Q.1. Consider the circuit shown in the figure Dy = @ eT yn «gs Ati 20008 The diodes in the circuit are silicon diodes with V, = 0.7 (cutin voltage). The circuit was operated at different values of E, for E = 1.0 V current. Iwas 1, for E= 1.4V current was J,, for E= 2.0 V current /was J, Which of the following option is correct. (@) 1, = 0.033 mA, f, = 0.078 mA, 1,= 0.107 mA (©) 1, = 0.033 mA, I, = 0.078 mA, 1,= 0.146 mA ©) 1, = 0.033 mA, J, = infinity, 1,2 0.212mA (9) 1,= 0.033 mA, I= OMA, f= 0.104mA Q2 Consider the circuit shown in the figure. 16V =i All the diodes are identical, having 0.7 V drop and y = 1. Design the circuit such that Vo changes by 40 mV per 1 mA of load current (J,). The value of Ris (@) 122ka (0) 5.16 ka (0) 4.8 ka (@) 84k6 Consider the circuitshown infigure Re ae t me Weg 10, Re = 5009. R= 1000, hy = B= 100,Flg= TOKN, Vag # 07 V. Vorien™ (0, The min vai of Ugg such tat tho re @ 3K We ° © | Q.25 Consider the circuit shown inthe figure. The transistor parameter ar@ Voy = 2 V. Ky = Kg # 0.25 MANE, Kg = 0.10 mAV? and ‘aa, ® 0 iced] sv ead a Vs ot ete 7 The value of fy and /pis (2) 13mA,3.9ma (©) 1.85 mA, 4.05 mA (©) 1.4mA, 420 mA (©) 1.45 mA, 4.35 ma .Q.27 The circuit shown in figure (a) is excited by the input waveform shown in figure (b).‘Assuming tha altho components are ideal, the output waveform can be shown by : (6) None of these Q.30 The circuit shown in the figure is an example Q.28For the common collector ampiier shown inthe figure, he BUT has high B, negligible Veeieay 89d Vag = 0.7 V. The maximum undistorted peak-to-peak output voltage v, (in Volts) is Yoon #12V (@) series - shunt feedback (0) shunt- series feedback (©) seties- series feedback (@)_shunt- shunt feedbackQ.1. Consider the following circuit R R y me Vso-4W e R on A os 4 i“ Low, % The correct relation between V, and V,, V>, Vg, Va Vs is (@) Vo= -V,-V2-V3-Va-V5 (b) Vo = -V,-2V,-V5-4V,-Vg (©) Vo= V, +2V; +3V5-2V,-3V, (d) Vos V, +Vq2 +V4/3 -Vy/2 -Ve3@.4. Consider the circuit with idea! diodes o ‘The voltage across diode D,(V,) is (2) Vp-Vq 008 0t (0) Vig COS a= Vg (0) Vm (2) V,,c08 at Q5 Consider the circuit shown in figure sv 18v Vy 30000 a 000% ‘00 |: aa @ 100A Alte transistors have B = ©, 290 Veescie = 07 forr-p-n BJTQ, and Q,, Te transistor Q, and Q, are exactly same, the only ilference is that cross-section area of Q, = 100 times the cross-section area of Q,. Q, and Q, are p-n-p BIT the cross- section area of, is equal to cross-section area of Q, that is equal 10 1000 times the cross-section area of Q, ‘The value of Lis (0) 476A (9 476A (b) 04768 (6) 0.04764 Q.7 Consider the circuit [shown in figure], the ode in the circut isin reverse bias, The reverse bias leakage current of di0de is ly and 1, increases with increase in temperature.‘The temperature costicont of teakage curentisO.11%FCand ig Sy Thevalve (fF so that the temperature dependence AALS OOTKIC is 2.9 Determine the typeof fiter designed by the ‘opamp circu given below (©) Low pass titer (@) Band stop iter oy (@) High pass fit (@ 3540 ©) 6540 (© Band pass titer (© Sse0ke isnic 2.107wo mene stabi postive edge tiggered 8 Considertheczcut shown inthe gue rmutivibrater, are connected as shown in 2 oF ¢ -Assumathat tbe dodes D, and D,areicea ‘To Wanslercharactrsteof te veut wil be The M, mutiviortarhave two Inputs, itcen be tiggered by the postive edge of any inp. ‘The M, and M, when tiggered produces an outputs. apuise of wath 201s and 40ne respectively, and they have propagation delay of Ons and 3s. Att = O both the ‘mutator aro cleared, and att = the M, lstrggeredby vy, hown igure) CO ‘The wavetorm a output is ©° | 1 is tie Ye \ © 0.11 Consider the circuit given in the figure, the cutoff frequency and the type of fiter is 10%0 tox0 ol ¥ & Ply, “Ti le | IR, = 10 9, C,= O.tHF, A, = 20 ka, C,=0.2F] (2) Low pass tite, 159 He (©) High pass fiter, 159 Hz (©) Low pass finer, 39.78 He (©) High pass titer, 39.78 He