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    solar

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    Us 20120325282 a 1

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    solar

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
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    2 views12 pages

    Us 20120325282 A 1

    Uploaded by

    Monarch J Parmar
    solar

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
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    INN 000 cu») United States cz) Patent Application Publication — co) Pub. No.: US 2012/0325282 Al Snow et al. (43) Pub. Date: Dee. 27, 2012 6 WIRE Publication Classification GI) Ince OIL 31/8 2006.01) (78) Inventors: Richard Snow, Redwood City, CA (US) Hee one on Lee, San Jose, CA (US): Burak (5) US. Cl. 136/246; 439/67; 257/831.11 Metin, San Jose, CA (US), Serkam Erdem, San Jose, CA (US): Anju 6 ABSTRACT A plurity of sola cell is connected together ina shingled Fashion, Fach of the solr cells includes grid wires tht are attached oan electodeof the soar cello aso receive charge Carnes produced when photons are absorbed by the solar col, The grid wires are then interconnected with adjacent 7 : Sola cells when the solr cells are shingled together. The grid ee ‘Wires may be applied 1 the sola cells Via laminate and the rid wires may be achieved (73) Assignee electrical interconnection of th (22) Filed: Jun, 24, 2011 by the use of a conductive epoxy ae Veuve every / Se 1 J if Patent Application Publication Dec. 27, 2012 Sheet 1 of S US 2012/0325282 Al 4 Vad Nbbbbebbdbegaad LK ( YIM Ie FIG. 1 ae r Ss a ve FG. 2 » ao 9 Patent Application Publication Dee. 27, 2012 Sheet 2 of US 2012/0325282 Al { a z f HG4% a L FIG. 3D 1G. 3E Patent Application Publication Dee. 27, 2012 Sheet 3 of US 2012/0325282 Al Carr Fim Inorganic cide Adnesve layer Miero-wires Cari Fim {Inorganic oxide Adhesive ayer Mro-wres Patent Application Publication Dee. 27, 2012 Sheet 4 of S US 2012/0325282 Al 4G. 7A 4G. 7B Dec. 27, 2012 Sheet 5 of 5 US 2012/0325282 Al Patent Application Publication US 2012/0325282 Al SOLAR CELLS WITH GRID WIRE INTERCONNECTIONS BACKGROUND OF THE INVENTION [0001] 1. Field ofthe invention 10002] The present invention relates to solar cells and, in particular, concemts CIGS based solar cells that are intercon- ‘ected with each other using grid wire sirutures [0003] 2. Description of the Retated An 10003} Solar cell are photovoltaic (PV) devices that eon- vert sunlight directly inte electrical energy. Solar cells canbe based on erystaline silicon or thn films of various semicon- ‘ductor materials, that are usually deposited on low-cost sub- strates, suc as glass, plastic, or stainless steel. 10005] Thin film based photovoltaic cells, sue as amor phous silicon, cadmium teuride, copper indium diselenide ‘or copper indium gallium diselenide based solar eels, offer improved cost advantages by employing deposition tech- nigues widely used in the thin film industry. Group IBIULA- VIA compound photovoltaic cell, including copper indium zallium diselenide (CIGS) based solar eells, have demo Strate the greatest potential for high performance, high ef ‘ciency, and low cos thin film PV products. 0006] As illustrated in FIG. 1, a conventional Group IBIL- TAVIA compound soar cell 10 can be built ona substate 11 that can bea sheet of glass a sheet of metal, an insulating fil ‘orweh,oraconductive fol or web. A contact layer 12 suchas ‘amolybdenum (Mo) film is deposited on the substrate asthe back electrode of the solar cell. An absorber thin film 14 including & material in the fanily of Cu(ln,Ga)S.Se),. is formed on the conductive Mo film. The substrate Hand the ‘contat layer 12 form abase layer 13. Although there areother methods, Cu(In.Gay(S.Se), type compound thin films are ‘ypieally formed by a two-stage process where the eompo- nents (components being Cu, In, Gs, Se and S) ofthe Cun, GaySSe), material are frst deposited onto the subsite oF the contact layer formed on the substrate as an absorber precursor, and are then reacted with S andlor Se i & high temperature annealing process 10007] After the absorber film 14 is formed, a transparent layer 15, for example, CaS film, a 200 fil, a TO. aCdS/Z90/110 flmstack, is Formed onthe absorber fil 14. ight enters the solar cell 10 dough the transparent layer 1 inthe direction ofthe strows 16, The preferrod electrical ype ‘oftheabsorber fim is p-type. and the prefered electrical pe fof the transparent layer is n-type. However, an n-type absorber and paype window layer can also be formed. The above described conventional device structure is called 2 ‘ubstrate-ype striture ln the substrate-type strctre light ‘enters the device frm the transparent layer side as shown in FIG. 1. 