es MB ES393] 003253) 195 MM APX -_croduct specification PNP 4 GHz wideband transistor S 5Fas2 A N AMER PHILIPS/DISCRETE b5E D DESCRIPTION PINNING PNP transistor in a plastic SOT37 PIN DESCRIPTION ‘envelope, intended for use in UHF "i 3 applications such as broadband Code: Baan rial amplifiers (30 to 860 MHz) 1 [base and in microwave amplifiers such as 2 [emitter radar systems, spectrum analyzers 3 |coltector etc. The device offers a high transition u frequency and a low intermodulation distortion figure over a wide current range. NPN complement is BFRS6. ' Fig.1 SOT37. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS win. [ Tv. [MAX.| UNIT Vero | collector-emitter voltage ‘open base = [as |v ie DC collector current ee Se Pas {otal power dissipation up to T, =143 °C (note 1) =__ |= _|700_[mw Ds transition frequency l= —70 MA; Vog= 10 Vs [ee | one = 500 MHz ics Teedback capacitance [p= —10 MA; Vog=10Vit=1MHz[-_|13_|- [pF F noise figure |e = ~50 MA; Vee = -10V; — [375 [= [ae = 500 MHz; Z, = opt. Vo output voltage le=-50 MA; Ver =-10V; = soo [= [mv Fy = 75.2% fguqn = 493.25 MH2; d,,= -60 48 Note 1. Tis the temperature at the soldering point of the collector lead. November 1992 S77 Capability approved CECC 50 000 (issue 4), 1986Philips Semiconductors @™ 6653931 0031532 821 MMAPX Product specification PNP 4 GHz wideband transistor BFQ32 N AMER PHILIPS/DISCRETE BIE D LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER ‘CONDITIONS min. | Max. | UNIT Ven collector-base voltage ‘open emitter Smee | One| ¥, Veso | collector-emitter voltage ‘open base = [sv Vino ‘emitter-base voltage ‘open collector ee Ee ie DC collector current = __|=100_ [ma Tew peak collector current 1> 1 MHz =___|=150-_ [ma Pes ‘otal power dissipation up to, = 143°C (note 1) = [700 [mw [Tas storage temperature = [150_|*C Ty junction temperature = [ie [Pe THERMAL RESISTANCE ‘SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Raj | thermal resistance from junction to up to T, =143°G (note 1) 45 KW soldering point Note 1. T,is the temperature at the soldering point ofthe collector lead. CHARACTERISTICS T= 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. [MAX.| UNIT Toxo collector cut-off current Veg = 100 = |=__|=100 [na Tee DC current gain Ip= 70 MA; Vee = ~10V 20 [50_|- 5 transition frequency 1g = =70 MA; Vog = ~10 V5 4 [5 |- [exe f= 500 MHz o ‘collector capacitance Te=0; Vog= 10; ee ee o, ‘emitter capacitance e= 0; Vey = 0.5 V5 mee | 6m | Ste |e Ce feedback capacitance lo=1OMA;Vec=-10Vif=1MHz(- [13 |[- [pF F noise figure Te= -50 MA; Voe = 10 Vs = [375 |= [os f= 500 MHZ; Tana = 25 °C; Zp = opt. Gm maximum unilateral power gain [|= -60 MA; Vog = -10 Vi; = [a [= [we (note 1) f= 500 MHZ; Tyny = 25 °C Vo. output vollage note 2 = [500 [= [mv Notes ISP aB. 1. ys the maximum unilateral power gain, assuming Sis zero and Gy = 10 log 2. dy = ~60 AB; Ig = ~50 MA; Vog = ~10 V; Ry = 75 2; Tgp = 25° = 495.25 MHz; V,= Vo at d,, = -60 dB; Vi = Vo-6 dB; f, = 503.25 MHz; V, = Vo ~6 dB; f,= 505.25 MHz; measured at fp.g.9 = 498.25 MHz. November 1992 578 G-18.F) 0-15) Capability approved CECC 50 000 (issue 4), 1986,Philips Semiconductors MM 6653931 0033533 768 MMAPX__ Product specification PNP 4 GHz wideband transistor BFQ32 N AMER PHILIPS/DISCRETE BIE D Fig.2 intermodulation distortion test circuit. >) = cy = Prot oy Ore 00 0 feel 400 “ 200 2 ° ° ° 10 ° 100 gimay 20 Vog = ~10 V; T, = 25 °C. Fig.3 Power derating curve. Fig.4 DC current gain as a function of collector current. ‘November 1992 579 Capability approved CECC 50 000 (issue 4), 1986Philips Semiconductors MM 665393) 0033534 bTY MMAPX Product specication PNP 4 GHz wideband transistor BFQ32 N AMER PHILIPS/DISCRETE BoE D 7 merase . ss? ua ce if oF * 4 \ : LT lA 2 SSS 2 t ° ° ° © veg 00 ° = gem 100 lp = 0; f= 1 MHz; T,= 25°C. Veg = -10 V; f= 500 MHz; T; = 25 °C. Fig.5 Collector capacitance as a function of Fig.6 Transition frequency as a function of collector-base voltage. collector current. November 1992 580 Capability approved CECC 50 000 {issue 4), 1986