Bai Giang Vat Lieu Ky Thuat Dien Chuong 2 Vat Lieu Ban Dan 04

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BI GING VT LIU K THUT IN IN T Trang 33
CHNG 2: VT LIU BN DN (VLBD)

2.1 Cc qu trnh vt l trong VLBD v cc tnh cht ca chng
2.1.1 Cc khi nim c bn v bn dn
Vng nng lng trong cht rn
Cht rn c coi nh cu to bi mt tp hp cc nguyn t. Trong vt rn tinh th
cc nguyn t c sp xp mt cch tun hon trong mng tinh th, kho st
vn mt cch khi qut ta hy xt mng tinh th gm nhng nguyn t ging
nhau. Khi khong cch gia cc nguyn t ln, cc nguyn t c coi l c lp:
khng tng tc vi nhau. Mi nguyn t c mc nng lng gin on cho php,
ging nh trong trng hp ch c mt nguyn t n c. Trong s cc mc nng
lng c mt s mc b chim bi electron. trng thi c bn electron ch
chim nhng mc nng lng thp nht. Khi ch c 1 nguyn t c lp ng vi mi
gi tr lng t n ch c duy nht 1 mc nng lng, 1 qu o . Khi khong cch
gia cc nguyn t gim n mt gi tr no , cc nguyn t c tng tc vi
nhau th s chuyn ng ca electron khng nhng chu nh hng ca ht nhn
nguyn t ca n m cn chu nh hng ca cc nguyn t khc trong mng tinh
th. Khi c 2 nguyn t tng tc vi nhau th s chuyn ng ca hai electron ca
hai nguyn t chu nh hng ca c hai ht nhn ca hai nguyn t, tho
mn nguyn l Pauli hai electron phi hai trng thi khc nhau, do mi mc
nng lng c by gi b tch thnh 2 mc nng lng. Nu h cha N nguyn t
th mi mc nng lng trong nguyn t c lp s tch thnh N mc. Cc mc ny
rt st nhau to thnh vng nng lng cho php. Trong 1 cm3 c khong 1022
nguyn t, mi mc nng lng s tch thnh 1 s rt ln, m rng ca mt
vng nng lng khong mt vi eV, do khong cch gia cc mc nh trong
vng nng lng khong 10-22eV, c th ni s bin thin nng lng trong mt
vng nng lng gn nh lin tc. Gia cc vng nng lng l cc vng trng (gi
l vng cm) m trong khng th tn ti bt k trng thi no ca electron.
Khi s lng electron v s nguyn t tng ln th s mc c tch ra t 1 mc
tng ln theo, to thnh vng nng lng cho php. Nhng electron vng qu o
ngoi cng chu nh hng tng tc nhiu nht, do c vng nng lng rng
nht. i vi electron trong cng, nh hng tng tc nh nht nn vng nng
lng hp nht, thm ch khng th phn bit vi mc nng lng ca nguyn t c
lp. (Hnh 2.1)
B rng ca vng nng lng ph thuc vo khong cch gia cc nguyn t tc l
ph thuc vo cu trc tinh th.
S trng thi trong mi vng li ph thuc vo s lng nguyn t tc l ph thuc
vo ln nguyn t.
Nhng vng gn nhau c th ph ln nhau, nu khong cch ny ln th cc vng
nng lng s cch xa nhau v c th ngn cch bng vng cm.
Chng 2: VT LIU BN DN
Vng nng lng

ph ln nhau
Vng nng lng

cch xa nhau
Electron
trong cng
Hnh 2.1 S hnh thnh vng nng lng trong cht rn
Cu trc vng nng lng trong VLBD
Cc vng nng lng trong cht rn c th b chim y, chim mt phn hay b
trng. Vng nng lng cao nht b chim bi electron ha tr v vng cao hn
quyt nh tnh dn in ca cht rn. Vng ha tr cha nhiu in t b chim y
v vng pha trn tip ngay sau l vng dn. vt liu dn in vng dn khng
c in y. Cc electron d dng b chuyn t vng ho tr ln mc nng lng
cao hn tr thnh electron t do v tham gia vo qu trnh dn in.
vt liu cch in vng ha tr b chim y, vng cm c gi tr ln c vi eV,
do vy cc electron kh c kh nng vt qua vng cm tham gia dn in.
vt liu bn dn in cu trc vng nng lng tng t nh vt liu cch in
nhng vng cm hp hn c 0,1eV n 1 eV. 00K chng l cht cch in.
nhit trong phng cc electron c th thu c nng lng nhit ln
chuyn ln vng dn v tham gia vo qu trnh dn in. iu khc nhau gia s
dn in ca kim loi v bn dn l khi cc electron chuyn ln vng dn th ng
thi to ra vng ha tr cc l trng (Hnh 2.2).
Hnh 2.2 Cu trc vng nng lng trong VLBD.

: Electron t do trong vng dn
: L trng trong vng ha tr
Do , cc electron trong vng ha tr c th chuyn ng n cc l trng lp
y to ra s chuyn ng ca cc l trng l dng cc l trng mang in tch
dng.
Mc thp nht trong vng dn ng vi nng lng ca electron ng yn hay chnh
l th nng ca electron, do y vng dn tng ng vi th nng ca electron,
tng t nh nh vng ho tr l ng vi th nng ca l trng. Nu electron mc

nng lng cao hn WC hoc nu l trng mc nng lng thp hn WV th cc
electron v l trng ny c ng nng bng hiu gia cc mc nng lng ca
chng v nng lng ng vi y vng dn hoc nh vng ha tr. (Hnh 2.3)
Hnh 2.3 y vng dn tng ng vi th nng ca electron

*Phn loi VLBD
Vt liu bn dn s dng trong thc t c th chia ra bn dn n gin, bn dn hp
cht ha hc v bn dn phc tp (bn dn gm). Hin ti nghin cu bn dn t
trng v bn dn lng.
Tt c c khong 10 loi bn dn n gin
Nguyn t Thuc nhm (bng tun hon Menlev)

Bo III
Silic IV
Giecmani IV
Phtpho V
Asen V
Lu hunh VI
Slen VI
Tlua VI
It VII
Cc cht giecmani, silic v slen c ngha quan trng trong k thut hin i.
Bn dn hp cht ha hc l hp cht ca cc nguyn t thuc cc nhm khc nhau
trong bng h thng tun hon Menlev tng ng vi dng tng qut
A IV B IV (SiC) A III B V (InSb,GaAs) v mt s cht c thnh phn phc tp.(Cc
VLBD lin kt nh GaAs, k hiu chung AIIIBV, ch s lin kt ca nguyn t c
ho tr III l Ga vi nguyn t c ha tr V l As )
*Cu trc tinh th ca VLBD
Kho st 2 VLBD chnh l Silic v germani: Tnh cht chung trong cu to nguyn
t ca chng l c 4 electron ha tr trn phn lp ngoi. Gia cc nguyn t Silic
(germani) c s lin kt ng ha tr, mi nguyn t lin kt vi 4 nguyn t xung
quanh bng cch trao i electron chung vi nhau. (Hnh 3.4)
Hnh 2.4 S tri phng mt chiu ca mng tinh th Silic

Cu trc tinh th ca Silic, Germani trong mng khng gian ba chiu l cu trc kim
cng. Gm 2 lp phng din tm lng vo nhau, cch nhau ng cho trong
khng gian.
a/ c bn
b/ Cu trc tinh th ca Si, Ge,

cu trc kim cng
Hnh 2.5
S nguyn t Silic trong lp phng
1 1
.8 + .6 = 4
8 2
Mt nguyn t Silic trong tinh th
2.4
Nsi =
a3
Hng s tinh th ca Silic l:
a= 5,43 A0
Vy: N (Silic) = 4,997. 1022 nguyn t/ cm3
Nu 2 nguyn t trong c bn khc nhau th cu trc gi l cu trc Sfalerit (hay
blenzo km). Cc VLBD: GaAs, AlAs, CdS thuc cu trc ny. GaAs c cu
trc tinh th sfalerit c bn c 2 nguyn t. Trong 1 l Ga, cn 1 l As. Bn
nguyn t As bao quanh 1 nguyn t Gali, 4 nguyn t Ga bao quanh 1 nguyn t
Asen.
Hnh 2.6 Cu trc tinh th Sfalerit ca GaAs

*VLBD tinh khit
nhit T=00K khng c electron no vng ha tr c nng lng bng nng
lng vng cm Wg nhy ln vng dn, VLBD c th dn in. nhit
ny VLBD khng c tnh dn in ging nh in mi l tng.
Khi T>0 tn ti mt xc sut c mt s electron do nhn c nng lng nhit s
vt qua vng cm c mt vng dn, tr thnh electron t do. Nh vy s to
thnh mt s l trng vng ha tr, do cc l trng ny m electron vng ha tr
s tham gia vo qu trnh dn in. Bn cht ca s chuyn ng ca cc l trng
ny c th hnh dung nh s chuyn ng ca cc in tch dng vi mt gi tr
khi lng hiu dng no . S chuyn ng ca electron t do trong min dn d
dng hn s chuyn ng ca l trng trong vng ha tr. Ni cch khc, tnh linh
ng ca electron ( n ) trong vng dn ln hn tnh linh ng ca l trng ( p )
trong vng ha tr. (i vi Germani n = 0,38 m2/Vs, p = 0,18 m2/Vs)
in dn sut ca VLBD xc nh nh sau: = n n + p p
n, p l mt electron v l trng (cm-3) trong VLBD.
VLBD tinh khit l VLBD c th b qua nh hng ca tp cht trong n. Trong
VLBD tinh khit c bao nhiu electron t do th c by nhiu l trng.
Do vy: n = p = ni
Wg
C th tnh c: n = NC exp( )
2kT
2 W
g
V n = n.p = N .N exp( )
i C V
kT
Wg
(NC, NV bin thin chm theo nhit , coi nh khng i bn cnh exp( )
kT
Wg
hay: n = N .N . exp( )
i C V
2.k.T
*
2.m kT
y: N
C
= 2( e
2
)3 / 2
h

2.m kT
v N
V
= 2( h
2
)3 / 2
h

Trong : me v mh l khi lng hiu dng ca electron v l trng
(S chuyn dch trong gii hn tinh th mt cch hn lon hoc di tc ng ca
in trng ngoi theo hng nht nh, electron lun lun chu tc ng ca
trng tun hon trong tinh th; a khi nim khi lng hiu dng, cho kh nng
vit nn chuyn ng ca cc in tch t do trong bn dn ging nh chuyn ng
ca cc ht in tch khng tnh ti trng tun hon ca li tinh th.)
T : i = nen + pep = eni (n + p )
V d: Tnh mt ht mang in ca VLBD tinh khit l Silic, Germani, GaAs khi

nhit bin thin t 100K n 600K. Cho bit nng lng vng cm bin thin
2
theo nhit : W(T) = Wg(0) - T /(T + )
Wg(0): nng lng vng cm 00K (eV), ; l hng s
Vt liu Wg(0) (eV .K 1 ) (K ) mn (hg ) mp (hg )
Silic 1,17 4,37.10-4 636 0,98 m 0,49 m
-4
Germani 0,74 4,77.10 235 1,64 m 0,28 m
-4
GaAs 1,519 5,4.10 204 0,067 m 0,45 m
Gii:
Mt ht mang in ca VLBD tinh khit c xc nh bng phng trnh
3/2
2kT 3/4 Wg 3/2 Wg
n = 2 (m .m ) . exp( ) = AT exp( )
i 2 n p
h 2kT 2kT
3/2
2 k 3/4
Trong : A = 2 (m .m ) .
2 n p
h
Wg
Hm T 3/2
tng chm hn hm exp( ) . Trong php tnh gn ng c th xem
2kT
W
g
AT3/2 = const bn cnh exp( )
2kT
Chn cc gi tr ca nhit T(K) = 100; 150; 200; 250; 300; 350; 400; 600. Tnh
gi tr A
3/2
23
6,28.1,38.10 3/4 66 3/4
A = 2 (m .m ) = 5,53.10 .(m .m )
n p n p
(6,625.10 34 )2

i vi Silic: A = 5,53. 1066(0,98 m.0,49)3/4 = 5,53.1066.m3/2(0,98. 0,49)3/2

Vi (m=9.10-31 kg) A = 2,7.1021(m-3) ni = 2,7. 1021 .T3/2exp (-Wg/2kT)
i vi Germani: A = 2,68.1021(m-3) ni = 2,68. 1021 .T3/2exp (-Wg/2kT)
Vi GaAs: A = 3,47.1020(m-3) ni = 3,47. 1021 .T3/2exp (-Wg/2kT)
T(K) 100 150 200 250 300 350 400 600
-Silic
Wg(eV) 1,16 1,57 1,14 1,1391 1,13 1,11 1,103 1,043
Wg
exp( ) 2.10-30 4.10-20 5.10-15 3.10-12 3.10-10 1.10-8 1,1.10-7 4.10-5
2kT
ni(m-3) 6.10-1 2.105 4.1010 3.1013 5.1015 2.1017 2.1018 1,7.1021
-Germani
Wg(eV) 0,72 0,71 0,69 0,68 0,66 0,64 0,62 0,53
Wg
exp( ) 2,8.10-19 1,3.10-12 2.10-9 1,35.10-7 3.10-6 2,8.10-5 1,2.10-4 5,9.10-3
2kT
ni(m-3) 7,5.105 2,3.10512 1,5.1016 1,4.1018 4,2.1019 4,3.1020 2,7.1021 2,3.1023
-GaAs
Wg(eV) 1,5 1,48 1,46 1,44 1,42 1,4 1,38 1,2
Wg
exp( ) 4,5.10-39 1,5.10-25 6,4.10-19 2,6.10-15 1,3.10-12 1.10-10 2.10-9 4,5.10-6
2kT
ni(m ) 1,5.10-5
-3
9,9.10-2 6,3.105 3,5.109 2,3.1012 2,4.1014 5,5.1015 2,3.1019
*VLBD c tp cht
tng in dn sut ca Silic, Germani ngi ta cho vo nguyn t khc c ha tr
III hoc V. Nguyn t ny gi l tp cht, coi nh l cht kch thch vi s lng rt
nh. Ty theo loi in tch no (m hay dng) m VLBD c tp cht c phn
loi l loi n hay p.
*VLBD loi n
Nu cho vo Silic (hoc Germani) mt s lng ca nguyn t c ha tr V, v d
Antimony (Sb). Nguyn t Sb c 5 electron ha tr, s thay th nguyn t Silic, n
lin kt vi 4 nguyn t Silic gn nht bng cch trao 4 electron. Cn 1 electron d,
gn nh c t do chuyn ng xung quanh li mang in tch dng ca nguyn
t Silic vi bn knh ca qu o rt ln.
Hnh 2.7 Tp cht Sb trong tinh th Si

i vi Germani chng hn nng lng electron d ny gn bng 0 (-0,03 eV), cn
bn knh qu o ln gp 27 ln bn knh qu o ca electron hydro.
Do nng lng lin kt qu nh cho nn ngay nhit phng electron d ny ca
tp cht c gn nh t do, c th nhy vo vng dn gp phn vo vic to ra
dng in nu c kch thch bng mt nng lng rt nh (nh nh sng, nhit
..). R rng, electron ny khng to ra l trng. S ht mang in m nhiu hn
do tp cht gi l tp cht cho hay tp cht donor.
Mc nng lng cho Wd st ngay mc Wc. Nh vy tp cht cho to ra mc
nng lng cho php trong vng cm ( na pha trn).
Hnh 2.8 Mc nng lng cho Wd st ngay mc Wc

nhit phng mi nguyn t tp cht cho cho thm 1 ht mang in, mc d
c nng thp nhng lm tng mt ht mang in, t lm tng in dn sut
vi mc tng ln.
n = i + e.N.d. n e.N.d. n vi Nd: mt tp cht cho
V : e.Nd. n >> i
V d: So snh in dn sut ca Germani tinh khit vi Germani loi n c tp cht
cho l phtpho, s nguyn t tp cht ny ch bng 1 phn triu ca s nguyn t
Germani.
Gii:
S nguyn t Germani trong 1 m3 l N = 1028 (m-3), s nguyn t phtpho ch bng
1/106 s nguyn t Germani tc l 1022 (m-3)
nhit phng: niGermani =1019 (m-3) nn in dn sut :