4 so called superstrate-type structure can also be formed by depositing @ transparent conductive layer on @ ‘eansparent superstate such a glass or transparent polymeric fl and then depositing the Cu(ln,Gay(S.S2), absorber film, ‘and finally forming an ohmic contact to the device by 3 ‘conductive layer. Inthe superstrate-fype siucture light enters the device from the transparent superstate side 10008] Typically, there is aso a busbar or patern of con- ‘ductive grdding that is formed on the upper surface ofthe absorber which gathers the change eatrers generated by the absorber. This busbar or conductive grding is deposited or formed using well-known techniques and can represent 2 significant portion of the total cost of the solar cell. For ‘example, silver ink is offen used for screenprinting the eid Dee. 27, 2012 ing and this can represent a significant portion ofthe overall cost ofa solar module. Also, the gridding material directly shadows the solar cell below so sniller dimensioned wiees ‘eanslates directly into greater photocurrent. Further, ifthe busbar or condoetive gridding is deposited or pattemed poorly on the solar cell, the entre sola cell may not function asdesired and will have o be removes. Hence, there isa need in solar cells, such as CIGS solar cells, for beter ways of {orming electical conductors onthe solar ces to collect the charge carriers fonned by photons being absorbed by the absorber. 0009} Further, in standard CIGS as well as amorphous Si ‘module technologies, the solur cells can be manufactured on Hlexible conductive substrates such as stainless stool foil sub- strates. Due to its Mexibily, a stainless ste! substrate allows low cost rll-to-oll soar cell manufacturing techniques, In stich soarcells bulton conductive subsrates, the transparent layer and the conduetve substrate form the opposite poles of the solar cells. Multiple soar cells can be electrically inter ‘connected by stringing or shingling methods tht establish electrical connection between the opposite poles ofthe solar cals. Such interconnected solar eels are then packaged in protective packages to form solar modules or panels. Many ‘oli ean also be combined to form large solar panels. The solar modules are constructed using various packaging mate- ‘als to mechanically support and protec the solar cells con- ‘ained in the packaging apainst mechanical damage. Each ‘module typically includes multiple solar cells which are elec- ‘cally connected to one another using the above mentioned stringing or shingling intereonnection method. [0010] In standard silicon, CIGS and amorphous silicon cells that are fabricated on conductive subsitates such as aluminumor stainless ste! fils, the solar cells are not depos ited or formest on the protective sheet Such solar cells are separately manufactored, and the mantfactured solarcells are electrically interconnected by a stringing or shingling process to fonm solar ell circuits. Inthe stringing or singling pro- cess, the (+) terminal of one cell is typically electrically connected tothe ~)terminal of the adjacent sola cell For the Group IBITTAVIA compound solar cell shown in FIG. 1. ifthe substrate 11 is a conductive material such as a metalic fi, the substrate, which forms the bottom contat of the cell, ‘becomes the (+) terminal ofthe solar cel. The metalic grid (not shown) deposited on the tansparent layer 15 isthe Top ‘ntact ofthe device and becomes the (~)teminal of the cel. ‘When interconnected by a shingling proces, individual solar cellsareplaced in astaggered manner so tata bottom surface ‘of one etl, ie. the (+) terminal, makes direct physical and electrical