MJE210

SILICON PNP TRANSISTOR

STMicroelectronics PREFERRED
SALESTYPE
PNP TRANSISTOR

DESCRIPTION
The MJE210 is a silicon Epitaxial-Base PNP
( s )
transistor in Jedec SOT-32 plastic package,
c t
designed for low voltage, low power, high gain
audio amplifier applications.
d u
r o s ) 3
2
1

e P c t (
l e t d u SOT-32

s o r o
O b e P
- l e t
( s ) o INTERNAL SCHEMATIC DIAGRAM

c t b s
d u - O
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
ABSOLUTE MAXIMUM RATINGS

s o
Symbol Parameter Value Unit

O b V CBO
V CEO
V EBO
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (I B = 0)
Base-Emitter Voltage (I C = 0)
-40
-25
-8
V
V
V
IC Collector Current -5 A
I CM Collector Peak Current (t p < 5 ms) -10 A
IB Base Current -1 A
Total Power Dissipation at T case 25 o C 15
P tot o W
at T amb 25 C 1.5
o
T stg Storage Temperature -65 to 150 C
o
Tj Max Operating Junction Temperature 150 C

September 2003 1/4

 MJE210

THERMAL DATA
o
R thj-amb Thermal Resistance Junction-ambient Max 83.4 C/W
o
R thj-case Thermal Resistance Junction-case Max 8.34 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Collector Cut-off V CB = -40 V -100 nA
I CBO
Current (I E = 0) V CB = -40 V T case = 125 o C -100 A
Emitter Cut-off Current V EB = -8 V
I EBO -100 nA
(I C = 0)
Collector-Emitter
V CEO(sus) Sustaining Voltage
I C = -10 mA

( s ) -25 V
(I B = 0)
c t
V CE(sat)
Collector-Emitter
Sustaining Voltage
I C = -0.5 A
I C = -2 A
d u I B = -50 mA
I B = -0.2 A
-0.3
-0.75
V
V

r
I C = -5 A
o s ) I B = -1 A -1.8 V

V BE(sat)
Base-Emitter on
Voltage
e P
I C = -5 A

c t ( I B = -1 A
-2.5
V

V BE
Base-Emitter on
Voltage
l e t
I C =- 2 A

d u V CE = -1 V -1.6 V

DC Current Gain
s o r o
I C = -0.5 A V CE = -1 V 70
h FE

O b e P
I C = -2 A
I C = -5 A
V CE = -1 V
V CE = -2 V
45
10
180

-
Transistor Frequency
l e t
I C = 0.1 A V CE = 10 V
fT

( s ) o
f = 10 MHz
65 MHz

C CBO

c t
Collector-base
Capacitance
b s V CB = -10 V IE = 0 f = 0.1 MHz 120 pF

u O
Pulsed: Pulse duration = 300s, duty cycle 1.5%

d -
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
s o
O b

2/4
 MJE210

SOT-32 (TO-126) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425

)
b 0.7 0.9 0.028 0.035
b1
C
0.40
2.4
0.65
2.7
0.015
0.094
t ( s 0.025
0.106
c1 1.0 1.3 0.039
u c 0.051
D 15.4 16.0 0.606

o d )
0.630
e 2.2

P r 0.087

( s
e3
F
4.4
3.8
t e
0.173

c
0.150 t
G 3 3.2
l e0.118
d u 0.126
H 2.54

s o r o 0.100
H2
I
2.15
1.27
O b e P 0.084
0.05
O 0.3
- l e t 0.011
V

(
10o

s ) o
10o

c t b s
d u - O
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
s o 1: Base

O b 2: Collector
3: Emitter

0016114/B

3/4
 MJE210

( s )
c t
d u
r o s )
e P c t (
l e t d u
s o r o
O b e P
- l e t
( s ) o
c t b s
d u - O
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
s o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are

O b subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.

2003 STMicroelectronics All Rights reserved

STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

http://www.st.com

4/4