19 19
i = nie(n + p ) = 10 .1,6.10 (0,38 + 0,18)
1
= 0,89( )
i
m
i vi Germani loi n:
19 22 3 1
= e.Nd. = 1,6.10 .10 .0,38 = 0,61.10 ( )
n n
m
Ta thy in dn sut tng ln 1000 ln trong khi s nguyn t tp cht ch bng 1
phn triu s nguyn t VLBD tinh khit.
*VLBD loi p
VLBD tinh khit nu pha tp cht nhm III nh B, Al, In do ch c 3 lin kt
hon chnh, 1 lin kt b h nn ch cn 1 kch thch nh (nhit , nh sng) s c
1 electron ca cc lin kt hon chnh bn cnh th vo. Tp cht b ion ha thnh
m, cn mi lin kt m electron i khi s xut hin mt in tch dng tc mt
l hng. Vy tp cht lm tng mt l trng m khng lm tng mt in
t. Tp cht nhm III lm tng mt l trng c gi l tp cht nhn v bn dn
gi l bn dn loi p, n to ra mc nhn Wa nm st b trn ca vng ha tr.
(Hnh 2.9 )
Hnh 2.9 Mc nng lng nhn Wa nm st mc Wv

Gi Na l mt tp cht nhn th in dn sut ca VLBD loi p l :
= e.Na. + e.Na.
p p i p
V d: Tnh mt tp cht trong 1 thanh Germani loi p c chiu di 6 mm, b

rng 1 mm, dy 0,5 mm v in tr l 120
Cho bit ni = 2,5.1019 [m-3]
m2 m2
Gii: n = 0,39 v p = 0,19
V .s V .s
6
S 0,5.10 2
Tnh in tr sut: = R = 120. = 10 [m]
3
l 6.10
1 2 1
p = = 10 [ ]
Suy ra in dn sut: m
Tnh i :
19 19
i = e.ni (n + p ) = 1,6.10 .2,5.10 (0,39 + 0,19)
1 1
= 1,45[ ] << = 100 [ ]
i p
m m
p i 100 1,45 21 3
Suy ra: Na = = 19
= 3,8.10 [m ]
e 1,6.10 .0,19
p
in dn sut do electron trong vng dn bng
19 19
e.ni .n = 1,6.10 .2,5.10 .0.39 = 1,56 chim t l 1,56% tng in dn sut.
2.1.2. S ph thuc nhit ca mt cc ht mang in
*V tr mc Fermi trong VLBD c tp cht
Hm phn b Fermi-Dirac p(w) cho bit xc sut in t chim mc nng lng w
no .
1
p (W ) =
W W F
1 + exp
kT
Trong : k = 1,38.10- 23 [J/K] Hng s Boltzmann
WF : Nng lng Fermi
1
Vi W = WF: p(W ) = c lp vi nhit (mc nng lng Fermi l trng
2
thi nng lng m xc sut chim trng thi nng lng bi mt electron
ng bng 1/2)
S phn b ca electron v l trng c trng thi nng lng cho php ph thuc
vo v tr ca mc nng lng Fermi. Xc nh c v tr ca mc Fermi ta xc
nh c s ht mang in c th c ca s dn in.
*Mt ht mang in trong bn dn
xc nh s lng cc in tch t do trong bn dn cn ly tch phn theo nng
lng tch s ca hm mt phn b cc mc nng lng S(W) v xc sut chim
cc mc ny p(W) .Vy:

n = ne = Se (w).p(w).dw = NC exp[(wg wp ) / kT]
WC
Tng t, ta c:
W
V W
F]
p = S (w)[1 p(w)].dw = N
p V
exp[
kT

*
2.m kT
y: N
C
= 2( e
2
)3 / 2
h

2.m kT
v N
V
= 2( h
2
)3 / 2
h

Trong : me v mh l khi lng hiu dng ca electron v l trng
V tr mc Fermi trong VLBD tinh khit
Ta c: n = p = ni
31
Gi thit rng : m = m = m = 9,1.10 kg
e h e
th Nc = Nv = 2,5. 1025 m-2
Vy: n = p Wg WFi = WFi WFi = Wg/2
Mc Fermi trong VLBD tinh khit nm gia vng cm.
*V tr mc Fermi trong VLBD loi n
nhit thp hoc c mt tp cht ln:
nhit thp, nng tp cht donor b ion ha bng nng ca electron:
Pd = n. Mi donor b ion ha c th xem nh mt trung tm va chim c mt
l trng. Khi nng ca cc donor ny xc nh c:
Wd WF
Pd = Nd exp( )
kT
Wd W Wg W
F F
Pd = n Nd exp( ) = Nc exp( )
kT kT
Chn trc ta ti Wv = 0 th Wg = Wc ta c:
Wd W Wc W
F F
ln Nd + ( ) = ln Nc ( )
kT kT
Wd + Wc 1 Nd
WF = ( )+ kT ln
2 2 Nc
T= 00K mc Fermi nm gia mc cho Wd v b di ca vng dn
nhit cao hoc mt tp cht nh:
Trong trng hp ny Nd<< Nc. Ta tnh c
Nc
WFn = Wg kT ln
Nd
Nc
nhit phng T=3000K gi tr kT ln 0.01 0.02 (eV) ; WFn <Wd
Nd
nhit rt cao mc WFn gim xung mc WFi ca VLBD tinh khit
*V tr mc Fermi trong VLBD loi p
Lp lun tng t ta tnh c Fermi trong VLBD loi p
Na
W = Wv kT ln
Fp
Nv
0
- T=300 K WFp nm gia mc nhn Wa v nh vng ha tr WV
- Nhit cao s lm WFn tng v pha WFi = Wg/ 2
WFn Germani-n WFp Germani-p

WC=Wg
Wd Wg/2
18
Nd=10 1014 1016 Na=1018
1014 1016
Wg/2 Wa
0
0 TK 0 T0K
Hnh 2.10 V tr mc Fermi trong VLBD
V d: Hy tnh mt electron trong Silic nu mc Fermi cch di mc vng
dn mt khong 0,2 eV nhit phng.
Gii:
Ta bit mc Fermi trong VLBD c tp cht loi n c xc nh bi h thc:
NC
W = W kT ln
F g
Nd
Nc Nc 0,2
T : kT ln = 0,2(eV) ; ln = = 7,69
Nd Nd 0,026
.4
Nd = Nc exp(7,69) = Nc.4,57.10
28 .3 25 .3
Vi Nc = 2,5.10 (m ) th Nd = 1,14.10 (m )
V d: Mt thanh Silic tinh khit c pha tp cht loi n, in tr ca n 200C
gim xung 1% gi tr in tr ca thanh Silic tinh khit. Tnh khong chuyn dch
ca mc Fermi khi v tr ban u ca n.
Gii:
Nd c th xc nh t gi tr ca in dn sut: n = 100.i
e.Nd. = 100.e.n ( + )
n i n P
+
n P
Nd = 100.n .
i
n
Wg
Bit rng: Ni = Nc. exp
0,052

W
n + P g
Vy: Nd = 100. .Nc . exp

0.052
n
Khong di ca WF khi v tr ban u ca n bng:
W
g Nc 1,1
n
kT ln = 0,55 0,26ln + = 0,128(eV)
2 Nd 100 n + P 0.052

( )
0,128
So snh vi mc nng lng vng cm: = 12%
1,1
2.1.3 C ch ca s khuych tn v s chuyn dch ca ht mang in
Khi khng c in trng ngoi t ln cng c th c dng in chy trong vt liu
do gradien nng ht mang in trong tinh th
Xt mt vch c b dy x , b mt A
dp
P(x) l p sut ti x, P + .x l p sut ti X + x , chnh lch p sut l:
dx
dP dP
P(x) P(x) + .x .A = .x.A

dx dx
N
P dP
P+ x
dx
x
x x+ x
x
Hnh 2.11 S khuych tn ca ht t do

Gi N l mt ht mang in. Th tch ca khi c b mt A, b dy x l tch A.
x v tng s ht trong n l N.A. x
1 dP
Lc tc dng ln mt ht Fd = . lc Fd ny lm cho ht chuyn ng c gia
N dx
tc tng t nh tc dng ca in trng.Goi la thi gian trung bnh gia 2 lan
va ap.
Trong khi chuyn ng c xy ra s va chm nhng cc ht vn c mt vn tc nh
F dP
D
hng no : v = a . = . = . [m/s]
D D
m m.N dx
p sut P t l vi mt in tch N v nhit T: P =N. kT
.kT dP 1 dN
Vy c th vit: vD = . = D. .
m.N dx N dx
.kT
Vi D l h s khuch tn D= [m2/s]
m.
1 dn dn
-VLBD loi n: v = D. . ; JDn = nevDn = e.Dn.
Dn n
n dx dx
1 dp dp
-VLBD loi P: vDP = DP. . ; JDP = nevDP = e.DP.
p dx dx
H s khuch tn D ni ln kh nng ca ht mang in chuyn ng qua tinh th,

tng t nh linh ng ni ln kh nng chuyn ng ca ht mang in.
m m kT
Ta c: = = D. hay D = ( ).
e kT e
D D kT
P n
Vy: = = (Phng trnh Einstein)
e
P n
Trong trng hp tng qut s khuch tn tun theo phng trnh ca nh lut
N N
Fick: = (D. )
t r r
Phng trnh ny cho php ta xc nh nng ht dn, su khuch tn, thi

gian khuch tn
2.1.4. in dn sut ca cht bn dn ph thuc vo nhit
in dn sut trong VLBD tinh khit tng t l thun vi nhit .
Hnh 2.12 S ph thuc vo nhit ca n i , p i trong Si ,Ge, GaAs

in dn sut trong VLBD loi n c xc nh bng: = e.n n
Trong n l mt electron trong bn dn.
Khi nhit cn thp, cng vi s tng nhit (tc l tng nng lng nht) mt
cc electron s tng do s ion ho cc donor (on 1-2). dc ca on ny
c trng cho nng lng ion ha ca tp cht.
Tip tc tng nhit , nng cc electron t do gn nh khng tng na (on 2-

3) v lc ny tt c cc tp cht b ion ho, cn xc sut ion ho bn dn ring th
rt nh. Hai on 1-2 v 2-3 l s dn in ca tp cht ca bn dn.
Khi nhit tng tng i cao (on sau im 3) nng cc ht in tch t
do s tng mnh vi nhit do s vt qua vng cm ca cc electron vng ha
tr vo vng dn. nghing ca on ny c trng cho rng vng cm ca
bn dn; nhit m ti bt u xut hin s dn in ring s cng nh nu
rng ca vng cm bn dn cng nh.
ln n
3
2
1/T
Hnh 2.13 S ph thuc vo nhit ca mt electron trong bn dn

Nguyn tc hot ng ca cc linh kin bn dn da trn s dn in ca tp cht
nn s dn in ring s ph hy qu trnh lm vic bnh thng ca linh kin. Nh
vy nhit tng ng vi im 3 l nhit lm vic ti a ca linh kin bn dn
loi n vi mt tp cht donor Nd; nu tng mt tp cht th cc on tng
ng vi s dn in ca tp cht ca bn dn s dch chuyn ln trn. Khi mt
tp cht ln th nng lng ion ha tp cht tin v 0. Bn dn nh vy c gi
l bn dn suy bin (bn kim loi).
2.1.5. S mt cn bng ca ht mang in v c ch ti hp
S sinh ra l trng v electron t do c ngha l c mt lin kt b ph v, t
electron c gii phng tr thnh t do bn trong tinh th. Trong qu trnh
chuyn ng n s gp mt l trng do electron khc li, in vo l trng, mi
lin kt c thit lp li. l hin tng ti hp ca electron v l trng hay hin
tng hy cp. Trong khong thi gian bng nhau s ln sinh cp v hy cp bng
nhau. Thi gian t lc sinh ra cp cho n lc hy cp gi l tui th. Xc sut hy
cp t l vi s electron n v s l trng p tc l t l vi tch s np.
Khi electron vng dn tr v vng ho tr s ti hp vi l trng. Qu trnh ti hp
c th l qu trnh c bc x, c th l qu trnh khng c bc x.
- Trong qu trnh ti hp c bc x, photon c pht ra. C hai loi bc x:
bc x t pht v bc x knh thch.
Trong qu trnh bc x t pht, electron v l trng ti hp vi nhau v pht ra
photon, m khng c phton t trc. c im ca bc x t pht l photon c
pht ra khng c quan h pha. nh sng pht ra t LED l do s bc x t pht.
Nu photon hin hu trong qu trnh ti hp ca electron l trng, th photon ny
lm gia tng nng lng c bc x, v qu trnh bc x trong trng hp ny gi
l bc x kch thch. c im ca qu trnh bc x kch thch l photon c pht

ra ng pha vi photon hin hu. Bc x t laser bn dn l bc x kch thch.
- Electron v l trng c th ti hp vi nhau m khng c bc x, nng
lng pht ra thnh nhit hoc gy nn dao ng tinh th. C hai loi ti hp khng
c bc x:
+ Qu trnh khng c bc x do sai lch mang tinh th.
+ Qu trnh ti hp Auger.
Qu trnh ti hp khng c bc x do sai lch mng tinh th
Trong vt liu bn dn hon ton khng c khuyt tt, trong vng cm khng c
trng thi cho php no i vi electron. Nhng nu trong vt liu c tp cht hoc
do mun hoc ngoi mun, th trong vng cm c mc nng lng ca in tch.
Nhng mc nng lng trong vng cm l mc nng lng ca electron c nh
v trong mt khng gian c hn gn ch sai lch. Khi nhng electron t do chuyn
ng trong nhng vng cho php c th b sa vo by do sai lch mng tinh th.
Hnh 2.14 Qu trnh electron ri vo by v ti hp (khng c bc x) vi l

trng.
c electron ri vo by v to ra nhit Wth vo mng tinh th.
d electron ti hp vi l trng vng ho tr v to ra nhit Wth.
Trn hnh 2.14 l s m t qu trnh electron ri vo by, v qu trnh c
gii phng ra khi by trong ti hp vi l trng. Qu trnh ti hp ny khng c
bc x, nng lng c gii phng ra l nhit nng. Qu trnh ri vo by cng
c th xy ra vi l trng, khi l trng chuyn ng n gn phm vi c sai lch
mng.
S ti hp khng c bc x do sai lch mng gi l s ti hp Shockky - Read -
Hall (vit tt: s ti hp SRH). S ti hp ny c tm quan trng b mt ca vt
liu v b mt thng c nhiu sai lch mng.
S ti hp Auger
Electron vng dn ti hp vi l trng vng ho tr, gii phng nng lng,
nhng nng lng ny khng bin thnh quang nng m cung cp cho mt electron
vng dn, lm cho nng lng ca electron ny c nng cao hn.Ta gi
electron ny l electron nng. Electron nng thng gii phng nhit nng. Qu
trnh ny gi l qu trnh Auger, l mt qu trnh ti hp khng c bc x, c tm
quan trng vt liu bn dn c nng lng vng cm nh. Tc ti hp Auger t
l vi np2 hoc pn2, ty thuc vo in tch nng l electron hoc l trng.
2.1.6. Hin tng quang v quang in trong cht bn dn
Tnh cht quang hc ca vt liu bn dn
Khi chm tia sng c chiu vo mng tinh th ca VLBD th mt phn nng
lng nh sng s b hp th. Ty theo cu trc vng nng lng ca tng loi
VLBD m xy ra cc c ch hp th khc nhau:
- Hoc lm cho electron nhy t vng ha tr ln vng dn in to ra cp ht
dn.
- Hoc ion ho cc nguyn t tp cht, lm xut hin cc loi ht tng ng.
- Hoc trao i nng lng gia cc lng t nh sng (photon) vi dao ng
nhit ca mng tinh th (phonon).
- i vi VLBD cu trc vng nng lng c nhiu cc tr (GaAs), nh sng c
th lm electron nhy t y vng nng lng ny ln y vng nng lng cao hn.
VLBD pht quang
Khi mt electron mc nng lng ban u W1, chuyn di xung mc nng lng
thp hn W2 th c hin tng pht quang. Nng lng nh sng c pht ra bng
hiu ca hai mc nng lng:
c
hf = W1 W2 = h

