the
impedance between the terminals. Theimpedance matching
helps to reduce parasitic effect associated with transmission
lines.The performance of the tapered structure is better if
compared with the transition models designed using the
techniques like open end, step, bend, and
junctionapproaches.This is due to the fact that the tapering
method avoids the step discontinuity at interconnects.
D. S-Parameters
The scattering parameters are used to measure the
efficiencyof the two port networks [12]. The two ports network
as shown in figure 4. This network has two ports; port1, which
has input voltage signal across a1and b1 terminals, and port 2
that has output voltage signal across a2 and b2 terminals.
This network can be analyzed using S-parameters, S11, S12,
S21 and S22, to measure losses in the network. These parameters
are calculated using the following equations [13].
1 = 11 1 + 12 2 4
2 = 21 1 + 22 2 4
The variables of these equations can be calculated in matrix
form as,

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 21 1
[ 1 ] = [ 11 ] [ ] 5
2 21 22 2
11 12
Where the scattering matrix is S = [ ]
21 22
The parameters 11 , 22 are reflection coefficients, and
12 , 21 , are transition coefficients [14].
Figure 5.3D Transition Model 1
Voltage and currents are represents as variables as given
below,
1 = (1 + 1 )6
2 = (2 + 2 )6

1 = (1 1 )6
1 = (2 2 )6
This two port network technology shows the incident, Figure 6.3D Mesh Structure of Coaxial to Microstrip
reflected and transmitted electromagnetic waves. The port 1
and port 2 is given by its S-parameters equivalent as [15][16]. B. Model 2
1 The model 2 shows the geometry of coaxial to microstrip
11 = Input reflection coefficient (Return loss) transition model. The width of the microstrip line is more than
1
1 the coaxial line compare to model 1.The figure 7 shows the 3D
12 = Reverse transition coefficient (Insertion loss) structure of the transition model 2.
2
2
21 = Forward transition coefficient (Insertion loss)
1
2
22 = Output reflection coefficient (Return loss)
2

E. Material for design

The ultra-wide band transition design is carried out by
choosing a suitable substrate material.TheRogers
RT/Duroid6035HTC substrate is used in our design. The Figure 7.3D Transition Model 2
feature of this material is that it has high thermal conductivity, C. Model 3
low loss tangent (0.0013), stable dielectric constant (3.6) and
standard thickness of 0.508mm [17]. It gives better efficiency Tapering is a variable impedance matching technique
in high power RF/Microwave amplifiers, couplers, combiners between two points in a model. The taper width is smaller
and power dividers in single or multilayer circuit design. towards the SMA connector than themicrostrip line. The figure
8 shows the tapering connections between the SMA connector
III. DESIGN OF TRANSITION MODELS to the microstrip lines. The figure 8 shows the EM simulated
The interconnectinglaunchers provide the transition between structure.
the transverse electro-magnetic (TEM) mode inside the coaxial
line and the quasi-TEM (QTEM) mode on the planar
transmission line [18]. The models are design in 3 layers. The
layer 1 and 3 is chosen with air as dielectric medium and layer
2 consists of RT/Duroid as dielectric material. The transition
pass band frequency is 1 to 50GHz. The design of the models
is briefly explained in the following subsections.
A. Model 1
The model 1 is designed by direct connection ofSMA strip
to microstriptransmission line.The SMA strip overlaps with
themicrostrip lines. All layers of the design areshown as 3D
structure in figure 5 and figure 6 shows the EM-mesh structure Figure 8.EM simulated Taper Inter Connection Model 3
of the transition between coaxial to microstrip line.

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D. Model 4
Figure 9EM simulatedReduced taper interconnection model 4
This model is designed using model 2, discussed above as a
reference,by fine tuning the width of the taper interconnection
to achieve better transition efficiency.The figure 9
showsreduced taper interconnection model 4. In this model the
tapering width is reduced near SMA connector and is
maintained constant at the microstrip line.
IV. RESULTS AND DISCUSSIONS
The design and analysis is done by using AWR Microwave
Office& Analyst v11 tool. Run on system, having Intel i5
processor, 4 GB RAM and 64-bit windows operating
The advantage of this model is that the signal is
transmitted without using external interconnects between
transmission lines.The model is designed by using multilayer
substrates. In layer two the microstrip line isplaced and is
connected to coaxial conductor.
The model 2 is designed by connectingmicrostrip end to
SMA connector. The discontinuity affects to increase transition
loss because of reactive resistance. The bandwidth of designed
model is 50GHz, but the observedresults shows bandwidth of
41.12GHz and an insertion loss is 8.28dB as shown in figure
11.
The drawback of this model is due to the step discontinuity
at the joining point of SMA connector and microstrip the
insertion loss is more. This discontinuity also affects the
impedance matching because of sudden change in microstrip
width. This problem can be overcome by using linear
impedance variable called microstrip taper.
DB(|S(1,1)|) DB(|S(2,1)|)
Incresesed Microstrip width Incresesed Microstrip width
Model 2
0
-10