contact toa top surface, ie. the (-) tenia, of an adjacent coll. Therefore, there ine gap between two shingled cells. Stringing is typically done by placing the cells side by side with a small gap between them and using conductive ‘wires or ribbons thit connect the (4 terminal fone cellto the (©)teminal of an adjacent cell. Solar cell strings obtained by Stinging or shingling individual solar cells are intereon- nected to form eireuits. Cireuits may then be packaged in protective packages to form modules. Fach module typieally ‘includes a phrality of strings of soar cells which are ele cally connected 10 one another. [011] Efficiear packing of cells within the module is an {important contributor othe power ofthe module, and i ing the ares of the module without cell coverage is desirable Shingling the ces to constrict the string allows fora higher power module, For example, ifthe eel length is 30-40 mm (a US 2012/0325282 Al ‘common eel ength for shingle ells) and there is 2 mm gap between cells, the module power would be 5% less han ithe ‘ells were shingled, with no space between the cell, [0012] Conversely singling cells ake up extra cell mate- Fial because there willbe some area where the cals overlap. ‘Thecell soften the largest cost contributor within a module. Ifthe bottom cell has 0 pass current tothe top eell hough this overlap area several mm are generally euired fra ow resistance contact of conductive adhesive 10013] And soitis desirable to shingle cells withthe small- ‘est possible overlap. 10014) Shingling and stringing inthis manner ean, how- ‘ever, be complex and expensive as specialized components may have to be formed on the solar cells to ficiltate such Jmereonneetion. More specifically, interconnecting portions ‘ofthe busbar and conductive gridding on one solar cell tothe substrate on another solar call can be complex and require ‘aditional processing steps. Hence, there isa needto simplify the connection between solar cells in shingling or stringing applications. SUMMARY OF THE INVENTION [0015] The aforementioned needs are satisfied by at least ‘one embodiment af the present invention which comprises an ‘assembly of solar cells that includes fist solar cell having 9 first electode and second electrode and defining fist and ‘a second side and firs and a second edge, ment, the assembly also includes a second soar cell having & fist electrode and second electode and defining first and asocond side anda first anda second edge wherein s portion ‘of the second side of the second solar cell adjacent the firs ‘edge is positioned at an interface adjacent portion a the ist side ofthe first sola cell adjacent the second edge ofthe frst Solar cell In this embodiment, the assembly also includes 2 first plurality of grid wires that are disposed on the fist surface ofthe fist solar cell and electrically connected to the fist electrode ofthe fist solar eell so as to collet change ‘carriers generated from the absorption of Tight by the fist solar ell wherein the first plurality of grid wires ar electe- cally connected tothe second electrode ofthe second sola ‘ell s0 as to electrically connect the first and second solae cells. The fist and second cells can he shingled with the ‘smallest possible overlap because the current isnot passed from onc cel tothe next through the overlap ara, its passed though the contact wires. The only imitation on the overlap ‘dimension isthe accuracy of Une equipment placing the cells [0016] - Shingling with contact wires is also more mechani- cally robust towanls handling than 2 traditional shingle base, in a traditional shingle the overlap area provides both the electrical and mechanical coancetion, wheress with ‘contact wire shingle the electrical connections provided by the wires and the mechanical connection by the dielectric film, Also, the wires ean extend the length of the cells and provide a larger area for electrical connection to lower the ‘contact resistance while being robust towards local physical dislocations 10017] With he contact wire approach a dielectric film ea ‘cover the entireoverlaparea, The dielectric film protects cell, Jom seraping against another eell and causing shunting or rmchanieal