Khi mt electron vng dn tc hp trc tip vi l trng vng ho tr, th hiu
ca hai mc nng lng chnh l nng lng vng cm.
c
Wg = h
g
T y,ta c:
hc 1,24
g = = (m)
Wg Wg (eV)
g l bc sng ca nh sng c pht ra.
V d: GaAs c Wg = 1,44eV, th nh sng c pht ra c bc sng bng:
1,24
g = = 0,86 m
1,44
C hai loi vt liu bn dn: l vt liu bn dn trc tip nh GaAs v vt liu
bn dn gin tip nh Si, Ge. vt liu GaAs electron ti hp trc tip vi l trng,
nng lng ca electron trc tip chuyn i thnh quang nng, nh m t trn
th trn hnh 2.15a. vt liu Si, Ge th ngoi s bin i nng lng cn c s
bin i ng lng xy ra ng thi nh m t trn hnh 2.15b
Hnh 2.15
a) S ti hp trc tip ca electron vi l trng trong vt liu bn dn trc tip.
b) S ti hp v s bin i ng lng trong vt liu bn dn gin tip.
Hiu sut pht sng ca vt liu bn dn gin tip rt nh, nng lng c
chuyn i thnh nhit nng l ch yu.
h
Electron b mt ng lng c gi tr bng: , a l hng s tinh th. ng
a
lng ca nh sng c pht ra bng:
Wph hf h
pph = mc = = = (2.1)
c c
So snh ng lng b mt vi ng lng ca nh sng c pht ra :
ong lng b mat cua electron h / a
= (2.2)
ong lng cua anh sang h/ a
nh sng mt nhn thy c c 10 -6m v hng s tinh th c
a 10 -10m, th t s (2.2) l:
h 10 6 m
= = 104
a 10 10 m
Con s ny ni ln rng ng lng ca nh sng c pht ra ch l mt phn rt
nh ca ng lng b mt ca electron.
it pht quang (LED)
it pht quang (LED) l mt tip gip p-n lm vic vi in p phn cc thun,
electron c phun vo pha p v l trng vo pha n. Nhng ht thiu s ny ti
hp vi nhng ht a s trong vng trng. vt liu bn dn trc tip, qu trnh
ti hp l qu trnh ti hp c bc x. Cn vt liu bn dn gin tip th hiu sut
pht quang rt thp, nng lng gii phng ch yu l nhit nng.
Vt liu bn dn trc tip l GaAs. Ngoi ra, cn c nhng vt liu khc: GaxAl1-
xAs; In0,53; Ga0,47As; In0,52Al0,48As; InGaAsP; GaAsP. Nhng vt liu c nng lng
vng cm ln l ZnSe, ZnS, SiC, AlInGaP v GaN.
Cn ch rng cc hp kim nh GaAlAs v GaAsP tr thnh vt liu gin tip vi
mt s t l thnh phn .
Di y l phn tm tt ca cc vt liu dng ch to LED.
Tn vt liu Nhn xt
In1-xGaxAsyP1-y; x = 0,47y c mng tinh *C mng tinh th ph hp vi InP
th ph hp mng tinh th ca InP. *C di nng lng bc x rng, c
2
Wg = 1,35 0,72y + 0,12y , eV th t t 0,8eV n 1,35eV.
*Cng ngh vt liu hon ton tin
tin c th ng dng trong vin
thng.
GaxAl1-xAs *C mng tinh th ph hp vi
Wg = 1,43 + 1,25x, eV GaAs
x 0,35 *Cng ngh vt liu hon ton tin
tin, c th ng dng vo mng

thng tin cng s, x nghip.
GaAs1-xPx *Vt liu ny tr thnh vt liu gin

tip vi x = 0,45
*Vi tp cht l n, LED vn lm
vic c mc du vt liu c tnh
cht gin tip, pht ra nh sng mu
xanh l cy (=0,55m)
*C th ch to nhiu vt liu khc
nhau nh: GaAs0,6P0,4 cho nh sng
mu ; GaAs0,35P0,65: N cho nh
sng mu cam; GaAs0,15P0,85: N cho
nh sng mu vng.
SiC, GaN, ZnSe, AlZnGaP c nng lng *Vt liu quan trng pht ra nh
vng cm ln, c th pht ra ng sng xanh sng mu xanh ( nhng linh kin
v tm, cc tm. hin th, b nh)
*Cng ngh vt liu cha hon
thin, nhng ang trn tin b
nhanh.
Vt liu bn dn trc tip c hiu sut bc x ln, cn vt liu bn dn gin tip th

rt nh. Tuy nhin, c th a tp cht vo vt liu bn dn gin tip lm cho vt
liu bn dn c hiu sut bc x c gi tr chp nhn c. Tp cht to ra mc
nng lng trong vng cm, v nu electron chuyn ng n mc ny th c th
hp th photon. Tuy nhin, hiu sut hp th v bc x vn thp hn so vi vt liu
bn dn trc tip. GaAsP l mt loi vt liu m c th a vo tp cht vi nhiu
mt khc nhau, t c nhiu mc nng lng hp cht trong vng cm, n
c s dng ch to LED.
*Nguyn l lm vic ca LED
LED l mt it p-n lm vic vi in p thun. Electron v l trng c phun qua
mt tip gip p-n: electron c phun t pha n sang pha p, cn l trng t pha p
sang pha n.
Hnh 2.16 S cu to ca LED

Bc x nh sng do s ti hp c bc x ca in tch c phun trong tip gip p-n
c in p phn cc thun. L trng c phun sang pha n, pht ra photon nhng
photon khng pht ra ngoi, m b hp th tr li. Electron c phun sang pha p,
pht ra photon gn b mt, do c pht ra ngoi.
khc phc hin tng photon b hp th tr li sau khi c pht ra, chng ta
a tp cht Si vo GaAs, Si to ra mc nhn trong vng cm gi l tm ti hp.
Electron vng dn s chuyn ng n tm Si ti hp vi l trng, pht ra photon
c bc sng 950 nm, trong lc s ti hp gia photon vng dn v l trng
vng ho tr pht ra photon c bc sng 860 nm.
S trn hnh 3.17 m t kt qu ca s ti hp ca electron vng dn vi tm ti
hp l tp cht Si. Hin tng ti hp ny gi chung l ti hp gia mc vng dn
vi mc nhn (cn c s ti hp gia mc vng dn vi mc cho).
Hnh 2.17 S ti hp c bc x trong LED bng GaAs

a) Ti hp gia vng dn v mc vng ho tr (ti hp trc tip)
b) Ti hp gia mc vng dn v tm ti hp Si (ti hp sau tm ti hp)
nh sng c bc sng 950 nm, tng ng vi nng lng nh hn nhiu Wg ca
GaAs. Do vy GaAs khng hp th tr li photon ny, nh hiu sut c ci
thin rt nhiu.
GaP (Wg = 2,26eV; g = 549nm) cng l vt liu ch to LED, pht ra nh sng
mu xanh l cy hoc c khi mu , ty thuc vo loi tp cht. y l loi vt liu
gin tip, cn a vo tp cht nh N hoc Bi c s ti hp c bc x.
S kt hp ca GaAs vi GaP cho GaAs1-xPx (gali-asen photphit) cng l vt liu
dng ch to LED. Bng cch iu chnh gi tr ca x, c th iu chnh gi tr
ca Wg t 1,44eV (vi x= 0) n 2,26eV (vi x = 1). nh sng nm trong di hng
ngoi n xanh l cy. Vi 0 < x < 0,4; vt liu c tnh cht vt liu trc tip, hiu
sut bc x cao. V d : LED c ch to bng GaAs0,6P0,4 (Wg = 1,8eV) pht x
nh sng c cng bc x ln, cho nh sng mu . Vi x > 0,44 vt liu tr
thnh vt liu gin tip, nhng nu pha tp cht N th c th bc x nh sng trong
di vng v xanh l cy. Cc vt liu c ba hoc bn thnh phn, nh (Al, Ga) nh
sng, (In, Gn) nh sng, (In, Ga) (As, P) dng ch to LED trong h thng cp
quang.
Vt liu hp th quang
Khi chiu nh sng ln cht bn dn m nng lng nh sng ln hn nng lng
vng cm, th in tch trong vt liu s c gia tng, tc l electron vng ho tr
chuyn ng ln vng dn, t in dn sut tng ln.
iu kin hp th nh sng l:
hfmin Wg
Tn s nh nht fmin ng vi bc sng nh sng ln nht max :
c
h wg
max
max
hc
=
( )(
6,625.10 34 Js . 3.10 8 ms )
Wg Wg
Wg thng c tnh vi eV, do vy:

(6,625.10 34 Js).(3.10 8 ms) 1,24.10 6 m 1,24 m
max = =
1,69.10 19 W g W g (eV ) W g (eV )
1,24
Tm li: max m
W g (eV )
C ngha rng vt liu quang in t c mt gi tr nng lng vng cm Wg(eV),
1,24
c th hp th nh sng c bc sng nh hn hoc bng vi m
W g (eV )
Trn y l nguyn l lm vic ca vt liu bn dn c th hp th nh sng.
Sau y l mt s vt liu bn dn v bc sng nh sng ln nht c th thu c:
Vt liu bn dn max (nm)
Ge 1800
Si 1200
GaAs 880
GaP 550
CdS 520
Bit rng ph nh sng mt nhn thy c nm trong phm vi t 400 nm n
700nm. Nh vy cc vt liu k trn c th dng ch to nhng linh kin pht
sng trong ph nh sng mt tri nhn thy c n gn hng ngoi.
ng thi vi s sn sinh in tch do tc dng ca nh sng cng nh sc sn sinh
ca in tch do tc dng ca nhit, to ra hin tng nhiu cho linh kin d tm nh
sng.
Nh bit trc mt in tch trong vt liu bn dn tinh khit ph thuc vo
nng lng vng cm v nhit theo hm:
3 Wg
ni = AT 2
exp
2kT
Nu vt liu c nng lng vng cm nh th c th pht hin c nh sng c
bc sng ln, nhng ng thi mt ni s ln, gy nhiu ln, nu khng h thp
nhit lm vic. V d vt liu InSb c Wg=0,2 eV, c th d tm nh sng c
bc sng khong 6000 nm, nhng s in tch sinh ra do nhit, nhit phng,
cng tri hn s in tch sinh ra do nh sng, ngha l in dn sut ti khng thay
i my di tc dng ca nh sng. Do vy cn phi h thp nhit xung n
77 0K = -196 oC, l nhit ca nit lng. nhit ny ni s gim vi 106 ln so
vi nhit phng, v vy nhiu s gim nhiu.
P P. 1
Quang thng : = = ( 2 )
hf hc sm
Trong P: Cng sut nh sng trn n v in tch, W (Vi P cho quang
m2
thng tng tuyn tnh theo bc sng ); cng i su vo vt liu, cng sut nh
sng s suy gim, v suy gim theo hm s m c s e, c th vit:
P(x) = P(0).exp(-x)
: P(0): Cng sut nh sng trn b mt ca vt liu, x = 0
1
: H s hp th ( )
cm
x: B dy vt liu tnh t b mt (cm)
T cng c th vit:
( x ) = (0). exp( ax )
nh sng c hp th vo lm sinh ra nhng cp electron l trng. Mc sinh
ra in tch k hiu l GL ( 1 3 ) v c nh ngha bng h thc:
m
.P( x ) 1
GL = = . ( x ) ( )
hf s.m 3
T s sa nh sng ti so vi nh sng hp th l
I ti
= 1 exp( L )
I hapthu
B dy L cn thit phi c ca vt liu hp th nh sng l
1
L>

3 1
Si c h s hp th = 10 cm , b dy cn thit i vi Si l L > = 10 3 cm = 10m

4
GaAs c h s hp th = 10 cm , b dy cn thit i vi GaAs l
1
L> = 10 4 cm = 1m

V d: H s hp th nh sng gn b cc vng nng lng ca GaAs bng
104/cm v ca Si bng 103/cm. Hy tnh b dy cn thit ca GaAs v ca Si nu
nh sng hp th bng 90% nh sng ti?
Gii: Bit rng t s nh sng ti v nh sng hp th c xc nh bng:
I ti
= 1 exp( L )
I hapthu
1
: : H s hp th( )
cm
L: B dy cn thit (cm)
T s ny bng 90%. T , c th xc nh b dy L
-L = ln(1-0,9 ) = ln 0,1 = -ln10 = -2,3
2,3
L=

2,3
i vi GaAs: L = 4 = 2,3.10 4 cm = 2,3m
10 / cm
2,3
i vi Si: L = 3
= 2,3.10 3 cm = 23m
10 / cm
Diot quang:
Khi chiu nh sng vo tip gip p-n, nhng cp electron l trng c sn sinh
v to ra dng in gi l dng quang in.
Dng quang in c xc nh bng:
IL= eA(Lp+Ln)GL( A )
: e: in tch ca electron
A: Tit din ca it (m2)
Lp, Ln : Chiu di khuch tn ca l trng ca electron (m)
1
GL: Mc sn sinh in tch do nh sng, ( )
sm 3
Hnh 2.18 S cu to it quang

Khi nh sng chiu vo ca s ca it quang p-n, vi bc sng
1,24
< g = (m ) , th sn sinh ra nhng cp electron -l trng. Nhng cp electron
wg
l trng sinh ra ngoi vng trng mau chng ti hp vi nhng in tch thiu
s sinh ra do nhit. Cn nhng electron - l trng sinh ra trong vng trng th do
tc dng ca in trng , chng b tch bit, l trng b in trng y v
pha p, v electron b y v pha n, nh trn hnh 2.19
Hnh 2.19 L trng b in trng y v pha p, v electron b y v pha n

