TOSHIBA TA8210AH/AL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8210AH, TA8210AL 20W BTLx2CH AUDIO POWER AMPLIFIER The thermal resistance 4j-T of TA8210AH, TAS210AL TABZIOAH package designed for low thermal resistance, has a high efficiency of heat radiation. ‘The temperature rise of chip can be reduced, and the influence from the degradation of the features due to v the temperature rise at the high output can also be wn { reduced. nm vl " This stereo audio power IC, designed for car audio use, Tl l : U Bens 2.00 has two built-in channels to reduce the characteristic difference between L and R channels. In addition, the functions of stand-by and muting, and a variety of protection circuits are involved. TAB2IOAL FEATURES © Low Thermal Resistance O-T =1.5°C/W (Infinite Heat Sink) HSIPI7-P-2.00 Weight © High Power HZIBTT-P-2 00 - 889 (Typ) Pour (1)=22W (Typ.)/Channel HSIP17-P-2.00 : 9.89 (Typ.) (ec =14.4V, f= 1kHz, THD = 10%, RL =40) Pour (2)= 19W (Typ.)/Channel (ec =13.2V, f= 1kHz, THD = 10%, RL =40) © Low Distortion Ratio : THD =0.04% (Typ.) (Vec=13.2V, f= 1kHz, PoyT=1W, RL. =40, Gy=50d8) 30mVyms (Typ.) (Vec=13.2V, RL=40, Gy 19,, BW = 20H2~20kH2) © Built-in Stand-by Function (With pin@ set @ LOW, power is turned OFF.) : Isg=1A (Typ.) © Low Noise : Vn 008, Rg © Builtin Muting Function (With pin set at LOW, power is turned OFF.) : V(Mute)=1V (Typ.) © Built-in Various Protection Circuits Protection circuits : Thermal Shut Down, over voltage, out-»V¢c short, out-»GND short and OUT- OUT Short. © Operating Supply Voltage : Vcc=9~18V OTORBA F conpmaly workman oe Se Gay 7 7 rd ie jes of Reece, Neer, emicoaacn, Seas ge ‘Tatton product, 10 absere sandsras of solely, and to avol akuatons in winch 9 malfunction fers t's TOSHIBA prodcc coud caune Seasons et eat rear fen oducts pecs Beata Keep i mind te precautions and’ conditons st fotki he ‘he prodacs deserted in ths dotament sre subject to foreign exchange and foreign vrade laws. CORPORATION for any inrngements cinta propery or eter cits gf te Wed pos Wich may reise orm Tue No Reese granted © She'itomaton contained here f tubject to change wehow nosee san COMPORATION OF tar 1998-05-15 1/11TOSHIBA TA8210AH/AL BLOCK DIAGRAM TAS210AH, TAB210AL (Gy = 50dB) Ove ouny sen eage 1) Mute sw PROTECTOR arg i eoeroh) wena swt oown | GE mY @rosle | snow enc acivewigh pay Gonecon F CAUTIONS AND APPLICATION METHOD (Description is made only on the single channel.) 1. Voltage gain adjustment ‘amp 3: FOWER Amp (at-Amp) ‘amp 4 POWER Amp (atm) aaa aK) ‘amp 3, Arp 42008 Fig. This IC has the amplifier construction as shown in Fig.1. The Pre-Amp (Amp 1) is provided to the primary stage, and the input voltage is amplified by the Flat Amps, Amp 3 and Amp 4 of each channel through the phase Amp (Amp 2). Since the input offset is prevented by Pre-Amp when Vcc is set to ON, this circuit can remarkably reduce the pop noise 1998-05-15 2/11TOSHIBA TA8210AH/AL The total closed loop gain Gy of this IC can be obtained by expression below when the closed loop voltage gain of Amp 1 is Gy Gy1 = 20809 oe (a8) a The closed loop voltage gain of POWER Amp, Amp 3 and Amp 4 is fixed at Gy3Gyg = 2048. Therefore, the total closed circuit voltage gain Gy is obtained through BTL connection by the expression below. sa Gy =Gy1 +6y3 +6 (48) 2 For example, when Rf=00, Gy is obtained by the expressions (1) and (2) as shown below. Gy524+20+6=50dB The voltage gain is reduced when Rf is increased. (Fig.2) With the voltage gain reduced, since (1) the oscillation stability is reduced, and (2) the pop noise changes when Vcc is set to ON, refer to the items 3 and 4 sal VOLTAGE GAN Gy (da ao mo 50k % FEEDBACK RESISTANCE. RF (Q) Fig.2 2. Stand-by SW function By means of controlling pin@ (Stand-by terminal) to High and Low, the power supply can be set to ON and OFF. The threshold voltage of pin@ is set at 2.1V (3Vge), and the Power Supply current is about 1//A (Typ.) at the on brower stand-by state. ry Van Pin@ contro! voltage : V (5B) CUTTING aRCUT stanp-sy | power | Visa) ON OFF o-2 OFF ON 3-Vcc_| __Fig.3 With pin@ set to High, Power is turned ON. ‘Advantage of stand-by SW (1) Since Vee can directly be controlled to ON/OFF by the microcomputer, the switching relay can be omitted. (2) Since the control current is microscopic, the switching relay of small current capacity is satisfactory for switching, 1998-05-15 3/11TOSHIBA TA8210AH/AL oo Gg Y (Conventional Method) ‘gral current capacity switch DIRECTLY FROM MICROCOMPUTER (Standby Switch Method) 3. Preventive measure against oscillation For preventing the oscillation, it is advisable to use C4, the condenser of polyester film having small characteristic fluctuation of the temperature and the frequency The resistance R to be series applied to C4 is effective for phase correction of high frequency, and improves the oscillation allowance. Since the oscillation allowance is varied according to the causes described below, perform the temperature test to check the oscillation allowance. (1) Voltage gain to be used (Gy Setting) (2) Capacity value of condenser (3) Kind of condenser (4) Layout of printed board In case of its use with the voltage gain Gy reduced or with the feedback amount increased, care must be taken because the phase-inversion is caused by the high frequency resulting in making the oscillation viably generated. 4, Input offset prevention circuit at Vec-sON Having the Pre-Amp (Amp 1) mounted on the primary stage, this IC contains the circuit for making the Amp 1 input voltage and the NF terminal voltage equipotential. Therefore, the offset voltage produced at the input stage is suppressed to prevent the pop noise at VccON. The capacity values of the input and NF condenser (C1 and C3) shall be set according to the gain to be used. (Reference) (A)At Gy=50dB (RF=01) Cy 4.7 pF, C= 47 uF (8) At Gy=40dB (Rf=4701) Cy =3.3pF, C= 33) 1998-05-15 4/11TOSHIBA TA8210AH/AL 5. Muting function Through setting pin@ (mute terminal) at about 1V or less, muting becomes possible The interval circuit of IC is shown in Fig.4. When pin® is set to LOW, Q1 and Q2 are turned to ON, the charge of the ripple condenser is discharged and the bias is cut. The mute amount of 60dB or over can be obtained. Since this muting function rapidly discharge the charge of the ripple filter capacitor of pin®, the pop noise is generated by the DC fluctuation of the bias section. Therefore, this muting function is not appropriate to the audio muting but it is effective in muting at VccON. Fig.4 Mute circuit 6. External part list and description RECOM- INFLUENCE, ou | MENDED | FEATURE SMALLER THAN TARGER THAN REMARKS VALUE RECOMMENDED VALUE | RECOMMENDED VALUE C1 | 47aF [oc Blocking [Related to pop