Wea. [0018] The aforementioned needs are also satisfied by ‘another embodiment of the present invention which com- prises a method of interconnecting a plurality of sola cells ‘each having a fst and second surface anda fist and second, Dee. 27, 2012 ‘edge Jn this embodiment, the method comprises ()) position. ing grid wires ona first surface ofthe plurality of solarcells 30 that the prid wires collect charge earsiers produced by th sola eels response o thesolarcellsabsorbing photons positioning a portion ofthe sevond surface of one solar cell ‘adjacent the first edge of one solar cell ediacent the frst surlace of another solar cll accent the second edge ofthe ‘ther solar cellataninterfaceso that the plurality of gr wires of the ather solar cll eletrcally contact the one soar cell; and (i) repeating the positioning of act (i) until a shingled Aanray of electrically connected solar eels is formed. [019] These and other objects and advantages of the present invention will become more apparent from the fol Jowing description take in conjunetion withthe accompany ing drawings BRIEF DESCRIPTION OP THE DRAWINGS. [0020] FIG. 1 isa schematic side view of atin film solar cell incIndig a Group IBITLAVLA compound absorber layer: [0021] FIG. 2 isa simplified isometric view ofa thin film solar cell that has u plurality of grid wire extending there- from; [0022] FIG. 3A isatop view ofa plurality of thin fla solar cells of FIG. 2that have been attached to each other by grid [0023] FIG. 3B isabowom view ofthe plurality of thin lm sola cells of FIG. 3A; [0024] FIG. 3C is a top perspective view of another embodiment ofa of a tin fl solar eel similar to the solar cells of FIG. 2; [0028] FIG. 3D isa side view of the thin film solar cell of FIG. 3c, [0026] FIG, 3B isa side view of plurality of thin lm solar cells of FIGS, 3C and 3D as they are shingled together [0027] FIG. 4 is top view of another implementation of a plurality of thin film solar cells of FIG. 2 that have boea Interconnected together by grid wires; [0028] FIGS. 8A and §B are side schematic views of a Jaminat that may bo used to attach plurality of grid wires v0 the thin film solar cells of FIG. 2; [0029] FIG. 6isa side schematic view of a portion ofa thin Iilm solar cell where the laminate of FIGS. 5A and SB is attached to an electrode of the thi film solar cell [0030] FIGS, 7A and 7B are schematic top and bottom views of one embodiment athe laminate of FIGS. 5A and SB illustrating through holes extending though the laminate to permit electrical connection w the grid wies for intereonnee: ‘ion of diferent solar cells; and [0031] FIGS. 8A.8C are progressive top and sectional views of one embodiment of the laminate of FIGS. 7A and7B fas itis used (o interconnect wo solar cells via a shingling process DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT [0032] Reference will now be made to the drowings ‘wherein like numerals refer to like parts throughout. Refer ring t0 FIG. 2, solar cell 20 with an upper surface 21 is shown. The upper surface 21 may comprise an anode or a tathode ofthe solar cell 20, As is alsa shown, a plurality of arid wires 22 is couple to the surface 21 in such a way that US 2012/0325282 Al ‘change caerers generated by the absorption of photons ito the solr cell 20 will be collected and provided tthe prlity ‘of grid wires 22 10033] In one embodiment, the gid wires 22 comprise naow wes that havea ew electrical esistvity coating that allows for electrical connoction toa tuaspareht conductive layer 15 or transparent conductive oxide (1CO) (FIG. 1) on the solar cll 20 fa this implementation, the transparent con- ‘ductive oxide 15 rocsives the change carriers gencrted by shsomtion ofthe photons and delivers these charac caries 0 the aid wires 22. The pid wires 22 in one specie embod tent comprise wires that have diameter of appeoxinstely 50 microns 150 irons and havea metalic care such 36a ‘copper or silver core The wires may also be ft sips ith rectangular or square cross sections. In this implementation, the coating may comprise acarbon base coating Hallows tho grid wies 220 adhore tothe transparent condctive oxide 15 through the pplication of het andor pressure. In one spcific