PD-91277

IRFZ46N
HEXFET Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 55V
l Dynamic dv/dt Rating
l 175C Operating Temperature RDS(on) = 16.5m
l Fast Switching G
l Fully Avalanche Rated ID = 53A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute TO-220AB
to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 53
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 37 A
IDM Pulsed Drain Current 180
PD @TC = 25C Power Dissipation 107 W
Linear Derating Factor 0.71 W/C
VGS Gate-to-Source Voltage 20 V
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 1.4
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
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Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 16.5 m VGS = 10V, ID = 28A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 19 S VDS = 25V, ID = 28A
25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 44V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 72 ID = 28A
Q gs Gate-to-Source Charge 11 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 26 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 14 VDD = 28V
tr Rise Time 76 ID = 28A
ns
td(off) Turn-Off Delay Time 52 RG = 12
tf Fall Time 57 VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 1696 VGS = 0V

Coss Output Capacitance 407 VDS = 25V
Crss Reverse Transfer Capacitance 110 pF = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy 583 152 mJ IAS = 28A, L = 389H

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
53
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

180
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, I S = 28A, VGS = 0V

trr Reverse Recovery Time 67 101 ns TJ = 25C, IF = 28A
Qrr Reverse Recovery Charge 208 312 nC di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25C, L = 389H
RG = 25, IAS = 28A. (See Figure 12)
ISD 28A, di/dt 220A/s, VDD V(BR)DSS,
TJ 175C
Pulse width 400s; duty cycle 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175C.

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1000 1000 VGS
VGS
TOP 15V TOP 15V
10V 10V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100

4.5V
10 10
4.5V

20s PULSE WIDTH 20s PULSE WIDTH

TJ = 25 C TJ = 175 C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
ID = 53A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5
TJ = 25 C

100 2.0
(Normalized)

TJ = 175 C

1.5

10 1.0

0.5

V DS = 25V
20s PULSE WIDTH VGS = 10V
1 0.0
4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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20


3000 ID = 28A
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED V DS = 44V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd V DS = 27V
2500 Coss = Cds + Cgd V DS = 11V
16
C, Capacitance (pF)

C iss
2000
12

1500
Coss
8
1000

Crss
500 4

FOR TEST CIRCUIT

0 SEE FIGURE 13
1 10 100 0
0 10 20 30 40 50 60 70
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100 100
TJ = 175 C

100sec
10 10
TJ = 25 C 1msec

1 1
10msec
Tc = 25C
Tj = 175C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.7 1.2 1.7 2.2
1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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60
RD
VDS

50 VGS
D.U.T.
ID , Drain Current (A)

RG
+
40 -VDD

VGS
30 Pulse Width 1 s
Duty Factor 0.1 %

20
Fig 10a. Switching Time Test Circuit
10 VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( C)

10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20


0.10
PDM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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EAS , Single Pulse Avalanche Energy (mJ)

350
1 5V ID
TOP 11A
300 20A
D R IV E R
BOTTOM 28A
VD S L
250

RG D .U .T + 200
- VD D
IA S A
20V
tp 0 .01 150

Fig 12a. Unclamped Inductive Test Circuit 100

V (B R )D SS 50

tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

12V .2F
QG .3F

VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
ISD controlled by Duty Factor "D" VDD
-
D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET power MOSFETs

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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

10 .54 (.4 15) 3 .7 8 (.149 ) -B -

2.87 (.11 3) 10 .29 (.4 05) 3 .5 4 (.139 ) 4.69 ( .18 5 )
2.62 (.10 3) 4.20 ( .16 5 )
-A - 1 .32 (.05 2)
1 .22 (.04 8)

6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5) L E A D A S S IG NM E NT S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 4.09 (.55 5)
1 3.47 (.53 0) 4.06 (.16 0)
3.55 (.14 0)

0.93 (.03 7) 0.55 (.02 2)

3X 3X
0.69 (.02 7) 0.46 (.01 8)
1 .4 0 (.0 55 )
3X
1 .1 5 (.0 45 ) 0 .3 6 (.01 4) M B A M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

TO-220AB Part Marking Information

E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y A
LOT C ODE 9B1M IN TE R N A TIO N A L PART NU MBER
R E C TIF IE R
IR F 10 1 0
LOGO 9246
9B 1M D A TE C O D E
ASSEMBLY
(Y Y W W )
LOT CO DE
YY = YEAR
W W = W EEK

Data and specifications subject to change without notice.

This product has been designed and qualified for the automotive [Q101] market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
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