Microsemi Corp. 1N6267 thru fr ares 4N6303A Ferrer rmnon ct and 1.5KE6.8 thru (nz) 981-6300 1.5KE400A FEATURES: TRANSIENT ‘© ECONOMICAL ABSORPTION ZENER ‘+ 1800 WATTS PEAK PULSE POWER DISSIPATION UNIDIRECTIONAL. ‘+ STAND OFF VOLTAGES FROM sv -171v AND ‘+ UNIPOLAR OR BIPOLAR BIDIRECTIONAL ‘+ AVAILABLE IN CHIP FORM FOR HYBRID APPLICATION ‘© MULTL-CHIP BIDIRECTIONAL CELLS AVAILABLE DESCRIPTION This defines a series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. TAZ devices have become very important as a consequence of their high surge capability, extremely fast response time, and low incremental surge resistance (Rs). ‘To characterize TAZ, a minimum voltage at low current conditions (Vi), and a maximum clamping voltage (Vo), at a maximum peak pulse current are speci- fied. In addition, a maximum clamping ratio is indicated. The maximum leak- axe current at the rated stand-off voltage is also provided to assure low power consumption under normal conditions. = | APPLICATION | 10 ‘This TAZ series has a peak pulse power rating of 1500 watts for one millisecond. sees, Fe Itcan protect integrated cireuits, hybrids, CMOS, MOS, and other voltage: sitive components in a broad range of applications such as telecommunica- tions, power supplies. computers, automotive, and industrial equipment. [An diensons in INCH MAXIMUM RATINGS 1500 Watts of Peak Pulse Power Dissipation at 25°C. MECHANICAL tetamping (0 Volts to Vepny Min) CHARACTERISTICS Unidirectional < 1x10" Seconds; Bidirectional <5 x10"® Seconds. CASE: Molded Operating and Storage ‘Temperature ~65°C to +175°C. WEIGHT: 15 Grams (Approx.) Forward Surge Rating 200 Amps, 1/20 Second at 25°C, jn 1S Gra tae Steady State Power Dissipation 5.0 W @ TI = 75°C. BOP Un) oniive Teumanal (Not Applicable in Chip Form) adem ELECTRICAL CHARACTERISTICS Clamping Factor: 1.33 @ full rated power 1.20 @ 50% rated power ‘The Clamping Factor is defined as: The ratio of the actual Vo (Clamping Voltage) to the actual Vga) (Breakdown Voltage) as measured on a specific device 4451N6267 thru 1N6303A and * 1.5KE6.8 thru 1.5KE400A si ELECTRI CAL CHARACTERISTICS @ 25°C : al B ‘ager | ie Z3 & is “fa i ae ie Bayi] Be yb] as = 2 ilalale | a aie) ile] 3 8 EUR) ) ta | a B el aey | Ss 2] Re te ° Bete etlas : jing 9 mune a wr ec Feo pti Ye a ee ete eaema ee ‘eStage caren sdbled TNEORX or 1NEGQS nt avalble as bdversonal For Dlr capactance wit be Sma ‘how Fg. 20-2010 bas. ‘SYMBOLS AND ABBREVIATIONS, ‘Yona = Rad Sana ot Vorage ‘Yoany = Beaton Votage Pea Pulte Curent y= Test Coren! pp = Peak Pulse Power I= Reverse Loskage Voquaxy = Maxemun Cizmpng Voge ere ort mer a eta yd sn rn iy smegma, (Srey atic anata entaeemenoe ean dna soe 416 FIGURE 1 PEAK PULSE POWER VS. PULSE TIME (T w) IN us i BV: Breakdown Voltage in Volts FIGURE 2 TYPICAL CAPACITANCE VS. BREAKDOWN VOLTAGE, pr tee FIGURE 3. PULSE WAVE FORM FIGURE 4 DERATING CURVE