example, the aid wires 2 are spaced every 310 m0 ‘ona particular sola cell 20 and the solar el 2035 approxi- ‘ately 430 mm in wid, itwil be aprocited, however Ut theexact sizeof the solr cell and ged wires 23 a wells the ‘density of the grid wires 22 onthe cell may vary depending upon the implementation without departing frm the spirit land scope of the presen invention, In another implementa- tio, an array ofthe grid wits in spaced apart and pared mangement may be held logs bya transparetadaesive layer 10034] _AsshowainF1G.2,the plurality of rid wires 2 are ‘aerang 30 aso extend of offs ede 24 of the soar cll 20 permit subsequent intereonaction oan adjacent solar ‘ell 20 na shinglinz manner FIGS. 34 and 3B illsirate one ‘embodiment his proces, The rid wies 2 from lieupper surface 21 of one solar cell 20are then connected oa botom surface 26 of the next aljcent solar cll 20 In one exbodi- tent, the otto sriae 26 comprises acondtivesustate tae oma material suchas stainless tel el ora stainless Seal foil costed with other condvctive mateils sch as rhenium or molybdenum layers. The bottom surface 26 iEenealy forms one electrode ofthe ell 20, e the anode ‘withthe upper surface 21 foming the tbe, ee cathode 10035} Asis also showa ia FIGS. 34 and 3B, the fist ee 24of one solar cell 20 can overap the second ee 25 ofthe adjcoutsolarceI20.Alematiely some implementations the soar ells 20 can be positioned substantially coplanar to ‘ach other but separated by a small gap, eg. 150 microns ‘were tho ged wies 22 then extend from the upper see of ‘one cell 20 dowa tothe lower surface ofthe ajocet el 20 “Typically hore isa well-known physical imteconneet that retin the solar cells inthis shingled orientation or inthe substantially co-planar orientation. Iwillalso be appreciated that while FIGS. 3A snd 38 illustrate the grid wires 22 ‘extending substantially across the bottom suriace 26 ofthe Adjacent solr eel 20, the pid wines 22 aced only 0 physic tally connect oa small potion ofthe bottom surface 26 (0 ‘eliver the euret from de solar el 20 othe next 10036) As is shown in FIGS. 3C-3E, in some implements- ions, the grid wires 2 ned not extend outward ome ee ‘ofapariculr cll 20, showin in FIG, 3C, he grid wires 22 ‘abo positioned soasto remain ety on the upper striae 421 of sco 20. Asis shown in FIG. 3D. the grid wires 22 are Formed on the upper surface 21 ofthe cll 20 and are covered by uncured adherve 44 whichis doseribed in grater desi below. As discussed below, the adhesive 44 may include a Dee. 27, 2012 poisture barrier material and may also be formed as pat of are layer 40 tht can also function as a moisture barter. In the embodiment of IGS, 3C-3B, the adhesive 44 ean then be ‘cured und the bottom surface 26 of an adjacent ell 20 or the second cell ean be positioned proximate to the surfice 21 of the firs cell s0 as to be interconnected by shingling. As is shown in FIG. 2, the second cell als includes the grid wires fnd the uncured adhesive 44 to shingle-interconnect it to a third solar cell (not shown). The curing process is also described in greater detail below. Ax shown in FIGS, 3C-3E, the adhesive layeris used for adhering the grid wires 22 onthe upper surface 2. attaching interconnecting the solar cells to ‘one another in @ shingled fashion, and forming a moisture barrier coating the grid wires and the upper surface. The prid ‘wires 22 are highly conductive which means thatthe contact area between adjacent cells 20 can be reduced without redne- ing the amount of eurrent lowing from one cell to the other. Thus, the amount of the cells 20 that are shaded by the adjacent cell when shingle is reduced which inereases the ‘ouipat ofthe cells 20 [0037] Referring (0 FIG. 4, a there is physical contact between the top surface 21 of one solar cell 20 with the bottom surface 26 of the adjacent solar cell 20, it may be sirable to inclade a diclectrie 30 a the interface to provide ‘additional insulation between the surfaces 21 and 26. In one ‘implementation the dielectric comprises an EPE: (EVA EVA laminate), or some derivative of EPE such a a (Theemo- plastic-PET-thermoplastic laminate) or PET only typediclec- {sie material that is coupled to the edge