Do electron v l trng t c kh nng ti hp, v nh vy to ra dng quang in.
Nu dit c in p phn cc nghch, th dng quang in b sung vo dng in r,
lm tng dng in chy trong mch, v c s dng pht hin nh sng: dng
quang in chy qua mt in tr, tn hiu in p c ly t in tr, nh l tn

hiu pht hin nh sng.
Pin mt tri:
Pin mt tri l it p-n chuyn i quang nng thnh in nng. Pin mt tri lm
vic khng c ngun in cung cp, in p v dng in ca pin do nh sng to ra.
ng knh ca pin thng khong 150 mm, nh vy pin c b mt ln nhn
nh sng. Lp n rt mng, ch bng 0,25m. Tip xc mt trn lm bng vng
hoc nhm, c dng tip xc ngn. trn tip xc c ph mt lp ngn phn chiu
nh sng.
Hnh 2.20 Cu to ca mt pin mt tri (Front metal contacts: lp tip xc trn

bng kim loi, antireflection coating: lp ph cht khng phn x, n-type crystal:
bn dn loi n, p-type crystal: bn dn loi p, rear metal contal: lp tip xc di
bng kim loi, electron- hole pairs formed: nhng dng cp electron - l trng,
holes drift to p region: l trng tri dt v min p, electron drift to n region:
electron tri dt v min n, current flows in external circuit: dng in chy trong
mch ngoi)
Vt liu ca tip gip p-n l Si, Ge, Ga-As, CdS.
Trong s vt liu trn, th GaAs cho hiu sut ln nht, nh m t trn th trn
hnh 2.21. Pin mt tri lm bng GaAs c hiu sut bng 28% trong khi Si cho
hiu sut 25% v Ge th ch cho 10%. Nhng Ga-As t tin hn rt nhiu v khng
lm thnh tm mng c din tch ln c, v vy Si c s dng nhiu hn, m
pin mt tri bng GaAs ch c s dng trong trng hp dng lm pin hi t,
tp trung nng lng.
Hnh 2.21 Hiu sut ln nht ca pin mt tri lm bng Si, Ge, GaAs, CdS
Trong thc t, hiu sut ca pin mt tri lm bng Si nm trong khong 10%-25%.
Mt Pin mt tri bng Si c din tch 200 mm2 c th c hiu sut bng 15% cho
cng sut 10 mW vi in p 0,6 V di nh sng mt tri ban tra. Nhng nu
dng nhiu pin, mi pin c ng knh 50 mm, ghp ni tip v song song thnh
mt b pin cho c cng sut n 1 kW vi in p 28V.
in p khng ti ln nht ca pin mt tri:
kT I
U OC = ln1 + L
e IO
UOC c gi tr thng ng vi nng lng vng cm, i vi Si, UOC 0,5V
Dng quang in IL c xc nh bng:
IL= eA(Lp+Ln)GL ( A )
Dp Dn
Dng in bo ho I0 c xc nh: I0 = I0A = e n 2i A + (A)

L p .N d LnNa
trng thi ngn mch (U=0) c dng in ln nht, dng in ngn mch:
( )
I = I SC = I L I D = I L I 0 e 0 1 = I L
ID (dng in it ) c xc nh bng:
eU
I D = I 0 exp 1 (A)
kT
Cng ca dng in ngn mch c vi chc miliampe.
V d: Hy tnh in p khng ti ca pin mt tri bng Si c nhng thng s sau
y: (nhit T = 300 0K)
Tit din : A = 1,0 cm2
Mt nhn Na = 5.1017/cm3
Mt cho Nd = 1016/cm3
H s khuych tn ca electron Dn = 20cm2/s
H s khuych tn ca l trng Dp = 10 cm2/s
Thi gian ti hp ca electron n = 3.107s
Thi gian ti hp ca l trng p = 10-7s
Dng quang in IL = 25mA
Gii:
in p khng ti ca pin mt tri c xc nh:
kT I
UOC = ln (1+ L )
e I0
: I0 l dng in bo ho.
Dp Dn
I0 c xc nh theo: I0 = I0A = e n 2i A +

L p .N d LnNa
1
Bit rng L = (D) 2 , t :
Dp D 2 1 Dn 2 1
1 1
2 Dn 2 .
+ .
p
I 0 = en1 A + = en1 A
1
( D ) 2 .N (Dn n ) 12 .N a N N
n
p
p d a
d
-19
10 12 1
10 2
1
20 2 1
I0 = (1,6.10 )(1,38.10 ) .(1) 7 . 16 + 7 17

10 10 3.10 5.10
I0 = 3,296.10-11 A
in p khng ti ca pin mt tri:
25.10 9 25.10 3
UOC = 0,026 ln (1+ ) 0,026 ln = 0,52 V
3,206.10 11 3,296.10 11
C th dng ng c tnh vn-ampe (U-I) ca pin mt tri nh th trn
hnh 2.22
Hnh 2.22 a/ im cng tc Q b/ Cng sut ln nht

Khi in tr R thay i, th cng dng in bin thin t dng in cc i ISC
(vi R=0 v U=0), n 0 (vi R= v U=UOC ) nh thy trn hnh 2.22a; ti hai
trng thi cc tr , cng sut cung cp cho ph ti bng khng. ng vi R c gi
tr khc vi hai cc tr (0 v ), dng in c cng bng:
U
I =
R
Trn ng c tnh U-I, l giao im ca ng ph ti v ng c tnh U-I,
l im cng tc Q. ti im ny, U v I c gi tr nht nh, v ph ti nhn
c nng lng t pin mt tri.
Cng sut: P = UI
eU
P = UI L UI 0 exp 1
kT
Cng sut c gi tr cc i khi:
dP dU
= 0 =U + I
dI dI
dU U
T =
dI I
Ni cch khc, c cng sut pht ra ln nht, th nghing ca ng ph ti
bng vi gi tr m ca dc ca ng c tnh U-I ti im cng tc, nh din
t trn hnh 2.22b.
Cng sut ln nht l:
Pmax=UmIm (23)
Cng sut ny nh hn gi tr UOCISC. Cng sut ln nht c m t bng din tch
hnh ch nht trn th Hnh 2.23.
Hiu sut ca pin mt tri: l t s ca cng sut in do pin mt tri pht ra so vi
cng sut nh sng m pin hp th. Nu pin mt tri lm vic ti u, th hiu sut
c tnh nh sau:
Pmax U I
= 100% = m m 100%
Pin Pin
Pin l cng sut ca nh sng mt tri chiu ln pin mt tri
UmIm
H s in y: F f =
U oc I sc
H s in y cng ln, chng t rng gi tr ca cng sut ln nht, UmIm cng
gn vi gi tr UocIsc. H s in y thng c gi tr khong 0,7.
Vy hiu sut c th tnh bng:
(U oc I sc ) F f
= 100%
Pin
Cng sut ca nh sng mt tri khong 1kW/m2 thi im ban tra ng xch
o.( nh sng mt tri vo ban tra ng xch o c gi l nh nng AM1;
AM l vit tt ca t air-mass ; AM1 tc l air-mass 1)
Dng in ngn mch Isc:
Isc=IL
IL l dng quang in, nh xc nh:
IL= eA(Lp+Ln)GL
L p = (D p p ) 2 v Ln = (Dn n ) 2
1 1
M
Do :
(
I L = eA (D p p ) 2 + (Dn n ) 2 GL
1 1
)
Nh vy, pin mt tri c hiu sut ln, th pin phi c b mt A hp th nh sng
ln, mt khc phi c ch to bng vt liu m tui th ca in tch phi ln, s
ti hp ca in tch tng i nh.Vt liu bn dn gin tip nh Si c t l ti hp
ca in tch nh.
V d:
Mt pin mt tri c din tch 1cm2 v dng quang in IL = 25 mA, dng in bo
ho 300K: I0 = 3,66.10 -11A.
a) Hy tnh in p khng ti v dng in ngn mch ca pin.

b) Hy tnh cng sut pht ra c ca pin vi h s in y bng 0,8.
c) Mun c tng cng sut bng 10 W v in p 10V th phi ni bao nhiu pin v
ni song song bao nhiu dy pin, tnh tng pin cn thit.
Gii:
a) in p khng ti:
kT I 25.10 3
UOC = ln (1+ L ) = 0,026 ln (1+ )
e I0 3,66.10 4
UOC 0,026 ln 6,83.108 = 0,53 V
Dng in ngn mch
ISC = IL = 25 mA.
b) Cng sut ca pin pht ra c:
P = Ff.UOC.ISC = 0,8. 0,53.25.10-3 = 10,6.10-3W = 10,6 mW
c) S pin mc ni tip c 10V
10V 10V
Ch rng s pin khng phi tnh bng m phi tnh bng
0,53V Um
Bit rng:
P = Ff .UOC.ISC = UmIm
C th vit:
1 1
( F f ) 2 U OC .( F f ) 2 .I SC = U m I m
Vy t :
1
Um = (Ff) 2 UOC = 0,8 .0,53 0,9.053 = 0,47V
S pin ni tip l:
10V
N(ni tip) = 21 pin
0,47V
Cng sut ca mt dy ni tip l:
p = (10V)(25.10-3.0,9) = 225.10-3 W
S dy ni song song:
10 W
N(song song) = = 44,4 45 dy
0,225
Tng s pin: 21 . 45 = 945 pin.
Si quang dn
* Nguyn l truyn dn tn hiu nh sng bng si quang dn:
Si quang dn l mt h thng dn sng hnh tr, trong nh sng c truyn
dn nh c s phn x ton phn.
Cu trc c bn ca si quang dn gm c nhn tm v v bc bn ngoi. Vt liu
lm nhn c h s chit xut n 1 ln hn h s chit xut n 2 ca vt liu lm lp bc
ngoi. Bn ngoi lp bc ny l v che ch, trnh tia sng l lm nhiu.
Hnh 2.23 S cu trc ca si quang dn

H s chit xut ca nhn n 1 > n 2 h s chit xut ca lp bc. Nu B < A th nh
sng c phn x ton phn v c truyn dn trong si quang dn. Nu B > A
th nh sng b mt i, khng truyn dn c trong si quang dn.
*Tnh cht ca si quang dn
Cc thng s thuc v tnh cht ca si quang dn, l:
1/ Gc nhn: K hiu A l gc nhn, iu kin tia sng phn x ton phn l tia
sng c chiu t ngun n si quang dn vi gc ti c gi tr nh hn gc
nhn < A . Gi tr ln nht ca gc nhn bng:
1
A = sin 1 ( ( n 12 - n 22 ) 1 / 2 )
n0
n2
2/ Gc ti hn: i 1max= sin 1 ( )
n1
3/ S m: i lng ( n 12 - n 22 ) 1 / 2 gi l s m; k hiu NA(numerical operture):
(NA) = ( n 12 -n 22 ) 1 / 2
4/ Gc m: A = sin 1 [( n 12 - n 22 )1/2 ]
*Khi nim v h thng thng tin bng si quang dn
Trn hnh 3.24 l s h thng thng tin bng si quang dn.
Hnh 2.24 Nhng b phn trong h thng thng tin bng si quang dn.
Tn hiu (ting ni, s liu ) c m ha thnh tn hiu nh sng. Qu trnh trn
c thc hin nh b m ha v ngun nh sng. Tn hiu ( nh sng ) c truyn
vo si quang dn, si quang dn l thnh phn cha kha lm cho vic thng tin
bng nh sng c th thc hin c. Trong khi tn hiu c truyn dn theo si
quang dn, c th cn phi chuyn vo nhng knh khc, iu ny cn b ng ct
mch. Khi tn hiu c truyn dn n im cn thit, c tch sng bng b
tch sng quang hc. Tn hiu c khuych i v c thu nhn.
Tn hiu quang b suy gim trong qu trnh c truyn dn cn t nhng b
chuyn tip ti sinh tn hiu quang.
*Cng ngh ch to si quang dn:
Cng ngh ch to si quang dn l cng ngh ngng t ha hc ca hi (Chemical
Vapor deposition CVD). Mt hn hp khi c thi qua mt b mt c nung
nng n nhit cho cht kh tc dng hoc ngng t trn b mt to
thnh mt lp bm cht trn b mt. Cng ngh ny trong vic ch to si quang
dn c m t trn hnh 2.25
BCl3
Hnh 2.25: Cng ngh CVD sn xut phi ca si quang dn

Cc thnh phn cht kh c thi vo bung ngng t c t mt ng thy tinh
thch anh siu sch v c nung trong nhng vng c nhit khc nhau, khi cc
cht kh chy qua ng thy tinh th chng c tc dng ha hc vi ng v ngng t
thnh lp thy tinh.
Phi: c ch to theo phng php CVD c cha nhiu ion OH. Chng c vai
tr chnh trong vic gy nn suy gim trong si quang dn, v vy cn phi kh sch.
Phi c a vo mi trng kh SiCl2 nhit 1700 0K( 1420C) trong thi
gian 5 gi. Mt ca ion OH c gim t 30 phn triu xung 0,5 phn triu.
Phi c chiu di 1m v ng knh 2cm. Sau khi phi c ch to, th c
ko thnh si.
2.1.7. Hin tng nhit in v hiu ng Hall trong cht bn dn
Hin tng nhit in
Trong vt liu bn dn, cng ging nh trong kim loi, di tc ng ca nhit
s xut hin hiu in th, thng c gi l sc nhit in ng, s thay i nhit
gy nh hng n s thay i nng ht dn trong lng vt liu, h qu ca
n lm xut hin s khuch tn cc ht dn t ni c nhit cao ti ni c nhit
thp hn. Mt phng php xc nh loi in dn l t mt u bn dn nh
hnh v 2.26
U
Hnh 2.26 Hin tng nhit in
Nu bn dn loi p, th u b t v c nhit nng ngoi nn mt s ln cc in
t s i t vng ho tr sang mc nhn ca tp cht.T u nng bt u c s
khuch tn sang u lnh l ni in t t do t hn, do u nng tch in

dng, u lnh tch in m.
Hiu ng Hall
Bng cch o h s hiu ng Hall, c th xc nh mt v loi ht mang in
trong VLBD loi n v loi P.
Nu thanh bn dn c dng in Jx chy qua c t vo t trng BZ th trn cc
mt cnh vung gc vi mt (xOy) s xut hin mt in p. l hiu ng Hall.
Nu o c in p ny, ta c th xc nh khng ch du ca ht dn m cn tnh
c nng v xc nh c linh ng ca ht dn.
z
Bz
O
V
x Jx
y
Ex

Ey E
Hnh 2.27 Hiu ng Hall

in trng Ex lm in tch chuyn ng (c dng Jx) vi vn tc vx
T trng BZ tc dng ln in tch chuyn ng bng lc Lorentz FL.
Lc y do tc dng ca in trng theo phng y (Ey) s cn bng lc Lorentz
e.EY = e. VX.BZ hay EY = VX.BZ
1
-Loi n: VX = Jx /(-ne) E = J .B
y X Z
en
1
-Loi p: VX = Jx /(pe) E = J .B
y X Z
ep
Ey 1 1
H s t l RH = = = gi l hng s Hall
JX .BZ en pe

in trng tng cng trong vt liu E = EX + EY lch vi trc x mt gc H gi
l gc Hall: EY vX .BZ
tg = = = .B
H Z
EX EX
Gia hng s Hall v linh ng c quan h

JX
v ep 1
X
p = = = . = RH.
JX
EX ep

Nu o c RH v bit (in dn sut) ta bit c linh ng (o c RH
bng cch o hiu in th U H ca mu VLBD)
Trong VLBD va loi n va loi p: dng in chy theo phng trc y l Ey c
th in t bng: e.(p.v n.v )
P n
J = .E = e.(p.v n.v )
Y Y P n
2
Ta c: v P = P .E y = P (E x .tg H ) = P .E x .( P .B z ) = .E x .B z
v n = n 2 .Ex .Bz
2 2
Vy: .E = e(p. n. )E .B
y P n x z
2 2 2 2
Ey e(p. n. )E .B e.(p.P n.n )
P n x z
R = = = 2
H
JxBz .Jx .Bz
2 2 2 2
e(p.P n.n ) p.P n.n
m = e(p.n + n.P ) nn RH = 2 2
= 2
e (p.n + n.P ) e(p.n + n.P )
V d: Mt thanh Germani 10mm 1mm 1mm t trong mt t trng 0,2 T. in
p t trn 2 u chiu di l 1mV, dng in 43,6 A. in p Hall o c l
UH=7,8 V. Tnh linh ng in t n.
Gii:
in trng Hall:
6
7,8V 7,8.10 3
Ey = = 3
= 7,8.10 V/m
1mm 10
6
I 43,6.10 2
Mt dng chy theo chiu di: Jx = =
6
= 43,6A / m
S 1.1.10
Theo nh ngha, hng s Hall:
3
Ey 7,8.10 4 3
RH = = = 8,89.10 m / As
JxBz 43,6.0,2
1 21 3
Mt ca electron: n= = 7.10 m
e.RH
3
1mV 1.10
in trng theo chiu di x: Ex = = = 0,1V / m
3
10mm 10.10
J 43,6 1
in dn sut: = x = = 436(m)
E 0,1
x
linh ng in t:
4 4 2
n = RH. = 8,9.10 .436 = 3880,4.10 = 0,39m / Vs
Kim nghim: = n.e. n nn
436 2 2
n = = 21 19
= 38,88.10 = 0,39m / Vs
ne 7.10 .1,6.19
2.1.8. in dn ca cht bn dn t trong in trng c cng cao

