Chapter 9 ‘MOS Transistors scetees feat Smee Giqnlo Erebtemeonsioir 5‘he hl cceaonny an he rc ig eed The coin ‘an te ach wee donner A ela ete ac “Ame poine cae yi Wide ‘oon a alee nl eet en ge a gn ee ‘ste te ow her SB cdc a ta vane nd ‘sme ero te hc hig omc ch ec ‘nero chee oe °F ce Sone Tene che MOSFET °°) Te teh ge hee age he gene on ‘orton ue coco ot ct Nearest ae ha MOSFET An pe cha fret na pace chan MOSFET: A pope el feat a hays or te bonds mtn Te aes np 0d may ld nk eee phan toes a Rae ame T> 8 naa ty ce to > He 92 Structure of Power MOSFETS ‘coe ray 92 ies Ta {fess ah min Fe 9h nae MOS (= dt aes {rom IV opal nate edn rsa" Serco ees 639 Latoet tome ecg eran tact ere cee tem eh een ane ay age at ssa tpn hei te ha A an pn PB ‘ose ao ogame sr pee Teco ‘tbe ae sed we ec ins bec par wt ‘etapa tna soled MEAP cc “Teel BOS aed VMOS) vm lin ae ol npc Sees fe he aon a ee ‘MOS So termes hs ce mas whe ame ‘reat ge g2) Dueto ae seach eo te cc 1 ue ply toes ge 1008 93 Carren-Voltge Characteristics of MOS Transistors ge 97 hon cen mci he MOSFET The det ‘SSG kedty smc ag ru ptevg Vp teen alse hen an Ye son a tel ge Thing sag oe pees ee . sme he pe hee Sp ace rg Cat Ao ig Sh het coreroing: GancicsSmdr he rtp te a+ ie fru ving Oe sumac ‘Sincere nc Barong as Perr toe atgeVotecsas, ‘on neon "Re nse bene ceca enh nn aed ualtonuen Taegan oom shee94 Characerstes of the MOSFET Channel ete de eof em anne go apr al above ‘chant Toa ste psy ee eed ee ane en “Ti ult hee 100 The me pi ote midis "88S Hr eee Yo he ome sts ‘cite ans knoe teen 988 tees cue ty meh cab nape eae ‘fasintnoe ast e = ca-tlo—m on “Tac ig ht ca ale rect iar ei 2 Sat A pnb esha ere ee See ‘tess eh eel cap Fg. .)a W te tc hidh ct hg 0 Wu we ee a pe ae Frrhintecremtmeceti see mdeplay he css FE-05Heashoiysige Wi ed a a hal ‘cmc Wet meio wpe slip eo ‘Sat devoes Te pc cp ey a a (he os ‘ain 3) tr nn 97 at rh ni wih ste ae Sancti wpe scm te cn 4 (93) ca ens cl yt cr smi” S26 hat to toe ha Senay hyo ns ‘Fromme oe ha i fe ee hs whee pmb ‘Tirisinel Mostar ae pecansi ening cart ape ip) dep a te he aac aon Fi 93h Age nh be Sal ge Wy ‘Scorn en tense oth oe ie a vs) mo 0) = Ge eH Yo oo nase eta anes |wen ae on nut P98 i 7 iW mccioowewm ap he wae Vp ds babe iy) = Oy = Pesce rece green se-1 (00-10-48) ow SES a Stier ele eres om secon te trim ned 347 poy ‘Sheree emia ede hance fo=ve-m fac 04 fon ma. 19 cis in ‘noe tap Ina $00 | ow Rowman Acetate ini of ht a Fe-pucbentaecomattcomn nate ronnget 8 caer sg Ie age of asap “etna apart: 10) fn ames exo ow empty aed poe de sp ‘ep shyt aan fo coc at's pon sSbimsaiP arse sstmiyad te arma ap cars fore (em ve H (14 oe Tate ton deed the wes fe prj wi (10) The ‘eligi 1) amopans lug tny te dnaipe ses Sh ernin epapd weeny oman Foe 4 on(M) ow AYyieaproimaely 0.1 shige acl pig he pw cree rasa a eae = eae Spoon cree che g an 2s Sees baat ease me py Patan lee py pace ere | “Tere wen hemes ead rel sce a he soles: besa ease pe (She enna fo feces tral ep ts copra os oe sotecon nay eter te aves eae eo Irie cpaty scree ees nsec 0th pe fans psn Stn ne acs Poe ‘a ane fy ng wre Ro [opens yaar ‘techn ger 2 el pet ne typi MOSES sinc smi), Se Tees a en Seager ese een Ann! non ogee ‘Spot Deuenns ac otras anne Meagan soe IETS Neocron yor ec pd ‘elope we seer ne or ra ten itn ee ing rrestim peo onde ayer alate 613 Compe te oon nin ny tas Sehioummecmathatartain wis woasdapepese aes ‘alot henogonn eal ell dato em heap ee garantie mort {nett ste epee fhe Te ey a ‘Spon kag espn oun oars Ws nde