BD135 / 137 / 139 NPN Epitaxial Silicon Transistor

August 2013

BD135 / 137 / 139

NPN Epitaxial Silicon Transistor

Features
Complement to BD136, BD138 and BD140 respectively

Applications
Medium Power Linear and Switching

1 TO-126
1. Emitter 2.Collector 3.Base

Ordering Information
Part Number Marking Package Packing Method
BD13516S BD135-16 Bulk
BD1356STU BD135-6
BD13510STU BD135-10
BD13516STU BD135-16 Rail
BD13716STU BD137-16
BD13710STU BD137-10
TO-126 3L
BD13716S BD137-16 Bulk
BD13916STU BD139-16 Rail
BD13910S BD139-10
Bulk
BD13916S BD139-16
BD1396STU BD139-6
Rail
BD13910STU BD139-10

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

BD135 / 137 / 139 Rev. 1.2.0 1
 BD135 / 137 / 139 Features
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted.
Symbol Parameter Value Units
BD135 45
VCBO Collector-Base Voltage BD137 60 V
BD139 80
BD135 45
VCEO
Collector-Emitter Voltage BD137 60 V
BD139 80
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 1.5 A
ICP Collector Current (Pulse) 3.0 A
IB Base Current 0.5 A
TC = 25C 12.5 W
PC Device Dissipation
TA = 25C 1.25 W
TJ Junction Temperature 150 C
TSTG Storage Temperature - 55 to +150 C

Electrical Characteristics
Values are at TC = 25C unless otherwise noted.

Symbol Parameter Test Condition Min. Typ. Max. Units

BD135 45
Collector-Emitter Sustaining
VCEO(sus) BD137 IC = 30 mA, IB = 0 60 V
Voltage
BD139 80
ICBO Collector Cut-off Current VCB = 30 V, IE = 0 0.1 A
IEBO Emitter Cut-off Current VEB = 5 V, IC = 0 10 A
hFE1 VCE = 2 V, IC = 5 mA 25
hFE2 DC Current Gain VCE = 2 V, IC = 0.5 A 25
hFE3 VCE = 2 V, IC = 150 mA 40 250
VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V
VBE(on) Base-Emitter On Voltage VCE = 2 V, IC = 0.5 A 1 V

hFE Classification
Classification 6 10 16
hFE3 40 ~ 100 63 ~ 160 100 ~ 250

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

BD135 / 137 / 139 Rev. 1.2.0 2
 BD135 / 137 / 139 Features
Typical Performance Characteristics

100 500
V CE = 2V

VCE(sat)[mV], SATURATION VOLTAGE

90 450

IC = 20 IB
80 400
hFE, DC CURRENT GAIN

70 350

IB
60

IC = 10
300

50 250

40 200

30 150

20 100

10 50

0 0
10 100 1000 1E-3 0.01 0.1 1 10

IC [mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage

1.1 10

1.0
VBE[V], BASE-EMITTER VOLTAGE

IC MAX. (Pulsed) 10us

t)
(sa
IC[A], COLLECTOR CURRENT

0.9 V BE 0 I B
1 IC MAX. (Continuous)
IC =

1m
0.8 100us

s
) 1
(on
V BE V
=5

DC
0.7
V CE
0.6

0.5
0.1
0.4

0.3

BD135
BD137
BD139
0.2

0.1 0.01
1E-3 0.01 0.1 1 10 1 10 100

IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area

20.0

17.5
PC[W], POWER DISSIPATION

15.0

12.5

10.0

7.5

5.0

2.5

0.0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

BD135 / 137 / 139 Rev. 1.2.0 3
 BD135 / 137 / 139 Features
Physical Dimensions

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Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO126AA.pdf.

For current tape and reel specifications, visit Fairchild Semiconductors online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO126AA_BK.pdf.

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

BD135 / 137 / 139 Rev. 1.2.0 4
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Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Not In Production
The datasheet is for reference information only.
Rev. I65

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