W(eV) W(eV)
Wc Wc
Wv Wv
0 x 0 x
Hnh 2.28 Chuyn ng ca in t c th biu din bng ng nm ngang

cn mc nng lng l ng nm nghing.
Khi chuyn ng trong in trng, in t thay i ta v nng lng ca mnh.
Khi nhy t mc nng lng ny sang mc nng lng khc th ng nng ca n
tng ln mt khong w = eU (U l hiu in th trn qung ng in t i qua),
cn th nng ca in t th gim ng bng nh vy tng nng lng khng i.
in t khi tn x c th b mt nng lng tch ly v quay li mc thp hn.
thun tin, theo trc y ta k hiu nng lng ton phn tr i W, khi chuyn
ng ca in t c th biu in bng ng nm ngang cn mc nng lng l
ng nm nghing.
Trong in trng mnh s t l thun ca mt dng in vi in trng ngoi
khng cn ng na. l h qu ca s thay i in dn sut ca vt liu bn
dn. gii thch s thay i ny ta kho st nh hung ca in trng ln linh
ng v nng ht dn trong th tch ca bn dn.
nh hng ca in trng ln linh ng
Trong in trng yu, v c bn nh hng ca trng ch lm thay i hng vn
tc ca ht dn. Trong in trng mnh s tng gi tr ca vn tc trn di
bc t do c th so snh vi vn tc ca chuyn ng nhit, iu ny dn ti s

gim ca thi gian bc t do v s thay i linh ng ca ht dn.
nh hng ca in trng ln nng ht dn
Khi in trng ln hn 106 V/m trong vt liu bn dn bt u xut hin mt
lng tha ht dn v in dn sut ca n tng ln. C cc c ch sau ca s tng
nng ht dn:
*Ion ho nhit in
in trng ngoi lm thay i dng ca ro th gia cc nguyn t ca tinh th.
Nu khng c in trng ngoi th trong tinh th gia cc nguyn t s c trng
tun hon; di tc dng ca in trng mnh cao ca ro th s gim. Nu
l cao ca ro th ca nguyn t tp cht (v d donor) th s gim nng lng
mt lng dW dn n s tng nng ht dn trong vng dn:
dW
n = N c N d exp
2kT
S thay i nh dW gy ra mt s thay i ln nng ht dn (hin tng trn ch
xy ra khi in trng gn 106 V/m).
*Ion ho do va p:
in t t do di tc dng ca in trng mnh c th tch ly nng lng trn
di bc t do ion ho nguyn t tp cht hay nguyn t ca chnh vt
liu bn dn. Ion ho do va p lm cho s lng ht dn tng mnh, v in t va
sinh ra li b gia tc bi in trng, li ion ho cc nguyn t khc
*Hiu ng ng hm
in trng mnh gy ra nghing ln trn gin nng lng .Trong iu kin
ny in t c th di chuyn xuyn qua ro th hp m khng thay i nng lng
ca mnh. in trng lm xut hin hiu ng ng hm khc nhau i vi mi
vt liu bn dn, thng thng c 108 V/m.
2.2 Vt liu bn dn (VLBD)
2.2.1 Phn loi
Bn dn l nhm vt liu cc k a dng. N c hng trm nguyn t v vt cht
khc nhau. Bn dn c th l vt liu hu c hoc v c, tinh th, vt cht khng
nh hnh, cht rn, lng, c t tnh, hoc khng t tnh. Mc d c s khc bit c
bn v cu to v thnh phn ha hc nhng loi vt liu ny c tnh cht rt c
bit l kh nng thay i tnh cht di tc ng ca nng lng bn ngoi.
Trong gii hn ca gio trnh ny, VLBD c phn loi theo s sau:
Hnh 2.29 Phn loi vt liu bn dn.
2.2.2 Germanium
Germani c mu bc, khng tc dng vi khng kh, nc, HCl, H2SO4 long. N
rt him trn qu t. C mt trong nhng hp cht GeO2, GeS2, GeCl4. Trong qu
trnh sn xut kim loi mu, ta c th thu c Germani nh mt sn phm ph
GeCl4 + 2H2O = GeO2 + 4HCl
GeO2 + 2H2 = Ge + 2H2O
Cc phng php tinh ch Germani cng tng t nh tinh ch Silic
Kt qu iu ch ha hc nguyn liu ban u cho ta tetraclorua giecmani, tip tc
iu ch thnh ioxyt giecmani (GeO2) di dng bt trng. ioxyt giecmani c
kh trong l hydro nhit 650 oC -700oC thnh giecmani c dng bt xm.
Trong nhiu trng hp giecmani c iu ch trc tip t GeCl4 bng cch phn
tch hp cht ny nhit cao trong hi km. Bt giecmani c ra trong dung
dch axit v c thnh thi. Giecmani thi dng lm nguyn liu iu ch
giecmani c bit tinh khit bng phng php nng chy phn vng hay iu ch
trc tip n tinh th bng phng php ko nng chy.
sn xut dng c bn dn, thi giecmani c ct thnh phin mng, b mt ca
cc phin c ty ra loi tr cc khuyt tt lc gia cng.
in tr sut ca giecmani ty thuc vo nhit . Ngi ta nhn thy rng: trong
mt khong nhit nht nh, h s bin i ca in tr ca giecmani theo nhit
l m.
1 1
in dn sut ca giecmani thay i trong nhng gii hn rng t 10+3 . n
cm
1 1
10 2 . . iu ny c gii thch thng qua s tp trung ca tp cht v c
cm
tnh ring ca n.
Giecmani ha tan chm trong cht kim. nhit ln hn 200oC - 250oC,
giecmani phn ng mnh vi halogen.
Giecmani c dng sn xut cc b chnh lu dng in xoay chiu vi cc
cng sut khc nhau, cc loi transistor, giecmani cn dng ch ra b cm bin
sc in ng Hall v cc hiu ng t in o cng t trng, dng in,
cng sut, nhn i i lng trong cc dng c tnh ton k thut
Cc tnh cht quang ca giecmani cho php dng n lm transistor quang, in tr
quang, thu knh quang mnh (i vi tia hng ngoi), cc b lc quang hc, iu
bin nh sng v sng v tuyn ngn. Giecmani c hiu ng quang in c trong
trng hp hp th cc in t trung bnh v nhanh cng nh khi hm cc ht
nguyn t khi lng ln. V d, khi hp th ht s c xung dng in ko di
gm 0,5s, tng ng vi 106 in t. V vy giecmani c th dng sn xut cc
b m ht nhn.
Khong nhit lm vic ca cc dng c giecmani t -60oC n +70 oC, khi nhit
tng gn gii hn trn th dng in thun chiu trong diode tng ln 2 ln, cn
dng in ngc chiu th tng 3 ln. Khi lm lnh n -50oC -60 oC dng in
thun chiu gim 70% -75%. Dng c gicmani cn c bo v chng m ca
khng kh.
2.2.3 Silicon
Silic cha 29,5% trong khi lng v tri t, c tm thy di dng SiO2 trong
cc m (dng Silict).
Silic thng c iu ch bng cch kh ttraclorua silic bng hi km nhit

1000 oC trong mi trng kn. Qu trnh gia cng tip theo ca silic ging nh
giecmani, nhng gp nhiu kh khn v nhit nng chy ca silic cao hn nhiu
so vi giecmani v gn vi nhit ha mm ca thy tinh thch anh.
Tnh cht ha l ca Silic: Silic tinh th c nh thp, tan trong kim loi nng chy,
l hp phn ca nhiu hp kim. V mt ha hc Silic tinh th t hot ng, nhit
phng, Silic ch ha hp vi Flo, Silic ch tc dng vi axt Flohydric v axt
Nitric. N cn tc dng mnh vi kim.
in dn ca silic cng nh giecmani ph thuc rt nhiu vo tp cht cha trong
n.
Silic c dng sn xut dng c bn dn tng t nh giecmani: diode, trit, t
bo quang c lp chn ca hiu ng Hall
Silic trong hp kim vi st c dng di dng cc thp tm lm my bin p (4%
Si) vi mc ch gim tn tht trong li thp. N cn c s dng trong ch to
cc hp kim khc ca st (thp v gang c sc bn i vi nhit , thp cng c,
thp trong xy dng, vt liu chu la)
Tng t, ngi ta cn s dng ch to cc hp kim nh ng thau, ng thanh
vi silic, silic cn c s dng nh cht kh xy trong luyn kim.
Silic tinh th c dng lm cht bn dn dn in sn xut cc loi my tch
sng, c s dng nh in tr trong lnh vc tn s rng, hoc trong nhng my
khuch i.
Bng 2.1 Tnh cht ca Ge v Si
Tnh cht n v o Giecmani Silic
Trng lng nguyn t 72,6 28,06
Th tch nguyn t 13,5 11,7
0
Thng s mng A 5,66 5.42
3
Khi lng ring g/cm 5.3 2.3
0
Nhit nng chy C 936 1414
in tr sut ring .cm 68 200.000
-3 13
Nng ring cc ht dn cm 2.5.10 1010
c bn
B rng vng cm eV 0.72 1.12
2
linh ng in t cm /V.s 3900 1400
2
linh ng l trng cm /V.s 1900 500
H s in mi tng i 16 12.5
2.2.4 Carbide Silic

y l hp cht ca cc nguyn t nhm IV trong bng tun hon Mendeleep l
Silic v cacbon (AIVBIV). Trong thin nhin vt liu bn dn ny rt t gp v c s
lng hn ch.
Cacbit Silic k thut c sn xut trong cc l in khi kh ioxit silic bng
cacbon. Mu sc v in dn ca tinh th Silic ph thuc vo cc tp cht v s
nguyn t tha ca Silic hay Cacbon so vi thnh phn hp thc (tha Silic th
SiC c in dn loi n, cn tha Cacbon c loi p).
Cc nguyn t tp cht nhm V (N, P, As, Sb, Bi) v st trong SiC lm cho n c
mu xanh v in dn loi n, cc tp cht trong nhm II (Ca, Be, Mg) v nhm III
(B, Al, Ga, In) lm cho n c mu da tri v in dn loi p. in dn ca tinh th
SiC nhit bnh thng dao ng trong phm vi rng, in dn ca tinh th SiC
dng bt ph thuc vo in dn ca cc ht nh ban u, kch thc ca cc ht,
mc nn cc ht , in trng v nhit .
Tnh cht ca tinh th SiC
in dn ca SiC khng tun theo nh lut m, nguyn nhn ch yu l khi tng
in p th xy ra qu trnh t gii thot in t t cc mi nhn v cnh sc ca
cc ht bt. Hin tng ny lm cho cc khe h c bt kn li v din tch tit
din in tr tng ln.
Trong k thut in SiC c dng ch to cc tm in tr phi tuyn ca chng
st van bo v ng dy ti in v cc thit b in; sn xut cc varistor in
p thp dng trong cc thit b t ng, k thut my tnh v dng c in trong xy
dng, dng trong cc l in nhit cao, sn xut cc b phn t trong n
inhitron... Varistor lm bng cc ht SiC ri rc khng n nh, d thay i c tnh
nn cc ht SiC cn gn cht bng cht kt dnh: varistor lm bng SiC c cht kt
dnh l t st gi l tirit; varistor lm bng SiC c cht kt dnh l thy tinh lng
gi l vilit.
Thng thng c tnh V-A ca varistor gn ng vi phng trnh:
U=A.I
y A, l cc hng s.
Cc in tr phi tuyn varistor c sn xut vi in p t 3V - 1500V, dng in
lm vic t 0,1mA -1000 mA. Trong k thut hin nay varistor c s dng rng
ri. N c dng n p, lm dp tia la in, nhn tn s, iu chnh s vng
hay i chiu quay ng c, iu khin mch xoay chiu bng in p mt chiu,
gii m xung theo bin , iu chnh nghe r ca thit b in thoi varistor
cng c dng rng ri trong my tnh.
Cacbit silic (SiC) tt hn nhiu so vi silic trong vic mang dng in trong mch
in t. Do vy, n c th gim lng ph nng lng trong mi thit b in t dn
dng hoc vn phng. Cacbit silic l mt trong nhng vt liu tuyt vi nht dnh
cho cc thit b in t cng sut cao.
N cng c th hot ng nhit cao hn so vi silic. iu ny ng ngha vi
vic cm bin lm bng cacbit c th lm vic c nhit cao hn nhiu.
Cc thanh silic c ch to t carbide silic, silic tinh th v cacbon. Chng c in
tr sut cao v chu nhit tt, c dng lm phn t t nng trong l in nhit
cao. Thit b t nng bng thanh silic c th dng trong cc l in vi cng sut
khc nhau, nhit ln nht n 1500oC.
2.2.5 Vt liu bn dn c lin kt dng AIIIBV
Tinh th bn dn c th c to thnh bng nhng nguyn t ca nguyn t ha tr
III v ca nguyn t ha tr V; k hiu l AIIIBV.
Hp cht AIIIBV l loi vt liu c trin vng, bi v n cho php la chn rng ri
cc tham s ca vt liu ban u (b rng vng cm, linh hot ht dn, ) to
ra cc dng c bn dn. Chng c cu trc sfalerit tng t vi cu trc ca kim
cng, ch khc l bn cht v kch thc cc phn t trong cu trc khc nhau.
Phng php ch yu c hp cht AIIIBV l cho cc thnh phn tc dng trc tip
trong chn khng hay trong kh tr.
Vt liu bn dn dng ny thng dng nht l GaAs.

