IGBT

Development of MOSFET gate same

structure as in the MOSFET
p-n junction at the back-side
Same charge carrier conduction as in
bipolar transistior
High doped p+ substrat -> collector
Low doped n- epitaxylayer
p- cathode Emi*er
Hight doped n-island

n+pnp+ structure

MOS IGBT
 IGBT structure

Emitter

Collector
IGBT construction

Bipolar PNP-transistor

Collector

Emitter
IGBT, parasitic caps

Emitter

Collector
 IGBT function

A N-channel IGBT is a four layer semiconductor device which is controlled by a gate. It has a
generally homogeneous highly doped p-type substrate (n-channel IGBT) with a specially
designed pn junction on the back. On the substrate a lightly doped n-epitaxial layer is
applied, and then the p-cathode pans (highly doped) and highly doped n-type islands is
introduced by diffusion. Thus a n+pnp structure is made.
( P-channel IGBT having a corresponding p + npn + structure)
For function, the pn-junction of the IGBTs and gate are responsible. The results into a
Darlington circuit formed of an n-channel FET and a PNP transistor. The collector (in
relation to the emitter) is connected to a positive potential, so that the backside transition
barrier is the forward mode and not in the reverse blocking operation.
The forward operation can be divided into two main areas: blocking and cobnducting. As
long as the threshold voltage (gate-emitter voltage UGE) of the FET is not reached,
the IGBT is in the off mode. Until VGE reached VGE TH the IGBT starts to conduct. a
conducting n-channel is created Like in normal MIS field effect transistors below the gate in
the p-tub.
 IGBT function
This allows the electron transport from the emitter into the epitaxial layer.
Since the rear-side pn junction is connected in the forward direction, holes are injected
into the epitaxial layer from the p + substrate,
thereby creating a electron-hole plasma which provides the actual conduit.
This plasma has to be produced or removed at each switching action. The switching losses
are in general higher than in MOSFETs.
IGBT forward