ofthe bottom surface 26 that physically contacts the upper surface 21 ofthe adi ‘eat solar cell 20,1 wil be understood thatthe dielectie 30 ‘or some other insulator may be positioned s0 as to be above the grid wires 22, in between the grid wires 22 or some combination thereof. [0038] In some implementations, it may be desimble to pre-form an array of grid wires 22 onto a cartier 40 for Subsequent application to asurfaceof the solar cell, FIGS, 5 and 59 illustrate one such example of the array of rid wires 22 being formed onto the carrier 40, la this implementation, ‘he grid wires 22 are attached to laminate 42 that comprises the carrier 40 and an adhesive layer 44 or bonding layer. The carrer 40, inthis implementation, may comprise materials stich as fuorinated ethylene propylene (PEP), ethylene etm Alouroethylene (ETFE), polyethylene terephthalate (PET) or thermoplastic olefin, In some implementations, the carrer Jayer 40 is approximately 25 um to 350 un thick, but typically 50 or 75 um, but the exact thickness can, of course, vary ‘depending upon the implementation without departing from the sprit of the present invention, [039] Thepluality ofgrid wires 2may be embedded ino the adhesive 44 so as to be held by the laminate 42, In one implementation, the adhesive layer 44 may comprise a ther ‘moplasic olefin layer that includes inorganie oxides such as silicon oxide SiO, or aluminum oxide AIO,. The inorga ‘oxides which may also be transparent may be included as fine particles which are distibuted inthe adhesive matrix. Inor ‘ganic oxides can funetion as a moisture barrier that inhibits the penetration of moistuce into the absorber layer 14 (FIG. 1) fof the CIGS solar cell 20. I is understood that moisture ean ‘cause detrimental effets to 4 CIGS-based solae cell and the Jaminate 42 may be constrict soa to inhibit this mi penetration ether by the formation ofthe carer film 40, the composition ofthe adhesive layer 44 or some combination thereo In one implementation, the adhesive layer 44 as a US 2012/0325282 Al thickness of approximately $0 micrometers: however, the ‘exact composition of the asi Iyer can vary depending Upon te aplication without depering fom the scape ofthe present teachings, The inoruani oxides my be position as Fart of the adesive or the inorznie oxides may be formed Into layer thats interposed betes th erie lm 40 and the adhesive layer 44 oF form a layer at some othe pion of the laminate 42 As wil also be apparest foes he following description, the carer layer 40 may form a fist moisture barrier layer andthe adhesive layer 44 wit the inorganic ‘oxides may form a second moisture bagi layer depending ‘pon the implementation {0040} FIG. 6 iwtrates how the laminate 42 with dhe ‘encapsulated arid wires 22 is adhere to a cathode 0 of the ‘CIGS bose solar eel 20, The laminate 42 of FIGS. 88 and 58s placa on the cathode 80 withthe adhesive layer 44 in ‘an uncured state covering the sfae ofthe cathode 80. By placing the rd wires ina pre-assembled laminate before Spplving othe cathode 80, wiresisalgnment and breakages may be prevented. Te adhesive layer 44s then cured by the ‘application of pressure and iat such at te adhesive ows around the grid wires 22 ad bonds them to the cathode 80 ‘The cured adhesive layer also forms a moisture baer lyer ‘or moisture sel layer onthe on the cathode surface. This process also brags the ged wires 22 into physical contact ‘vith he cathode 0 to thereby eletncally connect he eath- ‘ode 80 othe grid wires 22 so thatthe arid wires 22 receivetc ‘change cuits generated by the absorption of potons inthe sbsorber 14. Tn one implementation, during the curing po- ‘ees, pressure maybe applied onto the earier layer to bring the wid wires 22 into piysieal contact with the cathode sr fice, The cored adhesive layer 44 is transparent and doesnot inhibit Hight transmission, and the curing process may also hep to increase the density othe inongnni oxides by Bring inathom closer around the gr wires 22, thereby establishing abeitermoistir brreron te grid wire surface prtons tt ‘ee notin physical coataet ith the cathode 80, Inne specitic imupementation, the laminate 42 is heated wo appecximstely beeen 200€ and 400 in an