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NTB75N03L09
Power MOSFET
75 Amps, 30 Volts
NChannel TO220 and D2PAK
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This Logic Level Vertical Power MOSFET is a general purpose part
that provides the best of design available today in a low cost power 75 AMPERES, 30 VOLTS
package. Avalanche energy issues make this part an ideal design in. RDS(on) = 8 mW
The draintosource diode has a ideal fast but soft recovery.
NChannel
Features D
UltraLow RDS(on), Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits G
IDSS and VDS(on) Specified at Elevated Temperatures
High Avalanche Energy Specified S
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
MARKING DIAGRAMS
PbFree Packages are Available & PIN ASSIGNMENTS
4
Typical Applications
Drain
Power Supplies 4
Inductive Loads
PWM Motor Controls
Replaces MTP75N03HDL and MTB75N03HDL in Many TO220
75N
03L09G
Applications CASE 221A AYWW
STYLE 5
1 1 3
2 Gate Source
3 2
Drain
4
Drain
4 75N
1 D2PAK 03L09G
2 CASE 418AA AYWW
STYLE 2
3
2
1 3
Drain
Gate Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds TL 260 C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
Device Package Shipping
NTP75N03L09 TO220 50 Units/Rail
NTP75N03L09G TO220 50 Units/Rail
(PbFree)
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2
NTP75N03L09, NTB75N03L09
GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS 100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2) VGS(th)
(VDS = VGS, ID = 250 mAdc) 1.0 1.6 2.0 Vdc
Threshold Temperature Coefficient (Negative) 6 mVC
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NTP75N03L09, NTB75N03L09
120 150
VGS = 4 V
VGS = 3.5 V 135 VDS 10 V
VGS = 4.5 V
ID, DRAIN CURRENT (AMPS)
0.007
TJ = 25C 0.007
0.0065 VGS = 5 V
0.006
0.006
0.0055 VGS = 10 V
TJ = 55C
0.005 0.005
0.0045
0.004 0.004
10 20 30 40 50 60 70 80 90 100 120 0 20 40 60 80 100 120
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance vs. Drain Current and Figure 4. OnResistance vs. Drain Current and
Temperature Gate Voltage
RDS(on), DRAINTO SOURCE RESISTANCE (NORMALIZED)
1.6 1000
VGS = 5.0 V VGS = 0 V
ID = 37.5 A
1.4
TJ = 125C
IDSS, LEAKAGE (nA)
100
1.2
TJ = 100C
1
10
0.8
0.6 1
50 25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (C) VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
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4
NTP75N03L09, NTB75N03L09
12000 10 30
8000 VDS 20
6
6000 QT
Ciss
4 Q1 Q2
4000 10
Coss
2 ID = 75 A
2000
TJ = 25C
Crss
Q3
0 0 0
10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 22 25 0 10 20 30 40 50 60
GATETOSOURCE OR DRAINTOSOURCE Qg, TOTAL GATE CHARGE (nC)
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
1000 75
70 VGS = 0 V
tr IS, SOURCE CURRENT (AMPS) 65 TJ = 25C
60
55
50
t, TIME (ns)
tf 45
40
100
35
td(off) 30
25
20
td(on) 15
TJ = 25C VDD = 15 V 10
ID = 75 A VGS = 5 V 5
10 0
1 2.2 4.7 6.2 9.1 10 20 0.0 0.2 0.4 0.6 0.8 1.0
RG, GATE RESISTANCE (W) VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
EAS, SINGLE PULSE DRAINTOSOURCE
1600
1400 ID = 75 A
AVALANCHE ENERGY (mJ)
1200
1000
800
600
400
200
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (C)
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NTP75N03L09, NTB75N03L09
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AA
NOTES:
SEATING
T PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
T 3. DIMENSION Z DEFINES A ZONE WHERE ALL
S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
Q A DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U
C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L R L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
V J Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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6
NTP75N03L09, NTB75N03L09
PACKAGE DIMENSIONS
D2PAK
CASE 418AA01
ISSUE O
NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
V
B
W INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
A D 0.020 0.036 0.51 0.92
S E 0.045 0.055 1.14 1.40
1 2 3
F 0.310 7.87
G 0.100 BSC 2.54 BSC
J 0.018 0.025 0.46 0.64
T K K 0.090 0.110 2.29 2.79
SEATING W M 0.280 7.11
PLANE S 0.575 0.625 14.60 15.88
G J V 0.045 0.055 1.14 1.40
STYLE 2:
D 3 PL PIN 1. GATE
2. DRAIN
0.13 (0.005) M T B M 3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
8.38
0.33
10.66 1.016
0.04 5.08
0.42 0.20
3.05
0.12
17.02
0.67
SCALE 3:1 inches
mm
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NTP75N03L09, NTB75N03L09
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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