Ss a scene tgs an nn sr ‘cm ima epigenetic ‘ret art teem Jimcon compensate {Ont} iene 814 spe he i eon fsa ‘ino cing Vl A emptor then even fe ma Sinn ut fr Wp Comes css he 7 re ng | iin . ioawteeee aunt gen E022, Dae whe sl ies oe ae rc ves ens dng yah ae ‘an eo ssn a P90 Soh 97 Switching Properties of the MOSFET ‘Stetina ine ere cers gh te shel sont Vout yi went om er ne wh f= 21, Ke = 1, y= SD Vw te ‘atoning = 10 pe Resa io oo he nsoate aps compe «power MOST since pi cap ‘oe ek ang tae Ss a me ng ejay 025 C= ax + Ci Ro = Ba # Rs ‘Go's we he ecommerce Ry a fl ni ston Tein etn aa fa ne mere ‘ees XN fate R= ant Se eae te no eee a ca te MOSFET wih peer ee ctogni teen i318 Ree oss anon oe ieroiancnaentereestreanas hatte inc 6 et ge eT ete te ‘act yes te hl ale Ys Rl Cen)a> ale + Ca, Date heen Sh then er ern et ‘pesediel sa Pee 2M oot Deg Re Ge a ‘reo etn ne (ete Pert Side shes oe wnat ore MOS dew Tecan Ci Mi yctane we ced ee Inierane Hematite ae othe Miler Yom Yeas “rg Vee le ermine 1 vam tae Fm 917 se he lt ai fan indie ba, Cr thier ae saa wo sear aneive ae eee fv hartot dtr asx ache wage espe Inch a whe on ttc oe wen atom ch Yo= Yr tran “pines Cent Co, eh he im ar ike sche ei 98 Fre eee k- Rlos Co) an ie “These mae abe hen By Te cet oie onset el ae eas ei tb pa ‘ibercamchoe Cp iste Sune ne Mpa teat eeston | Ca aloe ‘he cn Cx + Cap hed ne rn cen The ine cme opr mee tt hana eet ta es on Fx an n= aes is Insp spe note ap eae. Misco = eine wage, nk pnt ye ce he {atic nv gy ae a 8 — ta tap eH te de mney Y= iw +eThc wating eps af ad a ety a fe nun cence Weal een Sse sh oncg neces bee ek eos om Sahat eerie Stimeng ict eos ae ana beapaknas garmuteines es anon eee ea amnion orstotee 98 Switching Loses of the MOSFET ‘Temas ind ving lng apne MOSFET ded he ‘sig ve Testo psec bane an {ih i og se at Da tk sam frotsaine om apa ech epi et iMate i lees ee cal tp Kove ae aed ge As eup at WOEE gee Sa ‘ta fig 9 loeb nd wh mane =} -Ueohmd-a} Yelle Fam)m 030 STEELE ot ov oe ta oy a ay a= fete om 99 Sung ee te i canbe tte 917 wih am Piolo tb Metal foe 8) Phere f Mn Ba) a) ‘OSE face Mau nn ek of em ‘St bce ny mgd Themed ncn yee ‘Deing day ee date ie ener nid be MOSFET en ‘South rechig pul he omen ost feedal rng Pago 8 Petes Patha=dtaThe/ lim Ea) 6) ‘es es ie eed De i ag he fe vi. Te tna alonte ln re decrmmed yn contre ‘Sees til en ee Dut geo ip ‘Rese HOME YS GOW GT eed ecm emesad ae ane a amie ene 2. ‘Sib nccn te ated Chay he MOTE nt heed {ne poner som sane “he pal sich ty Soh ne ae eminent St Tes ‘Seat he rma Pn ean (3) a a ‘ig oc ee th sng eB 2 i tech ts tomer ya tines wich heen etre steht eps eel nln by mer tings ne a tea th ph hey erties wi eye in mcine eh ‘tte ocoocing a ne pe ee aa ‘gp een hase og pod sa 99 Sate Operating Area ofthe MOSFETthe cig rata ene sd yah pe se se Stee tte ib hgh te saute cele pa ssl cg pen ote jo as {uh Bennet nmi snd esc enn “Pe, hemi cin of te miro esa op Rita nc em ty ‘hy chong the lego see pon Sane Tinga pee thon as Sete tied ye ting wo nd te cng Te SON ce ‘tne ave tm nem 240 The Ivers Diode ofthe MOSFET ie 3 Concent rane espe yy ge Secretion ma te eh ctor quaker GP 8k Wo= 0) toe he anc nr ‘Srcrae rn tne thie atge Fn) secre oe “Te Most mamtnnnny te may eh nips ie ‘ere ghee ons psp caren el cs InComara scour Tartan pesca seen ‘Reamer ssa apn eed are te ome ow masque pen ep. et eo emt he {he arecotinion emer me ¥en Sc Hl he popes Sse hoarer mane he MOREY ‘8. MOSFET. comer coment cnn pl ee: te en Po ‘Sekine ei ona ee Dae te ote woo