GaAs c cu trc tinh th sfalerit (hay blenzo km)
Ga l nguyn t him, c iu ch t tinh qung km. L kim loi mm mu
trng. Cc electron xp trn 4 lp, v ngoi cng c 3 electron ha tr, bn knh
nguyn t 1,81A0.
As c iu ch t FeAsS. Cc electron sp trn 4 lp, v ngoi cng c 5 in t
ha tr, bn knh nguyn t l 1,33A0
Mt nguyn t Ga trong tinh th GaAs :
4 4
N Ga = 3
= (10 8 ) 3 = 2,2.10 22 cm 3
a (5,65) 3
Mt nguyn t As trong tinh th GaAs:
4 22 3
NAs = = 2,2.10 cm
3
a
Hng s tinh th: a= 5,63 A0
Nng lng vng cm: Wg=1,43(eV)
m2
linh ng: n= 0,85 v p=0,04 ( )
Vs
Mt tinh khit: ni=9.1012(m-3)
- linh ng ca electron ca GaAs ln hn linh ng ca electron ca Silic
vi t l gn 10 ln. Nu in trng bng nhau th electron trong GaAs s di
chuyn nhanh hn, thi gian chuyn mch ngn hn. ng dng lm transistor
lm vic vi tn s cao.
-V nng lng vng cm ln hn so vi Silic, Giecmani nn c th lm vic n
3000C (Silic-2000C, Giecmani-1000C). ng dng lm vi mch cht lng cao.
-Electron chuyn ng t vng dn tr v vng ha tr trong tinh th GaAs c th
pht ra nh sng. Tri li Silic, Giecmani th pht ra nhit. Do , c dng
ch to linh kin hin th in p thp.
GaAs dng ch to laze bn dn, diot quang kch thc nh, cu trc n gin.
nhn c GaAs (ni chung cho VLBD AIII BV ) cn tng hp AIII v BV bng
s nu chy trc tip. Sau l cc bc tng t nh vi Silic: ra sch tinh th-
pha tp cht-trng n tinh th..
Vt liu bn dn AIIIBV c tp cht
-a vo nguyn t ha tr II (v du: Zn) th GaAs tr thnh VLBD loi p
-a vo nguyn t ha tr VI (v du: Selen) th GaAs thnh VLBD loi n
-a vo nguyn t ha tr IV (v du: Silic ) th ty vo v tr ca Silic trong tinh th
GaAs m ta c VLBD loi p hay loi n
+Nu Silic thay th As th GaAs l VLBD loi p
+Nu Silic thay th Ga th GaAs l VLBD loi n
Cng ngh cy ion a chm tia Silic cy vo tinh th GaAs. Sau khi c
8000C, cc nguyn t Silic thay th Ga GaAs thnh loi n.
Tnh dn in ca GaAs khng nhng ph thuc vo ha tr ca tp cht a vo
m cn ph thuc vo v tr nguyn t tp cht trong tinh th Ga.
Cc cht InIII, PV, SbV, AlIII, khi a vo GaAs s to thnh VLBD ghp c tp cht:
GaxIn1-xAs, GaPxAs1-x, Ga1-xAlxAs vi cc phng trnh tnh nng lng vng
cm khc nhau.
V DU: i vi cht Ga1-xAlxAs phng trnh tnh nng lng vng cm l:
Wg=1,43+1,25x.
Cn i vi GapxAs1-x : Wg= 1,424+ 1,15.x+0,176.x2
2.2.6 Dung dch rn trn c s lin kt dng AIIIBV
Nh bit, trong k thut ngi ta thng s dng nhng vt liu c cu trc
dung dch rn; khi hnh thnh dung dch rn th mng tinh th c bo ton nhng
chu k ca mng li thay i. Dung dch rn cho php m rng ng k s la chn
vt liu vi cc thng s vt l xc nh, iu ny lm tng kh nng ng dng ca
vt liu trong nhng dng c bn dn c th. iu c bit nht ca dung dch rn
l l kh nng c th thay i rng vng cm ca n bng cch thay i thnh
phn ca chng, vi s thay i ny th h s in mi, chit sut ca vt liu s
thay i v xy ra hin tng dch chuyn cc mc nng lng tp cht.
V D: dung dch rn GaAs1-yPy, AlxGa1-xAs (vi x v y c 0,3 0,4) c rng
vng cm c 1,7eV c dng ch to cc diot v laser pht nh sng ; cn dung
dch rn GaxIn1-xP (x=0.5 - 0,7) c dng trong ph mu vng xanh l cy.
Dung dch rn cn c ng dng rng ri trong vic to ra cc tip xc gia hai
bn dn c rng vng cm khc nhau v cc dng c bn dn trn c s cc tip
xc ny. Cc cp dung dch rn hay dng l: cp GaAs AlxGa1-xAs v cp GaSb
AlxGa1-xSb.
2.2.7 Vt liu bn dn (VLBD) c lin kt dng AIVBIV
VLBD dng AIVBIV c nghin cu nhiu nht l PbS. N thng c s dng
trong cc b tch sng ging nh cc bn dn c vng cm hp khc; nhng tnh
cht c bn ca cc bn dn loi ny c cho trong bng sau:
Bng 3.2 Tnh cht c bn ca bn dn dng AIVBIV
Bn Hng s Khi lng Nhit B rng linh linh
dn mng ring nng vng ng ng l
0 3
(A ) (mg/m ) chy cm in t trng
0 2
( C) 300 (m /Vs) (m2/Vs)
K(eV)
PbS 5,94 7,61 1114 0,39 0,06 0,07
PbSe 6,12 8,15 1076 0,27 0,12 0,1
PbTe 6,46 8,16 917 0,32 0,18 0,09
C 3 bn dn trn c dng tinh th lp phng ging nh mui n NaCl. Lng

tha nguyn t Pb gy ra tnh dn in t, cn lng tha S gy ra tnh dn l trng.
Dng ca s dn in c th thay i bng cch a thm tp cht vo. Cc nguyn
t nhm I nh Na, Cu, Ag thay th ch v tr thnh acceptor; nu nguyn t thay Pb
l kim loi Bi th Bi s ng vai tr ca donor. Tnh cht ca donor cn th hin khi
tp cht thuc nhm 7.
Chng c nhy cm quang cao, nn thng c dng sn xut photoresist.
nhit thp trong nhng vt liu ny c th xut hin hin tng ti hp, iu ny
cho php s dng chng sn xut laser, ngoi ra, cn c th s dng chng
ch to cc phn t nhit trong cc my pht nhit in bn dn
2.2.8 Vt liu bn dn (VLBD) c lin kt dng AIIBVI
VLBD loi ny bao gm ZnS, CdS, HgS, ZnSe, CdSe, HgSeTnh cht ca chng
c cho trong bng sau:
Bng 2.3 Tnh cht ca bn dn dng AIIBVI

Bn Hng s Khi lng Nhit B rng linh linh ng
dn mng ring nng vng ng in l trng
(A0) (mg/m3) chy cm t (m2/Vs)
(0C) 300 (m2/Vs)
K(eV)
ZnS 3,82 4,10 1780 3,74 0,014 0,0005

CdS 4,13 4,82 1750 2,53 0,034 0,011
HgS 5,84 7,73 1480 1,78 0,07
ZnSe 5,66 5,42 1520 2,73 0,026 0,0015
HgSe 6,08 8,25 790 0,12 2
CdSe 4,3 5,81 1246 1,85 0,072 0,0075
Tp cht c ho tr nh hn II ng vai tp cht nhn (axeptor).

V D: tp cht nhm I nh Ag, Ausau khi thay Zn hay Cd trong mng tinh th
s tr thnh axeptor.
Tnh cht quan trng ca VLBD loi ny l rt nhiu t chng th hin tnh dn
in ch mt dng (n hoc p) khng ph thuc vo c tnh ca hp kim, tp cht
pha vo.
V D: ZnS, ZnSe, CdSe, HgSe lun lun c tnh dn loi n. Ch c ZnTe c tnh
dn l trng, cn CdTe, HgTe c th c tnh dn va n, va p ty thuc iu kin
ngoi v tp cht. Chnh iu ny lm hn ch kh nng ng dng thc t ca h
bn dn ny.
Trong h bn dn ny th ng dng nhiu nht vn l ZnS v CdS. CdS thng
dng lm photoresist; cn ZnS thng dng lm cht pht quang.
Tp cht ng vai tr quan trng i vi quang dn ring ca h bn dn ny:
khi pha tp ng (Cu) nhiu th ng vai tr ch o l quang dn ca tp cht.
Mng mng lm t HgSe, HgTe c linh ng cao thng c s dng ch
to cm bin c nhy cao.
ng dng ca bn dn loi AIIBVI
ng dng ca lin kt AIIBVI theo t l s dng phn chia ra ZnS v CdS. Loi u
tin c s dng trong k thut nh sng, loi th hai trong cng nghip ch to
bin tr quang c nhy rt cao vi vng ph nhn thy. Mng mng lm t lin
kt Se, Te, Hg s dng lm cc b cm bin Hall.
2.2.9 Cc loi khc
Cc sunfua :
Ch sunfua (PbS), Bismut Sunfua (Bi2S3), v Cadmi Sunfua (CdS) c dng
sn xut in tr quang. PbS gp trong thin nhin dng vt liu galenit v c th
iu ch c bng mt s phng php nhn to, n c bin th v nh hnh v
tinh th.
Bismut Sunfua (Bi2S3) c iu ch bng cch nu chy Bi vi S khng c xi.
Tinh th ca n thuc h thng hnh thoi v c mu xm en.
Cadmi sunfua thu c bng cc phng php khc nhau v c th l v nh hnh
v tinh th. Mu ca n ty thuc vo bin th v cc tp cht trong n.
Cc in tr quang c dng m sn phm trong sn xut dy chuyn, kim
tra cao ca cc vt lng v bt ri trong bnh cha, trong cc my sao chp hnh
gia cng cc chi tit theo bn v, bo tn hiu nh sng, bo hiu khi c khi
v kim tra mc t chy nhin liu, dng trong my iu khin theo chng trnh,
trong cc thit b bo v t ng p bng khun lnh v cc my khc.
in tr quang c th mc trc tip vo mng chiu sng in p xoay chiu v mt
chiu, tui th ca chng khng nh hn 10.000 gi.
Cc sunfua cn c dng lm cht pht quang. Km sunfua c kch hot bng
ng cng l mt loi sunfua pht in. B rng vng cm ca ZnS gn 3,6eV, v
th n gn nh in mi.
Cc xit
ng oxit c mu thm ch c th l bn dn loi p. in dn ca ng oxit ph
thuc nhiu vo cc loi tp cht, nhit luyn v nhit .
Nhng dng c bn dn u tin l nhng chnh lu bn dn v t bo quang in
c iu ch t cc tm ng oxi ho vi b mt b ph mt lp xit ng. Khi
ch to chnh lu xit ng th ly mt phin ng bng ng tinh khit em t
vo trong l c mi trng xi ha vi nhit 1020oC -10400C trong khong 5 gi.
Sau a vo l th hai nhit 6000C v gi trong khong 10 gi.
Selen (Se)
Se c nhiu dng: dng v nh hnh, dng tan c, dng tinh th mu , dng
trong sut. Se thu c t cn ca vic tinh ch ng. Nu chiu sng Se trong thi
gian 0,001s th tnh dn ca n tng ln n 15 ln, nn Se c ng dng ch
to t bo quang in. Diot lm t Se dng tch dng in c tn s cao.
2.3 Cng ngh ch to VLBD
Trong phn ny s trnh by mt s phng php ch to VLBD: phng php ko
chy, phng php Czochralski, cng ngh epitaxi, mt s phng php ch to
tip xc p-n : cc khi nim c bn v quang khc, phng php cy ion, v cc
phng php lm sch trong cng ngh in t.
2.3.1 Phng php ko chy
Trong cng nghip Silic c ch to bng cch dng than cc kh xy trong SiO2:
SiO2 + 2C = Si + 2CO
hoc SiHCl + H2 = Si + 3HCl
Silic nhn c cha 2% n 5% tp cht. nhn c Silic vi sch cao ta
phi ra sch n bng phng php ra tinh th (cn gi l phng php ko chy).
Tp cht trong thanh Silic s ha tan trong pha lng (vng nng chy) v cng vi
chng di chuyn v pha ui ca thanh Silic, ct b u ny ta s c thanh Silic
tinh khit.
Hnh 2.30 Phng php ko chy
2.3.2 Phng php Czochralski
nhn c n tinh th Silic ta dng phng php trng n tinh th (cn gi l

phng php Czochralski).
Gi mm Silic trong hn hp nng chy, khi mm bt u tan trn b mt th ko
chm li. Mt ct hn hp lng s c ko theo mm v b gi vi mm bi sc
cng b mt. Gim nhit , hn hp s cng dn to thnh mt khi vi mm Silic
Tp cht c a trc tip vo hn hp to ra VLBD loi p hay n. Mm va
c ko va c quay khong 200 vng/pht tp cht phn b u trong tinh
th. Khi thanh n tinh th pht trin t mm (c ng knh 2mm) t c ng
knh 2cm th gi vn tc ko khng i, khong10-5 m/s ng knh khng tng
na.
Hnh 2.31 Phng php Czochralski
Hinh 2.32 Thi Si mc ln t phng php Czochralski
Hnh 2.33 Mt IC c to ra t phin Si
2.3.3 Cng ngh epitaxi

Epitaxi l lp n tinh th hnh thnh t mt lp vt liu nn n tinh th khc.
Vt liu nn Vt liu nn vi epitaxi
Hnh 2.34 Lp Silic epitaxi trn vt liu nn silic n tinh th.
C hai loi epitaxi trong cng ngh x l Silic:

Loi epitaxi n th: l loi Silic n tinh th trn vt liu nn cng l Silic n
tinh th.
Loi epitaxi lng th: hnh thnh trn mt vt liu nn n tinh th khc (v d
Silic trn Al2O3, Silic trn sapphire).
C 3 phng php cng ngh chnh nhn lp epitaxi: epitaxi trong chn khng;
epitaxi t pha kh; epitaxi t pha lng
Phng php quan trng nht sn xut epitaxi Silic l phng php kt ta kh
ho CVD (Chemical Vapour Deposition): Silan SiH4 (hay diclosilan SiH2Cl2 )c
dan qua be mat a Silic nong (10000 C ).Phan ng ket tua xay ra theo phng
trnh sau : SiH4 = Si + 2H2
Hnh 2.35 L CVD
Ngoi phng php kt ta kh ho CVD cn c 2 phng php khc to lp

Silic n tinh th: phng php epitaxi tia phn t dng Silic lm ngun bc bay v
phng php ti tinh th ho Silic a tinh th dng tc dng nhit ni cc

vng a tinh th thnh mt lp n tinh th. Hai phng php ny hin t c dng.
Hu ht cc vt liu bn dn quang in t c ch to bng cng ngh epitaxi.
Mt mng mng (vi micron) bng vt liu bn dn c to ra trn mt nn (dy
c 200m). Cht lng vt liu nn v cng quan trng trong cng ngh epitaxi.
Vt liu nn phi c mng tinh th ph hp vi mng vt liu chnh, nu khng th
trong mng vt liu chnh s c sai lch mng, di dng sai lch ng hoc
nhng loi sai lch khc. Nhng sai lch mng c tc hi nghim trng n cht
lng ca vt liu. Vt liu nn quan trng l GaAs v InP.
Nhng ng dng quan trng nht ca lp Silic epitaxi trn vt liu nn Silic n
tinh th: Epitaxi vi nng tp cht va (1016 cm-3) trn nn c nng cao (1019
cm-3) loi ny thng c dng cho mch CMOS.
Epitaxi vi nng tp cht va (1016 cm-3) trn nn c nng cao (1019 cm-3) v
lp ngm c nng cao (1020 cm-3): loi ny c dng cho vi mch lng cc
(bipolar), lp epitaxi dy khong t 0,5m n 20 m.
Mt s phng php ch to tip xc p-n
-Khi nim quang khc: quang khc qu trnh to hnh, ra n mn lp phim

khun che (photoresist) to hnh cu trc mong mun trn b mt vt liu. Phim
khun che l lp cm quang, cn khun che (mask) lu tr thng tin v cu trc
cn truyn ln phim, l mt tm thy tinh c ph cht Cr phn quang.
Hnh 2.36 S mt qu trnh quang khc

