BJT

IC

IB IE

I c = I b Ic = Ie
+1
VBE = 0.7V = gain

FET

IDS = Kn(VGS Vtn)2

Vtn , Kn = device parameters
 R2 (R5 + R7 )
R2 e =
R2 + R5 + R7
E=
(R1R3e R2e R4 ) V R3 (R6 + R8 )
R3e =
(R1 + R2e )(R3e + R4 ) R3 + R6 + R8
 k 1 k
a = x f N =
m 2 m

R = R0 [1 + (T T0 ) ]
Ro resistance at reference temperature
calibration constant
To reference temperature

Power dissipated in circuit

P
Temperature rise due
to self heating
T =
PD
Dissipation constant