software.Analyst is a full 3D Finite Element Method -20

(FEM)based Electromagnetic simulator widely used for all -30

RF/Microwave applications.
-40

Transitioning from cylindrical (coaxial) to planar -50

rectangular (microstrip) requires care, otherwise discontinuities 1 11 21 31
Frequency (GHz)
41 50

will yieldreturn loss and insertion loss [19]. To improve the

transition performance over a conventional transition models.
The model 1 gives bandwidth of 41GHz with 8.09dB
insertion loss shown in figure 10. In this model the microstrip
line is directlyoverlapped with the SMA connector.This results
in linear increase in signal insertion loss up to 41GHz beyond
which the insertion loss decreases abruptly. This band (41to
50GHz) is not suitable to transmit the signal.
Figure 11.Simulated Results of Model 2
The model 3 uses tapering interconnect between SMA
connector to microstrip for transition of signal in the frequency
range of 1 to 50GHz. The width of a taper is tunable to match
the impedance easily between two points. This design gives 1
to 41.22GHz pass band region and insertion loss of 8.22dB.

DB(|S(1,1)|) DB(|S(2,1)|) DB(|S(1,1)|) DB(|S(2,1)|)

50 ohm Microstrip 50 ohm Microstrip Strip Taper Strip Taper

Model 1 Model 3
0 0

-10 -10

-20
-20

-30
-30

-40
-40
1 11 21 31 41 50
Frequency (GHz)
-50
1 11 21 31 41 50
Frequency (GHz)

Figure 10.Simulated Results of Model 1

The geometric parameters of the microstrip linedo not
match with the transition of signal after 41GHz. The shunt
reactive resistance components will affect signal transition in
terms of insertion loss. The quality factor controls the reactive
resistance effect that arises. The increase in bandwidth
increases reactive resistance effect which in turn decreases the
Q-factor. After certain range the insertion loss becomes
nonlinearwhich makes the design not suitable to transit the
signal. It is possible to improve the efficiency of pass band by
changing interconnection technique.
Figure12.Simulated Results of Model 3
In figure 12 shows the response of the model 3. This
tapering interconnection method is better than the direct
connection microstrip transmission lines to SMA connectors.
This design provides an option to match the impedance
between two points by tapering the width of the
interconnection and thus helps to transmit signalswith low loss.
The model 4 is designed using model 3(tapering
interconnect) as a referenceof model 3. In this model the
diameter of tapering is reduced to adjust impedance and to

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reduce the insertion loss. The designed taper helps to transit the Model 1 Model 2 Model 3 Model 4
signal with low loss. This is a novel design for transition of 60
frequency range from 1to 50GHz as shown in figure 13.
40
DB(|S(1,1)|) DB(|S(2,1)|)
Reduce Strip Taper Dia Reduce Strip Taper Dia

Model 4
20
0

-10
0
-20
Bandwidth Insertion Loss Return Loss
-30

-40
Figure 16.Models transition Efficiency Comparision Chart

-50
1 11 21 31 41 50
V. CONCLUSION
Frequency (GHz)

The coaxial to microstrip transition models are designed

Figure 13.Simulated Results of Model 4 using different interconnection approaches. The resultsareas
summarised in table 1 and the corresponding plot is given
It gives very small linear changinginsertion loss of
below (Figure 16). The observed 3D EM-simulated results
1.4dB.This model gives better efficiency and broader
shows that model 4 gives better pass bandregion (1-50GHz)
bandwidth to transit the signal compare to the previous work
with a low insertion loss of 1.88dB. This work can be
[18]. This provides minimum impedance discontinuitywhen
implemented in super high frequency RADAR bands like X-
transitioning signal from a coaxial cable to a microstripline
band (8-12GHz), Ku-band (12 - 18GHz), K-band (18-
within a substrate. The combined insertion and return loss
26.5GHz), Ka-band (26.5-40GHz) and Q-band (30-50GHz)
comparison shown in figure 14 and 15.
component development that are widely used for satellite,
radar and mobile communication applications.It can also be
DB(|S(2,1)|) DB(|S(2,1)|) DB(|S(2,1)|) DB(|S(2,1)|)
Incresesed Microstrip width 50 ohm Microstrip Strip Taper Reduce Strip Taper Dia applied to multilayer, Low Temperature Co-fired Ceramics
0
Insertion Loss (LTCC) structures.
-2 ACKNOWLEDGMENT
-4
The authors would like to thank ICON design Automation
-6 Pvt Ltd Bangalore, for their help and guidance to carry out this
-8
work at their R&D lab.
-10
1 11 21 31 41 50
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