-Pha tp bng phng php cy ion
a silic n tinh th l c s ca cng ngh vi in t. So vi nhng ngy u ca
cng ngh silic, ng knh ca a ngy cng tng (t 76mm trong nhng nm
1970 n 300mm trong nhng nm gn y). Mi ln tng ng knh ca a silic
u mang li nhiu vn phc tp, khng nhng cho qu trnh sn xut a m cn
cho tng qui trnh cng ngh ch to vi mch. Vn ln nht l trng lng a
cng tng khin my mc dng c x l a cn c hiu chnh cho thch hp.
a silic c ca ra t mt thi n tinh th. B mt a c mt hng tinh th

nht nh (1 0 0) hay (111). Sai lch vi ca hng tinh th l iu kin tt cho
qu trnh hnh thnh epitaxi. nh du hng tinh th chnh ca a, hng sn
xut a thng mi phng mt cnh a, ta gi cnh phng ny l flat. Cnh hnh
ch nht ca vi mch thng chy song song hay vung gc vi flat. Gc gia mt
flat nh v mt flat ln cho bit thng tin v hng tinh th ca a v tnh dn ca
tp cht (do l trng hay in t quyt nh).
Phn ln cc thi silic c ch to bi phng php Czochralski: mt mm tinh
th c nhng vo mt ni cha silic tinh khit nng chy. Tinh th silic nh
hng theo mm ny v mc di thnh mt thi silic n tinh th.
Cng nh phng php khuch tn, phng php cy ion l mt qui trnh cng
ngh quan trng a tp cht vo bn dn nhm to cc vng c dng ht dn
la chn ( loi p hoc loi n). Trc y, cc vng pha tp thng c to bi
nhng phng php khuch tn, nng tp s gim dn t b mt v profile nng
s c xc nh ch yu bi nhit v thi gian khuch tn. Hin nay, rt
nhiu cng on pha tp u s dng phng php cy ion, trong cc ion tp
cht c cy vo bn dn bng mt chm ion c nng lung cao. Profile nng
s c gi tr ln nht khng phi ti b mt m trong khi bn dn, ngoi ra s
phn b profile nng c xc nh ch yu bng khi lng ion v nng lng
ca chm ion.
Thng thng, khuych tn thng c s dng ch to cc chuyn tip p-n su,
cn cy ion thng s dng to cc chuyn tip p-n nng nh ngun v mng ca
MOSFET.
Hnh 2.37 So snh s phn b nng tp cht gia cy ion v khuch tn.
L qu trnh a cc ion c nng lng cao ( keV- MeV) xm nhp vo vng

gn b mt m khng dng nhit .
Cc nguyn t tp c ion ha, gia tc v a n b mt phin, sau cc ion c
nng lng cao i vo mng tinh th, va chm vi nguyn t Si v dng li. Nng
lng cn thit cy tp B, P, As vo Si l 50keV 100 keV, to su khuch

tn 10nm - 1000nm.
u im:
Khng ch chnh xc lng nguyn t tp, cho php nhn nng 1014cm-3
1020cm-3 vi chnh xc cao.
Vic cy ion tp cht c tin hnh trong chn khng v vy khng nh hng ti
s phn b tp ca cc cng on trc.
im cc i ca mt ht dn nm trong vt liu ch khng b mt.
C th cy nhiu loi nguyn t khc nhau.
V d: cy oxy nhn SiO2 su trong silic .
Cy cc lp Silicit (l hp cht gia silic v kim loi)
Thit b cy:
Cc h thng cy ion hin nay c chia lm hai loi: loi cng yu, trung bnh
( cng dng ion khong 1mA) v loi cng mnh (10mA). Khc bit v
thit k gia hai loi h thng ny nm cch dn tia ion n b mt vt liu t
c nng cy u trn ton b mt a: trong khi tia ion cng yu vi
ng knh tia khong 1mm c qut ln mt a th loi cng mnh c
ng knh khong vi cm v a vt liu c chuyn ng vung gc vi tia ion,
tia ion ny qut mt din tch ln hn bn thn a silic nn trnh c qu ti nhit
cho a ang c x l.
Hnh 2.38 S h cy ion
Ngun ion: dng kh AsH3; BF3, PH3 to Plasma p sut P=10-3 mmHg.
Dng in p DC khong 20KV tch ion dng ra khi Plasma.
Nam chm phn tch chn loi ion a vo ng gia tc.
ng gia tc cung cp nng lng cn thit ion c th chui vo lp b mt .
Sau khi chnh hi t, chm tia ion s b lch di tc dng ca bn lch ngang X v
bn lch dc Y
Phin Si t lch khi tm sao cho cc ht trung tnh khng n b mt v c
t trong lng Faraday c th m c s ion.
Tia ion c iu khin n a theo gc nghing khong 70 so vi mt phng
ng trnh hiu ng knh.
sau khi cy ion:

Trong qu trnh cy ion do va chm, nhiu nguyn t b y khi v tr nt mng.
Nu liu lng ln, nhiu sai hng s dn n vt liu tr thnh v nh hnh.
sa li cu trc tinh th v ci tp cht vo su trong tinh th, vt liu cn trong
thi gian nht nh t 5000C 10000C. trnh s khuych tn c th nhanh bng
tia laser hoc bng tia hng ngoi.
ng dng v trin vng:
S dng rng ri trong cc mch ULSI lng cc v MOS.
To cc lp n+ su trong , to vng Base v Emitter trong cng ngh Bipolar v
ch to in tr c gi tr ln. Vi MOS: pha tp knh iu chnh in p ngng,
to cc ging p hoc n cho mch CMOS, to vng S v D ca MOSFET.
D khng ch nng v s phn b tp, c bit khi kch thc linh kin gim.
K thut to lp bng cy su ion xi c gi l phng php ngn bng cy xi
(SIMOX): bn tia xi vo vt liu nn silic n tinh th su khong 0.1m n 1m
v nng xi cao th mt lp xit ngm s hnh thnh bn di mt lp n tinh
th. Ta gi lp ny l lp SOI ( Silicon On Insulator ). Li tinh th do tia ion gy ra
c t ng hiu chnh li ngay sau khi chng xut hin, v nhit vt liu khi tia
ion bn vo b mt rt cao.
Mt ng dng na l phng php trn bng tia ion (IBIM): hai lp vt liu ( v d
molipden trn silic ) c trn vi nhau ti b mt tip xc qua ion cy (v d
nguyn t asen ). Vi cch ny lp silicit mi hnh thnh s l lp tip xc in
gia silic v molipden.
-Phng php lp chuyn tip khuch tn

to ra lp chuyn tip khuch tn p-n, ngi ta dng tp cht th kh, th lng
hoc rn, khuch tn vo cht bn dn. Lp p-n nhn c t kt qu ca s khuch
tn tp cht xuyn qua cc l trn lp bo v mt ca cht bn dn cn c gi l
lp chuyn tip planar. Thng ngi ta s dng SiO2 lm lp bo v (mn chn)
ngn chn khuch tn ca cc tp cht vo Silic. Chng ch khuch tn vo
nhng vng chn trc m lp xit SiO2 b bc i nh k thut quang khc.
Hnh 2.39 Phng php chuyn tip khuch tn.

Vy ta c th iu khin c hnh th ca dng c v su ca s thm nhp tp
cht vo tinh th bn dn bng cng ngh planar. Cng ngh ny dn n s pht
trin mnh m ca cc mch t hp: Trn cng mt phin Silic ta c th ch to
c rt nhiu chip.
Mt cng c c s v ht sc quan trng trong cng nghip sn xut vi mch l b

masks. Khi thay i mask ta c th thay i cc linh kin ca chip v t thay i
tnh nng hot ng ca IC. Tt c cc mch t hp c th lm t mt vi dng
transistor v cc ng dn (u c kch thc c m ). Kch thc nh lm tng
tc lm vic, gim cng sut tiu th in: cc tn hiu c chuyn t logic 0
sang 1 trong mt chip r rng l nhanh hn l chuyn t chip ny sang cc chip
khc. S truyn nhn tn hiu nhanh hn s lm gim cc dng in dung khng c
ch (in dung k sinh), cng sut tiu th thp, dn n gi thnh sn phm gim,
thit b lm vic hiu qu hn.
Mt s yu cu ca mt h khuch tn
-Qu trnh khuch tn khng c lm hng b mt phin bn dn
-Sau qu trnh khuch tn, vt liu cn ng li trn b mt phin, phi c ty
mt cch d dng thun li cho cc cng on sau, v d nh to ng dn, ni
cc tip im.
-H khuch tn phi cho cng mt kt qu i vi tt c cc phin trong cng dy
chuyn cng ngh.
-H khuch tn phi c kh nng khuch tn cng mt lc mt s phin bn dn.
-Nhit khuch tn thng s dng trong khong 6000C n 8000C
+ to vng khuch tn, ta ph hn hp hu c cha cht khuch tn ln b
mt phin Silic, bng phng php quay (vi vn tc 2500 vng/ pht n 5000
vng/ pht) to mt lp dy khong 5000A0. Sau nhit khong 2000C, ri a
mu vo l khuch tn nhit cao hn (8000C n 11000C). Cc tp cht s
khuch tn vo Silic, li trn b mt mt lp SiO2. y l k thut Spin - on
ang c thc hin to chuyn tip p-n ti phng sch ca ITI (SOD: Spin-on-
Dopant; SOG: Spin- on-Glass).
Ngoi ra cn c k thut CVD (Chemical Vapour Deposition).
Hn hp kh B2H6, SiH4; O2; Ar; Ni c a vo bnh thch anh (T= 4250C), to
mt lp lng ng trn b mt Silic loi n. Sau a mu vo l nung nhit
T=6000C, tp cht B s khuch tn vo Silic to nn chuyn tip p-n v li
trn b mt lp SiO2 dy t 1500A0 n 5000A0. to vng ht dn loi n trn
Silic ngi ta s dng kh c cha P nh PH3, cc bc tin hnh hon ton tng
t.
+ nh gi lp khuch tn ta phi tin hnh:
-o chiu su chuyn tip p-n
-o in tr b mt
-o phn b nng tp cht
-o chiu su khuch tn x bng phng php mi bi: Vin bi st c bn knh R,
mi l su hn xJ, nhum mu bng HF4HNO3 (nng nh hn 1%) vng bn dn
loi p phn ng vi dung dch v tr nn sm mu. o cc gi tr ca ng knh
trong v ngoi (d v D) ca vng sm mu, chiu su khuch tn xJ s c xc
2 2
D d
nh bng cng thc : xJ =
8R
-o in tr b mt (in tr vung)
Hnh 2.40 Cch o in tr b mt
Cho dng in chy qua 2 mi ngoi v o st IR gia 2 mi gia. Nu cc lp

rng v dy xJ nh so vi khong cch gia cc mi th in tr b mt ca cc
lp khuch tn l: R0 = 4,53 V/I.
-o phn b tp cht ti chuyn tip p-n
in p t vo chuyn tip lm thay i rng vng ngho, in dung s thay i
3
C A. S
Nx = ; x =
A.q.S C
Trong : A: Din tch mt ct S : Hng s in mi ca bn dn
C: in dung Nx: Nng ti x (mp vng ngho)
-Phng sch v cng ngh lm sch phin bn dn

Cng ngh in t pht trin lun gn lin vi vic tng hiu qu sn xut v cng
ngh bo v mi trng sn xut.
Bng 2.4 Qu trnh pht trin cng ngh sn xut IC

1980 1990 1999 2004
mng (mm) 75 150 200 300
K thut (DRAM) 64K 4M 256M 1G
ln (cm2) 0,3 0,9 3,0 4,5
Kch thc linh kin 2,0 0,8 0,25 0,2-0,1
Cc bc x l 100 300 600 700-800
Kch thc phng sch 1000-100 1 0,1
Vic gim kch thc linh kin i hi mi trng lm vic cht lng cao hn.
Ngy nay IC trn c s MOSFET c di knh dn 0,20m cn phng sch class
0,1 loi b cc tp bn v lp xy t nhin bm trn b mt phin Si. Khi sn
xut cc qu trnh di chuyn phin Si phi c thc hin trong mi trng kh N2
v cng sch. Vn c t ra l lm th no kim sot c mi trng
trong khi ch to linh kin?
Khi nim phng sch c pht trin ti Sandia National Laboratories vo nm

1961. thng 12 nm 1963 chnh ph M a ra tiu chun v phng sch Federal
Standard 209.
Cc thit b s dng trong phng sch
Phng sch thng c xy dng dng hnh hp vi li i gia. Chiu rng l
tng ca li i l 2,4m chiu cao l tng t nn n trn l 3,4m -3,6m. Din tch
phng sch ph thuc vo ng knh phin bn dn. V d s dng phin bn dn
ng knh 200mm sn xut DRAM 16bit vi cng sut thit k ca nh my l
20.000 phin mt thng cn phng sch c din tch 5000m2 v 1000 m2 c sch
thp hn phc v cho phng chnh (ni cc thit b phc v lm sch khc,
phng qun o sch, giy,)
ch to mt IC cn t 14-20 modul cng ngh. Mt modul bao gm 10 20
bc ch to.
Hnh 2.41 Cc qui trnh cng ngh ch to IC
Trong mt modul ca qui trnh cng ngh nh trn, cc mng cch in hoc dn
in c to bi cc phng php khc nhau nh: xi ha; cc phng php lng
ng t th kh, APCVD ( atmospheric pressure CVD ); PECVD ( phasma-
Enhanced CVD), hoc cc k thut bc bay trong chn khng PVD to ra ng
dn kim loi. Cc mch t hp c hnh thnh trn phin bn dn qua cc cng
on s dng h quang khc (photolithography) v cht cm quang (photoresist).
Sau phin c chuyn n cng on hoc n mn (Etching) hoc cy ion
(Ion Implantation). Ti v tr n mn, cc mng in mi hoc dn in s c
ty b nhng phn khng cn thit, trong khi ti ni cy ion, cc ion nguyn t
As, P, B c a vo phin bn dn to ra cc linh kin. Sau khi lp cm quang
c ty khi b mt, phin Si cy ion c chuyn ti l khuych tn
(Diffusion) v loi b cc khuyt tt xut hin trong qu trnh cy ion.
Khng gian b tr cc thit b phc v cho cc qu trnh trn s c phn b

nh sau:
Quang khc 25%
Khuych tn v LPCVD 20%
Thin film 20%
Dry etching 15%
Implatation 10%
Wet process 10%
Nguyn tc b tr cc thit b s dng trong phng sch:
- Gim ti thiu khong cch di chuyn phin gia cc quy trnh cng ngh
bng cch t thit b nh quang khc, n mn, ph, ty b cm quang gn
nhau mt cch lin tc.
- Gim s nhim bn bng cch tch ri u sau ca bung cha phin vi u
trc ca l v khu vc n mn phin.
- Cc thit b phi c b tr d dng cho vic thay th v m rng ci tin.
- Gim ti thiu tn s vn chuyn phin t khu vc ch to ny sang khu vc
ch to khc bng cch b tr cc thit b ca tng modul hp l nh sau:
Khu vc t cc l: l khuch tn, l xy ha, phng x l ha hc, thit b o
mng mng.
Khu vc quang khc: thit b ph photoresist, hin hnh nh, cc l nung s b, h
thng quan st bng quang hc, knh hin vi in t qut ( SEM).
Khu vc n mn: l nhit, h thng n mn, thit b quan st quang hc.
Khu vc loi b resist: t ha, thit b ty b resist.
-Cng ngh lm sch phin bn dn
Khi nim c s
Qu trnh lm sch b mt phin Silic ln u tin c thc hin vo nm 1960 do
W. Kern v D.A puotinen, sau c cng b vo nm 1970. Cc tc gi s
dng 2 dung dch lin tip nhau
1 NH4 OH H2 O (cn gi l Standard clearning 1 SC1) vi cc t l ( 1:1:5) v
(1:2:7) nhit 70 oC - 80oC
2 HCL H2O2-H2O (SC2) vi t l : (1:1:6) v t l (1:2:8) nhit 70 oC -
80oC
C hai u da trn c s pH. SC1 c nng pH cao c th ty sch cc cht
bn hu c v cc tp cht bng phn ng oxy ha. SC2 c nng pH thp ty
sch cc kim loi bm trn b mt bng cch to cc hp cht tan trong nc.
V c bn, nguyn tc lm sch mu t c s thay i, tuy nhin do kch thc linh
kin ngy cng gim nh, trong cng ngh ULSI v VLSI i hi phin bn dn c
b mt siu sch do yu cu v cng ngh lm sch b mt cng tng ln rt
nhiu. Cc yu cu v cng ngh ny phi m bo lm sch b mt phin khi cc
ht bi, cht hu c, kim loi...
S lng cc ht cht hu c hoc kim loi bm trn b mt c th lm gim bi
cng ngh phng sch v ci tin cng ngh lm sch mu bng phng php ut.
tng sch ca lp xit cc ca siu mng v cc mng epitaxi c to
nhit thp, th trn b mt phin bn dn phi c ty sch lp xt t nhin,
c bit l ph v cc lin kt hydro. Mt trong nhng yu t cn phi loi b l