noise at Vec>0N Related to gain Refer to item 4, Related to pop noise at VcCON. Determination of low cut-off frequency Feedback ate a HF | condenser oe QefLRE & | 20. [Ripple Time constant i small [Time constant is large 3 | reduction at VeCON or OFF. _|at Vec-ON or OFF. r iiabi ca | orze | Oxillation Made liable to Oscillation allowance. | Refer to item 3. prevention oscillate. For filtering power supply hum and ripple. cs | 1000. |Ripple filter | Large at using AC rectified power supply. Small at using DC power supply. Oscillation Oscillation allowance improved. prevention Noise Reduction 5 | 1000pF Refer to item 3, 1998-05-15 5/11TOSHIBA TA8210AH/AL MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC symBot | RATING | UNIT Peak Supply Voltage (0.25) | Vcc (surge) 30 Vv DC Supply Voltage Vec (Dc) 25 v Operating Supply Voltage | Veciope) 18 v Output Current (Peak) Toipeak) 9 a Power Dissipation Pp 50 Ww. (Operating Temperature Tope =30~85 | °C Storage Temperature Tag =55~150_| °C ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Voc =13.2V, RL=4M, f= 1kHz, Ta=25°O) TEST CHARACTERISTIC, symBol | ciR-| TEST CONDITION —_| MIN. | TYP. | MAX. | UNIT curr (Quiescent Supply Current Tecg_| — [Vin=0 —_ [120-250 ma Pout | — |Vec=144v, THD= 10% | — | 22] — Output Power Pout (2) | — [THD = 10% 16 | 19 w Total Harmonie Ditertion tao | — lpour=1w — loos} oa} % Voltage Gain Gy = = ae | 50] 52| 38 Rg=00, Output Noise Voltage Vno | — [59 soue~zoKtte — | 030 | 0.70 |mVems Ripple Rejection Ratio RR. - 40 | 5a 8 Input Resistance Rin = =| 30) — | ko (Output Offset Voltage Votfset_| — =o3 [0] 03] mv (Current at Stand-by State 'sB, = = = tT] 10 | za Rg = 6000, Cross Talk cr. — ree 0.775Vims (odsm| — | © 4B Stand-by OFF Pin® Control Voltage vse | — |‘pomer son) 25] — | vec} v ‘Mute>0N Pin® Control Voltage vomute) | — [power 00FF) — | 10} 20] v 1998-05-15 6/11TOSHIBA TA8210AH/AL TEST CIRCUIT TAS210AH, TAB210AL (Gy = 50dB) "S8 . (Pomeno) {THERMAL SHUT DOWN mY Eom stort acum civetign —- ay Gowen I 1998-05-15 7/11TOSHIBA TOTAL HARMON BETORTION THO. (6) TOTAL HARMONIC DSTORION THO. (4) OUTPUT NOSE VOLTAGE Yq (Vem) oma] oogl os] o a] w THD ~ Pour) t= ok Ce ‘OUTPUT POWER Four Cm THO - f 10 300 KRSM FREQUENCY # (2) Vno_- Rg eee 1320 wa 100300 RHO SIGNAL SOURCE RESISTANCE Ay (O) m0 “0k 100k VOLTAGE GAN Gy (8) TOTAL HARMON DETORTION THD. (8) IRPPLE REJECTION RATIO. RR. (4 TA8210AH/AL vo THD ~ Pouri2) | 603] Nas 810300 ‘ourPuT POWER Pour CH wf pen B10 BOK SCR OK ‘00k FREQUENCY fbi) RR -f Veen 32 pe (cao 1 Tk FREQueNcy t () 1998-05-15 8/11TOSHIBA RR ~ Rg TA8210AH/AL crf an vecn20 é a aaa frp 00 g 3 2 3 ae 3 eae ak SAL SOURCE RESSTANCE Ay () inequiner on) Iecq = Vee 2 Pp - Pour «a weenie i 2 0 a 2 Dua Ope. = rt : 132 2 \ zo 5 7 = > g e 2 “op £ z a a) a suey vouract Vee 00 uur romen Four ‘m/eh Pp - ta PD MAX. ~ Vee zw Te HEAT an gy TW Heat Sk ous9 $000 ro ne RascaRans=sterw No HEAT SINK Ra 25°C POWER DISPATION POW AMBIENT TEMPERATURE Te) oa] SUPPLY VOLTAGE Voc 1998-05-15 9/77TOSHIBA TA8210AH/AL OUTLINE DRAWING HZIP17-P-2.00 Unit : mm. ——_ fi 170103 Vi 3992 10.010.3, | 5010.3 25751¥P 2.01, 0.5540.1 194 BOA] 41.2204 0.4 Bhs SeELeLEny 1 7 Bt Weight : 9.89 (Typ.) 7998-05-15 10/11TOSHIBA TA8210AH/AL OUTLINE DRAWING HSIP17-P-2.00 Unit : mm none 2023 >. a Rs Z i ° 2.5751YP 2.0T¥P, 0434s ss seae 1 7 Weight : 9.89 (Typ.) 7998-05-15 11/11