environment of appeoxinstely 30 sito 30 psi to adhere th adhesive layer 4 Wo the cathode 50 and to have tho grid wires 22 contact and bond to the cathode. In another embodiment, afer the laminate 42 is placed on theeathose 80 and before curing the adhesive layer Mf orparally curing ithe earrie 40 is posed oft te adbe- sive layer. {0041} 1c willbe appreciated that the cariee 0 may be sad of light ransmirsive material and can form compo- nent ofthe complete soar cell assembly. Altmatively. the ‘carver 40 muy bea temporary componcu Lat perils the pplication of the grid wires 22 to the upper surface ofthe ‘fst in the manner desebedabove andthe carrer 40 aa then he removed from the solr cel 20 before the inercon- nection proces 10042] Tell be further apprecite that te grid wires 22 are formed oato the laminate 42 prior to application ofthe Faminate 2 onto the CIGSsokar ell 10 Thus, te wei wires 22 ave poorly arranges on a portion ofthe laminate 42, that portion ofthe Tamiuate 42 can then be renee fom the manfactaring process chain end not applied othe sores 10, This sn soneas wo deposition of eondotve busbar or rds directly nto the sola call 10 where troneods or oor ‘pplication of the conventional usar or grid onto the solar ‘cell 1Osaualyrequites the removal ofthe entire solar cll 10 From the manufacturing process chin Dee. 27, 2012 0043] FIGS. 7 and 7B are top and bottom views of a Jaminate material 60, similarto the laminate 42 of FIGS. $A. ‘SB and 6, that includes encapsulated urd wires 22. Asshow: the laminate material 60s formed into a shoot having a tirst side 62 and a second side 64 with a plurality of openings 66 extending from the fist side 62 to the second side 64, As shown in FG. 7B, plurality of grid wires22 may be adhered tothe second sie 64 othe sheet 60 ina manner similar to the ‘manner discussed above 0044} As shown, the grid wires 22 are generally extending ‘na direction thats perpendicular othe direction of openings 66. The openings 66 are generally comprised af a plrality of ‘openings 662-66¢ arranged into lie. The openings 660-66e fare gencrally sized and located so that cach of the grid wires 2Zextends aeross one of the openings 66a-66e or can otber- ‘wise be electrically contacted therethrough. [0045] The sheet 60 is formed asa laminate sheet suitable oreutting such that individual pieces of laminate 70, suchas the laminate 42 described above ia connection with FIGS. 5A, SB and 6, can becut from the sheet 60. In the exemplary ‘embodiment shownia FIGS. 7A and 7B, there area otal of 19 dierent individual piooes of laminate that ean be formed by culing the sheet 60 where each individual piece will be able to couple between two different solar cells 20 ina shingling [0046] Referring now toFIGS.8A-RC the wseot individual pieces of laminate 70 cut from the sheet 60 will now be ‘eseribed in forminga shingled arrangement solar ces 2. PIGS, BARC illustrate a top view with a superimposed side view of anindividval laminate piece 70 as itis positioned on ‘the solar cell 20, For clarity, the underlying eid wires 2 are shown through a transparent top view ofthe laminate piece 70. Inthis implementation, the laminate piove 7 comprises a Jaminate ofa carrier 40 with an adhesive 4 attached thereto encapsulating the grid Wires 22 in substantially the same ‘manner as deseribed show 0047] As isalso shown a dielectric layer 74 may be po tioned at least one of the lateral edges 72 of each of the Jminat pieces 70. Asdiscussed above, thedielectri layer 74 sravides additional insulation between the eleczical compo- fens of one solar cell from another ut the edges thereby ‘nhibiting undesired eleetieal eantaet and potential shorting In one implementation, strips of the dicletric layer 74 is interposed between the grid Wire 22 and the main body ofthe solar cel 20. The dielectric layer 74s, in one implemen ‘ion, formed on the eathode 50 of the solar eel 20. In one implementation, the dielectric layers 74 comprise UV-cur able or hea and pressure curable, transparent type dielectric, Torexuample a dielecri resin, that may be between 20 15 uma And up t0 50 um thick and may be deposited by printing or

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