nhm b mt c kch c micromet. Yu t ny t b nh hng khi dy lp xt
cc ca ln hn 200Ao v cng ngh 0,7m; tuy nhin khi dy lp xt cc ca
nh hn 100Ao i vi cng ngh 0,35m v nh hn th nhm ca b mt tip
xc SiO2 / Si nh hng rt ln n linh ng ca in t trong knh dn v cht
lng lp xt cc ca trong cc MOSFET. sch lp xt cc ca ng vai tr
ht sc quan trng v n xc nh hiu sut, kh nng lm vic v s hnh thnh vi
mch. Cc yu t gy nn nhm b mt, bi bn c th l kt qu ca qu trnh cng
ngh, phn ng ha hc, nc ra, dng c th nghim, cc phng php loi b kh
tham gia phn ng, nh hng nhit v bn thn phin Si ban u.
Do cc cht ha hc, nc kh ion v phin Si c th thu c vi sch rt cao
nn ngun gy bn c th l cc dng c v qa trnh thc hin cng ngh hn l
mi trng v ngi thc hin. Mc d c rt nhiu qui trnh lm sch mu c
nghin cu v pht trin nhng iu quan trng ch yu l loi b kh nng gy bn
hn l lm sch bng phng php khc nhau.
C ch ty sch bn v s nhim bn
Cc ht bn xut hin trn b mt phin Si trong qu trnh cng ngh t dng c,
mi trng xung quanh, kh, ha cht
Cc ht bn c trong cc loi ha cht nh sau (s ht/ml)
Bng 2.5 S lng ht bn c trong mt s loi ha cht
0,2m 0,5 m
NH4OH 130-240 15-30
H2OH2 20-100 5-20
HF 0-1 5-20
HCL 2-7 1-2
H2SO4 180-1150 10-80
Kch thc ht gim khi kch thc nh nht c trng cho cng ngh gim, thng
thng kch thc ht phi nh hn 10 ln kch thc nh nht c trng cho cng
ngh.
V du: cng ngh 0,2m CMOS yu cu ht c kch thc 0,02 m
Cc ht bn bm vo b mt phin bn Si theo mt s c ch sau:
- Lc lin kt tnh in, lc Van Der Waals
- Lc lin kt ha hc, lc to bi cc in tch kp.
Nh vy c ch lm sch c th phn loi nh sau:
- S ha tan
- Phn hy bng phn ng oxy ha ha tan
- Ty bng n mn cc cht bn ra khi b mt phin
- y cc ht bn ra khi b mt bng dng in
SC1 bao gm c cc c ch trn: H2O2 xy ha b mt Si v ion OH- t NH4OH to

nn cc ion tch in m trn b mt.
nng cao hiu sut lm sch, ta phi kt hp gia SC1 SC2 vi mt s
phng php khc .
V d: SC1 kt hp vi megasomic ( nhit nh hn 40 oC ), nng lng m

thanh c pht song song vi b mt phin t trong dung dch SC1, m thanh
c pht ra bi ngun c cng sut 200W tn s 850Khz - 900Khz.
Lm sch cht bn kim loi
Nu mc bn ca cc ht kim loi ln hn 1010 nguyn t trn mt cm2, dn n
cc sai hng cu trc lm nh hng n qu trnh xy ha v epitaxy tip theo, kt
qu l lm tng dng r ca chuyn tip p-n, gim thi gian sng ca ht dn c bn.
Hai c ch lin kt chnh ca kim loi vi b mt Si
-C s trao i in tch gia ion kim loi dn n ph hy Si. S lin kt ny rt
kh ty bng phng php lm sch t. Cc loi ion kim loi ny thng l Au,
tnh m in ca chng cao hn Si nn chng trung ha in bng cch ly in t
t Si v kt ta trn b mt ca Si.
-Cc kim loi nh Al, Cr, Fe lun c xu hng b xy ha khi b mt Si b xy ha
v chng tn ti trong lp xt cc kim loi ny c th loi b bng dung dch HF.
-S dng phng php ty ra t em li hiu qu cao nht loi b cht bn
kim loi.
-C SC1 v SC2 u c kh nng loi b tp bn kim loi trn b mt phin Si do
H2O2 c kh nng xy ha cao.
Lm sch tp bn hu c
Cc cht hu c xut hin trn mt Si t cc kh hu c c trong khng kh, cc
cotainers cha trong photoresist. S c mt cc hp cht hu c trn b mt gy tr
ngi cc qu trnh lm sch lp xt t nhin v to bn kim loi, ng thi to nn
cc hiu ng ph nh hng ti cc qu trnh cng ngh tip theo. Cc cht cm
quang l ngun gy bn hu c ch yu trong qu trnh sn xut IC.
C th dng H2SO4 : H2O2 (3:1 hoc 4:1) ty cc cht bn hu c. Thng thng
cc tp bn hu c c ty sch bng phng php kh ngay t u, sau lm
sch hon ton bng phng php t.
Lm sch ht nhm siu nh trn b mt
Trn b mt phin bn dn lun c cc vt nhm c kch thc siu nh v nh
hng rt ln n cht lng sn phm:
Nguyn nhn: lp in mi hnh thnh sau qa trnh xy ha nhit rt mng khong
100Amstrong cho cng ngh 0,35m (PC486). Ngy nay cng ngh 0,18 m yu
cu lp xt SiO2 xp x 40Amstrong. B mt phin phi c lm phng mc
nguyn t .
-Dung dch NH4OH H2O2-H2O c s dng bc cng ngh u tin ty
cc ht bn, cc cht hu c v mt s kim loi bm trn b mt.
-Mt qui c chun c cng b s dng NH4OH H2O2-H2O theo t l 1:1:5
70oC trong 10 -15 pht to nn b mt Si th.
C ch xy ra trn b mt th nh sau:
-NH4OH tc dng nh cht ty lp xt trong khi H2O l cht xy ha. Tuy nhin,
qu trnh xy ha sau lp xit b n mn xy ra ng thi v lin tc trong
dung dch SC1, nh vy b mt Si tr nn th (nhm).
gim hiu ng trn:
-Gim nng NH4OH
-Gim nhit dung dch
-Gim thi gian ra phin
S dng knh hin vi qut hiu ng xuyn hm (STM) kim tra b Si, nhn thy
lp xt t nhin trn b mt Si c nh hng ln n phn gii: knh hin vi lc
nguyn t (AFM) cng thng c s dng xc nh nhm ca b mt sau
khi x l phin.
Lm sch lp xt t nhin
Trn b mt phin Si lun tn ti lp xt SiO2 t nhin, siu mng khng kim sot
c dy, lp xt ny c hnh thnh trong qu trnh cng ngh. Nhng nh
hng ca lp xit t nhin:
-Lm tng in tr tip xc
-Ngn cn qu trnh epitaxi
-Cc tp kim loi c th tn ti trong lp xit t nhin trong qu trnh ra mu.
-Lp xit t nhin ny khng th ty c
-y l ngun khuch tn kim loi vo bn dn hoc vo trong lp bin SiO2/Si,
to nn cc khuyt tt trong cc qu trnh cng ngh nhit cao. Lp xit t
nhin thng c xc nh bng phng php phn tch ph ca tia X ca cc in
t v Ellipsometry. Rt kh ng thi xc nh dy lp xt v chit sut khi
dy ny nh hn Amstrong. dy lp xt t nhin tng khi thi gian ra mu
trong nc kh ion tng.
Ta thy nguyn t xy trc ht ph v lin kt Si Si. trn b mt vn cn nguyn
t H. i vi b mt trong DI s b ph hy bi cc ion O2- hoc OH-, lin kt Si
H ch tn ti lp bin SiO2 /Si.
Mt phng php lm gim hiu ng trn l s dng mng loi kh bc th nht.
xy trong nc s nhanh chng khuch tn qua mng loi kh. Sau nng O2
gim xung. C th lm gim xy bng phn ng c s tham gia ca cht xc tc
Rb.
O2 + NH4 = 2H2O + N2
O2 +2 H2 = 2 H2O
Phng php khc l s dng N2 lm si bt lm gim p sut ca xy trong nc.
Bc cui cng ca qu trnh ra phin trc khi xy ha hoc epitaxi
Ngy nay, cng ngh epitaxi tr nn rt quan trng trong vic ch to linh kin c
tc ln nh High electron mobility transistor hoc linh kin trn c s SiGe.
Trc khi to lp xy cc ca, c n 74% c s sn xut s dng HF nh cng
on cui cng. L do: HF ty c cc tp kim loi cn st li v lp xit t nhin,
to b mt cht lng cao. S dng HF 0,5% 70 oC c th ty sch SiO2 i khi b
mt Si.
Mt s dung dch khc thng c dng ra phin trc khi xy ha hoc
epitaxi:
HF/IPA (iso propyl Alcolhol <1000pm)
HF (0,5%)/ H2O2 (10%) : H2O c th dng ty tp kim loi vi nng
1010 at/cm2 trong khong 10 pht.
Cng ngh ra t (Wet Cleaning)

Dng dung dch H2SO4 : H2O2 vi t l (2:1) hoc (3:1) hoc HNO3
(100%). Thi gian 10 pht ty bi bn, vt du m.
S dng HNO3 (69%) trong thi gian 10 pht nhit T = 110 oC
ty tp hu c, kim loi,
S dng HF (1%) ty lp xt t nhin v tp kim loi.

Sau mi ln u ra qua nc siu sch, quay kh.
Cng ngh ra kh (Dry cleaning)
Cng ngh ra t vn l phng php c dng ch yu, tuy nhin vi cc mch
ULSI ngi ta nhn thy cc vn hn ch lin quan ti cng ngh ra t l:
- Sinh ra cc ht mi t chnh cc dung dch.
- Kh lm kh
- Gi thnh cao
- nhim mi trng
- Khng d thay i qui trnh cng ngh
khc phc nhng hn ch ny ngi ta s dng cng ngh ra kh. Qu trnh
ra kh l dng s dng cc cht ha hc dng kh. Thng thng cn phi to
nng lng kch hot tng cng phn ng ha hc nhit thp. Dng nng
lng b sung ny c th l Plasma, cc chm ht, bc x sng ngn hoc kh c
nung nng. Cc dng kh ny c dng lm sch b mt phin nhng khng
c to nn cc sai hng trong Si hoc lm hng phin.
Thanh Silic keo c bang phng phap Czochralski tren thc te

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Bai Giang Vat Lieu Ky Thuat Dien Chuong 2 Vat Lieu Ban Dan 04

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Khi c qua ti liu ny, nu pht hin sai st hoc ni dung km cht lng

xin hy thng bo chng ti sa cha hoc thay th bng mt ti liu

Bn c th tham kho ngun ti liu c dch t ting Anh ti y:

Thng tin lin h:

Yahoo mail: thanhlam1910_2006@yahoo.com

CHNG 2: VT LIU BN DN (VLBD)

Vng nng lng

Vng nng lng

Hnh 2.2 Cu trc vng nng lng trong VLBD.

tng t nh nh vng ho tr l ng vi th nng ca l trng. Nu electron mc

Hnh 2.3 y vng dn tng ng vi th nng ca electron

Nguyn t Thuc nhm (bng tun hon Menlev)

Hnh 2.4 S tri phng mt chiu ca mng tinh th Silic

b/ Cu trc tinh th ca Si, Ge,

Hnh 2.6 Cu trc tinh th Sfalerit ca GaAs

V d: Tnh mt ht mang in ca VLBD tinh khit l Silic, Germani, GaAs khi

i vi Silic: A = 5,53. 1066(0,98 m.0,49)3/4 = 5,53.1066.m3/2(0,98. 0,49)3/2

Hnh 2.7 Tp cht Sb trong tinh th Si

Hnh 2.8 Mc nng lng cho Wd st ngay mc Wc

nhit phng: niGermani =1019 (m-3) nn in dn sut :

Hnh 2.9 Mc nng lng nhn Wa nm st mc Wv

V d: Tnh mt tp cht trong 1 thanh Germani loi p c chiu di 6 mm, b

WFn Germani-n WFp Germani-p

Hnh 2.11 S khuych tn ca ht t do

H s khuch tn D ni ln kh nng ca ht mang in chuyn ng qua tinh th,

Phng trnh ny cho php ta xc nh nng ht dn, su khuch tn, thi

Hnh 2.12 S ph thuc vo nhit ca n i , p i trong Si ,Ge, GaAs

Tip tc tng nhit , nng cc electron t do gn nh khng tng na (on 2-

Hnh 2.13 S ph thuc vo nhit ca mt electron trong bn dn

l bc x kch thch. c im ca qu trnh bc x kch thch l photon c pht

Hnh 2.14 Qu trnh electron ri vo by v ti hp (khng c bc x) vi l

tin, c th ng dng vo mng

GaAs1-xPx *Vt liu ny tr thnh vt liu gin

Vt liu bn dn trc tip c hiu sut bc x ln, cn vt liu bn dn gin tip th

Hnh 2.16 S cu to ca LED

Hnh 2.17 S ti hp c bc x trong LED bng GaAs

Wg thng c tnh vi eV, do vy:

Hnh 2.18 S cu to it quang

Hnh 2.19 L trng b in trng y v pha p, v electron b y v pha n

quang in chy qua mt in tr, tn hiu in p c ly t in tr, nh l tn

Hnh 2.20 Cu to ca mt pin mt tri (Front metal contacts: lp tip xc trn

Hnh 2.22 a/ im cng tc Q b/ Cng sut ln nht

a) Hy tnh in p khng ti v dng in ngn mch ca pin.

Hnh 2.23 S cu trc ca si quang dn

Hnh 2.25: Cng ngh CVD sn xut phi ca si quang dn

khuch tn sang u lnh l ni in t t do t hn, do u nng tch in

Hnh 2.27 Hiu ng Hall

Gia hng s Hall v linh ng c quan h

2.1.8. in dn ca cht bn dn t trong in trng c cng cao

Hnh 2.28 Chuyn ng ca in t c th biu din bng ng nm ngang

bc t do c th so snh vi vn tc ca chuyn ng nhit, iu ny dn ti s

Hnh 2.29 Phn loi vt liu bn dn.

Silic thng c iu ch bng cch kh ttraclorua silic bng hi km nhit

2.2.4 Carbide Silic

Vt liu bn dn dng ny thng dng nht l GaAs.

C 3 bn dn trn c dng tinh th lp phng ging nh mui n NaCl. Lng

Bng 2.3 Tnh cht ca bn dn dng AIIBVI

ZnS 3,82 4,10 1780 3,74 0,014 0,0005

Tp cht c ho tr nh hn II ng vai tp cht nhn (axeptor).